• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.5
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• pp.1089-1094
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• 2013

In this study, we propose how th implement a MDDI(Mobile Display Digital Interface) protocol packet generation method in software. MDDI protocol is widely used in mobile display device. MDDI protocol packets are generated by software within micro processor. This method needs the minimum hardware configuration. In order to implementation of this method, we design a hardware platform with a high performance microprocessor and a FPGA. The packets generated by software within microprocessor are converted into LVDS signals, and transmitted by hardware within FPGA. This study suggests the benefits of the way how software can easily create a variety of packet. But, this proposed method takes more time in packet transmission compared to the traditional method. This weakness remains as a future challenge, which can be soon improved.

• Journal of Advanced Navigation Technology
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• v.24 no.4
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• pp.285-290
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• 2020

This paper presents a time synchronization algorithm based on PLL for application to telemetry systems and implement FPGA logic. The large aircraft of the telemetry system acquires status information through each distributed acquisition devices and analyzes the flight status in real time. For this reason, time synchronization between systems is important to improve precision. This paper presents a PLL based time synchronization algorithm that is less complex than other time synchronization methods and takes less time to process data because there is minimized message transmission for synchronization. The validity of proposed algorithm is proved by simulation of Python. And the VHDL logic was implemented in FPGA to check the time synchronization performance.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.17 no.1
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• pp.97-119
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• 2023

The number of industrial Internet of Things (IoT) users is increasing rapidly. Lightweight block ciphers have started to be used to protect the privacy of users. Hardware-oriented security design should fully consider the use of fewer hardware devices when the function is fully realized. Thus, this paper designs a lightweight block cipher IIoTBC for industrial IoT security. IIoTBC system structure is variable and flexibly adapts to nodes with different security requirements. This paper proposes a 4×4 S-box that achieves a good balance between area overhead and cryptographic properties. In addition, this paper proposes a preprocessing method for 4×4 S-box logic gate expressions, which makes it easier to obtain better area, running time, and power data in ASIC implementation. Applying it to 14 classic lightweight block cipher S-boxes, the results show that is feasible. A series of performance tests and security evaluations were performed on the IIoTBC. As shown by experiments and data comparisons, IIoTBC is compact and secure in industrial IoT sensor nodes. Finally, IIoTBC has been implemented on a temperature state acquisition platform to simulate encrypted transmission of temperature in an industrial environment.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.4
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• pp.1-6
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• 2008

In this paper, millimeter-wave broadband MHEMT (Metamorphic High Electron Mobility Transistor) cascode amplifiers were designed and fabricated. The $0.1{\mu}m$ InGaAs/InAlAs/GaAs MHEMT was fabricated for cascode amplifiers. The DC characteristics of MHEMT are 670 mA/mm of drain current density, 588 mS/mm of maximum transconductance. The current gain cut-off frequency($f_T$) is 139 GHz and the maximum oscillation frequency($f_{max}$) is 266 GHz. To prevent oscillation of the designed cascode amplifiers, a parallel resistor and capacitor were connected to the drain of common gate device. By using the CPW (Coplanar Waveguide) transmission line, the cascode amplifier was designed and matched for the broadband characteristics. The designed amplifier was fabricated by the MHEMT MMIC process that was developed through this research. As the results of measurement, the amplifier was obtained 3 dB bandwidth of 50.37 GHz between 20.76 to 71.13 GHz. Also, this amplifier represents the S21 gain with the average 7.07 dB gain in bandwidth and the maximum gain of 10.3 dB at 30 GHz.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.1
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• pp.16-22
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• 2008

We fabricated thermally-evaporated 10 nm-Ni/30 nm and 70 nm Poly-Si/200 nm-$SiO_2/Si$ structures to investigate the thermal stability of nickel silicides formed by rapid thermal annealing(RTA) of the temperature of $300{\sim}1100^{\circ}C$ for 40 seconds. We employed for a four-point tester, field emission scanning electron microscope(FE-SEM), transmission electron microscope(TEM), high resolution X-ray diffraction(HRIXRD), and scanning probe microscope(SPM) in order to examine the sheet resistance, in-plane microstructure, cross-sectional microstructure evolution, phase transformation, and surface roughness, respectively. The silicide on 30 nm polysilicon substrate was stable at temperature up to $900^{\circ}C$, while the one on 70 nm substrate showed the conventional $NiSi_2$ transformation temperature of $700^{\circ}C$. The HRXRD result also supported the existence of NiSi-phase up to $900^{\circ}C$ for the Ni silicide on the 30 nm polysilicon substrate. FE-SEM and TEM confirmed that 40 nm thick uniform silicide layer and island-like agglomerated silicide phase of $1{\mu}m$ pitch without residual polysilicon were formed on 30 nm polysilicon substrate at $700^{\circ}C\;and\;1000^{\circ}C$, respectively. All silicides were nonuniform and formed on top of the residual polysilicon for 70 nm polysilicon substrates. Through SPM analysis, we confirmed the surface roughness was below 17 nm, which implied the advantage on FUSI gate of CMOS process. Our results imply that we may tune the thermal stability of nickel monosilicide by reducing the height of polysilicon gate.

• Journal of IKEEE
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• v.2 no.1 s.2
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• pp.1-14
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• 1998

In this paper, Antenna, LNA, Mixer, VCO, and Modulation/Demodulation in Baseband processor which are the RF main components in Wireless LAN system for ultra high-speed communications network are studied. Antenna bandwidth and selective fading due to multipath can be major obstacles in high speed digital communications. To solve this problem, wide band MSA which has loop-structure magnetic antenna characteristics is designed. Distributed mixer using dual-gate GaAs MESFET can achieve over 10dB LO/RF isolation without hybrid, and minimize circuit size. As linear mixing signal is produced, distortions can be decreased at baseband signals. Conversion gain is achieved by mixing and amplification simultaneously. Mixer is designed to have wide band characteristics using distributed amplifier. In VCO design, Oscillator design method by large signal analysis is used to produce stable signal. Modulation/Demodulation system in baseband processor, DS/SS technique which is robust against noise and interference is used to eliminate the effect of multipath propagation. DQPSK modulation technique with M-sequences for wideband PN spreading signals is adopted because of BER characteristic and high speed digital signal transmission.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.38 no.12
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• pp.1-9
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• 2001

In the APON(ATM Passive Optical Network), the transmission of the upstream traffic is based on a TDMA(Time Division Multiple Access) method that an OLT(Optical Line Termination) permits ONUs(Optical Network Units) sending cells by allocating time slots. Because the upstream is not a streaming mode, the cell synchronizer has to be operated in the burst mode. Also, the cell phase monitor is required to prevent collisions between cells which are transmitted by multiple ONUs through a single optical fiber. In this paper, a TDMA burst cell synchroniser is implemented with the FPGA(Field Programmable Gate Array) being used in the APON based on G.983.1 for transmitting upstream cells. It has two main functions which are the upstream data recovery and the phase monitoring. The former is to recover the upstream data and clock in the OLT by seeking the preamble which is the overhead of the upstream time slot and by aligning the phase of the bit and cell with the system clock. The latter is to provide the information to the ONU to compensate for the equalization delay by monitoring continuously the phase difference between adjacent cells to avoid the cell collision on the upstream.

• Journal of the Institute of Convergence Signal Processing
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• v.15 no.2
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• pp.70-75
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• 2014

Recently, the demand for high-integrated, low-powered, and high-powered SoC design has been increasing due to the multi-functionality and the miniaturization of digital devices and the high capacity of service informations. With the rapid evolution of the system, the required hardware performances have become diversified, the FPGA system has been increasingly adopted for the rapid verification, and SoC system using the FPGA and the ARM core for control has been growingly chosen. While the AXI bus is used in these kinds of systems in various ways, it is traditionally designed with AXI slave structure. In slave structure, there are problems with the CPU resources because CPU is continually involved in the data transfer and can't be used in other jobs, and with the decreased transmission efficiency because the time not used of AXI bus beomes longer. In this paper, an efficient AXI master interface is proposed to solve this problem. The simulation results show that the proposed system achieves reductions in the consumption clock by an average of 51.99% and in the slice by 31% and that the maximum operating frequency is increased to 107.84MHz by about 140%.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.38 no.3
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• pp.40-46
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• 2001

In this paper, a novel low power full adder circuit comprising only 10 transistors is proposed. The circuit is based on the six -transistor CMOS XOR circuit, which generates both XOR and XNOR signals and pass transistors. This adder circuit provides a good low power characteristics due to the smaller number of transistors and the elimination of short circuit current paths. Layouts have been carried out using a 0.65 ${\mu}m$ ASIC design rule for evaluation purposes. The physical design has been evaluated using HSPICE at 25MHz to 50MHz. The proposed circuit has been used to build 2bit and 8bit ripple carry adders, which are used for evaluation of power consumption, time delay and rise and fall time. The proposed circuit shows substantially improved power consumption characteristics, about 70% lower than transmission gate full adder (TFA), and 60% lower than a design using 14 transistors (TR14). Delay and signal rise and fall time are also far shorter than other conventional designs such as TFA and TR14.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.324-326
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• 2016

In this study, we have investigated indium tin zinc oxide (ITZO) as an active channel for non-volatile memory (NVM) devices. The electrical and memory characteristics of NVM devices using multi-stack gate insulator SiO2/SiOx/SiOxNy (OOxOy) with Si-rich SiOx for charge storage layer were also reported. The transmittance of ITZO films reached over 85%. Besides, ITZO-based NVM devices showed good electrical properties such as high field effect mobility of 25.8 cm2/V.s, low threshold voltage of 0.75 V, low subthreshold slope of 0.23 V/dec and high on-off current ratio of $1.25{\times}107$. The transmission Fourier Transform Infrared spectroscopy of SiOx charge storage layer with the richest silicon content showed an assignment at peaks around 2000-2300 cm-1. It indicates that many silicon phases and defect sources exist in the matrix of the SiOx films. In addition, the characteristics of NVM device showed a retention exceeding 97% of threshold voltage shift after 104 s and greater than 94% after 10 years with low operating voltage of +11 V at only 1 ms programming duration time. Therefore, the NVM fabricated by high transparent ITZO active layer and OOxOy memory stack has been applied for the flexible memory system.