• Electrical & Electronic Materials
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• v.7 no.3
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• pp.231-235
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• 1994

The multi-dielectric layer $SiO_2$/$Si_3{N_4}$/$SiO_2$ (ONO) is used to improve charge retention and to scale down the memory device. The nitride layer of MNOS device is oxidize to form ONO system. During the oxidation of the nitride layer, the change of thickness of nitride layer and generation of interface state between nitride layer and top oxide layer occur. In this paper, effects of oxidation of the nitride layer is studied. The decreases of the nitride layer due to oxidation and trapping characteristics of interface state of multi layer dielectric film are investigated through the C-V measurement and F-N tunneling injection experiment using SONOS capacitor structure. Based on the experimental results, carrier trapping model for maximum flatband voltage shift of multi layer dielectric film is proposed and compared with experimental data. As a results of curve fitting, interface trap density between the top oxide and layer is determined as being $5{\times}10^11$~$2{\times}10^12$[$eV^1$$cm^2$].

• Journal of the Semiconductor & Display Technology
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• v.16 no.2
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• pp.44-48
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• 2017

We explain optical and electrical properties of top and bottom-emission structured alternating-current powder electroluminescent devices (ACPELDs) with Ga-doped ZnO(GZO) transparent electrode. The top-emission ACPELDs were layered as the metal electrode/dielectric layer/emission layer/top transparent electrode and the bottom-emission ACPELDs were structured as the bottom transparent electrode/emission layer/dielectric layer/metal electrode. The yellow-emitting ZnS:Mn, Cu phosphor and the barium titanate dielectric layers were layered through the screen printing method. The GZO transparent electrode was deposited by the sputtering, its sheet resistivity is $275{\Omega}/{\Box}$. The transparency at the yellow EL peak was 98 % for GZO. Regardless of EL structures, EL spectra of ACPELDs were exponentially increased with increasing voltages and they were linearly increased with increasing frequencies. It suggests that the EL mechanism was attributed to the impact ionization by charges injected from the interface between emitting phosphor layer and the transparent electrode. The top-emission structure obtained higher EL intensity than the bottom-structure. In addition, charge densities for sinusoidal applied voltages were measured through Sawyer-Tower method.

• ETRI Journal
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• v.43 no.5
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• pp.923-931
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• 2021

We studied the influence of GaAs top-layer thickness on the small-signal modulation response and 56 Gb/s four-level pulse-amplitude modulation eye quality of 850 nm vertical-cavity surface-emitting lasers (VCSELs). We considered the proportionality of the gain-saturation coefficient to the photon lifetime. The simulation results that employed the transfer-matrix method and laser rate equations led to the conclusion that the proportionality should be considered for proper explanation of the experimental results. From the obtained optical eyes, we could determine an optimum thickness of the GaAs top layer that rendered the best eye quality of VCSEL. We also compared two results: one result with a fixed gain-saturation coefficient and the other that considered the proportionality. The former result with the constant gain-saturation coefficient demonstrated a better eye quality and a wider optimum range of the GaAs top-layer thickness because the resultant higher damping reduced the relaxation oscillation.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.714-716
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• 2002

Indium tin oxide (ITO) was used as the top anode of top emission inverted organic light emitting diodes (TEIOLEDs). TEIOLEDs were fabricated by deposition of an aluminum bottom cathode, an N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1, 1'-diphenyl-4, 4 1'-diamine (TPD) hole transport layer, a tris-8-hydroxyquinoline aluminum ($Alq_3$) emission layer, and an ITO top anode sequentially. ITO was deposited by r.f. magnetron sputtering without $O_2$ flow during the deposition. After the deposition, the deposited ITO layer was kept under oxygen atmosphere for the oxidation. The characteristics of the TEOILED were affected significantly by the post-deposition oxidation condition.

• Corrosion Science and Technology
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• v.15 no.5
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• pp.209-216
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• 2016

In the present study, chitosan based self-healing anticorrosion coatings were prepared by layer by layer (lbl) addition of chitosan (Ch) and polyvinyl butyral (PVB) on mild carbon steel substrate. Chitosan coatings exhibited enhanced coating stability and corrosion resistance in aggressive environments by the application of a PVB top layer. Chitosan layer in the lbl coatings have been modified by using glutaraldehyde (Glu) and silica ($SiO_2$). Performance of different coatings was tested using electrochemical impedance spectroscopy and immersion test. The best anticorrosion performance was observed in case of 10 % Ch_$SiO_2$_PVB coatings, which withstand immersion test over 25 days in 0.5 M salt solution without visible corrosion. 10 % Ch_$SiO_2$ coatings without the PVB top layer didn't last more than 3days. Application of PVB top layer sealed the defects in the chitosan pre-layer and improved its hydrophobic nature as well. Raman spectra and SEM of steel surfaces after corrosion study and removal of PVB_Ch/Glu_PVB coatings showed a passive layer of iron oxide, attributing to the self-healing nature of these coatings. Conducting particle like graphene reinforcement of chitosan in the lbl coatings enhanced corrosion resistance of chitosan coatings.

• Journal of the Semiconductor & Display Technology
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• v.5 no.3 s.16
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• pp.23-27
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• 2006

Recently, Top emission organic light-emitting diode (TEOLED) has been attracted by their potential application for the development of flat panel display (FPD). We have fabricated the high luminance top emission organic-emitting diode (TEOLED) using dual cathode layer and three top emitting structure. These devices were characterized by electroluminescence (EL) and current density-voltage (J-V) measurements. After compared it with Au anode structure, luminance of the device using dual anode was better than using without Al device. Consequently, Al layers are very good candidates for a promising electron-injecting buffer layer for top emission light-emitting diode (TEOLED).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.101-102
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• 2009

SGOI MOSFETs with various Ge mole fractions were fabricated and compared to the SOI MOSFET. SGOI MOSFETs have a lager drain current and higher effective mobility than the SOI MOSFET as increased Ge mole fractions. The lattice constant difference causes lattice mismatch between the SiGe layer and the top-Si layer during the top-Si layer growth. However, SGOI MOSFETs have a lager leakage current at subthreshold region. Also, leakage current at subthreshold region increased with Ge mole fractions. This is attributable to the crystalline defects due to the lattice mismatch between the SiGe layer and the top-Si layer.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.499-502
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• 2008

Effects of a dielectric capping layer on the luminous characteristics of top emitting organic light emitting diodes (TOLEDs) have been analyzed using a classical electromagnetic theory. Special attention was given to the influence of the cavity length on the effectiveness of the capping layer. The luminance characteristics of the TOLEDs influenced by the combined effects of the cavity length and the capping layer thickness. Furthermore, these combined effects also modify the emission spectrum and pattern of the TOLEDs, which result in the improvement of total luminance of the device, but no significant change in the device out-coupling efficiency.

• Korean Journal of Veterinary Research
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• v.29 no.1
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• pp.57-60
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• 1989

This study was carried out to evaluate the possibility of sex preselection by gradients methods using bovine serum albumin in rabbits. Artificial insemination was performed with sperm from the top and bottom layer of rabbit semen separated by bovine serum albumin gradients. Various characteristics of separated sperm, and the conception rate and secondary sex ratio at artificial insemination with separated sperm were compared. The results obtained were as follows. 1. The sperm from the bottom layer showed significanty high value in motility, percent of normal sperm and progressive motility as compared with control sperm and the sperm and the sperm from the top layer. 2. The conception rate of sperm from the bottom layer was higher than that of the top layer. But secondary sex ratio was not altered by this methods.

• Journal of the Korean Society of Visualization
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• v.15 no.3
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• pp.27-33
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• 2017

Direct numerical simulations of turbulent channel flows with moving wall conditions on the top wall are performed to examine the effects of the moving wall on the turbulent characteristics. The moving wall velocity only applied to the top wall with the opposite direction to the main flow is systematically varied to reveal the sustained-mechanism for turbulence. The turbulence statistics for the Couette-Poiseuille flow, such as mean velocity, root mean square of the velocity fluctuations, Reynolds shear stress and pre-multiplied energy spectra of the velocity fluctuations, are compared with those of canonical turbulent channel flows. The comparison suggests that although the turbulent activity on the top wall increases with increasing the Reynolds number, that on the bottom wall decreases, contrary to the previous finding for the canonical turbulent channel flows. The increase of the turbulent energy on the top wall is attributed to not only the increase of the Reynolds number but also elongation of the logarithmic layer due to increase of the wall layer on the top wall. However, because the logarithmic layer is shortened on the bottom wall due to the decrease of the wall layer, the turbulence energy on the bottom wall decreases despite of the increase of the Reynolds number.