• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.7
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• pp.576-582
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• 2002

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectrics were fabricated, and nitrogen distribution and bonding species which contribute to memory characteristics were analyzed. Also, memory characteristics of devices depending on the anneal temperatures were investigated. The devices were fabricated by retrograde twin well CMOS processes with $0.35\mu m$ design rule. The processes could be simple by in-situ process in growing dielectric. The nitrogen distribution and bonding states of gate dielectrics were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). As the nitridation temperature increased, nitrogen concentration increased linearly, and more time was required to form the same reoxidized layer thickness. ToF-SIMS results showed that SiON species were detected at the initial oxide interface which had formed after NO annealing and $Si_2NO$ species within the reoxidized layer formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. It could be said that nitrogen concentration near initial interface is limited to a certain quantity, so the excess nitrogen is redistributed within reoxidized layer and contribute to electron trap generation.

• Applied Science and Convergence Technology
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• v.26 no.5
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• pp.133-138
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• 2017

We investigated the interface defect engineering and reaction mechanism of reduced transition layer and nitride layer in the active plasma process on 4H-SiC by the plasma reaction with the rapid processing time at the room temperature. Through the combination of experiment and theoretical studies, we clearly observed that advanced active plasma process on 4H-SiC of oxidation and nitridation have improved electrical properties by the stable bond structure and decrease of the interfacial defects. In the plasma oxidation system, we showed that plasma oxide on SiC has enhanced electrical characteristics than the thermally oxidation and suppressed generation of the interface trap density. The decrease of the defect states in transition layer and stress induced leakage current (SILC) clearly showed that plasma process enhances quality of $SiO_2$ by the reduction of transition layer due to the controlled interstitial C atoms. And in another processes, the Plasma Nitridation (PN) system, we investigated the modification in bond structure in the nitride SiC surface by the rapid PN process. We observed that converted N reacted through spontaneous incorporation the SiC sub-surface, resulting in N atoms converted to C-site by the low bond energy. In particular, electrical properties exhibited that the generated trap states was suppressed with the nitrided layer. The results of active plasma oxidation and nitridation system suggest plasma processes on SiC of rapid and low temperature process, compare with the traditional gas annealing process with high temperature and long process time.

• Electrical & Electronic Materials
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• v.7 no.3
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• pp.231-235
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• 1994

The multi-dielectric layer $SiO_2$/$Si_3{N_4}$/$SiO_2$ (ONO) is used to improve charge retention and to scale down the memory device. The nitride layer of MNOS device is oxidize to form ONO system. During the oxidation of the nitride layer, the change of thickness of nitride layer and generation of interface state between nitride layer and top oxide layer occur. In this paper, effects of oxidation of the nitride layer is studied. The decreases of the nitride layer due to oxidation and trapping characteristics of interface state of multi layer dielectric film are investigated through the C-V measurement and F-N tunneling injection experiment using SONOS capacitor structure. Based on the experimental results, carrier trapping model for maximum flatband voltage shift of multi layer dielectric film is proposed and compared with experimental data. As a results of curve fitting, interface trap density between the top oxide and layer is determined as being $5{\times}10^11$~$2{\times}10^12$[$eV^1$$cm^2$].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.17-20
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• 2001

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by 0.35$\mu\textrm{m}$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary ton Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and Si$_2$NO species near the new Si-SiO$_2$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the Si-SiO$_2$ interface and contributed to electron trap generation.

• Journal of the Korean Physical Society
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• v.73 no.12
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• pp.1879-1883
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• 2018

We analyzed the deep-trap states of GaN/InGaN ultraviolet light-emitting diodes (UV LEDs) before and after electrical stress. After electrical stress, the light output power dropped by 5.5%, and the forward leakage current was increased. The optical degradation mechanism could be explained based on the space-charge-limited conduction (SCLC) theory. Specifically, for the reference UV LED (before stress), two sets of deep-level states which were located 0.26 and 0.52 eV below the conduction band edge were present, one with a density of $2.41{\times}10^{16}$ and the other with a density of $3.91{\times}10^{16}cm^{-3}$. However, after maximum electrical stress, three sets of deep-level states, with respective densities of $1.82{\times}10^{16}$, $2.32{\times}10^{16}cm^{-3}$, $5.31{\times}10^{16}cm^{-3}$ were found to locate at 0.21, 0.24, and 0.50 eV below the conduction band. This finding shows that the SCLC theory is useful for understanding the degradation mechanism associated with defect generation in UV LEDs.

• Korean journal of applied entomology
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• v.45 no.1 s.142
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• pp.59-66
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• 2006

The damaged area by and the distribution of Japanese gall forming thrips, Ponticulothrips diospyrosi Haga et Okajima (Thysanoptera: Phlaeothripidae) in Korea were surveyed based on the answers of persimmon growers to questionnaire. Seasonal occurrence of each developmental stage was estimated by monitoring the individuals in damaged leaves, and effect of trap site and side of sticky board were studied by yellow sticky traps at three sweet persimmon orchards in Gimhae and Jinju (orchards A and B), Gyeongnam province, Korea in 2005. P. diospyrosi gave damage to astringent persimmon as well as sweet one. The damaged area of persimmon orchard has sharply increased since 2000, reaching 446 ha nationwide; Gyeongnam province was most severely damaged, followed by Gyeongbuk and Jeonnam provinces. Most of the farmers answered that they sprayed insecticides and removed the damaged leaves to control P. diospyrosi. The overwintered adults were observed in the damaged-rolled leaves from mid May and the 1st generation adults from early-mid June. No thrips were observed in the damaged leaves after mid July. Yellow sticky trap data showed that peak adults catch of the overwintered generation was mid May, and that of the 1st generation was mid-late June in Gimhae and late June in Jinju. Sticky traps set at orchard-pine forest border caught significantly more number of the 1st generation adults than those at the orchard center, even though timing of peak catches was not different between the two sites. There was a tendency of more catches on the side of sticky trap facing pine forest than the other side facing orchard center, even though the catches on both sides showed no statistical difference.

• Journal of Power System Engineering
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• v.20 no.1
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• pp.18-23
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• 2016

As diesel engines have high power and good fuel economy on top of less $CO_2$ emissions, their market shares are increasing not only in commercial vehicles but also in passenger cars. LNT, urea-SCR and combination of them have been developed for after-treatment of the exhaust gas to reduce NOx on diesel vehicles. The aim of this study is to investigate the $NH_3$ generation characteristics of LNT catalyst downstream. It was found from the experiments of the LNT catalyst that $H_2$ was useful as a reductant in SCR catalyst because it can enhance the de-NOx performance and improve $NH_3$ selectivity. The $NH_3$ generation of the LNT, when hydrothermally aged at $900^{\circ}C$ for 18 hr, increased to about 90ppm at $300^{\circ}C$ due to Pt sintering and Ba agglomeration. LNT catalyst was most sulfur poisoning at $500^{\circ}C$. The $NH_3$ slip increased due to the reduction of residence time according to SV increase.

• International Journal of Oral Biology
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• v.31 no.2
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• pp.67-72
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• 2006

Nitric oxide(NO) is a labile, uncharged, reactive radical that functions as a sensitive mediator of intercellular communication in diverse tissues. It has been reported that NO is produced by osteoblast and these results may suggest that NO is integrally involved in the regulation of osteoclast formation and osteoclast resorption activity by osteoblastic cells. We examined the effect of cytokines on NO release by mouse bone marrow cell. We also examined the effects of cytokines and sodium nitroprusside(SNP) on the formation of osteoclast-like cell from mouse bone marrow cells in culture. Cytokines stimulated NO production of mouse bone marrow cells, and N-nitro-L-arginine methyl ester, a specific inhibitor of NO synthase, suppressed the cytokine-induced NO production. SNP showed dual action in the generation of osteoclasts. The addition of $30{\mu}M$ SNP inhibited the formation of tartrate resistant acid phosphatase(TRAP)(+) multinucleated cell, whereas lower concentration($3{\mu}M$) of SNP enhanced it. Although the precise action of NO remains to be elucidated in detail, the action of NO in osteoclast generation in our studies seems to be associated, at least in part, with bone metabolism and bone pathophysiology.

• Journal of the Society of Naval Architects of Korea
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• v.58 no.1
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• pp.32-39
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• 2021

Korean coastal fishery suffers from profitability degradation due to a decrease in fisheries resources, pollution in coastal waters, fuel coast increase, and market opening for aquaculture products. The next generation Korean fishing vessel aims at the improvement of energy efficiency, enhancement of crew welfare, and safety. These purposes can be accomplished by adopting a new standard hull form with improved resistance performance and a modernized residence facility on the deck. In order to improve resistance performance, this study attempts to optimize design variables for stern flaps for three kinds of fishing vessels - coastal multi-purpose, coastal trap, and dredged nets. A series of model tests for these fishing vessels was carried out in the towing tank of Pusan National University. The results indicate that for some cases, the stern flap caused the stern trim of the vessel to decrease, leading to the resistance reduction.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.361-364
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• 2009

KEPRI has studied planar type SOFC stacks using anode-supported single cells and kW class co-generation systems for residential power generation. A 1kW class SOFC system consisted of a hot box part, a cold BOP part and a water reservoir. A hot box part contains a SOFC stack made up of 48 cells with $10{\times}10cm^2$ area and ferritic stainless steel interconnectors, a fuel reformer, a catalytic combustor and heat exchangers. Thermal management and insulation system were especially designed for self-sustainable operation. A cold BOP part was composed of blowers, pumps, a water trap and system control units. When a 1kW class SOFC system was operated at $750^{\circ}C$ with hydrogen, the stack power was 1.2kW at 30 A and 1.6kW at 50A. Turning off an electric furnace, the SOFC system was operated using hydrogen and city gas without any external heat source. Under self-sustainable operation conditions, the stack power was about 1.3kW with hydrogen and 1.2kW with city gas respectively. The system also recuperated heat of about 1.1kW by making hot water. Recently KEPRI developed stacks using $15{\times}15cm^2$ cells and tested them. KEPRI will develop a 5 kW class CHP system using $15{\times}15cm^2$ stacks by 2010.