• 제목/요약/키워드: Transparent film

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AZO 투명 전극 기반 반투명 실리콘 박막 태양전지 (AZO Transparent Electrodes for Semi-Transparent Silicon Thin Film Solar Cells)

  • 남지윤;조성진
    • 한국전기전자재료학회논문지
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    • 제30권6호
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    • pp.401-405
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    • 2017
  • Because silicon thin film solar cells have a high absorption coefficient in visible light, they can absorb 90% of the solar spectrum in a $1-{\mu}m$-thick layer. Silicon thin film solar cells also have high transparency and are lightweight. Therefore, they can be used for building integrated photovoltaic (BIPV) systems. However, the contact electrode needs to be replaced for fabricating silicon thin film solar cells in BIPV systems, because most of the silicon thin film solar cells use metal electrodes that have a high reflectivity and low transmittance. In this study, we replace the conventional aluminum top electrode with a transparent aluminum-doped zinc oxide (AZO) electrode, the band level of which matches well with that of the intrinsic layer of the silicon thin film solar cell and has high transmittance. We show that the AZO effectively replaces the top metal electrode and the bottom fluorine-doped tin oxide (FTO) substrate without a noticeable degradation of the photovoltaic characteristics.

대면적 탄소나노튜브 / 은나노와이어 투명전극필름 롤투롤 연속생산시스템 (Roll-to-roll Continuous Manufacturing System for Carbon-Nanotube- / Silver-Nanowire-Based Large-Area Transparent Conductive Film)

  • 박장훈;이창우
    • 한국정밀공학회지
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    • 제32권8호
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    • pp.673-680
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    • 2015
  • A roll-to-roll (R2R) continuous manufacturing system for a carbon-nanotube (CNT)-/silver-nanowire (AgNW)- based large-area transparent conductive film was introduced in this study. The systemic guidelines of the R2R slot-die coating process including roll eccentricity, wrap angle, pump accuracy, and blower influence were discussed. To simulate the coating phenomenon, we investigated the governing parameters of the coating process by incorporating the estimated relative thickness that was defined by combining the viscocapillary model and volume model. By using experimental and mathematical approaches, an excellent transparent conductive layer with a $40{\Omega}/{\Box}$ sheet resistance and 88 % transmittance was obtained; moreover, a dimensionless number identifies the correlation between the transparent conductive film and the anti-reflection film.

반응성 스퍼트링에 의한 ITO의 형성과 유전체 소성공정중의 특성변화에 관한 연구 (The Effect of Dielectric Firing Process in PDP on the Properties of ITO Prepared by Reactive RF Sputtering)

  • 남상옥;지성원;손제봉;조정수;박정후
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1997년도 추계학술대회 논문집
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    • pp.510-514
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    • 1997
  • The thin film that is electrically conductive and optically transparent is called conductive transparent thin film. ITO(Indium-Tin Oxide) which is a kind of conductive transparent thin film has been widely used in solar cell, transparent electrical heater, selective optical filter, FDP(Flat Display Panel) such as LCD(Liquid Crystal Display), PDP(Plasma Display Panel) and so on. Especially in PDP, ITO films is used as a transparent electrode in order to maintain discharge and decrease consumption power through the improvement of cell structure. In this study, we prepared ITO by reactive r.f. sputtering with indium-tin(Sn 10wt%) alloy target instead of indium-tin oxide target. The ITO films deposited at low temperature 15$0^{\circ}C$ and 8% $O_2$. Partial pressure showed about 3.6 Ω/$\square$. At the end of firing, the resistance of ITO was decreased, the optical transparence was improved above 90%.

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Developments of Transparent ac-PDPs

  • Choi, Hak-Nyun;Lee, Seog-Young;Kim, Yong-Seog
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.1621-1624
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    • 2008
  • Transparent ac-PDP test panel was prepared via a combination of materials including ITO sustaining electrodes, thin film dielectric layer and nano-sized phosphor powders. The thin film dielectric layer was prepared by E-beam evaporation process and phosphor layer was deposited on metal mesh pattern by electrophoretic deposition process. The optical transmittance and luminance of the panel indicated that full color transparent ac-PDP is feasible with the approach.

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투명한 p형 반도체 CuAlO2 박막의 일산화질소 가스 감지 특성 (Nitrogen Monoxide Gas Sensing Characteristics of Transparent p-type Semiconductor CuAlO2 Thin Films)

  • 박수정;김효진;김도진
    • 한국재료학회지
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    • 제23권9호
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    • pp.477-482
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    • 2013
  • We investigated the detection properties of nitrogen monoxide (NO) gas using transparent p-type $CuAlO_2$ thin film gas sensors. The $CuAlO_2$ film was fabricated on an indium tin oxide (ITO)/glass substrate by pulsed laser deposition (PLD), and then the transparent p-type $CuAlO_2$ active layer was formed by annealing. Structural and optical characterizations revealed that the transparent p-type $CuAlO_2$ layer with a thickness of around 200 nm had a non-crystalline structure, showing a quite flat surface and a high transparency above 65 % in the range of visible light. From the NO gas sensing measurements, it was found that the transparent p-type $CuAlO_2$ thin film gas sensors exhibited the maximum sensitivity to NO gas in dry air at an operating temperature of $180^{\circ}C$. We also found that these $CuAlO_2$ thin film gas sensors showed reversible and reliable electrical resistance-response to NO gas in the operating temperature range. These results indicate that the transparent p-type semiconductor $CuAlO_2$ thin films are very promising for application as sensing materials for gas sensors, in particular, various types of transparent p-n junction gas sensors. Also, these transparent p-type semiconductor $CuAlO_2$ thin films could be combined with an n-type oxide semiconductor to fabricate p-n heterojunction oxide semiconductor gas sensors.

Approach to High Stable Oxide Thin-Film Transistors for Transparent Active Matrix Organic Light Emitting Devices

  • Cheong, Woo-Seok;Lee, Jeong-Min;Jeong, Jae-Kyeong;KoPark, Sang-Hee;Yoon, Sung-Min;Cho, Doo-Hee;Ryu, Min-Ki;Byun, Chun-Won;Yang, Shin-Hyuk;Chung, Sung-Mook;Cho, Kyoung-Ik;Hwang, Chi-Sun
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.382-384
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    • 2009
  • In this study, high stable oxide thin-film transistors (TFTs) have been developed by using several approaching techniques, which including a change of the channel composition ratio in multi-component oxide semiconductors, a change of TFT structure with interfacial dielectric layers, a control of interface roughness, a channel-doping method, and so on.

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Characterization of ZnO for Transparent Thin Film Transistor by Injection Type Delivery System of ALD

  • Choi, Woon-Seop
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.860-863
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    • 2007
  • ZnO nano film for transparent thin film transistors is prepared by injection type source delivery system of atomic layer deposition. By using this delivery system the source delivery pulse time can dramatically be reduced to 0.005s in ALD system. ZnO nanofilms obtained at $150^{\circ}C$ are characterized.

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PDP용 무연 투명유전체의 Dry Film 개발 (Development of Dry Films of Lead-free Transparent Dielectrics for PDP)

  • 이지훈;방재철
    • 한국산학기술학회논문지
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    • 제6권6호
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    • pp.497-501
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    • 2005
  • Dry film 공정에 의해 PDP(Plasma Display Panel)용 무연 투명유전체를 제조하였다. 여러 슬러리 조성으로부터 고밀도 green sheet를 제조하는데 최적의 조성을 선정하였다. 한편, 슬러리는 양질의 green sheet를 제작하는데 적합한 shear thinning 특성을 나타냈다. 제조한 투명유전체의 열팽창계수는 유리기판인 PD-200과 유사한 $97{\times}10^{-7}/^{\circ}C$로 측정되었다. PD-200에 접합된 투명유전체의 단면 주사현미경 관찰로부터 두 층은 갭이 없이 매우 견실히 접합되어 있음을 확인할 수 있었다.

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