• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1101-1104
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• 2008

We have fabricated the transparent TFTs using new oxide material (AZTO: Al-doped zinc tin oxide) as an active layer. The AZTO TFT showed good performance without post-annealing. The electrical characteristics were improved by the post-annealing up to $300^{\circ}C$. The AZTO TFTs exhibited a mobility of $8{\sim}12\;cm^2/Vs$, a sub-threshold swing of 0.2~0.6 V/dec, and an on/off ratio of more than $10^9$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.7
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• pp.433-438
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• 2015

Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated by using $n^+$ Si wafers as gate electrodes. Indium (In), aluminum (Al), indium tin oxide (ITO), silver (Ag), and gold (Au) were employed for source and drain electrodes, and the mobility and the threshold voltage of ZTO TTFTs were observed as a function of electrode. The ZTO TTFTs adopting In as electrodes showed the highest mobility and the lowest threshold voltage. It was shown that Ag and Au are not suitable for the electrodes of ZTO TTFTs. As the results of this study, it is considered that the interface properties of electrode/ZTO are more influential in the properties of ZTO TTFTs than the conductivity of electrode.

• ETRI Journal
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• v.31 no.1
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• pp.62-64
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• 2009

We report on the bias stability characteristics of transparent ZnO thin film transistors (TFTs) under visible light illumination. The transfer curve shows virtually no change under positive gate bias stress with light illumination, while it shows dramatic negative shifts under negative gate bias stress. The major mechanism of the bias stability under visible illumination of our ZnO TFTs is thought to be the charge trapping of photo-generated holes at the gate insulator and/or insulator/channel interface.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.201-201
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• 2012

Using materials with high thermal conductivity is a matter of great concern in the field of thermal management. In this study, we present our experimental results on an important physical property of carbon nanotube (CNT) films, two-dimensional thermal conductivity obtained by using an optical method based on Raman spectroscopy. We prepared four kinds of CNT films to investigate the effect of CNT type on heat spreading performance of films. This first comparative study using the optical method shows that the arc-discharge single-walled carbon nanotubes yield the best heat spreading film. And we observed thermal conductivity values of CNT films with various transmittances and found that the Raman method works as long as the sample is a transparent film. This study provides useful information on characterization of thermal conduction in transparent CNT films and could be an important step toward high-performance carbon-based heat spreading films.

• Journal of the Korean Ceramic Society
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• v.50 no.5
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• pp.309-318
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• 2013

Graphene has attracted considerable attention since its first production from graphite in 2004, due to its outstanding physical and chemical properties. The development of production methodsfor large scale, high quality graphene films is an essentialstep toward realizing graphene applications such as transparent, conductive film. Chemical deposition methods, using metal catalystsand gaseous carbon sources, have been extensively developed for large area synthesis. In this paper, wereview recent progress ingraphene production, and survey the role of graphene electrodes in various electronic devices such as touch panels, solar cells, solid statelighting and microelectronic devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.525-528
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• 2001

ZnO:Al thin film can be used as a transparent conducting oxide(TCO) which has low electric resistivity and high optical transmittance for the front electrode of amorphous silicon solar cells and display devices. This study of electrical, crystallographic and optical properties of Al doped ZnO thin films prepared by Facing Targets Sputtering (FTS), where strong internal magnets were contained in target holders to confine the plasma between the targets, is described. Optimal transmittance and resistivity was obtained by controlling flow rate of O$_2$ gas and substrate temperature. When the of gas rate of 0.3 and substrate temperature 200$^{\circ}C$ , ZnO:Al thin film had strongly oriented c-axis and lower resistivity(<10$\^$-4/Ω-cm).

• Journal of the Korean Solar Energy Society
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• v.28 no.2
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• pp.58-63
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• 2008

This study has analysed power output characteristics of transparent thin-film PV module depending on incidence angle and azimuth. The experiment results showed power outputs of transparent thin-film PV module applied to full-scale mock up model on slope of $90^{\circ},\;30^{\circ},\;0^{\circ}$ to the south. The simulation results was evaluated power outputs of transparent thin-film PV module depending on incidence angle and azimuth after calibrating the experimental and computed data. As a result. the best power output performance of transparent thin-film PV module was obtained at slope of $30^{\circ}$ to the south, producing the annual power output of 977kWh/kWp. The annual power output data demonstrated that the PV module with a slope of $30^{\circ}$ could produce a 68 % higher power output than that with a slope of $90^{\circ}$ with respect to the inclined slope of the module, Furthermore, the PV module facing south showed a 22 % higher power output than that facing to the east in terms of the angle of the azimuth, Specipically. the varying power output with incidence angle of PV module can be resulted from the influence of incidence angle modifier of glass on PV module. That is, the solar energy transmission can be reduced as an increase of incidence angle of PV module. Therefore, when the inclined slope of the PV module was over $70^{\circ}$ there was a significant reduction of power output, and this was caused by the decrease of solar energy transmission in the transparent thin-film PV module.

• Membrane Journal
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• v.33 no.5
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• pp.248-256
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• 2023

Indium tin oxide (ITO) transparent electrode film has been widely adopted for the various applications such as display and electric vehicle. In this paper, we studied how to enhance the thermoforming stability of ITO film by applying the highly conductive Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) thin layer. Based on the change of sheet resistance value, the influence of the additional solvent with different boiling point was investigated for the PEDOT:PSS coating solution. In addition, by analyzing optical transmittance and Raman spectrum, we confirmed the key mechanism which determine the final electrical conductivity of the PEDOT:PSS on ITO film using an ethylene glycol solvent. The final ITO transparent electrode coated with PEDOT:PSS performed the outstanding endurance of electrical conduction even in 126% stretching condition.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1276-1279
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• 2005

The long-term stability of pentacene thin-film transistors (TFTs) encapsulated with a transparent $SnO_2$ thin-film prepared by ion beam assisted deposition (IBAD) was investigated. With a buffer layer of thermally evaporated 100 nm $SnO_2$ film deposited prior to IBAD process, our encapsulated OTFTs sustained its initial field-effect mobility up to one month and then gradually degraded showing only 37% reduction compared to 90% reduction of non-encapsulated OTFTs after 100 days in air ambient. The encapsulated OTFTs also exhibited superior on/off current ratio of over $10^5$ to that of the unprotected devices $({\sim}10^4)$ which was reduced from ${\sim}10^6$ before aging. Therefore, the enhanced long-term stability of our encapsulated OTFTs should be attributed to well protection of permeation of $H_2O$ and $O_2$ into the devices by the IBAD $SnO_2$ thin-film which could be used as an effective inorganic gas barrier for transparent organic electronic devices.

• Journal of the Korean Graphic Arts Communication Society
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• v.24 no.2
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• pp.49-59
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• 2006

In this paper, a transparent film exposed the effect of heat cut-off, reveal as means of the prevention to wrong operation of parts of display and forgery of the credit card, also it will intercept rising of the temperature in interior of a room and car by diminish the influx of near-infrared ray wavelength of solar energy come from the window. As in the past a film which absorb a wavelength of $800{\sim}2500nm$ in near-infrared ray, manufactured in physical vapor deposition(PVD), chemical vapor deposition(CVD) to using ATO, ITO of inorganic materials or sputtering method. but it has lots of problem in manufacture. On the other hand, recently a paper said it easily form a transparent film to using organic dye. This paper show synthesis of many derivatives used in Ni-complex and then it investigate to optical property and durability of flim by make the transparent film.