• 제목/요약/키워드: Titanium film

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Pitting Behavior of Ti/TiN Film Coated onto AISI 304 Stainless Steel (AISI 304 스테인리스강에 코팅된 Ti/TiN film의 공식거동)

  • 박지윤;최한철;김관휴
    • Journal of the Korean institute of surface engineering
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    • v.33 no.2
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    • pp.93-100
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    • 2000
  • Effects of Ti content and Ti underlayer on the pitting behavior of TiN coated AISI 304 stainless steel have been studied. The stainless steel containing 0.1~1.0wt% Ti were melted with a vacuum melting furnace and heat treated at $1050^{\circ}C$ for 1hr for solutionization. The specimen were coated with l$\mu\textrm{m}$ and 2$\mu\textrm{m}$ thickness of Ti and TiN by E-beam PVD method. The microstructure and phase analysis were conducted by using XRD, XPS and SEM with these specimen. XRD patterns shows that in TiN single-layer only the TiN (111) Peak is major and the other peaks are very weak, but in Ti/TiN double-layer TiN (220) and TiN (200) peaks are developed. It is observed that the surface of coating is covered with titanium oxide (TiO$_2$) and titanium oxynitride ($TiO_2$N) as well as TiN. Corrosion potential on the anodic polarization curve measured in HCl solution increase in proportion to the Ti content of substrate and by a presence of the Ti underlayer, whereas corrosion and passivation current densities are not affected by either of them. The number and size of pits decrease with increasing Ti content and a presence of the coated Ti film as underlayer in the TiN coated stainless steel.

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Band Gap Tuning in Nanoporous TiO2-ZrO2 Hybrid Thin Films

  • Kim, Chang-Sik;Jeong, Hyun-Dam
    • Bulletin of the Korean Chemical Society
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    • v.28 no.12
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    • pp.2333-2337
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    • 2007
  • Nanoporous TiO2 and ZrO2 thin films were spin-coated using a surfactant-templated approach from Pluronic P123 (EO20PO70EO20) as the templating agent, titanium alkoxide (Ti(OC4H9)4) as the inorganic precursor, and butanol as a the solvent. The control of the electronic structure of TiO2 is crucial for its various applications. We found that the band gap of the hybrid nanoporous thin films can be easily tuned by adding an acetylacetonestabilized Zr(OC4H9)4 precursor to the precursor solution of Ti(OC4H9)4. Pores with a diameter of 5 nm-10 nm were randomly dispersed and partially connected to each other inside the films. TiO2 and ZrO2 thin films have an anatase structure and tetragonal structure, respectively, while the TiO2-ZrO2 hybrid film exhibited no crystallinity. The refractive index was significantly changed by varying the atomic ratio of titanium to zirconium. The band gap for the nanoporous TiO2 was estimated to 3.43 eV and that for the TiO2-ZrO2 hybrid film was 3.61 eV.

Fabrication of Organic-Inorganic Nano Hybrid Superlattice Thin Films by Molecular Layer Deposition

  • Cho, Bo-Ram;Yang, Da-Som;Sung, Myung-M.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.115-115
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    • 2011
  • Nano hybrid superlattices consisting of organic and inorganic components have great potential for creation of new types of functional material by utilizing the wide variety of properties which differ from their constituents. They provide the opportunity for developing new materials with new useful properties. Herein, we fabricated new type of organic-inorganic nano hybrid superlattice thin films by a sequential, self-limiting surface chemistry process known as molecular layer depostion (MLD) combined with atomic layer deposition (ALD). An organic layer was formed at $150^{\circ}C$ using MLD with repeated sequintial adsorption of Hydroquinone and Titanium tetrachloride. A $TiO_2$ inorganic nanolayer was deposited at the same temperature using ALD with alternating surface-saturating reactions of Titanium tetrachloride and water. Using UV-Vis spectroscopy, we confirmed visible light absorption by LMCT. And FTIR spectroscopy and XPS were employed to determine the chemical composition. Ellipsometry and TEM analysis were also used to confirm linear growth of the film versus number of MLD cycles at all same temperature. In addition, p-n junction diodes domonstrated in this study suggest that the film can be suitable for n-type semiconductors.

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Evaluation of Corrosion Resistance Properties by Applying Galvanostatic Nanoscale Current Density on Passive Metals

  • Na, Seung-Chan;Lee, Jeong-Ja;Yang, Won-Seog;Hwang, Woon-Suk
    • Corrosion Science and Technology
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    • v.6 no.1
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    • pp.7-11
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    • 2007
  • In this study, new evaluation method for the stability and corrosion resistance properties of passive films has been suggested by means of observation of self-activation process in open-circuit state and galvanostatic nanoscale reduction test. The experiments were performed for air-formed oxide film in case of plain carbon steel, and for anodically passivated films formed in aqueous sulfuric acid solutions in case of titanium and 304 stainless steel. From these experimental results, we derived two parameters, $i_{0}$ and $q_{0}$, which characterize the self-activation process and the properties of passive film on a stainless steel surface. The parameter $i_{0}$ was defined as the rate of self-activation, and $q_{0}$, the reduced amount of charge during the self-activation process. In conclusion, it is considered that the stability and corrosion resistance of passive metals and alloys can be evaluated quantitatively by three parameters of $\tau_{0}$, $q_{0}$, and $i_{0}$, which easily obtain by means of observing the self-activation process and galvanostatic nanoscale reduction test.

TiO2 Thin Film Growth Research to Improve Photoelectrochemical Water Splitting Efficiency (TiO2 박막 성장에 의한 광전기화학 물분해 효율 변화)

  • Seong Gyu Kim;Yu Jin Jo;Sunhwa Jin;Dong Hyeok Seo;Woo-Byoung Kim
    • Korean Journal of Materials Research
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    • v.34 no.4
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    • pp.202-207
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    • 2024
  • In this study, we undertook detailed experiments to increase hydrogen production efficiency by optimizing the thickness of titanium dioxide (TiO2) thin films. TiO2 films were deposited on p-type silicon (Si) wafers using atomic layer deposition (ALD) technology. The main goal was to identify the optimal thickness of TiO2 film that would maximize hydrogen production efficiency while maintaining stable operating conditions. The photoelectrochemical (PEC) properties of the TiO2 films of different thicknesses were evaluated using open circuit potential (OCP) and linear sweep voltammetry (LSV) analysis. These techniques play a pivotal role in evaluating the electrochemical behavior and photoactivity of semiconductor materials in PEC systems. Our results showed photovoltage tended to improve with increasing thickness of TiO2 deposition. However, this improvement was observed to plateau and eventually decline when the thickness exceeded 1.5 nm, showing a correlation between charge transfer efficiency and tunneling. On the other hand, LSV analysis showed bare Si had the greatest efficiency, and that the deposition of TiO2 caused a positive change in the formation of photovoltage, but was not optimal. We show that oxide tunneling-capable TiO2 film thicknesses of 1~2 nm have the potential to improve the efficiency of PEC hydrogen production systems. This study not only reveals the complex relationship between film thickness and PEC performance, but also enabled greater efficiency and set a benchmark for future research aimed at developing sustainable hydrogen production technologies.

The Study of Formation of Ti-silicide deposited with Composite Target [II] (Composite Target으로 증착된 Ti-silicide의 현성에 관한 연구[II])

  • Choi, Jin-Seog;Paek, Su-Hyon;Song, Young-Sik;Sim, Tae-Un;Lee, Jong-Gil
    • Korean Journal of Materials Research
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    • v.1 no.4
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    • pp.191-197
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    • 1991
  • The surface roughnesses of titanium silicide films and the diffusion behaviours of dopants in single crystal and polycrystalline silicon substrates durng titanium silicide formation by rapid thermal annealing(RTA) of sputter deposited Ti-filicide film from the composite $TiSi_{2.6}$ target were investigated by the secondary ion mass spectrometry(SIMS), a four-point probe, X-ray diffraction, and surface roughness measurements. The as-deposited films were amorphous but film prepared on single silicon substrate crystallized to the orthorhombic $TiSi_2$(C54 structure) upon rapid thermal annealing(RTA) at $800^{\circ}C$ for 20sec. There was no significant out-diffusion of dopants from both single crystal and polycrystalline silicon substrate into titanum silicide layers during annealing. Most of the implanted dopants piled up near the titanium silicide/silicon interface. The surface roughnesses of titanium silicide films were in the range between 16 and 22nm.

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Manufacture of Inorganic Materials Thin Film Solar Cell using Titanium Dioxide (이산화티타니움을 사용한 무기질 박막형 태앙전지의 제작)

  • Lee, Kyung-Ho
    • The Journal of the Korea Contents Association
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    • v.9 no.10
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    • pp.451-463
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    • 2009
  • The purpose of this research is to develop thin film materials and fabrication process for efficient $TiO_2$/CdTe solar cells. In this work photocatalyst titanium dioxide was prepared by sol-gel procedure according to reaction condition, the mole ratio of $H_2O$/TTIP, pH of solution and aging condition of powder. The prepared titanium dioxide was thermally treated from 300 to $750^{\circ}C$. Maximum intensity of anatase phase of titanium dioxide was achieved by calcination at $600^{\circ}C$ for 2 hr. And it was mixture of anatase and rutile phase when temperature of calcination was $750^{\circ}C$. It has been known that the properties of synthesized titanium dioxide according to aging time and calcination temperature was converted to anatase phase crystal on increasing of aging time. Also the current density has been increased with aging time and temperature, the efficiency has been increased with because of reason on above results. The formation of chemical bonding on oxygen and cadmium telluride under oxygen circumstances had been observed, and oxygen of thin film surface on cadmium telluride had been decreased with the treatment of chromate and hydrazine. As results had been shown that the energy conversion efficiency of cadmium telluride use by rapidly treatmented heat at the condition of $550^{\circ}C$ under air circumstance got 12.0%, 6.0% values according to $0.07cm^2$, $1.0cm^2$ surface area, respectively.

MECHANICAL PROPERTIES OF TIN COATED FILM WITH VARIOUS COATING THICKNESS ON TITANIUM ALLOY (타이타늄 합금에 다양한 두께로 코팅된 TiN 피막의 기계적 성질)

  • Lee, Jae-Yun;Oh, Dong-Joon;Kim, Hee-Jung;Chung, Chae-Heon
    • The Journal of Korean Academy of Prosthodontics
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    • v.45 no.5
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    • pp.675-686
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    • 2007
  • Statement of problem: Titanium nitride(TiN) coatings are the most general and popular coating method and used to improve the properties of metallic surface for industrial purposes. When TiN coating applied to the abutment screw, frictional resistance would be reduced, as a results, the greater preload and prevention of the screw loosening could be expected. Purpose: The purpose of this study was to investigate mechanical properties of TiN coated film of various coating thickness on the titanium alloy surface and to evaluate proper coating thickness. Material and method: 95 Titanium alloy (Ti-6Al-4V) discs of 15 mm in diameter and 3 mm in thickness were prepared for TiN coating and divided into 7 groups in this study. Acceding to coating deposition time (CDT) with TiN by using Arc ion plating, were divided into 7 groups : Group A (CDT 30min), Group B (CDT 60min), Group C (CDT 90min), Group D (CDT 120min), Group E (CDT 150min), Group F(CDT 180min) and Group G (no CDT) as a control group. TiN coating surface was observed with Atomic Force Microscope(AFM), field emission scanning electron microscopy(FE-SEM) and examined with scratch tester, wear tester. Result: 1. Coating thickness fir each coated group was increased in proportion to coating deposition time. 2. Surface of all coated groups except Group A was homogeneous and smooth. However, surface of none coated Group G had scratch. 3. Adhesion strength for each coated group was increased in proportion to coating deposition time. 4. Wear resistance for each coated group was increased in proportion to coating deposition time. 5. Surface roughness in Group A, B, C was increased in proportion to coating deposition time. But, surface roughness in Group D, E, F was showed decreased tendency in proportion to coating deposition time. Conclusion: According to coating deposition time, mechanical properties of TiN coated film were changed. It was considered that 120 minutes coating deposition time ($1.32{\mu}m$ in coating thickness) is necessary.

The Effect of Sputtering Conditions on the Electrochromic Properties of Titanium Oxide Thin Films (스퍼터링 조건이 티탄산화물박막의 전기적 착색 특성에 미치는 영향)

  • Lee, Kil-Dong
    • Journal of the Korean Solar Energy Society
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    • v.26 no.4
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    • pp.55-61
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    • 2006
  • Titanium oxide ($TiO_2$) films are deposited on the indium tin oxide (ITO) substrate in an $Ar/O_2$ atmosphere by using reactive RF (Radio Frequency) magnetron sputtering technique, and Electrochromic properties and durability of $TiO_2$ films deposited at different preparation conditions are investigated by using UV-VIS spectrophotometer and cyclic voltammetry Li+ interalation/deintercalation in $TiO_2$ films shows that the electrochromic properties and durability of as-deposited films strongly depend on gas pressure $TiO_2$ films formed in our sputtering conditions are found to remain transparent, irrespective of their Li+ ion contents. The optimum sputtering conditions for film as passive counter electrode in electrochromic devices are working pressure of $1.0\;{\times}\;10^{-2}\;torr$ and oxygen flow raes of $10{\sim}15\;sccm$, respectively.

A Study on the BaTiO3 Thin Film by MOD Process (MOD법에 의한 BaTiO3 박막 제조 및 특성에 대한 연구)

  • 정영길
    • Journal of the Microelectronics and Packaging Society
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    • v.1 no.2
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    • pp.113-124
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    • 1994
  • MOD법을 마이크로회로용 티탄산 바륨 콘덴서 박막형성에 적용하였다. Barium decanoate barium 2-ethylhexanoate titanium dimethoxy didecanoate 및 titanium dimethoxy di-2-ethylhexanoate와 같은 여러 가지 금속유기화합물들을 합성하고 동정한 다 음 공통용매에 대한 용해도를 시험하였다. 이금속유기화학물들 가운데 barium 2-ethylhexanoate와 titanium dimethoxy di-2-ethylhexanoate가 xylene-pyridine 혼합용매에 잘녹고 MOD법에 의한 BaTiO3 박막형성에 매우 안정한 조성을 이룸을 확인하였다. 이 조 성을 스핀코팅에 의하여 백금박과 실리콘 웨이퍼상에 금속유기화학물 막을 형성하고 최고 온도와 유지시간에 따라 소성하여 형성된 유전체 박막들의 전기전 특성을 측정하고 고찰하 였다.