• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.31A no.10
• /
• pp.173-184
• /
• 1994

BiCMOS circuits mixed with CMOS and bipolar technologies show peculiar fault characteristics that are different from those of other technoloties. It has been reported that because most of short faults in BiCMOS circuits cause logically intermediate level at outputs, current monitoring method is required to detect these faluts. However current monitoring requires additional hardware capabilities in the testing equipment and evaluation of test responses can be more difficult. In this paper, we analyze the characteristics of faults in BiCMOS circuit together with their test methods and propose a new design technique for testability to detect the faults by logic monitoring. An effective method to detect the transition delay faults induced by performance degradation by the open or short fault of bipolar transistors in BiCMOS circuits is presented. The proposed design-for-testability methods for BiCMOS circuits are confirmed by the SPICE simulation.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2003.11a
• /
• pp.133-137
• /
• 2003

The effect of Bi additions to the eutectic Sn-3.5Ag solder alloy on the growth kinetics of the intermetallic compound (IMC) layers during solid-state aging of Sn-Ag-Bi/Cu solder joints has been Investigated. The Bi additions enhanced the growth rate of the total IMC layer comprising of $Cu_6Sn_5$ and $Cu_3Sn$ sublayers. This enhanced IMC growth rate was primarily due to the rapid increase In the growth rate of $Cu_6Sn_5$ sublayer. The growth rate of $Cu_3Sn$ sublayers was little influenced and appeared to be retarded by the Bi additions. The observed growth behavior of $Cu_6Sn_5$ and $Cu_3Sn$ sublayers could be understood if the interfacial reaction barrier at the $Cu_6Sn_5/solder$ interface were reduced by the segregation of Bi at the interface.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.32A no.12
• /
• pp.198-208
• /
• 1995

BiCMOS circuit consist of CMOS part which constructs logic function, and bipolar part which drives output load. Test to detect stuck-open faults in BiCMOS circuit is important, since these faults do sequential behavior and are represented as transition faults. In this paper, proposes a method for efficiently detecting transistor stuck-open faults in BiCMOS circuit by transforming them into slow-to=rise transition and slow-to-fall transition. In proposed method, BiCMOS circuit is transformed into equivalent gate-level circuit by dividing it into pull-up part which make output 1, and pull-down part which make output 0. Stuck-open faults in transistor are modelled as transition fault in input line of gate level circuit which is transformed from given circuit. Faults are detceted by using pull-up part gate level circuit when expected value is '01', or using pull-down part gate level circuit when expected value is '10'. By this method, transistor stuck-open faults in BiCMOS circuit are easily detected using conventional gate level test generation algorithm for transition fault.

• Journal of Korea Foundry Society
• /
• v.10 no.5
• /
• pp.392-398
• /
• 1990

To improve free-cutting property, fine Pb, Bi particles is necessary to be distributed evenly in Al-Cu alloy. The control of added element size and distribution are very difficult because of the physical properties of Pb, Bi. The effect of master alloy compositions on microstructure and particle distribution was investigated. The ribbon shape of Pb-50wt% Bi master alloy showed the best results. And Ti addition improved even distribution of Pb, Bi particles. Particles grown from $L_2$ phase were considered to be the Pb, Bi compound.

• Bulletin of the Korean Chemical Society
• /
• v.19 no.12
• /
• pp.1283-1293
• /
• 1998

A solid state chemical approach to discover new mateials with enhanced thermoelectric properties is described. The aim is to construct three-dimensional bismuth chalcogenide framework structures which contain tonically interacting alkali or alkaline earth atoms. The alkali atoms tend to have soft "rattling" type phonon modes which result in very low thermal conductivity in these materials. Another desirable feature in this class of compounds is the low crystal symmetry and narrow band-gaps. Several promising materials such as BaBiTe3, KBi6.33S10, K2Bi8S13, β-K2Bi8Se13, K2.5Bi8.5Se14, Ba4Bi6Se13, Eu2Pb2Bi6Se13, Al1+xPb4-2xSb7+xSe15 (A=K, Rb), and CsBi4Te6 are described.

• Korean Journal of Crystallography
• /
• v.9 no.1
• /
• pp.30-38
• /
• 1998

A new frequency weighing sensor was applied to grow Bi12GeO20 crystals in the auto-di-ameter control system of Czochralski method. The rotation rate was varied in the range of 23 to 21 rpm to preserve flat interface in a given heat configuration. To prevent the constitutional super-cooling from the evaporation loss, 105% stoichiometric amount of Bi2O3 was employed, equivalent to 6.18 molar ratio of Bi2O3 to GeO2. Transparent and light brown Bi12GeO20 single crystal in uniform diameter was grown. The dislocation density was determined to be 103/cm2 corresponding to the optical quality in commercial applications. The grown crystal measured diameter 25 mm and length 70 mm and the preferred growth direction was confirmed to be <110>.

• Resources Recycling
• /
• v.26 no.5
• /
• pp.22-28
• /
• 2017

In-Bi-Sn alloy sheet has been used as a thermal fusible parts of secondary battery safety system. This study offers a simple process to make In-Bi-Sn alloy fusible parts. The process consists of two procedures, melting and sheeting by tape casting. 62.5 wt%-In 20.0 wt%-Bi 17.5 wt%-Sn (M.P. $92.4^{\circ}C$) alloy sheet obtained by tape casting was used as the thermal fusible sheet of thermal fuse system for mobile telephone. The performance test of the system was carried out in oil bath, and the fusible alloy sheet was melted and cut off at $95^{\circ}C$. This results confirmed the possibility that the alloy sheet obtained by tape casting can be usable as a thermal fusible parts of battery safety system. And this process can be applied as a simple process to recycle the In-Bi-Sn alloy scrap separated from the used thermal fuse system.

• The Pure and Applied Mathematics
• /
• v.14 no.3
• /
• pp.153-159
• /
• 2007

The notion of bi-ideals in near-rings was effectively used to characterize the near-fields. Using this notion, various generalizations of regularity conditions have been studied. In this paper, we generalize further the notion of bi-ideals and introduce the notion of weak bi-ideals in near-rings and obtain various characterizations using the same in left self distributive near-rings.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.04a
• /
• pp.64-67
• /
• 2002

The Physical and magnetic properties such as microstructure, permeability and power loss of Ni-Zn ferrite with composition of $Ni_{0.8}Zn_{0.2}Fe_2O_4$, were investigated as the function of $Bi_2O_3$ and CaO contents. The power loss increased in proportion to the amount of $Bi_2O_3$ up to 0.3 wt% but it decreased over than 0.3 wt% addition. The highest permeability of 134 was obtained to the specimen added 1.0 wt% $Bi_2O_3$ since $Bi_2O_3$ contents were strongly dominant to grain growth and size than that of CaO. $Bi_2O_3$ liquid phase created during sintering process promoted sintering and grain growth so that grain size and permeability increased compared to that of the specimens which were sintered with free-additive and CaO. Also, lots of pores existed in the specimen which was added $Bi_2O_3$ wt% with the biggest grain size.

• Journal of the Korean Ceramic Society
• /
• v.34 no.8
• /
• pp.897-907
• /
• 1997

Thin films of Bi4-xSmxTi3O12(0$\leq$x$\leq$2) were prepared on Pt/Ti/SiO2/Si(100) at $700^{\circ}C$ using spin-coating with sols derived from Bi-Sm-Ti complex alkoxides. From X-ray diffraction analysis, it was observed that Sm-substituted phases resembled ferroelectric Bi4Ti3O12 in structure. Variations of their lattice parameters depending on the amount of Sm-substitution showed that an anomalous structural distortion might exist at x=1. The grain sizes of the thin films decreased from 0.115 ${\mu}{\textrm}{m}$ to 0.078${\mu}{\textrm}{m}$ with increasing the amount of Sm-substitution. The dielectric constants and the remanent polarizations of the thin films decreased with increasing the amount of the Sm-substitution, which were related to decrease of the stereo-active Bi3+ ion contributing to polarization. However, these values were exceptionally high at x=1, compared to those of the other substituted phases. Such an anomaly suggests that the phase of x=1 has 1:1 chemical ordering between Sm and Bi in structure. The thin films of all compositions except x=2 showed ferroelectricity. The thin film of x=2 was paraelectric, whose grains were too fine to exhibit ferroelectricity.