• Applied Chemistry for Engineering
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• v.4 no.2
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• pp.273-283
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• 1993

Addition of various acids or organic compounds to the electrolyte solution during the electrodeposition of $PbO_2$ on titanium madras substrate strongly affected performance of the deposited $PbO_2$ layer. Results of X-ray diffractometry ascertained that ${\beta}-PbO_2$ was deposited in acidic electrolyte. Among additives used in this experiment, $PbO_2$ with a high oxygen overvoltage was electrodeposited when sodium lauryl sulfate was added, and $PbO_2$ with a lower chlorine overvoltage was electrodeposited when polyethylene glycol was added to the electrolyte solution. The oxygen and chlorine overvoltage of $PbO_2$ was strongly dependent on the stirring provided during the electrodeposition experiment. It was observed by the SEM results that the $PbO_2$ grains deposited when stirring was not provided during the electrodeposition have larger than $PbO_2$ grains deposited by stirring. In the $PbO_2$ deposition under acidic electrolyte, the oxygen overvoltage increased with larger $PbO_2$ grains and the chlorine overvoltage decreased with smaller $PbO_2$ grains. The optimal current efficiency of $PbO_2$ in the presence of perchloric acid was observed at $Pb(NO_3)_2$ 560g/l, $65{\sim}70^{\circ}C$, and pH>1.

• Korean Journal of Materials Research
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• v.9 no.11
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• pp.1129-1136
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• 1999

TIN films were prepared on Si(100) substrate by ICP-CVD(inductive1y coupled plasma enhanced chemical vapor deposition) using TEMAT(tetrakis ethylmethamido titanium : Ti$[\textrm{N}\textrm{(CH)}_{3}\textrm{C}_{2}\textrm{H}_{5}]_{4}$) precursor at various deposition conditions. Phase, microstructure, and the electrical properties of TIN films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), high resolution transmission electron microscopy (HRTEM) and electrical measurements. Polycrystalline TiN films with B1 structure were grown at temperatures over $200^{\circ}C$. Preferentially oriented along TiN(111) films were obtained at temperatures over $300^{\circ}C$ with the flow rates of 10, 5, and 5 sccm for TEMAT, $\textrm{N}_{2}$ and Ar gas. The TiN/Si(100) interface was flat and no chemical reaction between TIN and $\textrm{SiO}_2$ was found. The resistivity, carrier concentration and the carrier mobility for the TiN sample prepared at $500^{\circ}C$ are 21 $\mu\Omega$cm, 9.5$\times\textrm{10}^{18}\textrm{cm}^{-3}$ and $462.6\textrm{cm}^{2}$/Vs, respectively.

• Korean Journal of Materials Research
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• v.8 no.5
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• pp.377-382
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• 1998

Atomic layer deposition(ALD) of amorphous TiN films on $SiO_2$ between 17$0^{\circ}C$ and 21O$^{\circ}C$ has been investigated by alternate supply of reactant sources, Ti[N($C_2,H_5,CH_3)_2]_4$ [tetrakis(ethylmethylamminoltitanium: TEMAT] and $NH_3$. Reactant sources were injected into the reactor in the order of TEMAT vapor pulse, Ar gas pulse, $NH_3$. gas pulse and Ar gas pulse. Film thickness per cycle was saturated at around 1.6 monolayer(MU per cycle with sufficient pulse times of reactant sources at 20$0^{\circ}C$. The results suggest that film thickness per cycle could be beyond 1 MLicycie in ALD, which were explained by rechemisorption mechanisms of reactant sources. The ideal linear relationship be¬tween number of cycles and film thickness is confirmed. As a results of surface limited reactions of ALD, step cover¬age was excellent. Particles caused by the gas phase reactions between TEMAT and NH3 were almost free because TEMAT was seperated from $NH_3$ by the Ar pulse. In spite of relatively low substrate temperature, carbon impurity was incorporated below 4 at%.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.215-220
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• 2001

Amorphous Ti-Si-N films of approximately 200 and 650 thickness were reactively sputtered on Si wafers using a dc magnetron sputtering system at various $N_2$/Ar flow ratios. Their barrier properties between Cu (750 ) and Si were investigated by using sheet resistance measurements, XRD, SEM, RBS, and AES depth profiling focused on the effect of the nitrogen content in Ti-Si-N thin film on the Ti-Si-N barrier properties. As the nitrogen content increases, first the failure temperature tends to increase up to 46 % and then decrease. Barrier failure seems to occur by the diffusion of Cu into the Si substrate to form Cu$_3$Si, since no other X- ray diffraction intensity peak (for example, that for titanium silicide) than Cu and Cu$_3$Si Peaks appears up to 80$0^{\circ}C$. The optimal composition of Ti-Si-N in this study is $Ti_{29}$Si$_{25}$N$_{46}$. The failure temperatures of the $Ti_{29}$Si$_{25}$N$_{465}$ barrier layers 200 and 650 thick are 650 and $700^{\circ}C$, respectively.ely.

• The Journal of Engineering Research
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• v.6 no.2
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• pp.23-32
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• 2004

Metals, ceramics and polymers are widely used as bioimplant materials. However, Ti and Ti alloys are widely used because of its high strength to weight ratio and good biocompatibility when implanted in the body. In this experiment, Ti alloys of Grade-4 (gr4), 0.2 wt % Fe, 0.5 wt % Fe and 2 wt % Fe were studied for their surface morphology and HAp forming ability on the metal substrate for different treatments. Intially, the samples were mechanically polished on silicone carbide paper (No.-2000). The polished samples were treated with 5M NaOH solution at $60^{\circ}C$ for 24 hours. The NaOH treated samples were washed gently with distill water and dried at $40^{\circ}C$ for 1 day. The dried samples were heated in air at $600^{\circ}C$ for 1 hour. The surface morphology of these samples were studied using SEM. The SEM studies showed network of pores in all samples. These samples were immersed in stimulated body fluids (SBF) kept at $36.5^{\circ}C$ for different periods over the length of 1 to 14 days. The apatite formation was confirmed on all Ti-alloys using EDAX.

• Journal of the Korea Organic Resources Recycling Association
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• v.32 no.1
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• pp.39-47
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• 2024

In this study, LiDAR-detective black material is synthesized by recycling silicon sludge (SS) that is generated from semiconductor manufacturing process, and its recognition is confirmed using two types of LiDAR sensors (MEMS and Rotating LiDAR). In detail, metal impurities on the surface of SS is removed, followed by coating of titanium dioxide (TiO₂) and subsequent chemical reduction to obtain SS-derived black TiO₂ (SS/bTiO₂) material. As-prepared SS/bTiO₂ is mixed with transparent paint to prepare hydrophilic black paints and applied to a glass substrate using a spray gun. SS/bTiO₂-based paint shows similar blackness (L^*=15.7) compared to commercial carbon black-based paint, and remarkable NIR reflectance (26.5R%, 905nm). Furthermore, MEMS and Rotating LiDAR have successfully detected the SS/bTiO₂-based paint. This is attributed to the occurrence of high reflection of light at the interface between the black TiO₂ and the silicon sludge according to the Fresnel's reflection principle. Hence, the new application field to effectively recycle silicon sludge generated in the semiconductor manufacturing process has been presented.