• Proceedings of the KIEE Conference
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• 2005.05a
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• pp.281-283
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• 2005

Processing Plasmas are very sensitive to a variation in process parameters, To maintain process quality and device field, plasma malfunction should be tightly monitored with high sensitivity. A new monitoring method is presented and this was accomplished by applying discrete wavelet transformation to X-ray photoelectron spectroscopy. XPS data were collected during a plasma etching of silicon carbide. Various effects of DWT factor on fault sensitivity were optimized experimentally. Compared to raw data, total percent sensitivity for DWT data demonstrated a significantly improved sensitivity to plasma faults induced by bias power.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.11 s.176
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• pp.173-181
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• 2005

We report on the design and fabrication of an electrostatic 2-axis MEMS stage possessing a platform with a size of $5{times}5mm^2$. The stage, as a key component, would be used in developing probe-based storage devices in the future. It was fabricated by forming numerous $5{\times}5{\mu}m^2$ etching holes in the central platform, as a result, reducing the total number of masks to 1, thereby simplifying the whole fabrication process. Experimental results show that the driving range of the stage was $32{\mu}m$ at the supplied voltage of 20V and the natural frequency was approximately 300Hz. The mechanical coupling between x- and y-motion was also measured and verified to be $25\%$.

• Proceedings of the KACD Conference
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• 2001.11a
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• pp.560.1-560
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• 2001

To evaluate the micro-shear bond strength of current adhesive systems to cervical and mid-coronal enamel. Materials and Two commercially available resin adhesives were investigated; a self-etching primer system(Clearfil SE Bond, Kyraray) and a one-bottle adhesive system(Single Bond, 3M) intended for use with the total-etch wet-bonding technique were employed. Two regions of enamel, cervical and mid-coronal regions, were chosen from the buccal surface of extracted molars and were then bonded with each adhesive system and submitted to the micro-shear bond test.(중략)

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.338-344
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• 1996

This study was an investigation of plasma-induced damages on silicon substrate in the semiconductor manufacturing technology. The plasma-induced damage level on silicon substrate was analyzed and compared in various plasma etching systems. The analysis methods were therma wave, life-time recovery, SCA (Surface Charge Analyzer) and TRXF (Total Reflection X-ray Fluorescence) measurements, and the measured values were compared for each systems. In the comparison of the values which were obtained by a system that had low life-time recovery, there was not any differences in DC parameters. However, the reflesh time distribution of device of that system had decreased about 10 to 20m sec compared to a system which had high life-time recovery.

• Journal of Korea Foundry Society
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• v.25 no.3
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• pp.134-141
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• 2005

To overcome the undesirable deformation, peeling off and geometrical restrictions which were mainly caused by differences in thermal expansion coefficients during the cladding of aluminum strip and stainless strip, new processing method based on vacuum die casting is designed and implemented in fabricating Al/Fe-17wt%Cr steel(stainless steel). To increase cast-bonding ability, the surface of Fe-17wt%Cr steel is electrochemically etched to have optimum pit size and density. The optimum conditions to generate best pit are as follows: Solution: 1 M $Fecl_{3}$+1 M Nacl, Addition: $CuCl_{2}+HCl$, Current density: 80 $mA/cm^{2}$, Total current: 400 $coulomb/cm^{2}$, AC frequency :60 Hz.

• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.130-137
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• 1995

Deopsition of thermal quality SiO2 using a high density plasma ECR CVD process has been demonstrated to give void and seam free gap fill of high aspect ratio metallization structures with a simple oxygen-silane chemistry. This is achieved by continuous sputter etching of the film during the deposition process. A two-step process is utilized to deposit a composite layer for higher manufacturing efficiency. The first step, which has a deposition rate of approximately 0.5 $\mu$m/min., is used to provide complete gap fill between the metal lines. The second step, which has a deposition rate of up to 1.5 $\mu$m/min., is used to deposit a total thickness of 2.0$\mu$m for the intermetal dielectric film. The topography of this composite film is very compatible with subsequent chemicl mechanical polishing(CMP) planarization processing.

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.85-91
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• 2009

There has been a rapid progress for flexible polymer-based MEMS(Microelectromechanical Systems) technology. Polycarbonate (PC) and Poly Methyl Methacrylate (PMMA), so-called acrylic, have many advantages for optical, non-toxic and micro-device application. We studied dry etching of PC and PMMA as a function of % gas ratio in the $O_2/SF_6/CH_4$ temary plasma. A photoresist pattern was defined on the polymer samples with a mask using a conventional lithography. Plasma etching was done at 100 W RIE chuck power and 10 sccm total gas flow rate. The etch rates of PMMA were typically 2 times higher than those of PC in the whole experimental range. The result would be related to higher melting point of PC compared to that of PMMA. The highest etch rates of PMMA and PC were found in the $O_2/SF_6$ discharges among $O_2/SF_6$, $O_2/CH_4$ and $SF_6/CH_4$ and $O_2/SF_6/CH_4$ plasma composition (PC: ${\sim}350\;nm/min$ at 5 sccm $O_2/5$ sccm $SF_6$, PMMA: ${\sim}570\;nm/min$ at 2.5 sccm $O_2/7.5$ sccm $SF_6$). PC has smoother surface morphology than PMMA after etching in the $O_2/SF_6/CH_4$ discharges. The surface roughness of PC was in the range of 1.9$\sim$3.88 nm. However, that of PMMA was 17.3$\sim$26.1 nm.

• Restorative Dentistry and Endodontics
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• v.34 no.5
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• pp.397-405
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• 2009

This study compared the effect of an activator, intermediate bonding resin and low-viscosity flowable resin on the microtensile bond strength of a self-curing composite resin used with two-step total etching adhesives. Twenty extracted permanent molars were used. The teeth were assigned randomly to nine groups (n=10) according to the adhesive system and application of additional methods (activator, intermediate adhesive, flowable resin). The bonding agents and additional applications of each group were applied to the dentin surfaces. Self-curing composite resin buildups were made for each tooth to form a core, 5mm in height. The restored teeth were then stored in distilled water at room temperature for 24h before sectioning. The microtensile bond strength of all specimens was examined. The data was analyzed statistically by one-way ANOVA and a Scheffe's test. The application of an intermediate bonding resin (Optibond FL adhesive) and low-viscosity flowable resin (Tetric N-flow) produced higher bond strength than that with the activator in all groups. Regardless of the method selected, Optibond solo plus produced the lowest ${\mu}TBS$ to dentin. The failure modes of the tested dentin bonding agents were mostly adhesive failure but there were some cases showed cohesive failure in the resin.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.490-495
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• 1999

In 0.18 $\mu \textrm m$ LOGIC device, the etch rate of NMOS polysilicons is different from that of PMOS polysilicons due to the state of polysilicon to manufacture gate line. To control the etch profile, we tested the ratio of $Cl_2$/HBr gas and the total chamber pressure, and also we reduced Back He pressure to get the vertical profile. In the case of manufacturing the gate photoresist line, we used Bottom Anti-Reflective Coating (BARC) to protect refrection of light. As a result we found that $CF_4O_2$ gas is good to etch BARC, because of high selectivity and good photoresist line profile after etching BARC. in the results of the characterization of plasma damage to the antenna effect of gate oxide, NO type thin film(growing gate oxide in 0, ambient followed by an NO anneal) is better than wet type thin film(growing gate oxide in $0_2+H_2$ ambient).

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.3
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• pp.1707-1710
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• 2014

This paper is the study for the directional solidification of the ingot through the thermal analysis simulation and structural change of casting furnace. The activation analysis of metal impurities were also detected the total number of 10 different metals, but the concentration distribution showed no significant positional deviations in the same position from the top to the bottom. With the results of thermal analysis simulation, the silicon as a whole has reached the melting temperature as the retention time 80 min. The best cooling conditions showed at the upper cooling temperature $1,400^{\circ}C$ and cooling time 60min. The fabricated wafers showed the superior etching result at the grain boundary than that of existing commercial wafers.