• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.2
• /
• pp.198-201
• /
• 2014

The phase frequency detector (PFD) is one of the most important building blocks of a phase locked Loop (PLL). Due to blind-zone problem, the detection range of the PFD is low. The blind zone of a PFD directly depends upon the reset time of the PFD and the pre-charge time of the internal nodes of the PFD. Taking these two parameters into consideration, a PFD is designed to achieve a small blind zone closer to the limit imposed by process-voltage-temperature variations. In this paper an enhanced architecture is proposed for dynamic logic PFD to minimize the blind-zone problem. The techniques used are inverter sizing, transistor reordering and use of pre-charge transistors. The PFD is implemented in 180 nm technology with supply voltage of 1.8 V.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.13 no.6
• /
• pp.576-580
• /
• 2013

We investigate the enhanced effects of asymmetry ratio variations of the source and drain area in silicon (Si) field-effect transistor (FET). Photoresponse according to the variation of asymmetry difference between the width of source and drain are obtained by using the plasmonic terahertz (THz) wave detector simulation based on technology computer-aided design (TCAD) with the quasi-plasma 2DEG model. The simulation results demonstrate the potential of Si FETs with asymmetric source and drain structures as the promising plasmonic THz detectors.

• Journal of information and communication convergence engineering
• /
• v.4 no.2
• /
• pp.92-96
• /
• 2006

Hardware for monitoring the water quality using water fleas is developed. Water flea is a frequently used biological sensor for monitoring the water quality. Water fleas quickly respond to the incoming toxic water by changing their activity when they are exposed. By measuring the activity of water fleas, the incoming toxic water is instantly detected. So far the measurement of activity of water fleas has been done with a system equipped with both a light source of LED and a light detector of photo transistor. Water flea itself is, however, sensitive to light resulting in incorrect response and the system has two inconvenient separate parts of the light source and the detector. This paper suggests a system using a CCD camera instead of a light source and a detector. The suggested system processes the image data from the CCD camera in real time without any delay. The developed system becomes a part of the remote water monitoring embedded system.

• Journal of the Korean Society of Radiology
• /
• v.16 no.7
• /
• pp.969-974
• /
• 2022

In order to maximize dynamic range and to minimize image lag in digital X-ray imaging, diminishing residual parasitic capacitance in photodiode in pixels is critically necessary. These requirements are more specifically requested in dynamic X-ray imaging with high frame rate and low image lag for industrial 2D/3D automated X-ray inspection and medical CT imaging. This study proposes duoPIX^TM X-ray imaging sensor for the first time that is composed of reset thin film transistor, readout thin film transistor and photodiode in a pixel. To verify duoPIX^TM X-ray imaging sensor, designing duoPIX^TM pixel and imaging sensor was executed first then X-ray imaging sensor with 105 ㎛ pixel pitch, 347 mm × 430 mm imaging area and 3300 × 4096 pixels (13.5M pixels) was fabricated and evaluated by using module tester and image viewer specifically for duoPIX^TM imaging sensor.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
• /
• v.9 no.1
• /
• pp.120-131
• /
• 2016

In this paper, a 512b MTP memory IP is designed by using MTP memory cells which are written by the FN (Fowler-Nordheim) tunneling method with only MV (medium voltage) devices of 5V which uses the back-gate bias, that is VNN (negative voltage). The used MTP cell consists of a CG (control gate) capacitor, a TG (tunnel gate) transistor, and a select transistor. To reduce the size of the MTP memory cell, just two PWs (P-wells) are used: one for the TG and the select transistors; and the other for the CG capacitor. In addition, just one DNW (deep N-well) is used for the entire 512b memory cell array. VPP and VNN generators supplying pumping voltages of ${\pm}8V$ which are insensitive to PVT variations since VPP and VNN level detectors are designed by a regulated voltage, V1V (=1V), provided by a BGR voltage generator.

• Korean Journal of Digital Imaging in Medicine
• /
• v.6 no.1
• /
• pp.24-30
• /
• 2003

Flat-panel detector(FPD) is the driving force for realizing the next gene ration of x-ray system. In this study, we developed amorphous selenium(a-Se) based flat-panel digital X-ray detector(DXD) for radiography. The prototype detector consists of an amorphous selenium layer and a thin-film transistor(TFT) array. Comparing to other papers1)-4), optimization of amorphous selenium and progress of evaporation were similar. The pixel pitch of fabricated detector was $139{\mu}m$, fill factor was 86%, and the size was 14"${\times}$8.5". Hand and test bar pattern images were acquired. A high modulation transfer function(MTF) factor was obtained: 58% at 3.0 lp/mm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.11a
• /
• pp.388-391
• /
• 2003

The properties of these detectors can be controlled by electronics and exposure conditions. Flat-panel detectors for digital diagnostic imaging convert incident x-ray images to charge images. Flat panel detectors gain more interest real time medical x-ray imaging. Active area of flat panel detector is $14{\times}17$ inch. Detector is based on a $2560{\times}3072$ away of photoconductor and TFT pixels. X-ray conversion layer is deposited upper TFT array flat panel with a 500m by thermal deposition technology. Thickness uniformity of this layer is made of thickness control technology(5%) of thermal deposition system. Each $139m{\times}139m$ pixel is made of thin film transistor technology, a storage capacitor and charge collection electrode having geometrical fill factor of 86%. Using the separate driving system of two dimensional mosaic modules for large area, that is able to 4.2 second per frame. Imaging performance is suited for digital radiography imaging substitute by conventional radiography film system..

• Proceedings of the KIPE Conference
• /
• 2007.07a
• /
• pp.138-140
• /
• 2007

A novel AC-DC switching technology is suggested without inductors for one-chip semiconductor. The suggested converter consists of a rectifier diodes, AC source level detector, switching control, detector of over-current and voltage, feedback controller and switching block, The key technology of the proposed AC-DC converting methode is detecting of the low level voltage for AC voltage, power control transistor and rectifying of DC level. The measurement results with commercial devices show that the converter has power efficiency of 66.5% for DC 12V 0.24A and the standby power is 49.58mW at AC 110V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.817-820
• /
• 2002

Amorphous selenium based flat panel detectors convert incident x-ray to electric signal directly. Flat panel detectors gain more interest real time medical x-ray imaging. TFT array and electric readout circuits are used in this paper offered by LG.Philips.LCD. Detector is based on a $1536{\times}1280$ array of a-Si TFT pixels. X-ray conversion layer(a-Se) is deposited upper TFT array with a $400{\mu}m$ by thermal deposition technology. Thickness uniformity of this layer is made of thickness control system technology$({\leq}5%)$. Each $139{\mu}m{\times}139{\mu}m$ pixel is made of thin film transistor technology, a storage capacitor and collecting electrode having geometrical fill factor of 86%. This system show dynamic performance. Imaging performance is suited for digital radiography imaging substitute by conventional radiography film system.

• Journal of Biomedical Engineering Research
• /
• v.29 no.5
• /
• pp.392-399
• /
• 2008

Thin-film transistor (TFT) arrays for an x-ray detector require quite different design concept from that of the conventional active-matrix liquid crystal devices (AM-LCDs). In this paper anew design of TFT array which uses only SiNx for passivation layer is described to meet the detector performance and the product availability simultaneously. For the purpose of optimizing the design parameters of the TFT array, a Spice simulation was performed. As a result, some parameters, such as the TFT width, the data line capacitance, and the storage capacitance, were able to be fixed. The other parameters were decided within a permissible range of the TFT process especially the photolithography process and the wet etch process. Then we adapted the TFT array which had been produced by the proposed design to our prototype model (FDXD-1417 and evaluated it clinically by comparing with a commercial model (EPEX, Hologic, Beford, USA). The results say that our prototype model is slightly better than EPEX system in chest PA images. So we can prove the technical usefulness and the commercial values of the proposed TFT design.