• 한국신뢰성학회지:신뢰성응용연구
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• 제16권1호
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• pp.1-6
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• 2016

Purpose: Fluorine doped tin oxide (FTO) bottom electrode for $Ta_2O_5$ based RRAM was studied to apply for transparent resistive switching memory devices owing to its superior transparency, good conductivity and chemical stability. Methods: $ITO/Ta_2O_5/FTO$ (ITF) and $ITO/Ta_2O_5/Pt$ (ITP) devices were fabricated on glass and Si substrate, respectively. UV-visible (UV-VIS) spectroscopy was used to examine transparency of the ITF device and its band gap energy was determined by conventional Tauc plot. Electrical properties, such as electroforming and voltage-induced RS characteristics were measured and compared. Results: The device with an FTO bottom electrode showed good transparency (>80%), low forming voltage (~-2.5V), and reliable bipolar RS behavior. Whereas, the one with Pt electrode showed both bipolar and unipolar RS behaviors unstably with large forming voltage (~-6.5V). Conclusion: Transparent and conducting FTO can successfully realize a transparent RRAM device. It is concluded that FTO electrode may form a stable interface with $Ta_2O_5$ switching layer and plays as oxygen ion reservoir to supply oxygen vacancies, which eventually facilitates a stable operation of RRAM device.

• Journal of Information Display
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• 제9권3호
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• pp.8-11
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• 2008

A novel non-alkoxide sol-gel process for synthesizing Ga-doped ZnO thin film on glass was derived for possible use as a transparent electrode in flat-panel displays, using zinc acetate dehydrate as the starting material. The structural and electrical properties of thin films have been characterized as functions of Ga addition and post-heat-treatments. Their carrier density, Hall mobility, and optical transmittance were measured and discussed herein to explain the characteristics of the sol-gel-derived Ga-doped ZnO thin film on glass.

• 대한전기학회논문지
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• 제43권6호
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• pp.965-970
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• 1994

ZnO transparent conducting oxide thin films have been prepared by Pyrosol deposition method and the effects of the different experimental variables on the electrical resistivity and optical transmittance of the prepared films have been investigated in details. The best film with a resistivity of about 8 X 10S0-2TΩcm and transmittance about 80% has been obtained at the substrate temperature of 4$25^{\circ}C$ by using HS12T+CHS13TOH(1:3) solvent and NS12T carrier gas after annealing at 20$0^{\circ}C$ for 40 minutes in vacuum. Furthermore, We have also found the effect of substrate temperature on crystallographic orientation and surface morphology. Annealing of the as-deposited film in vacuum leads to a substantial reduction in resistivity without affecting the optical transmittance and crystallographic orientation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.525-528
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• 2001

ZnO:Al thin film can be used as a transparent conducting oxide(TCO) which has low electric resistivity and high optical transmittance for the front electrode of amorphous silicon solar cells and display devices. This study of electrical, crystallographic and optical properties of Al doped ZnO thin films prepared by Facing Targets Sputtering (FTS), where strong internal magnets were contained in target holders to confine the plasma between the targets, is described. Optimal transmittance and resistivity was obtained by controlling flow rate of O$_2$ gas and substrate temperature. When the of gas rate of 0.3 and substrate temperature 200$^{\circ}C$ , ZnO:Al thin film had strongly oriented c-axis and lower resistivity(<10$\^$-4/Ω-cm).

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.1948-1950
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• 2005

In the recent years, much interests and attraction has been paid on the plasma display panel. To achieve high performance display panel, there has been a strong demands for studies on the transparent conducting films such as ITO and ZnO. In this study, we propose PDP cell with ZnO transparent conducting electrode. The electrical and optical characteristics of PDP cell with ZnO transparent electrode were studied and compared with that of conventional ITO electrode.

• 한국전기전자재료학회논문지
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• 제30권11호
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• pp.740-744
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• 2017

Herein we studied the electrical and optical properties of indium tin oxide ITO/Ag/ITO multilayer thin films for application in transparent conducting electrodes. The ITO and Ag thin films were deposited onto soda lime glass (SLG) using radiofrequency and DC-sputtering methods, respectively. The as-synthesized ITO/Ag/ITO multilayer thin films were analyzed using 4-point probe, UV-Visible spectroscopy, and Hall measurement. We observed a rapid increase in electron concentration with increasing Ag thickness. However, electron mobility decreased with increasing Ag thickness. Finally, ITO/Ag/ITO multilayer thin films showed a characteristic low sheet resistance of $18{\Omega}/sq$ and high optical transmittance value (80%) with variation of Ag thickness (5~10 nm).

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2009년도 추계학술대회 논문집
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• pp.177-179
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• 2009

In order to investigate the possible application of ZnO films as a transparent conducting oxide (TCO) electrode, ZnO:Al films were prepared by RF magnetron sputtering method. The effects of surface treatment and doping concentration on the structural and electrical properties of ZnO films were mainly studied experimentally. Five-inch PDP cells using either a ZnO:Al or indium tin oxide (ITO) electrode were also fabricated separately under the same manufacturing conditions. The luminous properties of both the transparent conducting oxide electrode were measured and compared with each other. By doping the ZnO target with 2 wt% of Al2O3, the film deposited at a chemical surface treatment resulted in the minimum resistivity of 8.5 _ 10_4 U-cm and a transmittance of 91.7%. And DBD surface treatment resulted in the minimum resistivity of 8.5 _ 10_4 U-cm and a transmittance of 91.7%. Although the luminance and luminous efficiency of the transparent conducting oxide electrode using ZnO:AI are lower than those of the cell with the ITO electrode by about 10%, these values are sufficient enough to be considered for the normal operation of TCO.

• 한국전기전자재료학회논문지
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• 제26권4호
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• pp.289-293
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• 2013

We have studied structural, optical, and electrical properties of the Ga-doped ZnO (GZO) thin films being usable in transparent conducting oxides. The GZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering system. To find optimal properties of GZO for transparent conducting oxides, the Ar gas in sputtering process was varied as 40, 60, 80 and 100 sccm, respectively. As reaction gas decreased, the crystallinity of GZO thin film was increased, the optical bandgap of GZO thin film increased. The transmittance of the film was over 80% in the visible light range regardless of the changes in reaction gas. The measurement of Hall effect characterizes the whole thin film as n-type, and the electrical property was improved with decreasing reaction gas. The structural, optical, and electrical properties of the GZO thin films were affected by Ga dopant content in GZO thin film.

• 공업화학
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• 제9권2호
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• pp.214-219
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• 1998

초음파분무 열분해에 의하여 유리 기판 위에 투명전도성 산화주석막을 증착하였다. 증착변수가 산화주석막의 전기저항, 광투과도, 결정구조 및 두께에 미치는 영향을 조사하였다. 증착시간과 염화주석(IV)의 농도가 증가함에 따라, 증착된 산화주석막의 전기저항과 가시선 및 근적외선 영역에서의 광투과도가 감소함을 보여주었다. 공기중에서 열처리온도가 증가하면, 증착된 산화주석막은 전기저항과 광투과도가 증가함을 나타냈다. 본 연구결과는 초음파분무열분해가 단일과정으로서 양질의 투명전도막을 효율적으로 제조할 수 있는 유망한 증착기술임을 암시한다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.525-528
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• 2006

Transparent conducting films were fabricated on polyethylene terephthalate substrate by a spray method using double-walled carbon nanotubes dispersed in organic solvent and water-based solution. We analyzed the films by absorption spectra, sheet resistance, and scanning electron microscopy. Transparent conducting films with high uniformity and high transparency were fabricated by the spray method. We found that the dispersion particularly nanodispersion of CNTs was of crucial importance to improve the film performance.