• Title/Summary/Keyword: Transmission applications

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Adaptive Limited Dynamic Bandwidth Allocation Scheme for EPON (EPON 시스템의 적응적 Limited 동적 대역 할당 방식)

  • Hwang Jun-Ho;Yoo Myung-Sik
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.31 no.5B
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    • pp.449-455
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    • 2006
  • Due to advance in multimedia applications and integrated Internet services, the optical access networks have been actively studied. In particular, Ethernet passive optical network (EPON) has received much attention due to high bandwidth provision with low cost. In EPON system, the data transmission is carried out in two directions: downstream (from OLT to ONU) and upstream (from ONU to OLT). The downstream data is broadcasted to every ONUs, while the upstream data is point-to-point transmitted between each ONU and OLT, where the uplink is shared by all ONUs in the form of TDMA. The bandwidth allocation algorithm is required to efficiently manage the bandwidth on the uplink. The limited algorithm was proposed to enhance the capability of dynamic bandwidth allocation. In this paper, we propose the adaptive limited algorithm to enhance the shortcomings of limited algorithm. The adaptive limited algorithm enhances the dynamics on bandwidth allocation, and at the same time controls the fairness on packet delay. Through the computer simulations, it is shown that the adaptive limited algorithm achieves high dynamic on bandwidth allocation, maintains a good fairness on packet delay between ONUs, and keeps the fairness on the bandwidth on the demand basis.

K-connected, (K+1)-covered Fault-tolerant Topology Control Protocol for Wireless Sensor Network (무선 센서 망을 위한 K-연결 (K+1)-감지도 고장 감내 위상 제어 프로토콜)

  • Park, Jae-Hyun
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.34 no.11B
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    • pp.1133-1141
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    • 2009
  • In this paper, we present a distributed fault-tolerant topology control protocol that configure a wireless sensor network to achieve k-connectivity and (k+1)-coverage. One fundamental issue in sensor networks is to maintain both sensing coverage and network connectivity in order to support different applications and environments, while some least active nodes are on duty. Topology control algorithms have been proposed to maintain network connectivity while improving energy efficiency and increasing network capacity. However, by reducing the number of links in the network, topology control algorithms actually decrease the degree of routing redundancy. Although the protocols for resolving such a problem while maintaining sensing coverage were proposed, they requires accurate location information to check the coverage, and most of active sensors in the constructed topology maintain 2k-connectivity when they keep k-coverage. We propose the fault-tolerant topology control protocol that is based on the theorem that k-connectivity implies (k+1)-coverage when the sensing range is at two times the transmission range. The proposed distributed algorithm does not need accurate location information, the complexity is O(1). We demonstrate the capability of the proposed protocol to provide guaranteed connectivity and coverage, through both geometric analysis and extensive simulation.

CHARACTERISTICS OF HETEROEPITAXIALLY GROWN $Y_2$O$_3$ FILMS BY r-ICB FOR VLSI

  • Choi, S.C.;Cho, M.H.;Whangbo, S.W.;Kim, M.S.;Whang, C.N.;Kang, S.B.;Lee, S.I.;Lee, M.Y.
    • Journal of the Korean institute of surface engineering
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    • v.29 no.6
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    • pp.809-815
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    • 1996
  • $Y_2O_3$-based metal-insulator-semiconductor (MIS) structure on p-Si(100) has been studied. Films were prepared by UHV reactive ionized cluster beam deposition (r-ICBD) system. The base pressure of the system was about $1 \times 10^{-9}$ -9/ Torr and the process pressure $2 \times 10^{-5}$ Torr in oxygen ambience. Glancing X-ray diffraction(GXRD) and in-situ reflection high energy electron diffracton(RHEED) analyses were performed to investigate the crystallinity of the films. The results show phase change from amorphous state to crystalline one with increasingqr acceleration voltage and substrate temperature. It is also found that the phase transformation from $Y_2O_3$(111)//Si(100) to $Y_2O_3$(110)//Si(100) in growing directions takes place between $500^{\circ}C$ and $700^{\circ}C$. Especially as acceleration voltage is increased, preferentially oriented crystallinity was increased. Finally under the condition of above substrate temperature $700^{\circ}C$ and acceleration voltage 5kV, the $Y_2O_3$films are found to be grown epitaxially in direction of $Y_2O_3$(1l0)//Si(100) by observation of transmission electron microscope(TEM). Capacitance-voltage and current-voltage measurements were conducted to characterize Al/$Y_2O_3$/Si MIS structure with varying acceleration voltage and substrate temperature. Deposited $Y_2O_3$ films of thickness of nearly 300$\AA$ show that the breakdown field increases to 7~8MV /cm at the same conditon of epitaxial growing. These results also coincide with XPS spectra which indicate better stoichiometric characteristic in the condition of better crystalline one. After oxidation the breakdown field increases to 13MV /cm because the MIS structure contains interface silicon oxide of about 30$\AA$. In this case the dielectric constant of only $Y_2O_3$ layer is found to be $\in$15.6. These results have demonstrated the potential of using yttrium oxide for future VLSI/ULSI gate insulator applications.

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Optical properties and applications of $TiO_2$ films prepared by ion beam sputtering (이온빔 스퍼터링으로 증착한 $TiO_2$박막의 광학적 특성 및 응용)

  • 이정환;조준식;김동환;고석근
    • Journal of the Korean Vacuum Society
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    • v.11 no.3
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    • pp.176-182
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    • 2002
  • Amorphous $TiO_2$ thin films were deposited on glass substrates by ion beam sputtering in which the ratio of $O_2$/Ar gas used as discharged gas was varied from 0 to 2. After optical and microstructure properties and chemical composition of thin films was analyzed, antireflection coating layers were fabricated with $SiO_2$/$TiO_2$ multi-layers. Thin films deposition was performed at room temperature and ion beam voltage and ion current density for sputtering of target were fixed at 1.2 kV and 200 $\mu\textrm{A}/\textrm{cm}^2$, respectively. Refractive indexs of the deposited $TiO_2$films were 2.40-2.45 at a wavelength of 633 nm. $TiO_2$films had high transmission and stoichiometry when ratio of $O_2$/Ar was 1. Rms roughness of deposited $TiO_2$ film was below 7 $\AA$. In excessive $O_2$ environments, however Rms roughness increased over 50 $\AA$. Transmittance decreased by scattering of rough surface. Reflectance of $SiO_2$/$TiO_2$multi-layers was below 1% in visible light.

Synthesis of High-Quality Single-Walled Carbon Nanotube Fibers by Vertical CVD (수직 가열로를 이용한 고순도 단일벽 탄소나노튜브 섬유의 합성)

  • Kim, Tae-Min;Song, Woo-Seok;Kim, Yoo-Seok;Kim, Soo-Youn;Choi, Won-Chel;Park, Chong-Yun
    • Journal of the Korean Vacuum Society
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    • v.19 no.5
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    • pp.377-384
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    • 2010
  • Many routes have been developed for the synthesis of signle-walled carbon nanotubes (SWCNTs). We spun fibers of SWCNTs directly from vertical furnace using a liquid source of carbon and an iron-contained molecule. The solution was prepared by ethanol as a carbon source, in which ferrocene as a catalyst, thiophene were dissolved. It was then injected from the top of the furnace into hot zone with hydrogen as a carrier gas. We successfully synthesized high-quality SWCNTs by adjusting the various experimental conditions, such as concentration of ferrocene, solution injection rate, concentration of thiophene, and hydrogen flow rate. Measurement of Raman spectroscopy, scanning electron microscopy, and transmission electron microscopy were carried out to find the optimized conditions. The synthesized SWCNTs (1.16~1.64 nm) appeared a bundle structure and well-aligned parallel to the direction of furnace. These results also provide an simple way for high-quality SWCNTs mass production and fabricating direct spining SWCNTs fiber. It will allow one-step production of SWCNTs fiber with potentially excellent properties and wide-range applications.

Energy Band Structure, Electronic and Optical properties of Transparent Conducting Nickel Oxide Thin Films on $SiO_2$/Si substrate

  • Denny, Yus Rama;Lee, Sang-Su;Lee, Kang-Il;Lee, Sun-Young;Kang, Hee-Jae;Heo, Sung;Chung, Jae-Gwan;Lee, Jae-Cheol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.347-347
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    • 2012
  • Nickel Oxide (NiO) is a transition metal oxide of the rock salt structure that has a wide band gap of 3.5 eV. It has a variety of specialized applications due to its excellent chemical stability, optical, electrical and magnetic properties. In this study, we concentrated on the application of NiO thin film for transparent conducting oxide. The energy band structure, electronic and optical properties of Nickel Oxide (NiO) thin films grown on Si by using electron beam evaporation were investigated by X-Ray Photoelectron Spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and UV-Spectrometer. The band gap of NiO thin films determined by REELS spectra was 3.53 eV for the primary energies of 1.5 keV. The valence-band offset (VBO) of NiO thin films investigated by XPS was 3.88 eV and the conduction-band offset (CBO) was 1.59 eV. The UV-spectra analysis showed that the optical transmittance of the NiO thin film was 84% in the visible light region within an error of ${\pm}1%$ and the optical band gap for indirect band gap was 3.53 eV which is well agreement with estimated by REELS. The dielectric function was determined using the REELS spectra in conjunction with the Quantitative Analysis of Electron Energy Loss Spectra (QUEELS)-${\varepsilon}({\kappa},{\omega})$-REELS software. The Energy Loss Function (ELF) appeared at 4.8, 8.2, 22.5, 38.6, and 67.0 eV. The results are in good agreement with the previous study [1]. The transmission coefficient of NiO thin films calculated by QUEELS-REELS was 85% in the visible region, we confirmed that the optical transmittance values obtained with UV-Spectrometer is the same as that of estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS within uncertainty. The inelastic mean free path (IMFP) estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS is consistent with the IMFP values determined by the Tanuma-Powell Penn (TPP2M) formula [2]. Our results showed that the IMFP of NiO thin films was increased with increasing primary energies. The quantitative analysis of REELS provides us with a straightforward way to determine the electronic and optical properties of transparent thin film materials.

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Interface of Tele-Task Operation for Automated Cultivation of Watermelon in Greenhouse

  • Kim, S.C.;Hwang, H.
    • Journal of Biosystems Engineering
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    • v.28 no.6
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    • pp.511-516
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    • 2003
  • Computer vision technology has been utilized as one of the most powerful tools to automate various agricultural operations. Though it has demonstrated successful results in various applications, the current status of technology is still for behind the human's capability typically for the unstructured and variable task environment. In this paper, a man-machine interactive hybrid decision-making system which utilized a concept of tole-operation was proposed to overcome limitations of computer image processing and cognitive capability. Tasks of greenhouse watermelon cultivation such as pruning, watering, pesticide application, and harvest require identification of target object. Identifying water-melons including position data from the field image is very difficult because of the ambiguity among stems, leaves, shades. and fruits, especially when watermelon is covered partly by leaves or stems. Watermelon identification from the cultivation field image transmitted by wireless was selected to realize the proposed concept. The system was designed such that operator(farmer), computer, and machinery share their roles utilizing their maximum merits to accomplish given tasks successfully. And the developed system was composed of the image monitoring and task control module, wireless remote image acquisition and data transmission module, and man-machine interface module. Once task was selected from the task control and monitoring module, the analog signal of the color image of the field was captured and transmitted to the host computer using R.F. module by wireless. Operator communicated with computer through touch screen interface. And then a sequence of algorithms to identify the location and size of the watermelon was performed based on the local image processing. And the system showed practical and feasible way of automation for the volatile bio-production process.

On Generating Backbone Based on Energy and Connectivity for WSNs (무선 센서네트워크에서 노드의 에너지와 연결성을 고려한 클러스터 기반의 백본 생성 알고리즘)

  • Shin, In-Young;Kim, Moon-Seong;Choo, Hyun-Seung
    • Journal of Internet Computing and Services
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    • v.10 no.5
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    • pp.41-47
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    • 2009
  • Routing through a backbone, which is responsible for performing and managing multipoint communication, reduces the communication overhead and overall energy consumption in wireless sensor networks. However, the backbone nodes will need extra functionality and therefore consume more energy compared to the other nodes. The power consumption imbalance among sensor nodes may cause a network partition and failures where the transmission from some sensors to the sink node could be blocked. Hence optimal construction of the backbone is one of the pivotal problems in sensor network applications and can drastically affect the network's communication energy dissipation. In this paper a distributed algorithm is proposed to generate backbone trees through robust multi-hop clusters in wireless sensor networks. The main objective is to form a properly designed backbone through multi-hop clusters by considering energy level and degree of each node. Our improved cluster head selection method ensures that energy is consumed evenly among the nodes in the network, thereby increasing the network lifetime. Comprehensive computer simulations have indicated that the newly proposed scheme gives approximately 10.36% and 24.05% improvements in the performances related to the residual energy level and the degree of the cluster heads respectively and also prolongs the network lifetime.

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RF and Optical properties of Graphene Oxide

  • Im, Ju-Hwan;Rani, J.R.;Yun, Hyeong-Seo;O, Ju-Yeong;Jeong, Yeong-Mo;Park, Hyeong-Gu;Jeon, Seong-Chan
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2012.05a
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    • pp.68.1-68.1
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    • 2012
  • The best part of graphene is - charge-carriers in it are mass less particles which move in near relativistic speeds. Comparing to other materials, electrons in graphene travel much faster - at speeds of $10^8cm/s$. A graphene sheet is pure enough to ensure that electrons can travel a fair distance before colliding. Electronic devices few nanometers long that would be able to transmit charge at breath taking speeds for a fraction of power compared to present day CMOS transistors. Many researches try to check a possibility to make it a perfect replacement for silicon based devices. Graphene has shown high potential to be used as interconnects in the field of high frequency electrical devices. With all those advantages of graphene, we demonstrate characteristics of electrical and optical properties of graphene such as the effect of graphene geometry on the microwave properties using the measurements of S-parameter in range of 500 MHz - 40 GHz at room temperature condition. We confirm that impedance and resistance decrease with increasing the number of graphene layer and w/L ratio. This result shows proper geometry of graphene to be used as high frequency interconnects. This study also presents the optical properties of graphene oxide (GO), which were deposited in different substrate, or influenced by oxygen plasma, were confirmed using different characterization techniques. 4-6 layers of the polycrystalline GO layers, which were confirmed by High resolution transmission electron microscopy (HRTEM) and electron diffraction analysis, were shown short range order of crystallization by the substrate as well as interlayer effect with an increase in interplanar spacing, which can be attributed to the presence of oxygen functional groups on its layers. X-ray photoelectron Spectroscopy (XPS) and Raman spectroscopy confirms the presence of the $sp^2$ and $sp^3$ hybridization due to the disordered crystal structures of the carbon atoms results from oxidation, and Fourier Transform Infrared spectroscopy (FTIR) and XPS analysis shows the changes in oxygen functional groups with nature of substrate. Moreover, the photoluminescent (PL) peak emission wavelength varies with substrate and the broad energy level distribution produces excitation dependent PL emission in a broad wavelength ranging from 400 to 650 nm. The structural and optical properties of oxygen plasma treated GO films for possible optoelectronic applications were also investigated using various characterization techniques. HRTEM and electron diffraction analysis confirmed that the oxygen plasma treatment results short range order crystallization in GO films with an increase in interplanar spacing, which can be attributed to the presence of oxygen functional groups. In addition, Electron energy loss spectroscopy (EELS) and Raman spectroscopy confirms the presence of the $sp^2$ and $sp^3$ hybridization due to the disordered crystal structures of the carbon atoms results from oxidation and XPS analysis shows that epoxy pairs convert to more stable C=O and O-C=O groups with oxygen plasma treatment. The broad energy level distribution resulting from the broad size distribution of the $sp^2$ clusters produces excitation dependent PL emission in a broad wavelength range from 400 to 650 nm. Our results suggest that substrate influenced, or oxygen treatment GO has higher potential for future optoelectronic devices by its various optical properties and visible PL emission.

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A study on improvement of ISO/IEC 29157 MAC protocol (ISO/IEC 29157 표준 MAC 프로토콜 개선 연구)

  • Cha, Bong-Sang;Jeong, Eui-Hoon;Jeon, Gwangil;Seo, Dae-Young
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.13 no.5
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    • pp.17-26
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    • 2013
  • ISO/IEC 29157 originally developed in the Republic of Korea and is based on commercially available PicoCast v1.0. ISO/IEC JTC1 SC6 was registered by the international standard on May 2010. A single platform for a variety of applications and media formats to support development objectives were. ISO/IEC 29157 based wireless networks, ie, Pico-net to master node periodically transmit sync signal is synchronized to the number of slave nodes have the communications structure. Pico-net also supports a variety of network topologies and direct communication between nodes(single-hop communication) and QoS is guaranteed. But Pico-net network structure has the following problems. Loss of communication problems due to mobile nodes, resulting in limitations of node mobility and wireless network operation range of conventional wireless networks operating range less than 1/4 was reduced to the problem. In this paper, a possible solution to the problems mentioned is proposed, using multi-hop communication technology and sync signal transmission technology between nodes.