• Title/Summary/Keyword: Transmission Electron microscopy

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Optimal Conditions for Defect Analysis Using Electron Channeling Contrast Imaging

  • Oh, Jin-Su;Yang, Cheol-Woong
    • Applied Microscopy
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    • v.46 no.3
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    • pp.164-166
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    • 2016
  • Electron channeling contrast imaging (ECCI) is a powerful analyzing tool for identifying lattice defects like dislocations and twin boundaries. By using diffraction-based scanning electron microscopy technique, it enables microstructure analysis, which is comparable to that obtained by transmission electron microscopy that is mostly used in defect analysis. In this report, the optimal conditions for investigating crystal defects are suggested. We could obtain the best ECCI images when both acceleration voltage and probe current are high (30 kV and 20 nA). Also, shortening the working distance (6 mm) enhances the quality of defect imaging.

Advanced Cryo-Electron Microscopy Technology: High Resolution Structure of Macromolecules

  • Chung, Jeong Min;Jung, Hyun Suk
    • Applied Microscopy
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    • v.46 no.1
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    • pp.1-5
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    • 2016
  • Recent cryo-electron microscopy (EM) studies reported the structure of various types of proteins at high resolution which is sufficient to visualize the intermolecular interaction at near atomic level. There are two main factors that cause the advances in cryo-EM; the development of image processing techniques, such as single particle analysis, and the improved electron detection devices. Although the atomic structures of small and asymmetric proteins are not yet to be determined by cryo-EM, this striking improvement implies the bright prospect of the application in biomedical studies. This study reviews the recently published studies reported high resolution structures using improved imaging analysis techniques and electron detectors. Furthermore, we will discuss about the future aspects of cryo-EM application.

Analysis on the Preservation of Scalp Collected from Full-Term Baby Mummy of Medieval Joseon Dynasty (조선시대 태아 미라 두피조직의 보존상태 분석)

  • Chang, Byung-Soo
    • Applied Microscopy
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    • v.38 no.2
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    • pp.135-140
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    • 2008
  • In this study, I investigated on the ultrastructure of scalp skin from full term baby mummy by using transmission and scanning electron microscopy. The baby mummy was found within the uterus of a 16th century (Joseon Dynasty) mummified woman aged 20${\sim}$30 years old. In scanning electron microscopic study, I found that the outer surface of scalp skin containing of sweat gland and stratum corneum are well preserved. The skin of the scalp measured about 1 mm in thickness and the epidermis was well distinguished from the dermis. In transmission electron microscopy, the shape and structure of the epithelial cells were not confirmed. I also observed well preserved collagen fibers composed of collagen fibrils with cross banding pattern ultrastructurally. But, the other connective cells were not observed due to decomposition of the dermis.

Transmission Electron Microscopy on Memristive Devices: An Overview

  • Strobel, Julian;Neelisetty, Krishna Kanth;Chakravadhanula, Venkata Sai Kiran;Kienle, Lorenz
    • Applied Microscopy
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    • v.46 no.4
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    • pp.206-216
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    • 2016
  • This communication is to elucidate the state-of-the-art of techniques necessary to gather information on a new class of nanoelectronic devices known as memristors and related resistive switching devices, respectively. Unlike classical microelectronic devices such as transistors, the chemical and structural variations occurring upon switching of memristive devices require cutting-edge electron microscopy techniques. Depending on the switching mechanism, some memristors call for the acquisition of atomically resolved structural data, while others rely on atomistic chemical phenomena requiring the application of advanced X-ray and electron spectroscopy to correlate the real structure with properties. Additionally, understanding resistive switching phenomena also necessitates the application not only of pre- and post-operation analysis, but also during the process of switching. This highly challenging in situ characterization also requires the aforementioned techniques while simultaneously applying an electrical bias. Through this review we aim to give an overview of the possibilities and challenges as well as an outlook onto future developments in the field of nanoscopic characterization of memristive devices.

Chloroplasts morphology investigation with diverse microscopy approaches and inter-specific variation in Laurencia species (Rhodophyta)

  • Paradas, Wladimir Costa;Andrade, Leonardo Rodrigues;Salgado, Leonardo Tavares;Collado-Vides, Ligia;Pereira, Renato Crespo;Amado-Filho, Gilberto Menezes
    • ALGAE
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    • v.30 no.4
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    • pp.291-301
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    • 2015
  • The present study described with different microscopy approaches chloroplasts lobes in Laurencia sensu latu (Rhodophyta) species and found inter-specific differences among them. Chloroplasts were investigated using confocal laser scanning microscopy (LSM), transmission electron microscopy (TEM) and high resolution scanning electron microscopy (HRSEM). Using and TEM and HRSEM images we distinguished chloroplasts with lobes than chloroplasts without lobes in Yuzurua poiteaui var. gemmifera (Harvey) M. J. Wynne and Laurencia dendroidea J. Agardh cortical cells. The LSM images showed chloroplasts lobes (CLs) with different morphologies, varying from thicker and longer undulated projections in Y. poiteaui var. and L. dendroidea to very small and thin tubules as in Laurencia translucida Fujii & Cordeiro-Marino. The diameter and length of CLs from Y. poiteaui var. and L. dendroidea were significantly higher than L. translucida CLs (p < 0.01). Based on LSM observations, we suggest that lobes morphology has a taxonomic validity only to characterize L. translucida species.

Review on Electronic Correlations and the Metal-Insulator Transition in SrRuO3

  • Pang, Subeen
    • Applied Microscopy
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    • v.47 no.3
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    • pp.187-202
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    • 2017
  • The classical electron band theory is a powerful tool to describe the electronic structures of solids. However, the band theory and corresponding density functional theory become inappropriate if a system comprises localized electrons in a scenario wherein strong electron correlations cannot be neglected. $SrRuO_3$ is one such system, and the partially localized d-band electrons exhibit some interesting behaviors such as enhanced effective mass, spectral incoherency, and oppression of ferromagnetism and itinerancy. In particular, a Metal-Insulator transition occurs when the thickness of $SrRuO_3$ approaches approximately four unit cells. In the computational studies, irrespective of the inclusion of on-site Hubbard repulsion and Hund's coupling parameters, correctly depicting the correlation effects is difficult. Because the oxygen atoms and the symmetry of octahedra are known to play important roles in the system, scrutinizing both the electronic band structure and the lattice system of $SrRuO_3$ is required to find the origin of the correlated behaviors. Transmission electron microscopy is a promising solution to this problem because of its integrated functionalities, which include atomic-resolution imaging and electron energy loss spectroscopy.

In Situ Transmission Electron Microscopy Study on the Reaction Kinetics of the Ni/Zr-interlayer/Ge System

  • Lee, Jae-Wook;Bae, Jee-Hwan;Kim, Tae-Hoon;Shin, Keesam;Lee, Je-Hyun;Song, Jung-Il;Yang, Cheol-Woong
    • Applied Microscopy
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    • v.45 no.1
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    • pp.16-22
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    • 2015
  • The reaction kinetics of the growth of Ni germanide in the Ni/Zr-interlayer/Ge system was investigated using isothermal in situ annealing at three different temperatures in a transmission electron microscope. The growth rate of Ni germanide in the Ni/Zr-interlayer/Ge system was determined to be diffusion controlled and depended on the square root of the time, with the activation energy of $1.04P{\pm}0.04eV$. For the Ni/Zr-interlayer/Ge system, no intermediate or intermixing layer between the Zr-interlayer and Ge substrate was formed, and thus the Ni germanide was formed and grew uniformly due to Ni diffusion through the diffusion path created in the amorphous Zr-interlayer during the annealing process in the absence of any intermetallic compounds. The reaction kinetics in the Ni/Zr-interlayer/Ge system was affected only by the Zr-interlayer.