• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.334-334
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• 2012

Transparent oxide semiconductors have recently attracted much attention as channel layer materials due to advantageous electrical and optical characteristics such as high mobility, high stability, and good transparency. In addition, transparent oxide semiconductor can be fabricated at low temperature with a low production cost and it permits highly uniform devices such as large area displays. A variety of thin film transistors (TFTs) have been studied including ZnO, InZnO, and InGaZnO as the channel layer. Recently, there are many studies for substitution of Ga in InGaZnO TFTs due to their problem, such as stability of devices. In this work, new quaternary compound materials, tantalum-indium-tin oxide (TaInSnO) thin films were fabricated by using co-sputtering and used for the active channel layer in thin film transistors (TFTs). We deposited TaInSnO films in a mixed gas (O2+Ar) atmosphere by co-sputtering from Ta and ITO targets, respectively. The electric characteristics of TaInSnO TFTs and thin films were investigated according to the RF power applied to the $Ta_2O_5$ target. The addition of Ta elements could suppress the formation of oxygen vacancies because of the stronger oxidation tendency of Ta relative to that of In or Sn. Therefore the free carrier density decreased with increasing RF power of $Ta_2O_5$ in TaInSnO thin film. The optimized characteristics of TaInSnO TFT showed an on/off current ratio of $1.4{\times}108$, a threshold voltage of 2.91 V, a field-effect mobility of 2.37 cm2/Vs, and a subthreshold swing of 0.48 V/dec.

• 한국재료학회지
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• 제32권4호
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• pp.210-215
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• 2022

Extensive research is being carried out on Ni-rich Li(Ni_xCo_yMn_1-x-y)O₂ (NCM) due to the growing demand for electric vehicles and reduced cost. In particular, Ni-rich Li(Ni_xCo_yMn_1-x-y-zAl_z)O₂ (NCMA) is attracting great attention as a promising candidate for the rapid development of Co-free but electrochemically more stable cathodes. Al, an inactive element in the structure, helps to improve structural stability and is also used as a doping element to improve cycle capability in Ni-rich NCM. In this study, NCMA was successfully synthesized with the desired composition by direct coprecipitation. Boron and tin were also used as dopants to improve the battery performance. Macro- and microstructures in the cathodes were examined by microscopy and X-ray diffraction. While Sn was not successfully doped into NCMA, boron could be doped into NCMA, leading to changes in its physicochemical properties. NCMA doped with boron revealed substantially improved electrochemical properties in terms of capacity retention and rate capability compared to the undoped NCMA.

• 전자통신동향분석
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• 제35권4호
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• pp.1-10
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• 2020

Since the 1960s, semiconductor packaging technology has developed into electrical joining techniques using lead frames or C4 bumps using tin-lead solder compositions based on traditional reflow processes. To meet the demands of a highly integrated semiconductor device, high reliability, high productivity, and an eco-friendly simplified process, packaging technology was required to use new materials and processes such as lead-free solder, epoxy-based non cleaning interconnection material, and laser based high-speed processes. For next generation semiconductor packaging, the study status of two epoxy-based interconnection materials such as fluxing and hybrid underfills along with a laser-assisted bonding process were introduced for fine pitch semiconductor applications. The fluxing underfill is a solvent-free and non-washing epoxy-based material, which combines the underfill role and fluxing function of the Surface Mounting Technology (SMT) process. The hybrid underfill is a mixture of the above fluxing underfill and lead-free solder powder. For low-heat-resistant substrate applications such as polyethylene terephthalate (PET) and high productivity, laser-assisted bonding technology is introduced with two epoxy-based underfill materials. Fluxing and hybrid underfills as next-generation semiconductor packaging materials along with laser-assisted bonding as a new process are expected to play an active role in next-generation large displays and Augmented Reality (AR) and Virtual Reality (VR) markets.

• 복식
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• 제30권
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• pp.201-210
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• 1996

The perpose of this study is to compare and to analyze the characters of the shape of up-per arm and armscye line between young and aged women. The subjects were measured with the Mar-tin's anthropometer and with free curve ruler. 10 items in the shape of upper arm were measured and 16 items in the shape of armscye line measured indirectly based on the measured shape taken from the subjects with free curve ruler and both date were analyzed. Mean standard deviation f-test factor analysis were performed for the statistical analysis of the date. The main results were as follows: 1) The shape of the upper arm is long and narrow in youg women compared with aged. 2) The length of the axilla of the aged women were longer than that of young women. 3) There are significant differences young and aged women on the shape of armscye line. THe length of from the front point of axilla to shoulder point width and depth of the shape of the armscye line length of axilla of aged women were longer than that of young. but the length of from the back point of axilla to shoulder point of yyoung women was longer than aged. 4.) The front point of axilla was existed lower than back point of axilla in aged women while front point of axilla was existed higher than the back point in young. 5) Through the factor analysis two factors were obtained from the shape of the upper arm and five factors from the shape on armmscye line in both groups. Factor compornents in the shape of the up per arm were length width and girth of that and in the shape of the armscye line were width and length of upper and lower back and front part of the shape of the armscye line depth of the axilla. he items in the same factor were resemble each other between two groups.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.69.1-69.1
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• 2010

We have fabricated organic photovoltaic cells (OPVs) with highly conductive poly 3,4-ethylenedioxythiophene : poly styrenesulfonate (PEDOT:PSS) layer as an anode without using transparent conducting oxide (TCO), which has been modified by adding some organic solvents like sorbitol (So), dimethyl sulfoxide (DMSO), N-methyl-pyrrolidone (NMP), dimethylformamide (DMF), and ethylene glycol (EG). The conductivity of PEDOT:PSS film modified with each additive was enhanced by three orders of magnitude. According to atomic force microscopy (AFM) study, conductivity enhancement might be related to better connections between the conducting PEDOT chains. TCO-free solar cells with modified PEDOT:PSS layer and the active layer composed of poly(3-hexylthiophene) (P3HT) and phenyl [6,6] C61 butyric acid methyl ester (PCBM) exhibited a comparable device performance to indium tin oxide (ITO) based organic solar cells. The power conversion efficiency (PCE) of the organic solar cells incorporating DMSO, So + DMSO and EG modified PEDOT:PSS layer reached 3.51, 3.64 and 3.77%, respectively, under illumination of AM 1.5 (100mW/$cm^2$).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.295-295
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• 2016

Recently, TCO films with low carrier concentration, high mobility and high work function are proposed beneficial as front electrode in HIT solar cell due to free-carrier absorption in NIR wavelength region and low Schottky barrier height in the front TCO/a-Si:H(p) interface. We report high transmittance and work function zirconium-doped indium tin oxide (ITO:Zr) films with various plasma (Ar/O2 and Ar) conditions. The role of (Ar/O2) plasma was to enhance the work function of the ITO:Zr films whereas the pure Ar plasma based ITO:Zr showed good electrical properties. The RF magnetron sputtered ITO:Zr films with low resistivity and high transmittance were employed as front electrode in HIT solar cells, yield the best performance of 18.15% with an open-circuit voltage of 710 eV and current density of 34.63 mA/cm2. The high work function ITO:Zr films can be used to modify the front barrier height of HIT solar cell.

• 한국분말재료학회지
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• 제16권4호
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• pp.268-274
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• 2009

For the purpose of obtaining basic information on the development of lead-free materials, a high density composites (a) W-Cu, (b) W-Sn (c)W-Cu-Sn and (d) W-Cu-Ni were fabricated by the P/M method. The particle size of used metal powders were under 325 mesh, inner size of compaction mould was $\phi8$ mm, and compaction pressure was 400 MPa. A High density composite samples were sintered at a temperature between $140^{\circ}C$ and $1050^{\circ}C$ for 1 hour under Ar atmosphere. The microstructure, phase transformation and physical properties of the sintered samples were investigated. As the results, the highest relative density of 95.86% (10.87 g/$cm^3$) was obtained particularly in the sintered W-Cu-Sn ternary system sample sintered at 450 for 1hr. And, Rockwell hardness (HRB) of 70.0 was obtained in this system.

• 한국분말재료학회지
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• 제18권4호
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• pp.347-358
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• 2011

Two different schemes were adopted to fabricate ordered macroporous structures with face centered cubic lattice of air spheres. Monodisperse polymeric latex suspension, which was synthesized by emulsifier-free emulsion polymerization, was mixed with metal oxide ceramic nanoparticles, followed by evaporation-induced self-assembly of the mixed hetero-colloidal particles. After calcination, inverse opal was generated during burning out the organic nanospheres. Inverse opals made of silica or iron oxide were fabricated according to this procedure. Other approach, which utilizes ceramic precursors instead of nanoparticles was adopted successfully to prepare ordered macroporous structure of titania with skeleton structures as well as lithium niobate inverted structures. Similarly, two different schemes were utilized to obtain disordered macroporous structures with random arrays of macropores. Disordered macroporous structure made of indium tin oxide (ITO) was obtained by fabricating colloidal glass of polystyrene microspheres with low monodispersity and subsequent infiltration of the ITO nanoparticles followed by heat treatment at high temperature for burning out the organic microspheres. Similar random structure of titania was also fabricated by mixing polystyrene building block particles with titania nanoparticles having large particle size followed by the calcinations of the samples.

• 마이크로전자및패키징학회지
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• 제21권1호
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• pp.13-17
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• 2014

The direct-patternable $SnO_2$ thin film was successfully fabricated by photochemical metal-organic deposition. The composition and chemical bonding state of $SnO_2$ thin film were analyzed by using X-ray photoelectron spectroscopy (XPS) from the surface to the interface with Si substrate. XPS depth profiling analysis allowed the determination of the atomic composition in $SnO_2$ film as a function of depth through the evolution of four elements of C 1s, Si 2p, Sn 3d, and O 1s core level peaks. At the top surface, nearly stoichiometric $SnO_2$ composition (O/Sn ratio is 1.92.) was observed due to surface oxidation but deficiency of oxygen was increased to the interface of patterned $SnO_2/Si$ substrate where the O/Sn ratio was about 1.73~1.75 at the films. This O deficient state of the film may act as an n-type semiconductor and allow $SnO_2$ to be applied as a transparent electrode in optoelectronic applications.

• 한국생산제조학회지
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• 제24권1호
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• pp.94-97
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• 2015

In this study, we introduce a yellowing phenomenon in silver nanowire laser patterning and attempt to understand the cause of this phenomenon. Silver nanowire is a promising alternative to indium tin oxide as a transparent electrode owing to its flexibility. Additionally, silver nanowire can be easily patterned by laser ablation, which is free of dangerous chemicals. However, a yellowish color change reducing visibility is observed on the patterned area of the silver nanowires, and this yellowing phenomenon prevents the use of silver nanowire as a transparent electrode material. We concluded that resolidified debris of melted and evaporated silver nanowires after laser ablation causes the color change of the electrode. Further research is needed to determine a means of mitigating this yellowing phenomenon.