• 한국주조공학회지
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• 제29권1호
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• pp.45-51
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• 2009

Conventionally, Al-Sn bearing manufacturing involves casting the Al-Sn alloy and roll-bonding to a steel backing strip. This article will describe the microstructural control of Al-Sn metal bearing alloy following heat treatment. When the pure aluminum rod dipped in the melt of tin maintained below the melting point of aluminum, the melting of aluminum was accelerated with penetration of tin along the grain boundary of aluminum. The length of plate-shaped eutectic tin was decreased with heat treatment time. With even longer heat treatment time over 1 hour the length of eutectic tin didn't decrease any more, while resulting in coarsening of aluminum matrix. Exuded liquid of eutectic tin was formed at the surface of Al-Sn alloy after heat treatment even at below eutectic temperature.

• Journal of Electrical Engineering and Technology
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• 제9권2호
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• pp.609-614
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• 2014

We fabricated amorphous zinc tin oxide (ZTO) transparent thin-film transistors (TTFTs). The effects of Al electrode on the mobility and threshold voltage of the ZTO TTFTs were investigated. It was found that the aluminum (Al)-ZTO contact decreased the mobility and increased the threshold voltage. Traps, originating from $AlO_x$, were assumed to be the cause of degradation. An indium tin oxide film was inserted between Al and ZTO as a buffer layer, forming an ohmic contact, which was revealed to improve the performance of ZTO TTFTs.

• 자원리싸이클링
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• 제30권5호
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• pp.3-9
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• 2021

우리나라에서 연, 아연, 동, 주석, 니켈, 알루미늄 등의 베이스메탈의 수급구조는 양극화된 특성을 지니고 있다. 연, 아연, 동 등은 국내에 세계적 규모의 생산기업이 있는 반면, 주석, 니켈, 알루미늄 등은 국내 생산기업이 전무하거나, 생산량이 미비하여 내수량의 대부분을 수입에 의존하고 있다. 따라서 베이스메탈의 수입중단 또는 국내생산기업의 생산 중단 등의 공급중단에 따른 리스크에 대한 대비가 필요하다. 본 연구에서는 베이스메탈 6종(구리, 연, 아연, 알루미늄, 니켈, 주석)을 대상으로 수입중단 리스크 발생 시 대응이 필요한 물량과 시장이 대응할 수 있는 물량, 정부가 대응해야 하는 물량(전략비축)을 정량화하였다.

• 한국전기전자재료학회논문지
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• 제28권7호
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• pp.433-438
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• 2015

Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated by using $n^+$ Si wafers as gate electrodes. Indium (In), aluminum (Al), indium tin oxide (ITO), silver (Ag), and gold (Au) were employed for source and drain electrodes, and the mobility and the threshold voltage of ZTO TTFTs were observed as a function of electrode. The ZTO TTFTs adopting In as electrodes showed the highest mobility and the lowest threshold voltage. It was shown that Ag and Au are not suitable for the electrodes of ZTO TTFTs. As the results of this study, it is considered that the interface properties of electrode/ZTO are more influential in the properties of ZTO TTFTs than the conductivity of electrode.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.714-716
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• 2002

Indium tin oxide (ITO) was used as the top anode of top emission inverted organic light emitting diodes (TEIOLEDs). TEIOLEDs were fabricated by deposition of an aluminum bottom cathode, an N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1, 1'-diphenyl-4, 4 1'-diamine (TPD) hole transport layer, a tris-8-hydroxyquinoline aluminum ($Alq_3$) emission layer, and an ITO top anode sequentially. ITO was deposited by r.f. magnetron sputtering without $O_2$ flow during the deposition. After the deposition, the deposited ITO layer was kept under oxygen atmosphere for the oxidation. The characteristics of the TEOILED were affected significantly by the post-deposition oxidation condition.

• Transactions on Electrical and Electronic Materials
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• 제12권6호
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• pp.267-270
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• 2011

In the process of inkjet-printed zinc tin oxide thin-film transistor, the effect of metallic interlayer underneath of source and drain electrode was investigated. The reason for the improved electrical properties with thin molybdenum oxide ($MoO_3$) layer was due to the chemically intermixed state of metallic interlayer, aluminum source and drain, and oxide semiconductor together. The atomic configuration of three Mo $3d_3$ and $3d_5$ doublets, three different Al 2p core levels, two Sn $3d_5$, and four different types of oxygen O 1s in the interfaces among those layers was confirmed by X-ray photospectroscopy.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 1996년도 제24회 춘계학술대회
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• pp.13-19
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• 1996

The tribological properties of the aluminum short fiber and glass fiber reinforced tin-bronze matrix composites manufactured by vacuum hot pressing was studied. The effect of the composition and the relative density on the wear properties was examined by a reciprocal type tribo-test machine. The results were discussed by the observation of the microstructure of sintered specimen and worn surface observation using SEM and EDS. Addition of the fibers led to the wear resistance since the metal matrix was reinforced by the fibers. The reinforcement of the fiber seemed to be stronger as the distribution of the fibers was more uniform. Graphite also reduce the wear loss. The pores in the sintered composites seemed to play an important role to improve the wear resistance since the pores provide the places where the solid lubricants locate.

• 한국응용과학기술학회지
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• 제16권4호
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• pp.307-311
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• 1999

Interfacial properties of electrode and organic thin layer is one of the most important factor in performing a Light Emitting Diodes(LED). Phthalocyanine copper was used as a buffer layer to improve interface characteristic, so that device efficiency was improved. In this study, LEDs were fabricated as like structures of Indium-Tin-Oxide (ITO) / N,N' -Diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) / 8-Hydroxyquinoline aluminum(Alq) / Aluminum(Al) and Indium-Tin-Oxide(ITO) / N,N'-Diphenyl-N,N' -di(m-tolyl)-benzidine(TPD) / 2-(4-Biphenylyl)-5(4-tert-butyl-phenyl)-1,3,4-oxadiazole(PBD) / Aluminum(Al). In these devices, CuPC was layered at electrode/organic layer interface. As position is changing and thickness is changing, devices showed characteristic luminescence efficiency and luminescence inensity respectively. We showed in this study that luminescence efficiency was improved with CuPC layer in LEDs. The efficiency of device with layer CuPC is higher than that of 2 layer CuPC. However, the luminescence of 2 layer CuPC device got higher value.

• 대한금속재료학회지
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• 제48권3호
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• pp.248-255
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• 2010

The effect of various alloying elements and melt treatment on the microstructural control of Al-Sn metallic bearing alloy was investigated. The thickness of tin film crystallized around primary aluminum decreased with the addition of 5% Cu in Al-Sn alloy, with tin particles being reduced in size by intervening the Ostwald ripening. With the addition of Si in Al-10%Sn alloy, the tin particles were crystallized with eutectic silicon, resulting in uniform distribution of tin particles. With the addition of Cu and Si in Al-Sn alloy, both the tensile strength and yield strength increased, with the increasing rate of yield strength being less than that of tensile strength. Although the Al-10%Sn-7%Si alloy has similar tensile strength compared with Al-10%Sn-5%Cu, the former showed superior abrasion resistance, resulting from preventing the tin particles from movement to the abrasion surface.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.464-465
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• 2009

A new level shifter using n-channel aluminum-doped zinc tin oxide (AZTO) thin film transistors (TFTs) was proposed to integrate driving circuits on qVGA panels for mobile display applications. The circuit used positive feedback loop to overcome limitations of circuits designed with oxide TFTs which is depletion mode n-channel TFTs. The measured results shows that the proposed circuit shifts 10 V input voltage to 20 V output voltage and its power consumption is 0.46 mW when the supply voltage is 20 V and the operating frequency is 10 kHz.