• Journal of IKEEE
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• v.11 no.4
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• pp.152-157
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• 2007

AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated and the effect of ${N_2}O$ plasma on the electrical characteristics of the devices was investigated. The HEMT exposed to ${N_2}O$ plasma formed by 40 W of RF power in a chamber with pressure of 20 mTorr at a temperature of $200^{\circ}C$, exhibited a reduction of gate leakage current from 246 nA to 1.2 pA by 10 seconds treatment. The current between the two isolated active regions reduced from 3 uA to 7 nA and the sheet resistance of the active layer was lowered also. The variations of electrical characteristics for HEMT were occurred within a short time expose of 10 seconds and the successive expose did not influence on the improvements of gate leakage characteristics and conductivity of the active region. The reduced leakage current level was not varied by successive $SiO_2$ deposition and its removal. The transconductnace and drain current of AlGaN/GaN HEMTs were increased also by the expose to the ${N_2}O$ plasma.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.4
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• pp.50-61
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• 2010

Nowadays, the SoC is watched by all over the world with interest. The design trend of the SoC is hardware and software co-design which includes the design of hardware structure in RTL level and the development of embedded software. Also the technology is toward deep-submicron and the observability of the SoC's internal state is not easy. Because of the above reasons, the SoC debug is very difficult and time-consuming. So we need a reliable debugger to find the bugs in the SoC and embedded software. In this paper, we developed a hardware debugger named OCD. It is based on IEEE 1140.1 JTAG standard. In order to verify the operation of OCD, it is integrated into the 32bit RISC processor - Core-A (Core-A is the unique embedded processor designed by Korea) and is tested by interconnecting with software debugger. When embedding the OCD in Core-A, there is 14.7% gate count overhead. We can modify the DCU which occupies 2% gate count in OCD to adapt with other processors as a debugger.

• Journal of Sensor Science and Technology
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• v.29 no.1
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• pp.14-18
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• 2020

This study investigates the nitrogen dioxide (NO₂) sensing characteristics of an Si MOSFET gas sensor with a tungsten trioxide (WO₃) sensing layer deposited using the sputtering method. The Si MOSFET gas sensor consists of a horizontal floating gate (FG) interdigitated with a control gate (CG). The WO₃ sensing layer is deposited on the interdigitated CG-FG of a field effect transistor(FET)-type gas sensor platform. The sensing layer is deposited with different thicknesses of the film ranging from 100 nm to 1 ㎛ by changing the deposition times during the sputtering process. The sensing characteristics of the fabricated gas sensor are measured at different NO₂ concentrations and operating temperatures. The response of the gas sensor increases as the NO₂ concentration and operating temperature increase. However, the gas sensor has an optimal performance at 180℃ considering both response and recovery speed. The response of the gas sensor increases significantly from 24% to 138% as the thickness of the sensing layer increases from 100 nm to 1 ㎛. The sputtered WO₃ film consists of a dense part and a porous part. As reported in previous work, the area of the porous part of the film increases as the thickness of the film increases. This increased porous part promotes the reaction of the sensing layer with the NO₂ gas. Consequently, the response of the gas sensor increases as the thickness of the sputtered WO₃ film increases.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.12
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• pp.1-7
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• 2008

Magnetic Tunneling Junction (MTJ) has been used as a nonvolatile universal storage element mainly in memory technology. However, according to several recent studies, magneto-logic using MTJ elements show much potential in substitution for the transistor-based logic device. Magneto-logic based on MTJ can maintain the data during the power-off mode, since an MTJ element can store the result data in itself. Moreover, just by changing input signals, the full logic functions can be realized. Because of its programmability, it can embody the reconfigurable magneto-logic circuit in the rigid physical architecture. In this paper, we propose a novel 3-bit arbitrary magneto-logic circuit beyond the simple combinational logic or the short sequential one. We design the 3-bit magneto-logic which has the most complexity using MTJ elements and verify its functionality. The simulation results are presented with the HSPICE macro-model of MTJ that we have developed in our previous work. This novel magneto-logic based on MTJ can realize the most complex logic function. What is more, 3-bit arbitrary logic operations can be implemented by changing gate signals of the current drivel circuit.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.77-78
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• 2006

최근 flexible OLED의 구동에 사용하기 위한 유기박막트랜지스터(Organic Thin Film Transistor, OTFT)의 연구에서는 용매에 용해되어 spin coating이 가능한 재료의 개발에 관심을 두고 있다. 현재 pentacene으로는 아직 spin coating으로 제작할 수 있는 상용화된 제품이 없고 spin coating이 가능한 활성층 물질(active material)로 P3HT가 쓰이고 있다. 본 연구에서는 용해 가능한 P3HT 활성층 물질과 여러 종류의 용해 가능한 게이트 절연물(gate insulator, Gl)을 사용하여 안정된 소자를 구현할 수 있는 공정을 개발하는 목적으로 metal-insulator-semironductor(MIS) 소자를 제작하여 C-V 특성을 측정하고 분석하였다. 먼저 7mm${\times}$7mm 크기의 pyrex glass 시편 위에 바닥 전극으로 $1600{\AA}$ Au을 증착하고 spin coating 방식을 이용하여 PVP, PVA, PVK, BCB, Pl의 5종류의 게이트 절연층을 각각 형성하였고 그 위에 같은 방법으로 P3HT를 코팅하였다. P3HT 코팅 시 bake 공정의 유무와 spin rpm의 변화에 따른 P3HT의 두께를 측정하였다. Gl의 종류별로 주파수에 따른 capatltancc를 측정하여 비교, 분석하였다. C-V 측정 결과 PVP, PVA, PVK, BCB, Pl의 단위 면적당 capacitance 값은 각각 1.06, 2.73, 2.94, 3.43, $2.78nF/cm^2$로 측정되었다. Threshold voltage, $V_{th}$는 각각 -0.4, -0.7, -1.6, -0.1, -0.2V를 나타냈다. 주파수에 따른 capacitance 변화율을 측정한 결과 Gl 물질 모두 주파수가 높을수록 capacitance가 점점 감소하는 경향을 보였으나 1${\sim}$2nF 이내의 범위에서 작은 변화율만 나타냈다. P3HT의 두께와 bake 온도를 변화시켜 C-V 값을 측정한 결과 차이는 없었다. FE-SEM으로 관찰한 결과에서도 두께나 온도에 따른 P3HT의 표면 morphology 차이를 확인할 수 없었다. 본 연구에서 PVK와 P3HT의 조합이 수율(yield)면에서 가장 안정적이면서 $3.43\;nF/cm^2$의 가장 높은 capacitance 값을 나타내고 $V_{th}$ 값 또한 -1.6V로 가장 낮은 값을 보였다.

• KSBB Journal
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• v.22 no.6
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• pp.409-413
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• 2007

Polydiacetylene(PDA)-based sensors possess a number of properties that can be successfully applied for label-free detection system. PDA is one of the most attractive color-generating materials, with growing applications as sensors. Here we introduce various PDA-based devices, used as biosensor, chemosensor, thermosensor, and optoelectronics sensor. In general, PDA liposomes and films are closely packed and properly designed for polymerization via 1,4-addition reaction to form an ene-yne alternating polymer chain. PDA-based two/three dimensional structures have been used for colorimetric or fluorescent devices, sensing biological as well as chemical components. This color-generating material also present a very high charge carrier mobility, allowing its application as field-effect transistor (FET). The immobilized PDA structures or films have distinct advantages for the detection of low concentration target molecules over the aqueous solution-based detection systems. In the present review, reported detection methods by using various PDA structures are summarized with updated references.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.169-169
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• 2010

As display industry requires various applications for future display technology, which can guarantees high level of flexibility and transparency on display panel, oxide semiconductor materials are regarded as one of the best candidates. $InGaZnO_4$(IGZO) has gathered much attention as a post-transition metal oxide used in active layer in thin-film transistor. Due to its high mobility fabricated at low temperature fabrication process, which is proper for application to display backplanes and use in flexible and/or transparent electronics. Electrical performance of amorphous oxide semiconductors depends on the resistance of the interface between source/drain metal contact and active layer. It is also affected by sheet resistance on IGZO thin film. Controlling contact/sheet resistance has been a hot issue for improving electrical properties of AOS(Amorphous oxide semiconductor). To overcome this problem, post-annealing has been introduced. In other words, through post-annealing process, saturation mobility, on/off ratio, drain current of the device all increase. In this research, we studied on the relation between device's resistance and post-annealing temperature. So far as many post-annealing effects have been reported, this research especially analyzed the change of electrical properties by increasing post-annealing temperature. We fabricated 6 main samples. After a-IGZO deposition, Samples were post-annealed in 5 different temperatures; as-deposited, $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, $400^{\circ}C$ and $500^{\circ}C$. Metal deposition was done on these samples by using Mo through E-beam evaporation. For analysis, three analysis methods were used; IV-characteristics by probe station, surface roughness by AFM, metal oxidation by FE-SEM. Experimental results say that contact resistance increased because of the metal oxidation on metal contact and rough surface of a-IGZO layer. we can suggest some of the possible solutions to overcome resistance effect for the improvement of TFT electrical performances.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.12
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• pp.6-13
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• 2009

For X-band phased array systems, a power amplifier, a 6-bit phase shifter, a 6-bit digital attenuator, and a SPDT transmit/receive (T/R) switch are fabricated and measured. All circuits are demonstrated by using CMOS 0.18 um technology. The power amplifier has 2-stage differential and cascade structures. It provides 1-dB gain-compressed output power ($P_{1dB}$) of 20 dBm and power-added-efficiency (PAE) of 19 % at 8-11 GHz frequencies. The 6-bit phase shifter utilizes embedded switched filter structure which consists of nMOS transistors as a switch and meandered microstrip lines for desired inductances. It has $360^{\circ}$ phase-control range and $5.6^{\circ}$ phase resolution. At 8-11 GHz frequencies, it has RMS phase and amplitude errors are below $5^{\circ}$ and 0.8 dB, and insertion loss of $-15.7\;{\pm}\;1,1\;dB$. The 6-bit digital attenuator is comprised of embedded switched Pi-and T-type attenuators resistive networks and nMOS switches and employes compensation circuits for low insertion phase variation. It has max. attenuation of 31.5 dB and 0.5 dB amplitude resolution. Its RMS amplitude and phase errors are below 0.4 dB and $2^{\circ}$ at 8-11 GHz frequencies, and insertion loss is $-10.5\;{\pm}\;0.8\;dB$. The SPDT T/R switch has series and shunt transistor pairs on transmit and receive path, and only one inductance to reduce chip area. It shows insertion loss of -1.5 dB, return loss below -15 dB, and isolation about -30 dB. The fabricated chip areas are $1.28\;mm^2$, $1.9mm^2$, $0.34\;mm^2$, $0.02mm^2$, respectively.

• Journal of radiological science and technology
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• v.31 no.4
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• pp.401-406
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• 2008

The aim of this study is to evaluate contra-lateral breast (CLB) surface dose in Field-in-Field (FIF) technique for breast conserving surgery patients. For evaluation of surface dose in FIF technique, we have compared with other techniques, which were open fields (Open), metal wedge (MW), and enhanced dynamic wedge (EDW) techniques under same geometrical condition and prescribed dose. The three dimensional treatment planning system was used for dose optimization. For the verification of dose calculation, measurements using MOSFET detectors with Anderson Rando phantom were performed. The measured points for four different techniques were at the depth of 0cm (epidermis) and 0.5cm bolus (dermis), and spacing toward 2cm, 4cm, 6cm, 8cm, 10cm apart from the edge of tangential medial beam. The dose calculations were done in 0.25cm grid resolution by modified Batho method for inhomogeneity correction. In the planning results, the surface doses were differentiated in the range of $19.6{\sim}36.9%$, $33.2{\sim}138.2%$ for MW, $1.0{\sim}7.9%$, $1.6{\sim}37.4%$ for EDW, and for FIF at the depth of epidermis and dermis as compared to Open respectively. In the measurements, the surface doses were differentiated in the range of $11.1{\sim}71%$, $22.9{\sim}161%$ for MW, $4.1{\sim}15.5%$, $8.2{\sim}37.9%$ for EDW, and 4.9% for FIF at the depth of epidermis and dermis as compared to Open respectively. The surface doses were considered as underestimating in the planning calculation as compared to the measurement with MOSFET detectors. Was concluded as the lowest one among the techniques, even if it was compared with Open method. Our conclusion could be stated that the FIF technique could make the optimum dose distribution in Breast target, while effectively reduce the probability of secondary carcinogenesis due to undesirable scattered radiation to contra-lateral breast.

• Journal of radiological science and technology
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• v.26 no.4
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• pp.39-46
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• 2003

Digital radiographic systems based on solid-state detectors, commonly referred to as flat-panel detectors, are gaining popularity in clinical practice. Large area, flat panel solid state detectors are being investigated for digital radiography. The purpose of this work was to evaluate the active matrix flat panel digital x-ray detectors in terms of their modulation transfer function (MTF), noise power spectrum (NPS), and detective quantum efficiency (DQE). In this paper, development and evaluation of a selenium-based flat-panel digital x-ray detector are described. The prototype detector has a pixel pitch of $139\;{\mu}m$ and a total active imaging area of $14{\times}8.5\;inch^2$, giving a total 3.9 million pixels. This detector include a x-ray imaging layer of amorphous selenium as a photoconductor which is evaporated in vacuum state on a TFT flat panel, to make signals in proportion to incident x-ray. The film thickness was about $500\;{\mu}m$. To evaluate the imaging performance of the digital radiography(DR) system developed in our group, sensitivity, linearity, the modulation transfer function(MTF), noise power spectrum (NPS) and detective quantum efficiency(DQE) of detector was measured. The measured sensitivity was $4.16{\times}10^6\;ehp/pixel{\cdot}mR$ at the bias field of $10\;V/{\mu}m$ : The beam condition was 41.9\;KeV. Measured MTF at 2.5\;lp/mm was 52%, and the DQE at 1.5\;lp/mm was 75%. And the excellent linearity was showed where the coefficient of determination ($r^2$) is 0.9693.