• 마이크로전자및패키징학회지
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• 제21권4호
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• pp.15-24
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• 2014

Recently, a variety of printing technologies, including ink jet, gravure, and roll-to-roll (R2R) printing, has generated intensive interest in the application of flexible and wearable electronic devices. However, the actual use of printing technique is much limited because the sintering process of the printed nanoparticle inks remains as a huge practical drawback. In the fabrication of the conductive metal film, a post-sintering process is required to achieve high conductivity of the printed film. The conventional thermal sintering takes considerable sintering times, and requires high temperatures. For application to flexible devices, the sintering temperature should be as low as possible to minimize the damage of polymer substrate. Several alternative sintering methods were suggested, such as laser, halogen lamp, infrared, plasma, ohmic, microwave, and etc. Eventually, the new sintering technique should be applicable to large area, R2R, and polymer substrate as well as low cost. This article reviews progress in recent technologies for several sintering methods. The advantages and disadvantages of each technology will be reviewed. Several issues for the application in R2R process are discussed.

• 한국전기전자재료학회논문지
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• 제25권1호
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• pp.44-47
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• 2012

The $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ multi layered structure was designed for the possible application of transparent electrodes in PDP (Plasma Display Panel). Multi layered film was deposited on a glass substrate at room temperature by DC/RF magnetron sputtering system and EMP (Essential Macleod Program) was adopted to optimize the optical characteristics of film. During the deposition process, the Ag layer in $TiO_2/Ag/TiO_2$ became heavily oxidized and the filter characteristic was degraded easily. In thus study, Si3N4 layer was used as a diffusion buffer layer between $TiO_2$ and Ag. in order to prevent the oxidation of Ag layer in $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ structure. It was confirmed that $Si_3N_4$ layer is one of candidate materials acting as diffusin barrier between $TiO_2/Ag/TiO_2$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.208-208
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• 2010

Zinc oxide (ZnO) is a functional material with interesting optical and electrical properties, a wide band gap (more than 3.3 eV), a high transmittance in the visible light region, piezoelectric properties, and a high n-type conductivity. This material has been investigated for use in many applications, such as transparent electrodes, blue light-emitting diodes, and ultra-violet detector. ZnO films grown under low oxygen pressure by thin film deposition methods show low resistivity and large free electron concentration. Therefore, reducing the background carrier concentration in ZnO films is one of the major challenges ahead of realizing high-performance ZnO-based optoelectronic devices. In this study, we deposited ZnO thin films on sapphire substrates by pulsed laser deposition (PLD) with employing an oxygen plasma source to decrease the background free-electron concentration and enhance the crystalline quality. Then, the substrate temperature was varied between 200 'C to 900 'C The vacuum chamber was initially evacuated to a pressure of $10^{-6}$ Torr, and then a pure $O_2$ gas was introduced into the chamber and the pressure during deposition was maintained at $10^{-2}$ Torr. Crystallinity and orientation of ZnO films were investigated by X-ray diffraction (XRD). The film surface was analyzed with atomic force microscope (AFM). And electrical properties were measured at room temperature by Hall measurement.

• 한국전기전자재료학회논문지
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• 제18권6호
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• pp.571-575
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• 2005

In order to improve the efficiency of dye-sensitized solar cell (DSSC), $TiO_2$ electrode screen-printed on transparent conducting oxide (TCO) substrate was sintered in variation with different temperature$(350\;to\;550^{\circ}C)$. $TiO_2$ electrode on fluorine doped tin oxide (FTO) glass was assembled with Pt counter electrode on FTO glass. I-V properties of DSSCs were measured under solar simulator. Also, effect of sintering temperature on surface morphology of $TiO_2$ films was investigated to understand correlation between its surface morphology and sintering temperature. Such surface morphology was observed by atomic force microscopy (AFM). Below sintering temperature of $500^{\circ}C$, efficiency of DSSCs was relatively lower due to lower open circuit voltage. Oppositely, above sintering temperature of $500^{\circ}C$, efficiency of DSSCs was relatively higher due to higher open circuit voltage. In both cases, lower fill factor (FF) was observed. However, at sintering temperature of $500^{\circ}C$, both efficiency and fill factor of DSSCs were mutually complementary, enhancing highest fill factor and efficiency. Such results can be explained in comparison of surface morphology with schematic diagram of energy states on the $TiO_2$ electrode surface. Consequently, it was considered that optimum sintering temperature of a-terpinol included $TiO_2$ paste is at $500^{\circ}C$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.106-106
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• 2011

Recently, zinc oxide (ZnO) thin films have attracted great attention as a promising candidate for various electronic applications such as transparent electrodes, thin film transistors, and optoelectronic devices. ZnO thin films have a wide band gap energy of 3.37 eV and transparency in visible region. Moreover, ZnO thin films can be deposited in a poly-crystalline form even at room temperature, extending the choice of substrates including even plastics. Therefore, it is possible to realize thin film transistors by using ZnO thin films as the active channel layer. In this work, we investigated influence of oxygen partial pressure on ZnO thin films and fabricated ZnO-based thin film transistors. ZnO thin films were deposited on glass substrates by using a pulsed laser deposition technique in various oxygen partial pressures from 20 to 100 mTorr at room temperature. X-ray diffraction (XRD), transmission line method (TLM), and UV-Vis spectroscopy were employed to study the structural, electrical, and optical properties of the ZnO thin films. As a result, 80 mTorr was optimal condition for active layer of thin film transistors, since the active layer of thin film transistors needs high resistivity to achieve low off-current and high on-off ratio. The fabricated ZnO-based thin film transistors operated in the enhancement mode with high field effect mobility and low threshold voltage.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.341-341
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• 2012

Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.82-82
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• 2018

광전소자용 투명전극으로 적용하기 위한 초박형 Al 박막에 대해서 기초연구를 수행하였다. 증착 전 챔버(chamber) 내 기저압력은 $3{\times}10^{-7}Torr$이하로 유지하였으며 Ar 불활성 기체의 유입을 통해 작업압력을 $1{\times}10^{-2}Torr$로 상승시켜 증착을 실시하였다. DC 마그네트론 스퍼터링법을 이용하여 유리기판상에 Al 박막의 증착을 실시하였으며, 박막의 두께가 3-12 nm인 Al 박막을 각각 형성하였다. 두께가 7 nm 일 때 면저항은 $135{\Omega}/{\square}$로 측정되었고 7 nm 이상인 두께의 박막은 두께가 증가할 때 면저항이 점진적으로 감소되는 경향을 확인할 수 있었다. 두께가 10 nm인 박막의 측정된 면저항은 $13.1{\Omega}/{\square}$로 두께 7 nm인 박막과 비교하였을 때 약 10배의 차이를 확인할 수 있었다. 두께 6 nm 이하인 박막은 면저항 측정이 불가능하였는데 이는 SEM 분석 결과, 연속박막을 이루지 못 하였기 때문이라고 결론을 내릴 수 있었으며, 두께 12 nm인 박막까지 완전한 연속박막이 형성되지 않았다. 각각의 박막에서 입자의 크기는 선 교차법(line intercept method)을 이용하여 시편당 평균 120개의 입자에 대한 평균값을 측정하였으며, 이론적으로 예상할 수 있는 바와 같이 두께가 증가할수록 입자크기도 비례하여 증가하게 되는 것을 확인할 수 있었다. 가시광선 파장영역 내 투과도의 경우, 3 nm 두께에서 평균 80% 이상의 투과도가 측정된 데 반하여, 4-5 nm 두께에서 평균 60%로 급격하게 감소되기 시작하며 그 이후, 두께 증가에 따라 투과도가 점진적으로 감소되는 경향을 확인할 수 있었다. 또한 Al 박막은 시간의 경과에 따른 표면의 산화가 진행되어 기존에 측정된 면저항보다 10-60%의 면저항이 증가하였는데 이는 두께가 얇을수록 더 산화의 영향을 많이 받기 때문에 나타난 결과로 보인다. 추후 산화방지막 및 빛반사방지막 층을 초박형 Al박막과 함께 Oxide/Metal/Oxide 구조로 형성하여 위와 같은 현상들을 해결하고 박막물성의 증진을 통해 투명전극에 적용을 목표로 한다.

• 대한의용생체공학회:의공학회지
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• 제36권6호
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• pp.283-290
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• 2015

We proposed blink based online speller for the locked-in syndrome (LIS) patients, paralyzed in nearly all voluntary muscles expect for the eyes, with a simple and easy-to-use eye blink detection glasses. Electrooculogram (EOG) is the golden standard method of eye movement or blink measurement with Ag/AgCl electrodes. However, this method has several drawbacks such as skin irritation and dehydration of conductive gel. To resolve the shortcomings, we used a blink detection system based on a transparent capacitively coupled electrode, which is conductive indium tin oxide (ITO) films. The films make it possible to measure eye blink without direct skin contact and obstruction of field of view. We finally developed user-friendly blink based online speller with the blink detection system. To classify voluntary and non-voluntary blink, we used the double blink for command of the speller. The online speller experiment result with six healthy subjects shows that mean accuracy is 98.96% and letter per minute (LPM) is 4.73, which are better result by comparison with conventional P300 or auditory brain-computer interface (BCI) paradigm. The result of the experiment demonstrates the possibility of applying the proposed system as a communication method for the LIS patients.

• 전기전자학회논문지
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• 제24권1호
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• pp.59-66
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• 2020

최근 휴대용 통신기기와 스마트 디스플레이의 결합은 휴대가 용이하고 이동을 하면서 모든 작업을 할 수 있다. 이에 본 논문에서는 휴대용 통신기기에서 저가격의 높은 투명전극을 찾기 위해 여러 가지 ITO(Indium Tin Oxide) 박막에 대해 연구하였다. ITO 박막은 DC 마그네트론 스펏터를 사용하였으며 1 분위기압을 1mTorr 증가 간격으로, 2 바이어스 전압은 10V 간격으로 변화시켜 측정하였다. 두께와 굴절율은 일립소미터를 사용하였으며 막의 단면과 표면의 형상은 주사전자현미경을 사용하여 조사하였다. 분석 결과를 통해 바이어스 전압이 300V 이상일 경우에 명확한 증착이 나타났으며 추가로 전압이 증가함에 따라 전체적으로 증착률이 증가하였다. 330V 조건에서 증착률이 가장 높았으며 뚜렷한 결정립이 관찰되었다.

• 한국전기전자재료학회논문지
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• 제24권4호
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• pp.303-308
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• 2011

The Gallium-doped ZnO(GZO) film deposited at a temperature of $200^{\circ}C$ and a pressure of 10 mtorr has an optical transmittance of 89.0% and a resistivity of $2.0\;m{\Omega}{\cdot}cm$ because of its high crystallinity. Effect of $Al_2O_3$ oxide buffer layers on the optical and electrical properties of sputtered ZnO films were intensively investigated for developing the electrodes of opto-electronic devices which demanded high optical transmittance and low resistivity. The use of $Al_2O_3$ buffer layer could increase optical transmittance of GZO film to 90.7% at a wavelength of 550 nm by controlling optical spectrum. Resistivity of deposited GZO films were much dependent on the deposition condition of $O_2/(Ar+O_2)$ flow rate ratio during the buffer layer deposition. It is considered that the $Al_2O_3$ buffer layer could increase the carrier concentration of the GZO films by doping effect of diffused Al atoms through the rough interface.