• Applied Microscopy
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• v.50
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• pp.28.1-28.6
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• 2020

Contamination on two-dimensional (2D) crystal surfaces poses serious limitations on fundamental studies and applications of 2D crystals. Surface residues induce uncontrolled doping and charge carrier scattering in 2D crystals, and trapped residues in mechanically assembled 2D vertical heterostructures often hinder coupling between stacked layers. Developing a process that can reduce the surface residues on 2D crystals is important. In this study, we explored the use of atomic force microscopy (AFM) to remove surface residues from 2D crystals. Using various transmission electron microscopy (TEM) investigations, we confirmed that surface residues on graphene samples can be effectively removed via contact-mode AFM scanning. The mechanical cleaning process dramatically increases the residue-free areas, where high-resolution imaging of graphene layers can be obtained. We believe that our mechanical cleaning process can be utilized to prepare high-quality 2D crystal samples with minimum surface residues.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.1 no.2
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• pp.74-81
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• 1987

The reduction in dielectric strength of insulating polymer material when applying electric field is known to be substantial due to the trapped carrier effect. In this study, the carrier property of Biaxially-Drawn polypropylene, which has superior heat-resistance compared to ordinary one, is examined to improve electrical characteristics by measuring TSC spectra as a function of electric field applied to a sample of ($50{\mu}m$) thickness film. The TSC spectra in the temperature range of 303-413(K) and electric field of 2-80(MV/m) have shown no observable effect below 12(MV 1m) but TSC currents of Hetero-and Homo-peaks formed from trapped space charger and space charger injected from electrode have been observed above that point, which seems eventually lead to dielectric breakdown. Finally, this study has shown the superior dielectric proporty of Biaxially-Drawn polypropylene film compared to the non-oriented one for electrical insulation.

• Korean Journal of Materials Research
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• v.27 no.11
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• pp.590-596
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• 2017

We demonstrated a CNT synaptic transistor by integrating 6,6-phenyl-C61 butyric acid methyl ester(PCBM) molecules as charge storage molecules in a polyimide(PI) dielectric layer with carbon nanotubes(CNTs) for the transistor channel. Specifically, we fabricated and compared three different kinds of CNT-based synaptic transistors: a control device with $Al_2O_3/PI$, a single PCBM device with $Al_2O_3/PI:PCBM$(0.1 wt%), and a double PCBM device with $Al_2O_3/PI:PCBM$(0.1 wt%)/PI:PCBM(0.05 wt%). Statistically, essential device parameters such as Off and On currents, On/Off ratio, device yield, and long-term retention stability for the three kinds of transistor devices were extracted and compared. Notably, the double PCBM device exhibited the most excellent memory transistor behavior. Pulse response properties with postsynaptic dynamic current were also evaluated. Among all of the testing devices, double PCBM device consumed such low power for stand-by and its peak current ratio was so large that the postsynaptic current was also reliably and repeatedly generated. Postsynaptic hole currents through the CNT channel can be generated by electrons trapped in the PCBM molecules and last for a relatively short time(~ hundreds of msec). Under one certain testing configuration, the electrons trapped in the PCBM can also be preserved in a nonvolatile manner for a long-term period. Its integrated platform with extremely low stand-by power should pave a promising road toward next-generation neuromorphic systems, which would emulate the brain power of 20 W.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1295-1296
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• 2006

수소화된 비정질 실리콘 박막 트랜지스터(a-Si:H TFT)의 이력 현상이 능동형 유기 발광 다이오드(Active-Matrix Organic Light Emitting Diode) 디스플레이 패널을 구동할 경우에, 발생할 수 있는 잔상(Residual Image) 문제를 단위 소자 및 회로에서 실험을 통하여 규명하였다. 게이트 시작 전압을 바꾸어 VGS-ID 특성을 측정할 경우, 게이트 시작 전압이 5V에서 시작한 VGS-ID 곡선이 10V에서 시작한 VGS-ID 곡선에 비해 왼쪽으로 0.15V 이동하였다. 이러한 결과는 게이트 시작 전압의 차이에 의해 발생한 트랩된 전하량(Trapped Charge) 변화로 설명할 수 있다. 또한, 인가하는 게이트 전압 간격을 0.5V에서 0.05V로 감소시켰을 때 전하 디트래핑 비율의 변화(Charge De-trapping Rate)로 인하여, 이력 현상(Hysteresis Phenomenon)으로 인한 단위 소자에서의 문턱전압의 변화가 0.78V에서 0.39V로 감소함을 관찰하였다. 제작된 2-TFT 1-Capacitor의 ANGLED 화소에서 (n-1)번째 프레임에서의 OLED 전류가 (n)번째 프레임에서의 OLED 전류에 35%의 전류오차를 발생시키는 것을 측정 및 분석하였다.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.16 no.1
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• pp.8-12
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• 2002

In this paper, we studied a flat fluorescent lamp with high luminance for LCD backlighting. The lamps have simple structures with ITO glass, insulator layer, phosphor layer, electrode layer and gas gap. The firing voltage was decreased with increasing the frequency. It was considered that this tendency was resulted from the space charge effect due to Xe and Ar positive ions trapped in gas gap. Decrease of uniform voltage at higher drive frequency is due to the remaining space charges which are produced by preceding period. As a result, luminance of 2700[cd/m$^2$] and maximum luminous efficiency of 51[m/W] were obtained with luminance uniformity of 96[%] in operation(700[V$\_$rms/], 80[kHz].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.53-56
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• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays, where they are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/Eu(TTA)$_3$(Phen)/Al(A), glass substrate/ITO/TPD/Eu(TTA)$_3$(p-hen)/Al(B) and glass substrate/ITO/TPD/Eu(TTA)$_3$(phen)/AlQ$_3$/Al(C) structures were fabricated by vacuum evaporation method. where aromatic diamine(TPD) was used as a hole transporting material, Eu(TTA)$_3$(phen) as an emitting material. and tris(8-hydroxyquinoline)Aluminum(AlQ$_3$) as an electron transporting layer. Electroluminescent(EL) and I-V characteristics of Eu(TTA)$_3$(Phen) with a various thickness were investigated. This structure shows the red EL spectrum, which is almost the same as the PL spectrum of Eu(TTA)$_3$(phen). I-V characteristics of this structure show that turn-on voltage was 9V and current density was 0.01A/$\textrm{cm}^2$ at a dc operation voltage of 9V. Electrical transporting phenomena of these structures was explained using the trapped- charge-limited current model with I-V characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.315-318
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• 1998

Organic light-emitting diodes(OLEDs) or electroluminescent devices have attracted much attention because of their possible application as large-area light-emitting displays. Their structure was based on employing a multilayer device structure containing an emitting layer and a carrier transporting layer of suitable organic materials. In this study, several Tb complexes such as Tb(ACAC)$_3$(Phen), Tb(ACAC)$_3$(Phen-Cl) and Tb(TPB)$_3$(Phen) were synthesized and the photoluminescence(PL) and electroluminescence (EL) characteristics of their thin films were investigated by fabricating the devices having a structure of anode/HTL/terbium-oomplex/ETL/cathode, where TPD was used as an hole transporting and Alq$_3$ and TAZ-Si were used as an electron transporting materials. It was found that the photoluminescence(PL) and electroluminescence(EL) characteristics of these terbium complexes were dependent upon the ligands coordinated to terbium metal. Details on the explanation of electrical transport phenomena of the structure with I-V characteristics of the OLEDs using the trapped-charge-limited current(TCLC) model will be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.317-320
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• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays, where they are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/Eu(TTA)$_3$(Phen)/Al(A), glass substrate/ITO/TPD/Eu(TTA)$_3$(phen)/Al(B) aNd glass substrate/ITO/TPD/Eu(TTA)$_3$(Phen)/A1Q$_3$/Al (C) structures were fabricated by vacuum evaporation method, where aromatic diamine(TPD) was used as a hole transporting material, Eu(TTA)$_3$(phen) as an emitting material, and tris(8-hydroxyquinoline) Aluminum (AlQ$_3$) as an electron transporting layer. Etectroluminescent(EL) and I-V characteristics of Eu(TTA)$_3$(phen) with a various thickness were investigated. This structure shows the red EL spectrum, which is almost the same as the PL spectrum of Eu(TTA)$_3$(phen). I-V characteristics of this structure show that turn-on voltage was 9V and current density was 0.01A/㎤ at a dc operation voltage of 9V. Electrical transporting phenomena of these structures was explained using the trapped-charge-limited current model with I-V characteristics.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.37 no.1
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• pp.12-17
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• 2000

In this paper, the frequency characteristics of flat fluorescent lamp(FFL) using ultraviolet generated from gas discharge are studied. The lamp is a simple structure with insulator layer, phosphor layer, and gas gap(1.1mm). The firing voltage and uniform voltage was decreased with increasing the frequency. It was considered that this tendency was resulted from the space charge effect due to Xe and Ar positive ions trapped in gas gap. Luminance in FFL using Xe as discharge gas was shown 2700 cd/$m^2$ in operation (700 Vrms, 80 kHz). Hence, the maximum luminous efficiency was 5 lm/W.

• Electrical & Electronic Materials
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• v.10 no.2
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• pp.97-104
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• 1997

In this paper, in order to investigate the behavior of charged particles on (Sr.Ca)TiO$_{3}$ ceramics with paraelectric properties, the characteristics of electrical conduction and thermally stimulated current was measured respectively. As a result, the conduction mechanism is divided into three regions having different mechanism as the current increased. The region I below 200[V/Cm] shows the ohmic conduction. The region B between 200[V/cm] and 2000[V/cm] can be explained by the Poole-Frenkel emission theory, and the region III above 2000[V/cm] is dominated by the tunneling effect. The three peaks of TSC were obtained at the temperature of -20[.deg. C], 20[.deg. C] and 80[.deg. C], respectively. The origins of these peaks are that the .alpha. peak observed at -20[.deg. C] looks like to be ascribed to the ionization excitation from donor level in the grain, and the .alpha.' peak observed at 20 [.deg. C] appears to show up by hopping conduction of the trapped carrier of border between the oxidation layer and the grain, and the .betha. peak observed at 80[.deg. C] seems to be resulted from hopping conduction of existing carrier in the trap site of the border between the oxidation and second phase.