• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.161.2-161
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• 2003

• Ceramist
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• v.10 no.3
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• pp.48-54
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• 2007

Glass-ceramics transparent above $10\;{\mu}m$ in the infrared, have been synthesized. They are based on germanium and antimony sulphides or selenides associated to alkali halides. They are prepared by heating glass samples at temperatures above the glass transition, as a function of time. Ceramisation can be controlled, so that sub-100 nm crystals are generated in the glass matrix. Then, low light scattering is achieved and the transparency window of the original glass is maintained. When gallium sulphide is added, glass ceramics can be doped with rare-earth ions. Emissions from the $^4F_{3/2}$ and $^4I_{13/2}$ of $Nd^{3+}$ and $Er^{3+}$ ions, respectively, are more intense in glass-ceramics, as compared to their vitreous counterpart. Examination of band profiles and decaytimes show that rare-earth ions are embedded in both crystalline and glassy environments.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.4
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• pp.180-188
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• 2013

The glass of E-glass fiber composition was fabricated by using refused coal ore which is obtained as by-product from Dogye coal mine in Samcheok. We used silica-alumina refused coal ore which has low carbon content relatively, and the amount of refused coal ore has been changed from 0 to 35 % in batch composition. E-glass was fabricated by the melting of mixed batch materials at $1550^{\circ}C$ for 2 hrs with different refused coal ore composition of 0~35 %. We obtained a transparent and clear glass with high visible light transmittance value of 81~84%, thermal expansion coefficient of $5.39{\sim}5.61{\times}10^{-6}/^{\circ}C$ and softening point of $851{\sim}860^{\circ}C$. The glass fiber samples were also obtained through fiberizing equipment at $1150^{\circ}C$, and tested chemical resistance and tensile strength to evaluate the mechanical property as a reinforced glass fiber of composite material. As the result, we identified the properties of E-glass fiber by using refused coal ore are plenty good enough compare to that of normal E-glass without refused coal ore, and confirmed the possibility of refused coal ore as for the raw material of E-glass fiber.

• Journal of the Korean Ceramic Society
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• v.43 no.9 s.292
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• pp.569-574
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• 2006

Transparent glass-ceramics containing fresnoite crystals have been prepared by controlled heat treatment in $K_2O-BaO-TiO_2-SiO_2$ and their nonlinear optical and luminescent properties were investigated using Maker fringe method and Spectrofluorometer. The second harmonic generation was observed in all samples and the values decreased with increasing $K_2O$ content. The luminescence of blue light at ${\sim}482nm$ could be observed and it was shown that the luminescent property was controlled by the $K_2O$ content.

• Journal of the Korean Ceramic Society
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• v.53 no.3
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• pp.338-342
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• 2016

ZnO thin film co-doped with F and Al was prepared on a glass substrate via simple non-alkoxide sol-gel spin coating. For a fixed F concentration, the addition of Al co-dopant was shown to reduce the resistivity mainly due to an increase in electrical carrier density compared with ZnO doped with F only, especially after the second post-heat-treatment in a reducing environment. There was no effective positive contribution to the reduction in resistivity due to the mobility enhancement by the addition of Al co-dopant. Optical transmittance of the ZnO thin film co-doped with F and Al in the visible light domain was shown to be higher than that of the ZnO thin film doped with F only.

• Journal of the Korean Ceramic Society
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• v.41 no.2
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• pp.102-105
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• 2004

ZnO-In$_2$O$_3$ films were fabricated on Corning 1737 glass substrate by an electron beam evaporation technique and their characteristics were investigated. The composition of ZnO-In$_2$O$_3$ films had a marked effect on the electrical properties of the films. The ZnO-In$_2$O$_3$ films showed superior transparent-conducting characteristics with increase of Zn content. The resistivity and carrier concentration of the film having Zn content of 45 at% are 4.45${\times}$10$^{-3}$ cm and 3.1${\times}$10$^{19}$ cm$^{-3}$ , respectively. Also, the transmittance was higher than 80% throughout the visible range. The average roughness of the film was 14.6 $\AA$ in terms of root mean square.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.50-54
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• 1999

Plasma display panel is a potential candidate for HDTV, due to the fact that the screen size can easily be increased by a thick film technology. In this study, transparent dielectric materials which satisfied the requirements of dielectrics for PDP was developed using lead alumina borosilicate glasses. The Paste which had thixotropic behavior suitable for screen printing was made of this glass composition. the paste became more thixotropic as the particle size decreased. After firing, the cross sectional area of the thick film was analyzed by SEM. The voids in the thick film were removed using bimodal particle system. The dielectric thick film showed good adhesion characteristics.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.676-680
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• 2010

Most TCOs such as ITO, AZO(Al-doped ZnO), FTO(F-doped $SnO_2$) etc., which have been widely used in LCD, touch panel, solar cell, and organic LEDs etc. as transparent electrode material reveal n-type conductivity. But in order to realize transparent circuit, transparent p-n junction, and introduction of transparent p-type materials are prerequisite. Additional prerequisite condition is optical transparency in visible spectral region. Oxide based materials usually have a wide optical bandgap more than ~3.0 eV. In this study, single-phase transparent semiconductor of $SrCu_2O_2$, which shows p-type conductivity, have been synthesized by 2-step solid state reaction at $950^{\circ}C$ under $N_2$ atmosphere, and single-phase $SrCu_2O_2$ thin films of p-type TCOs have been deposited by RF magnetron sputtering on alkali-free glass substrate from single-phase target at $500^{\circ}C$, 1% $H_2$/(Ar + $H_2$) atmosphere. 3% $H_2$/(Ar + $H_2$) resulted in formation of second phases. Hall measurements confirmed the p-type nature of the fabricated $SrCu_2O_2$ thin films. The electrical conductivity, mobility of carrier and carrier density $5.27{\times}10^{-2}S/cm$, $2.2cm^2$/Vs, $1.53{\times}10^{17}/cm^3$ a room temperature, respectively. Transmittance and optical band-gap of the $SrCu_2O_2$ thin films revealed 62% at 550 nm and 3.28 eV. The electrical and optical properties of the obtained $SrCu_2O_2$ thin films deposited by RF magnetron sputtering were compared with those deposited by PLD and e-beam.

• Journal of the Korean Vacuum Society
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• v.18 no.5
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• pp.394-401
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• 2009

This paper reports the structural and optical properties of ZnO/glass thin films grown by radio-frequency magnetron sputtering with a powder target. In contrast to ZnO ceramic target typically used, a ZnO raw powder target was sputtered in this study. ZnO grew with the (0002) preferred orientation along the surface normal direction. Initially, the surface of ZnO thin films was flat considerably and then it became rougher as the thickness increased. The optical transmittance was as high as 88% in the range of 400-1000 nm. The bandgap energy of 3.23 eV at the 220 nm thick sample was estimated.

• Analytical Science and Technology
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• v.6 no.2
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• pp.239-246
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• 1993

The structure of $(BaSr)TiO_3$ thin film deposited on ITO coated glass, bare glass and (100) Si substrates was not changed, but the crystallinity was improved by the polycrystalline ITO layer and (100) Si substrate. The composition of $(BaSr)TiO_3$ thin film deposited on ITO coated glass was nearly stoichiometric ((Ba+Sr)/Ti=1.08~1.09) and very uniform through all deposition process. But as the deposition temperature increases, the interdiffusion between grown thin film and ITO layer and between ITO layer and base glass is severer. $(BaSr)TiO_3$ thin film deposited on ITO coated glass substrate was highly transparent. The refractive index($n_f$) of $(BaSr)TiO_3$ thin film deposited on ITO coated glass was 2.138~2.286 as a function of substrate temperature.