• 대한치과보철학회지
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• 제38권2호
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• pp.178-190
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• 2000

The purpose of this study was to evaluate the surface roughness of Ni-Cr-Be alloy($Verabond^{(R)}$, Aalba Dent Inc., USA) according to electrolyte concentration and etching time. Total of 150 metal specimens ($12{\times}10{\times}1.5mm$) composed of 5 polisded specimens, 5 sandblasted specimens, 140 etched specimens were prepared. Etched groups were divided into 28 groups by the $HClO_4$ concentrations(10, 30, 50, 70%) and etching times(15, 30, 60, 120, 180, 240, 300 seconds). The mean surface roughness(Ra) and the etching depth were measured with Optical 3-dimensional surface roughness measuring machine(Accura 1500M, Intek Engineering Co., Korea) and observed under SEM. The results obtaind were as follows: 1. Surface roughness(Ra) and etching depth were affected by the order of etching time, electrolyte concentration, and their interaction(P<0.05). 2. Surface roughness(Ra) and etching depth were increased with etching time in 10%, 30% electrolyte concentrations, but they had no significant difference with etching time in 70% (P<0.05). 3. Surface roughness(Ra) and etching depth decreased in the order of 30, 10, 50, 70% electrolyte concentrations from 120 seconds etching time(P<0.05). 4. The remarkable morphologic changes in etched surface were observed along the grain boundaries in 15, 30 seconds of 10%, 30% concentrations and the morphologic changes could be denoted in the grains themselves as well as along the boundaries with the lapse of time. Even though the noticeable morphologic changes also took place in etched surface with 50% concentration, the degree of changes were less than that of changes with 10%, 30%. However, there were little morphologic changes with 70% concentration regardless of etching time. 5. Surface roughness(Ra) of sandblasting group with $50{\mu}m\;Al_2O_3$ had no significant difference with 30%-30 seconds etched group(P<0.05).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.124-125
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• 2005

ZnS:Mn thin films have attracted great interest as electroluminescence devices. In this study, inductively coupled BCl$_3$/Ar plasma was used to etch ZnS:Mn thin films. We obtained the maximum etch rate of ZnS:Mn thin films was 2209 ${\AA}$/min at a BCl$_3$(20%)/Ar(80%) gas mixing ratio, an RF power of 700 W, a DC bias voltage of-250 V, a total gas flow of 20 sccm, and a chamber pressure of 1 Pa. It was proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

• 한국전기전자재료학회논문지
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• 제16권4호
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• pp.286-291
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• 2003

(Pb,Sr)TiO$_3$(PST) thin films have attracted great interest as new dielectric materials of capacitors for Gbit dynamic random access memories. In this study, inductively coupled CF$_4$/Ar plasma was used to etch PST thin films. The maximum etch rate of PST thin films was 740 $\AA$/min at a CF$_4$(20 %)/Ar(80 %) 9as mixing ratio, an RF power of 800 W, a DC bias voltage of -200 V, a total gas flow of 20 sccm, and a chamber pressure of 15 mTorr. To clarify the etching mechanism, the residue on the surface of the etched PST thin films was investigated by X-ray photoelectron spectroscopy. It was found that Pb was mainly removed by physically assisted chemical etching. Sputter etching was effective in the etching of Sr than the chemical reaction of F with Sr, while Ti can almost removed by chemical reaction.

• Restorative Dentistry and Endodontics
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• 제36권5호
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• pp.385-396
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• 2011

연구목적: 본 연구는 치근벽의 전처리 개념과 접착제의 중합방법이 레진계 근관충전제의 치근단 밀폐능에 미치는 영향을 평가하였다. 연구 재료 및 방법: 3가지 다른 접착변수를 조합하여 충전한 Resilon-RealSeal 시스템의 근단미세누출을 색소침투법을 이용하여 통상의 가타퍼쳐 충전과 비교하였다. 실험군은 자가부식형 RealSeal primer와 이중중합형 RealSeal sealer를 이용하여 Resilon 충전한 SEDC군, 산부식없이 Scotchbond Multi-Purpose primer를 적용한 후 접착제는 광중합하고 Resilon을 충전한 NELC군, 및 Scotchbond Multi-Purpose의 접착강화제와 접착제를 total etch/wet bonding과 광중합의 술식을 정확하게 지켜서 Resilon을 충전한 TELC군으로 구분하였다. 대조군(GPCS)에서는 통상의 AH26 plus sealer를 사용하여 가타퍼쳐를 충전 하였다. 결과: 치아장축방향의 색소침투는 TELC군에서 GPCS군과 SEDC군에 비해 유의하게 작았다(Kruskal-Wallis test, p < 0.05). 횡단면의 미세누출 점수도 TELC군이 근첨으로부터 2 - 5 mm의 범위에서 다른 군에 비해 유의하게 낮았다(Kruskal-Wallis test, p < 0.05). 결론: 레진계 근관충전제를 사용 시에는, 자가부식형 전처리제와 이중중합형 sealer보다는, total etch/wet bonding 개념과 적절한 광중합을 도모하는 전처리제 및 접착제의 사용이 치근단 미세누출을 감소시키므로 추천된다.

• Restorative Dentistry and Endodontics
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• 제37권4호
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• pp.207-214
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• 2012

Objectives: This study evaluated the influence of chlorhexidine (CHX) on the microtensile bonds strength (${\mu}TBS$) of resin core with two adhesive systems to dentin in endodontic cavities. Materials and Methods: Flat dentinal surfaces in 40 molar endodontic cavities were treated with self-etch adhesive system, Contax (DMG) and total-etch adhesive system, Adper Single Bond 2 (3M ESPE) after the following surface treatments: (1) Priming only (Contax), (2) CHX for 15 sec + rinsing + priming (Contax), (3) Etching with priming (Adper Single Bond 2), (4) Etching + CHX for 15 sec + rinsing + priming (Adper Single Bond 2). Resin composite build-ups were made with LuxaCore (DMG) using a bulk method and polymerized for 40 sec. For each condition, half of specimens were submitted to ${\mu}TBS$ after 24 hr storage and half of them were submitted to thermocycling of 10,000 cycles between $5^{\circ}C$ and $55^{\circ}C$ before testing. The data were analyzed using ANOVA and independent t-test at a significance level of 95%. Results: CHX pre-treatment did not affect the bond strength of specimens tested at the immediate testing period, regardless of dentin surface treatments. However, after 10,000 thermocycling, all groups showed reduced bond strength. The amount of reduction was greater in groups without CHX treatments than groups with CHX treatment. These characteristics were the same in both self-etch adhesive system and total-etch adhesive system. Conclusions: 2% CHX application for 15 sec proved to alleviate the decrease of bond strength of dentin bonding systems. No significant difference was shown in ${\mu}TBS$ between total-etching system and self-etching system.

• Restorative Dentistry and Endodontics
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• 제21권1호
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• pp.136-149
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• 1996

The effects of various All-Etching Agents (10% phosphoric acid, 10% maleic acid and 10 % citric acid) and 32 % phosphoric acid and varied etching time were evaluated by observing the morphology of the etched enamel surfaces using Scanning electron microscopy and by measuring the shear bond strength of a composite resin to human enamel. A total of 156 extracted premolar and molar teeth free of irregularities were employed in this study. Specimens for the observation of enamel morphology were divided into 12 groups of 3 teeth each, based on the type of etchant used and application time. After exposure to the etching agent specimens were washed air-dried and then glued to aluminum stubs and coated with a layer of gold for examination in the scanning electron microscope. Specimens for the evaluation of bond strength were divided into 12 groups of 10 teeth each also based on the type of etchant used and application time. After exposure to the etching agent the specimens were washed, air-dried and a thin layer of bonding agent was applied using a brush. Z 100 composite resin was light cured to the surface and stored at $37^{\circ}C$, 100% humidity for 7 days. An Instron Universal Testing Machine was used to apply a shearing force at $90^{\circ}$ angle from the enamel surface. It is concluded from this study that commercial All-etching agents can be used with a 15-second etching without adversely affecting retention of dental resin materials. At the same time, the acid concentration is probably a suitable compromise regarding the acid's function as a dentin demineralizing all-etch conditioning agent. The following results were obtained. 1. Specimens etched with 10 % citric acid showed a random superficial etching pattern which could not be related to prism morphology. 2. Specimens etched with 10 % and 32 % phosphoric acid and 10 % maleic acid showed a type I pattern in which core material was preferentially removed leaving the prism peripheries relatively intact or a type II pattern in which prism peripheries were preferentially removed. This delineation became more distinguished as etching time was increased. 3. All-Etching Agents and 32 % phosphoric acid showed a statistically significant higher shear bond strength at 15 seconds etching time.(p<0.05) 4. 10 % maleic acid and 32 % phosphoric acid exhibited a statistically significant higher shear bond strength than 10 % phosphoric and citric acid at 15 seconds etching time.(p<0.05).

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.65-65
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• 1999

Dry etching technique provides more easy controllability on the etch profile such as anisotropic etching than wet etching process and the results of lots of researches on the characterization of various plasmas or ion beams for semiconductor etching have been reported. Chlorine-based plasmas or chlorine ion beam have been often used to etch several semiconductor materials, in particular Si-based materials. We have studied the effect of He flow rate on the Si and SiO2 dry etching using chlorine-based plasma. Experiments were performed using reactive ion etching system. RF power was 300W. Cl2 gas flow rate was fixed at 58.6 sccm, and the He flow rate was varied from 0 to 120 sccm. Fig. 1 presents the etch depth of si layer versus the etching time at various He flow rate. In case of low He flow rate, the etch rate was measured to be negligible for both Si and SiO2. As the He flow increases over 30% of the total inlet gas flow, the plasma state becomes stable and the etch rate starts to increase. In high Ge flow rate (over 60%), the relation between the etch depth and the time was observed to be nearly linear. Fig. 2 presents the variation of the etch rate depending on the He flow rate. The etch rate increases linearly with He flow rate. The results of this preliminary study show that Cl2/He mixture plasma is good candidate for the controllable si dry etching.

• 멤브레인
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• 제23권1호
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• pp.92-99
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• 2013

본 연구는 인쇄회로기판(PCB) 제조 시 에칭공정에서 발생되는 구리이온($Cu^{+2}$)을 고농도로 함유한 황산 폐에칭액을 NF 막분리법을 사용하여 에칭액 회수와 구리이온 처리를 효율적으로 수행하기 위한 NF 막여과 공정의 운전 조건을 설정하기 위한 기본 자료를 확보하는데 있다. 이를 위해 미국 Koch사의 SelRO MPS-34 4040 NF 막을 대상으로 구리이온을 고농도(5~25 g/L)로 함유한 모의 황산 폐에칭액의 회분식(dead-end) 나노여과 실험을 수행하여 투과 플럭스와 구리이온의 총괄 배제도를 측정하였다. 이 결과 황산용액에의 막 보관기간이 길수록, 황산용액의 pH가 낮을수록 황산에 의한 NF 막의 손상이 더 크게 발생하여 순수 투과 플러스가 증가하였다. 황산 폐에칭액의 투과 플럭스는 황산용액 내 구리이온의 농도가 증가할수록 막 표면에의 구리이온 농축(농도분극)의 증가에 따라 감소하였으며, 구리이온의 배제도는 구리이온의 농도가 높을수록, pH가 낮을수록, 황산용액 내의 막 보관기간이 길수록 낮아져 초기 37%에서 최소 15% 수준으로까지 감소하였다.

• 한국표면공학회지
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• 제30권1호
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• pp.44-56
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• 1997

Influence of electrochemical etching conditions on capacitance gain of aluminium electrolytic on capacitor foil has been investigated by etching cubic textured high purity aluminum foil in dilute hydrochloric acid. Uniformly distributed etch pit tunnels on aluminum surface have been obtained by pretreatment aluminium foil in 10% NaOH solution for 5 minutes followed by electrochemical etching. Electrostatic capacitance of etched aluminium foil anodized to high voltage increased with the increase of current density, total charge, temperature and concentration of electrolyte up to maximum CV-value and then deceased. Election optical observation of the etched foil revealed that the density of etch of etch pits increased with the increase of current density and concentration of electrolyte. this increase of etch pit density enlarged of the increase of capacitance. However, abnormal high current density and high electrolyte concentration induced the local dissolution of the foil surface which resulted the decrease of foil capacitance.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권2호
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• pp.62-66
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• 2004

This paper investigated the characteristics of a newly developed high density hollow cathode plasma (HCP) system and its application for the etching of silicon wafers. We used SF$_{6}$ and $O_2$ gases in the HCP dry etch process. Silicon etch rate of $0.5\mu\textrm{m}$/min was achieved with $SF_6$$O_2$plasma conditions having a total gas pressure of 50mTorr, and RF power of 100 W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. The results of this experiment can be used for various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications.s.