Journal of IKEEE (전기전자학회논문지)

Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
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he deposition and analysis of ITO thin film by DC magnetron sputter at room temperature

DC 마그네트론 스펏터를 이용한 ITO 박막의 실온 증착 및 특성 분석

  • Kim, Howoon (Dept. of Aviations Information & Communication Engineering, Kyungwoon University) ;
  • Yun, Jung-Oh (Dept. of Aviations Information & Communication Engineering, Kyungwoon University)
  • Received : 2020.02.14
  • Accepted : 2020.03.25
  • Published : 2020.03.31
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Abstract

In this study, the characteristics of ITO thin film was investigated to finding a low cost and highly transparent electrodes for display of mobile communication devices. The ITO film was deposited by DC magnetron sputter. The experimental conditions were changed as follows: 1. ambient pressure changed 1 to 3 mTorr with 1mTorr step, 2. bias electric voltage changed with 10V step. The chamber was pumped out by rotary pump until 10-3Torr then the diffusion pump was used to lower the pressure of 10-6Torr. The results shows us the film growth was obvious when the bias voltage was larger than 300V, but the overall thickness tendency was existed: the more voltage is the thicker thickness. At 330V bias voltage condition, the deposition rate was the largest and apparent grain was showed.

최근 휴대용 통신기기와 스마트 디스플레이의 결합은 휴대가 용이하고 이동을 하면서 모든 작업을 할 수 있다. 이에 본 논문에서는 휴대용 통신기기에서 저가격의 높은 투명전극을 찾기 위해 여러 가지 ITO(Indium Tin Oxide) 박막에 대해 연구하였다. ITO 박막은 DC 마그네트론 스펏터를 사용하였으며 1 분위기압을 1mTorr 증가 간격으로, 2 바이어스 전압은 10V 간격으로 변화시켜 측정하였다. 두께와 굴절율은 일립소미터를 사용하였으며 막의 단면과 표면의 형상은 주사전자현미경을 사용하여 조사하였다. 분석 결과를 통해 바이어스 전압이 300V 이상일 경우에 명확한 증착이 나타났으며 추가로 전압이 증가함에 따라 전체적으로 증착률이 증가하였다. 330V 조건에서 증착률이 가장 높았으며 뚜렷한 결정립이 관찰되었다.

Keywords

References

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