• Journal of Broadcast Engineering
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• v.17 no.1
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• pp.152-164
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• 2012

DMB provides various kinds of data services such as BWS and TPEG service in addition to audio and video services. But recently the necessity of new business models creating profit has been on the rise due to the saturation of DMB receiver market and break-down of market barrier between mobile IPTV and DMB services. This paper introduces DMB filecasting service technology, which can be expected a new profit-creative business model. The purpose of DMB filecasting service is to transmit non-real time multimedia contents based on DMB AF format to the users through DMB channels. It makes possible to consume DMB contents with any DMB-installed device anytime, anywhere and share them with others. Also DMB filecasting service makes consumption and request of DMB contents possible to be extented to a variety of networks as well as DMB channels. The paper explains the standardization status of DMB filecasting service and various DMB filecasting service scenarios. And also it proposes a signalling methode, a transmission and reception protocol and a receiver structure using DMB broadcasting program guide information.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.1
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• pp.393-400
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• 2020

Unlike conventional radiographic examinations, angiointerventional procedures have a high risk of radiation exposure to patients or operators due to prolonged radiation exposure time. This study was undertaken to examine effects of reducing the radiation risk by applying dose reduction fiber (DRF) shielding cloth during angiography. To investigate the properties of DRF shielding cloth, we measured the scattered radiation below and above a human phantom using a glass dosimeter, at site distances 10 cm away from the irradiated field. The results obtained reveal a 15 ~ 31% reduction of scattered radiation in the irradiation field, and 53 ~ 70% reduced radiation measured after phantom transmission. Taken together, our data indicate that application of DRF shielding cloth for radiation reduction at non-procedural sites during interventional procedure results in reduction of scattered doses to patients and operators, without affecting the medical examinations. We propose the use of DRF shielding during angiointerventional procedures, in order to reduce the risk of radiation exposure of patients and operators.

• Journal of KIISE
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• v.42 no.1
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• pp.97-106
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• 2015

Recently, research on database encryption for data protection and query result authentication methods has been performed more actively in the database outsourcing environment. Existing database encryption schemes are vulnerable to order matching and counting attack of intruders who have background knowledge of the original database domain. Existing query result integrity auditing methods suffer from the transmission overhead of verification object. To resolve these problems, we propose a group-order preserving encryption index and a query result authentication method based on the encryption index. Our group-order preserving encryption index groups the original data for data encryption and support query processing without data decryption. We generate group ids by using the Hilbert-curve so that we can protect the group information while processing a query. Finally, our periodic function based data grouping and query result authentication scheme can reduce the data size of the query result verification. Through performance evaluation, we show that our method achieves better performance than an existing bucket-based verification scheme, it is 1.6 times faster in terms of query processing time and produces verification data that is 20 times smaller.

• Journal of the Korean Institute of Gas
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• v.6 no.1 s.17
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• pp.38-45
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• 2002

Hydrates are solid cryctallines resembling ice in appearance, which are consist of a gas molecule surrounded by a cage of water molecules. Because of containning a large amount of methane, hydrates have been considered as a future energy resource. However, the formation of hydrates in the oil and gas industries has been known as a serious problem for a long time. The formation of hydrate in pipeline is common in seasonally cold or sub-sea environments with low temperatures and high pressures. Especially, hydrate plug formation becomes a real menace to flow assurance in inadequately protected transmission lines. This study was carried out for the purpose of understanding mechanism of hydrate plugging and examining formation conditions of hydrate in high pressure gas pipeline. In this study, we measured hydrate equilibrium conditions under the various flowing conditions with the methane. The results were presented both the plugging tendency and the effect of flowing velocity.

• Korean Journal of Materials Research
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• v.27 no.12
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• pp.705-709
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• 2017

The electronic and optical characteristics of molybdenum disulphide ($MoS_2$) film significantly vary with its thickness, and thus a rapid and accurate estimation of the number of $MoS_2$ layers is critical in practical applications as well as in basic researches. Various existing methods are currently available for the thickness measurement, but each has drawbacks. Transmission electron microscopy allows actual counting of the $MoS_2$ layers, but is very complicated and requires destructive processing of the sample to the point where it will no longer be useable after characterization. Atomic force microscopy, particularly when operated in the tapping mode, is likewise time-consuming and suffers from certain anomalies caused by an improperly chosen set point, that is, free amplitude in air for the cantilever. Raman spectroscopy is a quick characterization method for identifying one to a few layers, but the laser irradiation causes structural degradation of the $MoS_2$. Optical microscopy works only when $MoS_2$ is on a silicon substrate covered with $SiO_2$ of 100~300 nm thickness. The last two optical methods are commonly limited in resolution to the micrometer range due to the diffraction limits of light. We report here a method of measuring the distribution of the number of $MoS_2$ layers using a low voltage field emission electron microscope with acceleration voltages no greater than 1 kV. We found a linear relationship between the FESEM contrast and the number of $MoS_2$ layers. This method can be used to characterize $MoS_2$ samples at nanometer-level spatial resolution, which is below the limits of other methods.

• Journal of the Korean Vacuum Society
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• v.20 no.6
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• pp.409-415
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• 2011

The method to improve the detection sensitivity of Hand-held XRF (X-Ray Fluorescence) device currently being developed is discussed. To minimize the loss of the intensity due to atmospheric gas molecules, the vacuum module, which can be filled with atmospheric or He gas, between the sample and the detector was installed. And the change of the detection sensitivity was measured in a vacuum and in the He gas-filled state. As a result, the following three important results were obtained; Firstly, XRF intensity was increased 2~4 times in the low energy range (3~4 keV). It is a very important result because the enhancement of the detection sensitivity means shortening of the detection time in Hand-held XRF device. Secondly, the possibility of detection of the elements less than 3 keV in emission energy was confirmed. Thirdly, the absorption by atmospheric gas molecules can be minimized without vacuum- sealed vessel in Hand-held XRF device, if the vacuum module filled with He gas is used. We concluded that all of three results are very meaningful in the development of a Hand-held XRF device.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.457-457
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• 2010

Flexible organic light emitting diodes (F-OLEDs) requires excellent moisture permeation barriers to minimize the degradation of the F-OLEDs device. Specifically, F-OLEDs device need a barrier layer that transmits less than $10^{-6}g/m^2/day$ of water and $10^{-5}g/m^2/day$ of oxygen. To increase the life time of F-OLEDs, therefore, it is indispensable to protect the organic materials from water and oxygen. Severe groups have reported on multi-layerd barriers consisting inorganic thin films deposited by plasma enhenced chemical deposition (PECVD) or sputtering. However, it is difficult to control the formation of granular-type morphology and microscopic pinholes in PECVD and sputtering. On the contrary, atomic layer deoposition (ALD) is free of pinhole, highly uniform, conformal films and show good step coverage. Thus, $Al_2O_3/TiO_2$ multi-layer was deposited onto the polyethersulfon (PES) substrate by electron cyclotron resonance atomic layer deposition (ECR-ALD), and the water vapor transmission rates (WVTR) were measured. WVTR of moisture permeation barriers is dependent upon density of films and initial state of polymer surface. A significant reduction of WVTR was achieved by increasing density of films and by applying low plasma induced interlayer on the PES substrate. In order to minimize damage of polymer surface, a 10 nm thick $TiO_2$ was deposited on PES prior to a $Al_2O_3$ ECR-ALD process. High quality barriers were developed from $Al_2O_3$ barriers on the $TiO_2$ interlayer. WVTR of $Al_2O_3$ by introducing $TiO_2$ interlayer was recorded in the range of $10^{-3}g/m^2.day$ at $38^{\circ}C$ and 100% relative humidity using a MOCON instrument. The WVTR was two orders of magnitude smaller than $Al_2O_3$ barriers directly grown on PES substrate without the $TiO_2$ interlayer. Thus, we can consider that the $Al_2O_3/TiO_2$ multi-layer passivation can be one of the most suitable F-OLEDs passivation films.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.276-276
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• 2010

Localized surface plasmon resonance (LSPR) has been explored recently as a promising approach to increase energy conversion efficiency in photovoltaic devices, particularly for thin film hydrogenated amorphous silicon (a-Si:H) solar cells. The LSPR is frequently excited via an electromagnetic (EM) radiation in proximate metallic nanostructures and its primary con sequences are selective photon extinction and local EM enhancement which gives rise to improved photogeneration of electron-hole (e-h) pairs, and consequently increases photocurrent. In this work, high-dielectric-constant (k) $ZrO_2$ (refractive index n=2.22, dielectric constant $\varepsilon=4.93$ at the wavelength of 550 nm) is proposed as spacing layer to enhance the LSPR for application to the thin film silicon solar cells. Compared to excitation of the LSPR using $SiO_2$ (n=1.46, $\varepsilon=2.13$ at the wavelength of 546.1 nm) spacing layer with Au nanoparticles of the radius of 45nm, that using $ZrO_2$ dielectric shows the advantages of(i) ~2.5 times greater polarizability, (ii) ~3.5 times larger scattering cross-section and ~1.5 times larger absorption cross-section, (iii) 4.5% higher transmission coefficient of the same thickness and (iv) 7.8% greater transmitted electric filed intensity at the same depth. All those results are calculated by Mie theory and Fresnel equations, and simulated by finite-difference time-domain (FDTD) calculations with proper boundary conditions. Red-shifting of the LSPR wavelength using high-k $ZrO_2$ dielectric is also observed according to location of the peak and this is consistent with the other's report. Finally, our experimental results show that variation of short-circuit current density ($J_{sc}$) of the LSPR enhanced a-Si:H solar cell by using the $ZrO_2$ spacing layer is 45.4% higher than that using the $SiO_2$ spacing layer, supporting our calculation and theory.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.155.2-155.2
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• 2013

Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.99-99
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• 2013

In this talk, I will present two research works in progress, which are: i) mapping of piezoelectric polarization and associated charge density distribution in the heteroepitaxial InGaN/GaN multi-quantum well (MQW) structure of a light emitting diode (LED) by using inline electron holography and ii) in-situ observation of the polarization switching process of an ferroelectric Pb(Zr1-x,Tix)O3 (PZT) thin film capacitor under an applied electric field in transmission electron microscope (TEM). In the first part, I will show that strain as well as total charge density distributions can be mapped quantitatively across all the functional layers constituting a LED, including n-type GaN, InGaN/GaN MQWs, and p-type GaN with sub-nm spatial resolution (~0.8 nm) by using inline electron holography. The experimentally obtained strain maps were verified by comparison with finite element method simulations and confirmed that not only InGaN QWs (2.5 nm in thickness) but also GaN QBs (10 nm in thickness) in the MQW structure are strained complementary to accommodate the lattice misfit strain. Because of this complementary strain of GaN QBs, the strain gradient and also (piezoelectric) polarization gradient across the MQW changes more steeply than expected, resulting in more polarization charge density at the MQW interfaces than the typically expected value from the spontaneous polarization mismatch alone. By quantitative and comparative analysis of the total charge density map with the polarization charge map, we can clarify what extent of the polarization charges are compensated by the electrons supplied from the n-doped GaN QBs. Comparison with the simulated energy band diagrams with various screening parameters show that only 60% of the net polarization charges are compensated by the electrons from the GaN QBs, which results in the internal field of ~2.0 MV cm-1 across each pair of GaN/InGaN of the MQW structure. In the second part of my talk, I will present in-situ observations of the polarization switching process of a planar Ni/PZT/SrRuO3 capacitor using TEM. We observed the preferential, but asymmetric, nucleation and forward growth of switched c-domains at the PZT/electrode interfaces arising from the built-in electric field beneath each interface. The subsequent sideways growth was inhibited by the depolarization field due to the imperfect charge compensation at the counter electrode and preexisting a-domain walls, leading to asymmetric switching. It was found that the preexisting a-domains split into fine a- and c-domains constituting a $90^{\circ}$ stripe domain pattern during the $180^{\circ}$ polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.