• Journal of the Semiconductor & Display Technology
• /
• v.19 no.4
• /
• pp.11-17
• /
• 2020

In this study, a new method for fabricating flexible transparent electrodes based on silver nanowire-polymer (AgNW-PEDOT:PSS) composite materials having a mesh pattern formed by a solution-based process without lithography was proposed. By optimizing conditions such as the amount of ultraviolet (UV) photosensitizer injected into the suspension of AgNW and PEDOT:PSS, UV exposure time, and deionized (DI) washing time, a clear and uniform mesh pattern was obtained. For the fabricated AgNW-PEDOT:PSS-based mesh-type electrodes, characteristics such as electrical sheet resistance, light transmittance, haze, and bending flexibility were analyzed according to the mixing ratio of AgNW and PEDOT:PSS included in the suspension. The fabricated mesh electrodes typically exhibited a low electrical sheet resistance of less than 20 Ω/sq while maintaining a high transmittance of 80% or more. In addition, it was confirmed from the results of analyzing the effect of PEDOT:PSS on the characteristics of the mesh-type AgNW-PEDOT electrode that the optical visibility was greatly enhanced by reducing the surface roughness and haze, and the bending flexibility was remarkably improved.

• Journal of the Semiconductor & Display Technology
• /
• v.22 no.1
• /
• pp.33-38
• /
• 2023

As the demand for large flexible displays such as tablet computers continues to rise, there is an increasing need for cost-efficient colorless and optically transparent polyimide film that can meet the desired performance, particularly optical transmittance. In this study, we investigated a detailed procedure for achieving optimal optical transmittance using two different combinations of monomers: 6FDA+BAPB and 6FDA+BPA+TFDB. We employed a design of experiment method to systematically synthesize polymers, allowing for the optimization of optical transmittance. In addition, we were able to achieve uniform thickness in the films by using a doctor blade. By comparing the price and optical transmittance of four different monomer combinations, we obtained fundamental data on the production of polyimide films that can be customized to meet the specific price and performance requirements of manufacturers. This approach enables users to select the most suitable polyimide film based on their desired price and performance parameters while achieving optimal optical transmittance.

• Applied Science and Convergence Technology
• /
• v.25 no.6
• /
• pp.145-148
• /
• 2016

This paper, Al-doped ZnO(AZO) thin films for application as transparent conducting oxide films were deposited on the Corning glass substrate by using RF magnetron sputtering system. The effects of various Argon gas flow rates on optical and electrical characteristics of AZO films were investigate sputtering method. The Carrier Concentration is enhanced as Ar gas rate increases, and also the oxygen vacancy concentration. The figure of merit obtained in this study means that AZO films which deposited Ar gas rate of 75 sccm have the highest Carrier concentration and Hall mobility, which have the highest photoelectrical performance that it could be used as transparent electrodes.

• Journal of the Semiconductor & Display Technology
• /
• v.13 no.1
• /
• pp.91-95
• /
• 2014

(F,Ga) co-doped ZnO thin film on glass substrate was fabricated via a simple non-alkoxide sol-gel spin-coating. Contrary to the F single doped ZnO thin film, the (F,Ga) co-doped thin film showed a significant reduce in electrical resistivity after a second post-heat-treatment in reducing environment. The resulting decrease in electrical resistivity with Ga co-doping is considered to be resulted from the increases both carrier density and mobility. The optical transmittance of the (F,Ga) co-doped thin film in the visible range showed higher transmittance with Ga co-doping compared with F single doped ZnO thin film.

• Journal of the Semiconductor & Display Technology
• /
• v.7 no.1
• /
• pp.53-57
• /
• 2008

$Pb(ZrTi)O_3$ thin films were prepared on transparent conducting oxides, through sol-gel processing. The processing variables such as spin velocity, spin time and annealing temperature were investigated using a statistical design of experiments. Dielectric properties were determined through capacitance-voltage measurements and electrical characterizations evaluated using current-voltage characteristics. The leakage currents is determined mainly by annealing. The capacitance and breakdown voltage is found to be independent of the processing variables. The sophisticatedly controlled PZT thin films have been confirmed through microscopic images.

• Transactions on Electrical and Electronic Materials
• /
• v.17 no.4
• /
• pp.201-203
• /
• 2016

Transparent conductive multilayers have been fabricated using transparent amorphous Si doped indium oxide (ISO) semiconductors and metallic Ag of ISO/Ag/ISO. The resistivity of a multilayer is dependent on the middle layer thickness of silver. The thickness of the Ag layer is fixed at 11 nm and takes into account cost and optical transmittance. As-deposited ISO/Ag (11 nm)/ISO multilayer shows a measured resistivity of 7.585×10⁻⁵ Ω cm. After a post annealing treatment of 400℃, the resistivity is reduced to 4.332×10⁻⁵ Ω cm. The reduction of resistivity should be explained that the mobility of the multilayer increased due to the optimized crystalline, meanwhile, the Hall concentration of the multilayer showed an obscure change because the carriers mainly come from the insert of the Ag layer.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2007.11a
• /
• pp.76.2-76.2
• /
• 2007

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.4
• /
• pp.290-293
• /
• 2012

This article introduces the characterization of spin coated ZnO transparent conducting oxide on the flexible substrates. As a II-IV compound semiconductor, ZnO has a wide band gap of 3.37 eV with transparent properties. Due to this transparent properties, ZnO materials can be also employed as the transparent conducting electrode materials. Therefore, strong demands have been required for the transparent electrodes with low temperature processing and cheap cost. So, We will investigate the electrical property and optical transmittance of ZnO transparent conducting oxide through the 4-point probe resistivity meter, and ultraviolet-vis spectrometer Lamda 35, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.28 no.6
• /
• pp.351-359
• /
• 2015

Next-generation displays should be transparent and flexible as well as having high resolution and frame number. The main factor for active matrix organic light emitting diode and next-generation displays is the development of TFTs (thin-film transistors) with high mobility and large area uniformity. The TFTs used for transparent displays are mainly oxide TFT that has oxide semiconductor as channel layer. Zinc-oxide based substances such as indium-gallium-zinc-oxide has attracted attention in the display industry. In this paper, the mobility improvement of low cost oxide TFT is studied for fast operating next-generation displays by overcoming disadvantages of amorphous silicon TFT that has low mobility and poly silicon TFT that requires expensive equipment for complex process and doping process.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.543-544
• /
• 2008

In the fabrication of inverted top emission organic light emitting diodes (ITOLEDs), the organic layers are damaged by high-energy plasma sputtering process for transparent top anode. In this study, the plasma process induced damages on metal oxide hole injection layers (HILs) including $WO_3$, $MoO_3$, and $V_2O_5$ as buffer layer are examined. With the result of IV characteristic of hole-only devices, we propose that $MoO_3$ and $V_2O_5$ are stable materials against plasma sputtering process.