• Current Optics and Photonics
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• v.2 no.6
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• pp.499-507
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• 2018

For the spatiotemporally aligned observation of photothrombosis induction and transient variations of in vivo brain stroke, we developed a novel photothrombosis inducing system compatible to a magnetic resonance imaging (MRI) system using nonmagnetic stereotaxic equipment. From the spatial point of view, the system provides a more reliable level of reproducibility of the photothrombosis in each brain. From the temporal point of view, from T1- and T2-weighted in vivo MR (magnetic resonance) images, the transient variations such as incidence, location, and size of the thrombosis are measured quantitatively. In addition, the final variation is observed in the ex vivo brain by TTC (Triphenyltetrazolium chloride) staining based on histological assay and utilized for the verification of the MR images. From the experimental result of the rat brain, the proposed system shows more reliable characteristics for transient variations of brain strokes.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.2
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• pp.13-28
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• 2021

Since transient electronic devices can operate under harsh conditions such as electrolytic solutions or inside the body, and be removed by hydrolysis after operation, they can replace conventional electronic devices in various research areas like biomedical implantable devices. Moreover, transient electronic devices that can dissolve in water and enzymes are the focus of the new concept of green technology, which can solve electrical waste issues. However, the surroundings of transient electronic devices can deteriorate internal device components. Thus, an encapsulation strategy is introduced for stable operation in solution by shielding the outside of a device with a passive barrier. This article summarizes recent research trends in transient electronic devices, including their background, dissolution behavior, and encapsulation strategies to enhance reliability by blocking water permeation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.1
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• pp.1-12
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• 2001

Based on mixed-mode transient analyses utilizing a 2-dimensional device simulator, we have suggested the methodology to analyze the HBM ESD phenomena in CMOS chips utilizing NMOS transistors for ESD protection, and have analyzes the HBM discharge mechanisms in detail. Also the second breakdown characteristics in the protection device have been successfully simulated based on mixed-mode simulations, to explain the discharge mechanisms leading to device failure. To analyze the effects of the device structure changes on the discharge characteristics, we have compared the results of DC analyses and mixed-mode transient analyses, and have discussed about more robust designs of NMOS transistor structures against HBM ESD based on the analyses.

• International Journal of Contents
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• v.2 no.3
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• pp.6-10
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• 2006

Small molecule OLED devices were fabricated and the electro-optical characteristics were analyzed. The luminance and color coordinate of the fabricated OLED device were $24,390cd/m^2$ and (x=0.15, y=0.22), respectively. Current efficiency of 6.8 cd/A and power efficiency of 2.4 lm/W were also obtained under DC operating condition. Transient light intensity was also measured by using Si photodiode.

• Journal of Aerospace System Engineering
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• v.4 no.1
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• pp.32-37
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• 2010

Guided weapon is very excellent strategy system than conventional weapons. Recently, several devices and a technology developed much developing more, inertia measuring device is one example. Inertia measuring device is device that is used to improe more accuracy of guided weapon, this device is operated by sensors of inside. Sensors of inside are parts that is very sensitive about impact or shock, heat that interact when shoot, it is main purpose that verify durability of sensor by heat delivered from outside in this study.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.3
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• pp.422-426
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• 2012

Transient radiation is emitted during a nuclear explosion. Transient radiation causes a fatal error in the CMOS circuit as a Upset and Latch-up. In this paper, transient radiation NMOS, PMOS, INVERTER SPICE model was proposed on the basisi of transient radiation effects analysis using TCAD(Technology Computer Aided Design). Photocurrent generated from the MOSFET internal PN junction was expressed to the current source and Latch-up phenomenon in the INVERTER was expressed to parasitic thyristor for the transient radiation SPICE model. For example, the proposed transient radiation SPICE model was applied to CMOS NAND circuit. SPICE simulated characteristics were similar to the TCAD simulation results. Simulation time was reduced to 120 times compared to TCAD simulation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.352-352
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• 2010

Silicon Carbide (SiC) power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. In this paper, we report the effect of the P-base doping concentration ($N_{PBASE}$) on the transient characteristics of 4H-SiC DMOSFETs. By reducing $N_{PBASE}$, switching time also decreases, primarily due to the lowered channel resistance. It is found that improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the and channel resistance. Therefore, accurate modeling of the operating conditions are essential for the optimization of superior switching performance.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.2
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• pp.79-99
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• 2010

Pulsed current-voltage (I-V) methods are introduced to evaluate the impact of fast transient charge trapping on the performance of high-k dielectric transistors. Several pulsed I-V measurement configurations and measurement requirements are critically reviewed. Properly configured pulsed I-V measurements are shown to be capable of extracting such device characteristics as trap-free mobility, trap-induced threshold voltage shift (${\Delta}V_t$), as well as effective fast transient trap density. The results demonstrate that the pulsed I-V measurements are an essential technique for evaluating high-$\kappa$ gate dielectric devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.153-156
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• 2005

In this study, we have investigated transient properties of top emission organic light emitting diode (OLED) with a red electrophosphorescent dopant. The emission spectrum shows a strong peak at 620 nm accompanied with a small peak at 675 nm in the red region. Time evolution of electrophosphorescence reveals a decay time of 703 ms at a voltage pulse of 5 V in a device with an emitting area of 20 $mm^2$. Rise and delay times vary from 450 to 14 ms and 73 to 3 ms, respectively, as the voltage amplitude increases from 4.5 to 10 V. These results are compared with the red emitting device without an electron injection layer.

• Nuclear Engineering and Technology
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• v.53 no.6
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• pp.1747-1755
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• 2021

This paper presents floating absorber for safety at transient (FAST) which is a passive safety device for sodium-cooled fast reactors with a positive coolant temperature coefficient. Working principle of the FAST makes it possible to insert negative reactivity passively in case of temperature rise or voiding of coolant. Behaviors of the FAST in conventional oxide fuel-loaded and metallic fuel-loaded SFRs are investigated assuming anticipated transients without scram (ATWS) scenarios. Unprotected loss of flow (ULOF), unprotected loss of heat sink (ULOHS), unprotected transient overpower (UTOP) and unprotected chilled inlet temperature (UCIT) scenarios are simulated at end of life (EOL) conditions of the oxide and the metallic SFR cores, and performance of the FAST to improve the reactor safety is analyzed in terms of reactivity feedback components, reactor power and maximum temperatures of fuel and coolant. It is shown that FAST is able to improve the safety margin of conventional burner-type SFRs during ULOF, ULOHS, UTOP and UCIT.