• Proceedings of the Optical Society of Korea Conference
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• 2005.02a
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• pp.110-111
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• 2005

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.453-456
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• 1999

The Si-SiO$_2$interface trap and nitride bulk trap distribution of SONOSFET(polysilicon-oxide-nitride-oxide-semiconductor)NVSM(nonvolatile semiconductor memory) cell were investigated by single charge pumping method. The used device was fabricated by 0.35 7m standard logic fabrication including the ONO cell process. This ONO dielectric thickness is tunnel oxide 24 $\AA$, nitride 74 $\AA$, blocking oxide 25 $\AA$, respectively. Keeping the pulse base level in accumulation and pulsing the surface into inversion with increasing amplitudes, the charge pumping current flow from the single junction. Using the obtained I$_{cp}$-V$_{h}$ curve, the local V$_{t}$ distribution, doping concentration, lateral interface trap distribution and lateral memory trap distribution were extracted. The maximum N$_{it}$($\chi$) of 1.62$\times$10$^{19}$ /cm$^2$were determined.mined.d.

• Journal of IKEEE
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• v.26 no.1
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• pp.50-55
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• 2022

SiC is a power semiconductor with a wide bandgap, high insulation failure strength, and thermal conductivity, but many deep-level defects. Defects that appear in SiC can be divided into two categories, defects that appear in physical properties and interface traps that appear at interfaces. In this paper, Z_1/2 trap concentration 0 ~ 9×10¹⁴ cm^-3 reported at room temperature (300 K) is applied to SiC substrates and epi layer to investigate turn-on characteristics. As the trap concentration increased, the current density, Shockley-read-Hall (SRH), and Auger recombination decreased, and Ron increased by about 550% from 0.004 to 0.022 mohm.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.42 no.1
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• pp.11-18
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• 2006

The behavior patterns of common octopus, Octopus minor to a cylindric trap were examined in the water tank using a video camera in order to know entering mechanism to the trap and to improve it. Fishing efficiency by 2 kinds of traps(A: 3 entrances, B: 2 entrances) was investigated in the coastal area of Deugryang Bay from May to July, 2005. Common octopus tends to approach by swimming more than walking towards trap. When they approached to the trap, they showed much more behaviors that sate at the around than upper part of it. Approaching behaviors of common octopus was more vigorous at nighttime than daytime on the trap, they showed the most vigorous action between 2 am and 4 am of the day. The rate of staying 30 seconds over around the trap was 41.5% in the nighttime. CPUE(g/trap) of common octopus caught by A type trap was 21.4% higher than the B type trap but there was no difference on the significance level of 5% by the ANOVA. Catch rate of common octopus and by-catch species caught by the A type trap were 97.2%, three and 98.7%, two for B type trap, respectively.

• Korea journal of population studies
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• v.11 no.1
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• pp.32-49
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• 1988

The social conditions in Koreas until 1950s were similar to the model phenomena of low level eqilibrium trap which was named by Prof. Nelson, with the continuation of high population growth rate and low economic growth rate. To escape from the trap, Korean government adopted two different policies, one is economic development plans and the other is family planning programs. Theses policies were successful in both increasing the national products and decreasing the population growth rate. In 1985 per capita GNP increased to over two thousand dollars, fertility rate reduced to replacement level(2.1) and unemployment rate was stabilized at 4 percent level. From various prospects, we were successfully escaped from the Malthusian trap and many economists, who studied developed countries, belive that population growth has positive effects on technological progress, economies of scale, specialization, individual attitude on work, and economic growth. Therefore we need to reexamine the anti-natalistic population policy of Korea in this situation.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.393-395
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• 1987

• Korean Journal of Materials Research
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• v.2 no.1
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• pp.12-18
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• 1992

The trap levels of ZnO-based varistor are obtained by Isothermal Capacitance Transient Spectroscopy method. Here ICTS measuring system consists of YHP 4192A Impedance Analyzer and a personal computer for the data acquisition. Between $-40^{\circ}C$ and $60^{\circ}C$, the grain boundary trap levels of 0.48 and 0.94eV were detected for $ZnO-Bi_2O_3-MnO$ system. The hole omission spectra are observed in the case of the addition of CoO into the $ZnO-Bi_2O_3$ system, while the electron emission spectra are detected in the case of the addition of MnO. The nonlinear resistance coefficient $\alpha$ increases with the decrease of the dormer concentration. Finally, the trap level density of $ZnO-Bi_2O_3-MnO$ system is found to decrease with the amount of CoO, while $\alpha$ is found to increase with the amount of CoO.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.7 no.2
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• pp.59-65
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• 1982

In this paper, the CdS single crystal, which was grown as piper-polish method, was Ion-bombarded with Sb and In, and the thermally stimulated current of the spot that was Ionbombarded was measured. In the sample which was individually bombarded by Sb and In, the over-lapping peak was found, this over lapping peak was separated, by the method of thermal cleaning, showing the trap levels of 0.25(eV) and 0.31(eV) at the temperature of 147(K) and 181(K). While the spot is being cooled down and excited with photolight at the same time, the trap level 0.25(eV) disappeared and the new trap level of 0.85(eV) appeared. It can be said that the better photo-conductive crystals, the T.S.C is better measured.

• The Transactions of the Korean Institute of Power Electronics
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• v.11 no.4
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• pp.313-320
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• 2006

In this paper, a design approach of LC trap filter for output side harmonic reduction of single phase NPC multilevel inverter is proposed, and THD of the output voltage and harmonic FFT of the output current are analyzed. The proposed filter consists of a conventional LCR filter cascaded with an LC trap filter and it is tuned to inverter switching frequency. A NPC multilevel inverter inverter is used an inverter system for high power application and DSP(TMS320C31) is used for the controller. The effectiveness of the proposed system confirmed through simulation and experimental results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.150-153
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• 2004

본 논문에서는 780 nm 고출력 레이저 다이오드의 신뢰성을 향상시키기 위하여 DLTS(deep level transient spectroscopy)을 이용하여 MOCVD(metalorganic chemical vapor deposition) 성장 조건 변화에 따른 $Al_{0.48}Ga_{0.52}As$와 $Al_{0.1}Ga_{0.9}As$ 물질에서의 깊은준위(deep level)의 거동을 조사하였다. DLTS 측정결과, MOCVD로 성장된 막에서만 나타나는 결함(defect)으로 추정되는 trap A(0.3 eV), DX center로 알려진 trap B, 갈륨(Ga) vacancy와 산소(O2) 원자의 복합체(complex)에 의한 결함인 trap D(0.6 eV) 및 EL2 라고 불리우는 trap E(0.9 eV)의 네 가지 깊은준위들이 관측되었고, 성장 조건의 변화에 따라 깊은 준위들의 농도가 감소하는 것을 관측함으로써 최적 성장 조건을 찾을 수 있었다.