• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.347-350
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• 2013

By inserting a very thin metal layer of Ag between two outer oxide layers of amorphous silicon indium zinc oxide (SIZO), we fabricated a highly transparent SIZO/Ag/SIZO multilayer on a glass substrate. In order to find the optimized thickness of Ag layers, we investigated the variation of optical properties depending on Ag thickness. It was found that the transition of Ag layer from island formation to a continuous film occurred at a critical thickness. Continuity of the Ag film is very important for optical properties in SIZO/Ag/SIZO multilayer. With about 15 nm thick Ag layer, the multilayer showed a high optical transmittance of 80% at 550 nm and low emissivity in IR.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.70-71
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• 2005

The material that is both conductive in electricity and transparent to the visible ray is called transparent conducting thin film. It is investigated the performance of ITO-CMP process using commercial silica slurry with the various conditioning temperatures by control of de-ionized water (DIW). Removal rate of ITO thin film was improved after CMP process after pad conditioning at the high temperature by improved exclusion of slurry residues in polishing pad..

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.116.1-116.1
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• 2011

Materials with a combination of high electrical conductivity and optical transparency are important components of many electronic and optoelectronic devices such as liquid crystal displays, solar cells, and light emitting diodes. In this study, to fabricate a low-resistance and high optical transparent electrode film for organic photovoltaic, the following steps were performed: the design and manufacture of an electroforming stamp mold, the fabrication of thermal roll imprinted (TRI) poly-carbonate (PC) patterned films, the manufacture of high-conductivity and low-resistance Ag paste which was filled into patterned PC film using a doctor blade process and then coated with a thin film layer of conductive polymer by a spin coating process. As a result of these imprinting processes the PC films obtained a line width of $10{\pm}0.5{\mu}m$, a channel length of $500{\pm}2{\mu}m$, and a pattern depth of $7.34{\pm}0.5{\mu}m$. After the Ag paste was used to fill part of the patterned film with conductive polymer coating, the following parameters were obtained: a sheet resistance of $9.65{\Omega}$/sq, optical transparency values were 83.69 % at a wavelength of 550 nm.

• Current Photovoltaic Research
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• v.5 no.4
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• pp.135-139
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• 2017

We fabricated two different transparent conducting oxide thin films of ZnO doped with Ga ($Ga_2O_3$ 0.9 wt%) as well as Al ($Al_2O_3$ 2.1 wt%) (GAZO) and ZnO doped only with Al ($Al_2O_3$ 3 wt%) (AZO). It was investigated how it affects the moisture resistance of the transparent electrode. In addition, $Cu(In,Ga)Se_2$ thin film solar cells with two transparent oxides as front electrodes were fabricated, and the correlation between humidity resistance of transparent electrodes and device performance of solar cells was examined. When both transparent electrodes were exposed to high temperature distilled water, they showed a rapid increase in sheet resistance and a decrease in the fill factor of the solar cell. However, AZO showed a drastic decrease in efficiency at the beginning of exposure, while GAZO showed that the deterioration of efficiency occurred over a long period of time and that the long term moisture resistance of GAZO was better.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.106-106
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• 2009

Al-doped ZnO (AZO) thin films were grown on glass substrates by co-sputtering at room temperature. We made ZnO and Al target and ZnO:Al film is deposited with sputter which has two RF gun source. The Al content was controlled by varying Al RF power and effect of Al contents on the properties of ZnO:Al film was investigated. Crystallinity and orientation of the ZnO:Al films were investigated by X-ray diffraction (XRD), surface morphology of the ZnO:Al films was observed by atomic force microscope. Electrical properties of the ZnO:Al films were measured at room temperature by van der Pauw method and hall measurement. Optrical properties of ZnO:Al films were measured by UV-vis-NIR spectrometer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.404-405
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• 2007

Tin-doped indium thin film is outstanding material among transparent Conductive Oxide (TCO) materials. ITO thin films show a low electrical resistance(<$10^{-4}\;[{\Omega}{\cdot}m]$) and high transmittance(>80%) in the visible range. ITO thin films usually have been deposited on the glass substrate. In order to apply flexible display, the substrate should have the ability to bend and be deposited without substrate heat. Also properties of ITO thin film depend on what kind of substrate. In this study, we prepared ITO thin film on the polycarbonate (PC) substrate by using Facing Target Sputtering (FTS) system. Before deposition of ITO thin film, PC substrate took plasma surface treatment. The electrical and surface properties of as-deposited thin films were investigated by Hall Effect measurement, UV/VIS spectrometer and the surface property of substrate is investigated by Contact angle measurement.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.12
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• pp.1044-1048
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• 2007

With development of electronic products the demands for miniaturization and weight-lightening have increased until a recent date. Accordingly, The effort to substitute glass substrates was widely made. However, polymer substrates have weak point that substrates were damaged at high temperature. In this paper, we deposited transparent conductive film at low temperature. And we inserted Au thin film between oxide to compensate for deteriorated electrical characteristics. Ga-doped ZnO(GZO) multilayer coatings were deposited on glass substrate by DC sputtering. The optimization of deposition conditions of both AZO and Au layers were performed to obtain better electrical and optical characteristics in advance. We presumed that the properties of multilayer were affected by the deposition process of both GZO and Au layers. The best multilayer coating exhibited the resistivity of $2.72{\times}10^{-3}\;{\Omega}-cm$ and transmittance of 77 %. From these results, we can confirm a possibility of the application as transparent conductive electrodes.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.394-397
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• 2012

In this work, we studied the influence of the dopant elements concentration on the properties of SnO2 thin films deposited by pulsed laser deposition. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Hall effect measurement and UV-Vis studies were performed to characterize the deposited films. XRD results showed that the films had polycrystalline nature with tetragonal rutile structure. FE-SEM micrographs revealed that the as deposited films composed of dense microstructures with uniform grain size distribution. All the films show n-type conduction and the best transparent conductive oxide (TCO) performance was obtained on 6 wt% Sb2O5 doped SnO2 film prepared at pO2 of 60mtorr and Ts of 500 ℃. Its resitivity, optical transmittance, figure of merit are 7.8 × 10-4 Ω cm, 85% and 1.2 × 10-2 Ω-1, respectively.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.73-79
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• 2008

In order to apply for transparent conductive oxide(TCO), we deposited ZnO thin films on the glass at room temperature by RF magnetron sputtering method. Deposition conditions for high transmittance and low resistivity were optimized in our previous studies. Under the deposition condition with the RF power of 200 W, target to substrate distance of 30 mm and working pressure of 5 mTorr, highly conductive($7.4{\times}10^{-3}{\Omega}cm$) and transparent(over 85%) ZnO films were prepared. Highly oriented ZnO film in the [002] direction were obtained with specifically designed ZnO targets. Systematic study on dependence of deposition parameters on electrical and optical properties of the as-grown ZnO films were mainly investigated in this work. And for application tests using these films as transparent conductive oxide anodes, wet chemical etching behaviors of ZnO films were also investigated using various chemicals. Wet-chemical etching behavior of ZnO films were investigated using various acid solutions. The concentrations of these different acid solutions were controlled to study the etching shapes and etching rate. ZnO films were anisotropically etched at various concentrations and wet etching led to crater-like surface structure. Also we firstly found that the etching rate and etching shapes of ZnO films strongly depended on the etchant concentrations (i.e. pH) and the etching rate is exponentially decreased with increasing pH values regardless of the acid etchants.

• Korean Journal of Materials Research
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• v.21 no.6
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• pp.341-346
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• 2011

In this study, we inserted a Zn buffer layer into a AZO/p-type a-si:H layer interface in order to lower the contact resistance of the interface. For the Zn layer, the deposition was conducted at 5 nm, 7 nm and 10 nm using the rf-magnetron sputtering method. The results were compared to that of the AZO film to discuss the possibility of the Zn layer being used as a transparent conductive oxide thin film for application in the silicon heterojunction solar cell. We used the rf-magnetron sputtering method to fabricate Al 2 wt.% of Al-doped ZnO (AZO) film as a transparent conductive oxide (TCO). We analyzed the electro-optical properties of the ZnO as well as the interface properties of the AZO/p-type a-Si:H layer. After inserting a buffer layer into the AZO/p-type a-Si:H layers to enhance the interface properties, we measured the contact resistance of the layers using a CTLM (circular transmission line model) pattern, the depth profile of the layers using AES (auger electron spectroscopy), and the changes in the properties of the AZO thin film through heat treatment. We investigated the effects of the interface properties of the AZO/p-type a-Si:H layer on the characteristics of silicon heterojunction solar cells and the way to improve the interface properties. When depositing AZO thin film on a-Si layer, oxygen atoms are diffused from the AZO thin film towards the a-Si layer. Thus, the characteristics of the solar cells deteriorate due to the created oxide film. While a diffusion of Zn occurs toward the a-Si in the case of AZO used as TCO, the diffusion of In occurs toward a-Si in the case of ITO used as TCO.