• Journal of Electrical Engineering and Technology
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• 제6권5호
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• pp.684-687
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• 2011

In this study, we investigate the photovoltaic performance of transparent conductive indium tin oxide (ITO), titanium-doped indium oxide (ITiO), and fluorine-doped tin oxide (FTO) films. ITO and ITiO films are prepared by radio frequency magnetron sputtering on soda-lime glass substrate at $300^{\circ}C$, and the FTO film used is a commercial product. We measure the X-ray diffraction patterns, AFM micrographs, transmittance, sheet resistances after heat treatment, and transparent conductive characteristics of each film. The value of electrical resistivity and optical transmittance of the ITiO films was $4.15{\times}10^{-4}\;{\Omega}-cm$. The near-infrared ray transmittance of ITiO is the highest for wavelengths over 1,000 nm, which can increase dye sensitization compared to ITO and FTO. The photoconversion efficiency (${\eta}$) of the dye-sensitized solar cell (DSC) sample using ITiO was 5.64%, whereas it was 2.73% and 6.47% for DSC samples with ITO and FTO, respectively, both at 100 mW/$cm^2$ light intensity.

• 공업화학
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• 제21권2호
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• pp.224-229
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• 2010

Transparent conducting oxide (TCO) 박막은 평판 디스플레이 산업에 널리 사용되고 있다. 화학적으로 우수한 투명전도성 Indium Zinc Oxide (IZO) 필름은 Indium Tin Oxide (ITO) 필름의 대체 물질로 관심을 끌고 있다. 본 연구에서는 90 : 10 wt%의 $In_2O_3$와 ZnO를 혼합하여 만든 타겟으로 전자빔 증착법을 이용하여 polynorbornene (PNB) 기판 위에 IZO 박막을 제조하였다. UV/Visible spectrophotometer, 4-Point Probe를 이용하여 증착 두께와 산소도입 속도에 따른 IZO 필름의 전기적 및 광학적 특성을 연구하였으며, SEM, XRD 및 XPS를 이용하여 증착된 IZO의 구조적 특성 및 표면조성비를 연구하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.77-77
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• 2007

The development of next generation displays such as flexible display is a major challenge. Most materials and processes in current flat panel display industry cannot be transferred to flexible substrates. Typically, indium tin oxide (ITO) thin films are brittle and need to be deposited at high temperature to achieve an optimal opto-electrical property, therefore ITO films cannot be used as a flexible electrode. Up to date, many alternative materials to ITO have been proposed such as conductive polymers, nanometals, solution deposited transparent conductive oxide(TCO) and carbon nanotubes(CNTs). CNT based transparent conductive films are fabricated on glass and polymer substrates. CNT thin films exhibit a sheet resistance ($R_s$) of nearby $10^3\;{\Omega}/sq$ with a transmittance of around 80% on the visible light range, which is attributed by excellent dispersion and interaction among CNTs, solvents and polymeric binders. This talk will present the current studies, opto-electrical properties, design criteria and its applications for CNT-based transparent conductive films.

• 한국전기전자재료학회논문지
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• 제27권3호
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• pp.146-150
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• 2014

As a method of simple patterning of transparent conductive oxide (TCO) films deposited on flexible substrates, laser direct etching was carried out on TCO films sputtered on polycarbonate (PC) substrates. As a result of different binding energies in TCO films, indium tin oxide (ITO) and indium gallium zinc oxide (IGZO) were more easily etched than zinc oxide with different $Nd:YVO_4$ laser beam conditions.

• Transactions on Electrical and Electronic Materials
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• 제13권5호
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• pp.241-244
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• 2012

Antimony doped tin oxide (ATO) thin films on glass substrate were prepared by the chemical solution deposition (CSD) method, using sol-gel solution synthesized by non-alkoxide precursors and the sol-gel route. The crystallinity and electrical properties of ATO thin films were investigated as a function of the annealing condition (both annealing environments and temperatures), and antimony (Sb) doping concentration. Electrical resistivity, carrier concentration, Hall mobility and optical transmittance of ATO thin films were improved by Sb doping up to 5~8 mol% and annealing in a low vacuum atmosphere, compared to the undoped tin oxide counterpart. 5 mol% Sb doped ATO film annealed at $550^{\circ}C$ in a low vacuum atmosphere showed the highest electrical properties, with electrical resistivity of about $8{\sim}10{\times}10^{-3}{\Omega}{\cdot}cm$, and optical transmittance of ~85% in the visible range. Our research demonstrates the feasibility of low-cost solution-processed transparent conductive oxide thin films, by controlling the appropriate doping concentration and annealing conditions.

• 한국표면공학회지
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• 제42권3호
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• pp.128-132
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• 2009

Transparent conducting thin films of indium tin oxide(ITO) co-sputtered with aluminum-doped zinc oxide(AZO) were deposited on glass substrate by dual magnetron sputtering. It was found that the electrical properties and structural characteristics of the films are significantly changed according to the sputtering power of the AZO target. The IAZTO film prepared with D.C power of ITO at 100 W and R.F power of AZO at 50 W shows an electrical resistivity of $4.6{\times}10^{-4}{\Omega}{\cdot}cm$ and a sheet resistance of $30{\Omega}/{\square}$ (for 150 nm thick). Besides of the improvement of the electrical properties, compared to the ITO films deposited at the same process conditions, the IAZTO films have very smooth surface, which is due to the amorphous nature of the films. However, the electrical conductivity of the IAZTO films was found to be deteriorated along with the crystallization in case of the high temperature deposition (above $310^{\circ}C$). In this work, high quality amorphous transparent conductive oxide layers could be obtained by mixing AZO with ITO, indicating possible use of IAZTO films as the transparent electrodes in OLED and flexible display devices.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.209-209
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• 2012

High-efficient transparent conductive oxide (TCO) film-embedding Si heterojunction solar cells were fabricated. An additional doping was not applied for heterojunction solar cells due to the spontaneous junction formation between TCO films and an n-type Si substrate. Three different TCO coatings were formed by sputtering method for an Al-doped ZnO (AZO) film, an indium-tin-oxide (ITO) film and double stacks of ITO/AZO films. An improved crystalline ITO film was grown on an AZO template upon hetero-epitaxial growth. This double TCO films-embedding Si heterojunction solar cell provided significantly enhanced efficiency of 9.23% as compared to the single TCO/Si devices. The effective arrangement of TCO films (ITO/AZO) provides benefits of a lower front contact resistance and a smaller band offset to Si leading enhanced photovoltaic performances. This demonstrates a potential scheme of the effective TCO film-embedding heterojunction Si solar cells.

• 공업화학
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• 제20권6호
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• pp.612-616
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• 2009

Transparent conducting oxide (TCO) 박막은 평판 디스플레이 산업에 널리 사용되고 있다. 화학적으로 우수한 투명전도성 indium zinc oxide (IZO) 필름은 현재 널리 사용되고 있는 indium tin oxide (ITO) 필름의 대체 물질로 관심을 끌고있다. 본 연구에서는 ITO에 비해 낮은 증착 온도에서도 낮은 비저항과 높은 투과율을 가지는 IZO 박막을 전자빔 증착법을 사용하여 polynorbornene (PNB) 기판(Tg = $330^{\circ}C$) 위에 증착하는 조건에 대하여 연구하였다. 90 : 10 wt%의 $In_2O_3$와 ZnO를 혼합하여 만든 타겟으로 전자빔 증착법을 이용하여 PNB 기판 위에 IZO 박막을 제조하여, 기판온도와 산소도입 속도에 따른 IZO 필름의 전기 광학적 특성을 연구하였다. 그 결과 4 sccm의 $O_2$, $150^{\circ}C$의 기판온도, 증착속도 $2{\AA}$/sec 및 $1000{\AA}$ 두께로 증착된 IZO 필름에서 우수한 전기 광학적 성질인 $5.446{\times}10^2{\Omega}/{\boxempty}$ 면저항 및 87.4% 광투과율을 얻을 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.510-514
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• 1997

The thin film that is electrically conductive and optically transparent is called conductive transparent thin film. ITO(Indium-Tin Oxide) which is a kind of conductive transparent thin film has been widely used in solar cell, transparent electrical heater, selective optical filter, FDP(Flat Display Panel) such as LCD(Liquid Crystal Display), PDP(Plasma Display Panel) and so on. Especially in PDP, ITO films is used as a transparent electrode in order to maintain discharge and decrease consumption power through the improvement of cell structure. In this study, we prepared ITO by reactive r.f. sputtering with indium-tin(Sn 10wt%) alloy target instead of indium-tin oxide target. The ITO films deposited at low temperature 15$0^{\circ}C$ and 8% $O_2$. Partial pressure showed about 3.6 Ω/$\square$. At the end of firing, the resistance of ITO was decreased, the optical transparence was improved above 90%.

• 한국진공학회지
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• 제17권1호
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• pp.73-79
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• 2008

투명 전도성 산화물 전극(transparent conductive oxide electrodes)에 적용하기 위하여 RF 마그네트론 스퍼터링 방법에 의해 유리 기판 위에 산화아연 박막을 증착하였다. 투명 전극으로써 응용되기 위한 최적의 조건으로 기판온도를 상온으로 유지하고 RF power 200 W, 타겟과 기판사이의 거리(Dts)가 30 mm일 때 증착된 산화아연 박막으로부터 가장 낮은 비 저항값($7.4{\times}10^{-3}{\Omega}cm$)을 얻어 낼 수 있었으며, 85% 이상의 높은 투과율을 만족하는 박막을 얻을 수 있었다. 실질적인 소자로써의 응용을 위해 photo lithography를 통한 pattern을 형성, 습식 식각을 통하여 그 특성을 알아보고자 하였다. 습식 식각에서 사용된 식각용액(etchant)으로는 다양한 산 용액(황산, 옥살산, 인산)을 사용하였으며, 산의 농도 변화에 따른 식각특성과 식각시간 및 식각 이미지(표면형상)의 변화를 알아보았다. 결과적으로 산화아연의 습식식각은 산의 종류와 무관하게 산 용액의 농도(즉, pH)에 크게 의존하며, pH가 증가함에 따라 식각율이 지수함수적으로 감소하고 아울러 다양한 식각 이미지가 나타남을 최초로 고찰할 수 있었다.