• 반도체디스플레이기술학회지
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• 제17권4호
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• pp.32-36
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• 2018

For various oxygen($O_2$) to argon(Ar) gas ratio, aluminum-doped zinc oxide(AZO) films were deposited for 3 min at different duty ratio by changing reverse pulse times. As the duty ratio increased, the thickness of the AZO film decreased and the sheet resistance increased. It can be concluded that When sputtering AZO Thin film, oxygen interfered with sputtering. When the reverse time was increased, the thickness of AZO was proportional to the real sputtering time and decreased. From the optical transmittance and sheet resistance, it was possible to obtain a higher figure of merits of AZO at a lower reverse pulse time. Even at the short reversed pulse time, it can be concluded that the accumulated charges on the AZO target are completely cleared. At a lower reverse pulse time, pulsed-DC sputtering of AZO is expected to be used instead of DC sputtering in the deposition of transparent conductive oxide(TCO) films without any degradation in thickness and structural/electrical characteristics.

• 한국전기전자재료학회논문지
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• 제36권1호
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• pp.49-55
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• 2023

The deposition of indium zinc oxide (IZO) thin films was carried out on substrate at room temperature by RF magnetron sputtering. The effects of substrate temperature, RF power and deposition pressure were investigated with respect to physical and optical properties of films such as deposition rate, electrical properties, structure, and transmittance. As the RF power increases, the resistivity gradually decreases, and the transmittance slightly decreases. For the variation of deposition pressure, the resistivity greatly increases, and the transmittance is decreased with increasing deposition pressure. As a result, it was demonstrated that an IZO film with the resistivity of 3.89 × 10^-4 Ω∙cm, the hole mobility of 51.28 cm²/Vs, and the light transmittance of 86.89% in the visible spectrum at room temperature can be prepared without post-deposition annealing.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.430.2-430.2
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• 2016

The front transparent conductive oxide (TCO) films in thin fill solar cell should exhibit high transparency, conductivity, good surface morphology and excellent light scattering properties. The light trapping phenomenon is limited due to random surface structure of TCO films. The proper control of surface structure and uniform cauliflower TCO films may be appropriate for efficient light trapping. We report light trapping scheme of ICP-RIE glass texturing by SF6/Ar plasma for high roughness and haze ratio of ITO films. It was observed that the variation of etching time, pattern size and Ar flow ratio during ICP-RIE process were important factors to improve the diffused transmittance and haze ratio of textured glass. The ICP-RIE textured glass showed low etching rates due to the presence of metal elements like Al, B, F and Na. The ITO films deposited on textured glass substrates showed the high RMS roughness and haze ratio in the visible wavelength region. The change in surface morphology showed negligible influence on electrical and structural properties of ITO films. The ITO films with high roughness and haze ratio can be used to improve the performance of thin film solar cells.

• 한국광학회지
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• 제13권4호
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• pp.363-369
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• 2002

디스플레이 기기에 사용할 수 있는 전도성 투과필터를 저방출(low-emissivity) 코팅인 [유전체|Ag|유전체] 구조를 이용하여 설계하였다. [$TiO_{2}$|Ti|Ag|$TiO_{2}$] 구조를 반복하고 어드미턴스 방법을 이용하여 가시광선 영역의 투과율을 높이고, 근적외선의 투과율은 낮게 하였다. 전도성 투과필터를 radio frequency(RF) 마그네트론 스퍼터링 방법으로 증착하고 설계한 스펙트럼과 비교하였으며, 필터의 광학적, 구조적, 전기적 특성들을 조사하였다. Ag 박막의 두께는 전기전도성을 높이기 위해 13㎚ 이상으로 증착하고, $TiO_{2}$박막은 가시광선 영역에서 투과율이 최대가 되는 24㎚로 증착하였다. 또한 Ag 박막의 산화를 막기 위해 매우 얇은 Ti 산화방지막을 증착하였으며, 다층구조로 갈수록 산화방지막의 두께를 더 두껍게 증착해야 하는 것을 확인하였다. 최종적으로 [$TiO_{2}$|Ti|Ag|$TiO_{2}$] 기본구조를 3번 반복하여 증착한 필터는 근적외선 차단 효과가 우수하고, 전자파 장해(electromagnetic interference; EMI)를 효과적으로 방지할 수 있는 2Ω/□ 이하의 낮은 면저항을 보였다.

• 한국진공학회지
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• 제19권4호
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• pp.275-280
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• 2010

MOCVD (Metal-Organic Chemical Vapor Deposition) 장비를 사용하여 BZO (boron doped zinc oxide, ZnO:B) 박막을 증착하고 수소 플라즈마 처리공정을 진행하였다. 본 연구는 수소 플라즈마 처리된 BZO 박막에 산소 플라즈마 재처리를 진행하여 BZO 박막의 특성 변화를 분석하였다. 그 결과 BZO 박막 성장은 (100), (101), (110)을 확인하였고, 산소 플라즈마 재처리에 의하여 일함수와 표면 저항이 증가하였다. 수소 플라즈마 처리만을 진행한 BZO 박막과 산소 플라즈마 재처리 공정을 진행한 BZO 박막의 300~1,100 nm에서 가중치 투과율은 86%로 변화하지 않았으며, 가중치 산란도는 12%에서 15%로 증가하였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.56-56
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• 2018

Transparent conductive oxides (TCOs) have attracted attention due to their high electrical conductivity and optical transparency in the visible region. Consequently, TCOs have been widely used as electrode materials in various electronic devices such as flat panel displays and solar cells. Previous studies on TCOs focused on their electrical and optical performances; there have been numerous attempts to improve these properties, such as chemical doping and crystallinity enhancement. Recently, due to rapidly increasing demand for flexible electronics, the academic interest in the mechanical stability of materials has come to the fore as a major issue. In particular, long-term stability under bending is a crucial requirement for flexible electrodes; however, research on this feature is still in the nascent stage. Hydrogen-incorporated amorphous In-Sn-O (a-ITO) thin films were fabricated by introducing hydrogen gas during deposition. The hydrogen concentration in the film was determined by secondary ion mass spectrometry and was found to vary from $4.7{\times}10^{20}$ to $8.1{\times}10^{20}cm^{-3}$ with increasing $H_2$ flow rate. The mechanical stability of the a-ITO thin films dramatically improved because of hydrogen incorporation, without any observable degradation in their electrical or optical properties. With increasing hydrogen concentration, the compressive residual stress gradually decreased and the subgap absorption at around 3.1 eV was suppressed. Considering that the residual stress and subgap absorption mainly originated from defects, hydrogen may be a promising candidate for defect passivation in flexible electronics.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1352-1354
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• 1997

Transparent conductive thin films have found many application in many active and passive electronic and opto-electronic devices as like flat Panel display electrode and window heat mirror, etc. Low resistivity and high transmittance of this films can be obtained by controlling deposition parameters, which are oxygen partial Pressure, substrate temperature and dopant concentration. In this study, We prepared non-stoichiometric and Sb-doped thin films of tin dioxide by reactive DC magnetron sputtering technology. The lowest resistivity of about $3.0{\times}10^{-3}\;{\Omega}cm$ and 80% transmittance in the visible light region have heed obtained at optimal deposition condition.

• 한국진공학회지
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• 제21권1호
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• pp.17-21
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• 2012

투명전도산화막인 Ga-도핑된 ZnO (GZO) 박막을 RF 마그네트론 스퍼터링 증착법을 이용하여 증착하고 전기적, 광학적 특성을 연구하였다. 증착변수로 공정압력에 변수를 주었으며 공정 압력 변화에 따라 전기적 특성과 광학적 특성이 달라짐을 확인할 수 있었다. 모든 박막은 공정압력에 상관없이 c-축(002) 방향성을 나타냈다. 증착된 GZO 박막의 전기저항성은 $8.68{\times}10^{-3}{\Omega}{\cdot}cm\sim2.18{\times}10^{-3}{\Omega}{\cdot}cm$이었고, 모든 가시광 영역에서 90% 이상의 평균 투과율을 보였다. 공정압력에 따라 상온에서 증착된 GZO 박막은 우수한 낮은 저항성과 높은 투과율을 나타내었고, 평판디스플레이와 태양전지의 투명전극으로 응용되기에 적합한 특성을 지닌 것을 확인 할 수 있었다.

• 한국전기전자재료학회논문지
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• 제15권1호
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• pp.61-66
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• 2002

A method for designing antireflection (AR) and antistatic (AS) coating layer by the use of conducting polymer as an electrically conductive transparent layer is proposed. The conducting AR coating is composed of four-layer with alternating high and low refractive index layer: silicon dioxide (n=1.44) and titanium dioxide (n=2.02) prepared at low temperature by sol-gel method are used as the low and high refractive index layer, respectively. The poly(3,4-ethylenedioxythiophene) which has the surface resistivity of 10$^4$Ω/$\square$ is used as a conductive layer. Optical constant of each ARAS coating layers such as refractive index and optical thickness were measured by 7he spectroscopic ellipsometer and from the measured optical constants the spectral properties such as reflectance and transmittance were simulated in the risible region. The reflectance of ARAS films on glass substrate was below 1 %R and the transmittance was higher than 95 % in the visible wavelength (400-700 nm). The measured AR spectral properties was very similar to its simulated results.

• 한국진공학회지
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• 제18권3호
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• pp.213-220
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• 2009

Al이 도핑된 투명 전도성 Al:ZnO (AZO) 박막에 대한 RF magnetron sputtering 증착 법을 이용한 저온 최적공정조건을 연구하였다. 투명전극 재료로써의 AZO 박막의 전기적, 결정학적 물성을 최대한 향상시키기 위해서, in-situ상태에서 유리기판상에 최적화된 증착 조건의 AZO 버퍼 층을 삽입하는 이중박막 구조를 제작하였다. RF 인가 전력 $50{\sim}60\;W$에서 증착된 버퍼층 위에 120 W의 RF 전력에서 성장한 AZO 박막의 경우, 비저항 $3.9{\times}10^{-4}{\Omega}cm$, 전하 캐리어농도 $1.22{\times}10^{21}/cm^3$, 홀 이동도 $9.9\;cm^2/Vs$의 전기적 특성을 보였다. 이러한 결과는 버퍼 층이 없는 기존의 단일 구조와 비슷하나, 전기적 비저항 특성을 약 30% 정도 향상시킬 수 있었으며, 전기적 특성의 향상 원인을 $Ar^+$ 이온의 입사 에너지의 변화에 따른 버퍼 층의 압축응력과 결정화 정도와의 의존성으로 설명하였다.