• Korean Chemical Engineering Research
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• 제48권4호
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• pp.511-514
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• 2010

불소계 고분자 물질인 $Cytop^{TM}$ 박막을 간단하고 경제적인 스핀코팅 방법을 이용하여 반도체 표면에 선택적으로 형성시킨 후, AlGaN/GaN HEMT 소자의 반도체 보호막(passivation layer)으로써 활용가능성을 고찰하기 위하여 전기적 특성이 분석되었다. $Cytop^{TM}$ 보호막이 적용된 AlGaN/GaN HEMT 소자와 적용되지 않은 소자의 게이트 래그 특성이 비교되었다. 보호막이 적용된 소자는 dc 대비 65%의 향상된 펄스 드레인 전류를 보였다. HEMT 소자의 rf 특성이 측정되었으며, $Cytop^{TM}$ 박막이 적용된 소자는 PECVE $Si_3N_4$ 보호막이 적용된 소자와 유사한 소자 특성을 나타냈다. 이는 게이트와 드레인 사이에 존재하는 표면상태 트랩의 보호막에 의한 감소에 의한 것으로 판단된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.297-298
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• 2005

We have fabricated twisted nematic (TN) liquid crystal cells doped by carbon nanotubes (CNTs) with different CNT wt. %. With a minute amount doping, multi-walled CNTs did not perturb the liquid crystal orientations at the off- and on-state. The hysteresis studies of voltage-dependent capacitance (V-C) under the influence of electric field generated by ac and dc voltage show that the residual do, which is tightly related to image sticking problem in liquid crystal displays, is greatly reduced due to ion trapping by CNTs. Also, the V-C hysteresis shows dependency of capacitance on concentration of multi-walled CNTs.

• 한국전기전자재료학회논문지
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• 제25권6호
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• pp.409-413
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• 2012

In this study, a substrate-bias assisted 2-step pulse programming method is proposed for realizing 4-bit/1-cell operation of the SONOS memory. The programming voltage and time are considerably reduced by this programming method than a gate-bias assisted 2-step pulse programming method and CHEI method. It is confirmed that the difference of 4-states in the threshold voltage is maintained to more than 0.5 V at least for 10-year for the multi-level characteristics.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.415-418
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• 2005

To understand effects of carbon nanotubes (CNTs) dispersed in nematic liquid crystal (NLC) on electro-optic characteristic and orientation of the LC, we CNT-doped homogeneously-aligned NLC cells driven by in-plane field have been fabricated. The CNTs were aligned with a LC director from the initial state to below critical ac field, whereas the CNTs disturbed the LC director field above critical ac field. We observed motional textures in the form of vertical stripes in the local area between electrodes, which were associated with a deformation of the LC director orientation. This indicates that CNTs start vibrating three dimensionally with translational motion. Further, the hysterisis studies of voltage-dependent transmittance under dc electric field show that the amount of residual dc, which is related to image sticking problem in liquid crystal displays, is greatly reduced due to ion trapping by CNTS while keeping operating voltage and response time about the same compared to the un-doped LC cell.

• Transactions on Electrical and Electronic Materials
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• 제16권4호
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• pp.183-186
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• 2015

This research investigates the impact of charge spreading on the data retention of three-dimensional (3D) silicon-oxide-nitride-oxide-silicon (SONOS) flash memory where the charge trapping layer is shared along the cell string. In order to do so, this study conducts an electrical analysis of the planar SONOS test pattern where the silicon nitride charge storage layer is not isolated but extends beyond the gate electrode. Experimental results from the test pattern show larger retention loss in the devices with extended storage layers compared to isolated devices. This retention degradation is thought to be the result of an additional charge spreading through the extended silicon nitride layer along the width of the memory cell, which should be improved for the successful 3-D application of SONOS flash devices.

• 오토저널
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• 제15권1호
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• pp.55-66
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• 1993

The characteristics of the flow processes in the cylinder of the two-stroke cycle engines have become the subject of increasing and attention owing to the simplicity and the higher power per unit weight of the two-stroke cycle engine. Among the many factors which influence on the scavenging flow, the port angle is important factor. Hence, four different type models with one inlet-port and two side-ports are studied to show the effect of port angle on the laminar scavenging flow. When the inlet-port axial is relatively larger than the side-port axial angle, it is showed that the fresh charge penetrate into the burned gas and displace it first toward the cylinder head and then toward the exhaust port. When the inlet-port axial angle is much less than the side-port axial angle, the fresh charge through the inlet-port directly move toward the exhaust port. The result showed that the model A may suppress the generation of vortices in the vicinity of inlet and side prots which restrict the sufficient supply of fresh charge and obstruct the perfect displacement of all combustion products.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.37-40
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• 1999

For the first time, charge trapping nonvolatile semiconductor memories with the deoxidized oxynitride gate dielectric is proposed and demonstrated. Gate dielectric wit thickness of less than 1 nm have been grown by postnitridation of pregrown thermal silicon oxides in NO ambient and then reoxidation. The nitrogen distribution and chemical state due to NO anneal/reoxidation were investigated by M-SIMS, TOF-SIMS, AES depth profiles. When the NO anneal oxynitride film was reoxidized on the nitride film, the nitrogen at initial oxide interface not only moved toward initial oxide interface, but also diffused through the newly formed tunnel oxide by exchange for oxygen. The results of reoxidized oxynitride(ONO) film analysis exhibits that it is made up of SiO$_2$(blocking oxide)/N-rich SiON interface/Si-rich SiON(nitrogen diffused tunnel oxide)/Si substrate. In addition, the SiON and the S1$_2$NO Phase is distributed mainly near the tunnel oxide, and SiN phase is distributed mainly at tunnel oxide/Si substrate interface.

• 한국표면공학회지
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• 제50권5호
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• pp.315-321
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• 2017

Antireflective pyramid arrays can be readily obtained via anisotropic etching in alkaline solution (KOH, NaOH), which is widely used in crystalline-Si (c-Si) solar cells. The periodic inverted pyramid arrays show even lower light reflectivity because of their superior light-trapping characteristics. Since this inverted pyramidal structures are mostly achieved using very complex techniques such as photolithograpy and laser processes requiring extra costs, here, we demonstrate the Cu-nanoparticle assisted chemical etching processes to make the inverted pyramidal arrays without the need of photolithography. We have mainly controlled the concentration of $Cu(NO_3)_2$, HF, $H_2O_2$ and temperature as well as time factors that affecting the reaction. Optimal inverted pyramid structure was obtained through reaction parameters control. The reflectance of inverted pyramid arrays showed < 10% over 400 to 1100 nm wavelength range while showing 15~20% in random pyramid arrays.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.120-121
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• 2007

Nano-floating gate memory (NFGM) devices were fabricated by using the low temperature poly-Si thin films crystallized by ELA and the $In_2O_3$ nano-particles embedded in polyimide layers as charge storage. Memory effect due to the charging effects of $In_2O_3$ nano-particles in polyimide layer was observed from the TFT NFGM. The post-annealing in 3% diluted hydrogen $(H_2/N_2)$ ambient improved the retention characteristics of $In_2O_3$ nano-particles embedded poly-Si TFT NFGM by reducing the interfacial states as well as grain boundary trapping states.

• Nuclear Engineering and Technology
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• 제53권5호
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• pp.1717-1722
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• 2021

This study is devoted to the ability of carbon fiber material samples impregnated with various amounts of barium iodide and triethylenediamine to remove radioactive methyliodide from air streams. The main sorption characteristics of impregnated UVIS® carbon fiber were determined and the use of this material for purifying of technological gas flows at nuclear power plants was evaluated. The methyliodide trapping efficiency by samples impregnated with barium iodide, TEDA, and their mixture was 83.4 ± 0.8%; 93.1 ± 0.6% and 93.5 ± 0.7% respectively, under the same conditions. The study established a significantly higher capacity (8.3 ± 0.07 mg/cm²) of samples impregnated simultaneously with both chemical compounds toward methyliodide. Under the same test conditions, the values of this parameter for the samples impregnated separately with TEDA and BaI₂ were 2.85 ± 0.05 mg/cm² and 0.86 ± 0.04 mg/cm², respectively.