• Journal of Korea Foundry Society
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• v.29 no.1
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• pp.45-51
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• 2009

Conventionally, Al-Sn bearing manufacturing involves casting the Al-Sn alloy and roll-bonding to a steel backing strip. This article will describe the microstructural control of Al-Sn metal bearing alloy following heat treatment. When the pure aluminum rod dipped in the melt of tin maintained below the melting point of aluminum, the melting of aluminum was accelerated with penetration of tin along the grain boundary of aluminum. The length of plate-shaped eutectic tin was decreased with heat treatment time. With even longer heat treatment time over 1 hour the length of eutectic tin didn't decrease any more, while resulting in coarsening of aluminum matrix. Exuded liquid of eutectic tin was formed at the surface of Al-Sn alloy after heat treatment even at below eutectic temperature.

• Journal of Electrical Engineering and Technology
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• v.9 no.2
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• pp.609-614
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• 2014

We fabricated amorphous zinc tin oxide (ZTO) transparent thin-film transistors (TTFTs). The effects of Al electrode on the mobility and threshold voltage of the ZTO TTFTs were investigated. It was found that the aluminum (Al)-ZTO contact decreased the mobility and increased the threshold voltage. Traps, originating from $AlO_x$, were assumed to be the cause of degradation. An indium tin oxide film was inserted between Al and ZTO as a buffer layer, forming an ohmic contact, which was revealed to improve the performance of ZTO TTFTs.

• Resources Recycling
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• v.30 no.5
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• pp.3-9
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• 2021

In Korea, base metals such as lead, zinc, copper, tin, nickel, and aluminum have a polarized supply and demand structure. Despite the presence of world-class producers of lead, zinc, and copper, and their production is insufficient. And there are no domestic producers of tin, nickel, and aluminum, Thus, most of the domestic demand is dependent on imports. Therefore, it is necessary to prepare for the risk of supply interruption, such as the disruption of the import of base metals or interruption of domestic production. In this study, we estimated the quantity required to respond to the risk of import disruption, the quantity to which the market can respond, and the quantity to which the government needs to respond for six base metals (copper, lead, zinc, aluminum, nickel, and tin).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.7
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• pp.433-438
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• 2015

Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated by using $n^+$ Si wafers as gate electrodes. Indium (In), aluminum (Al), indium tin oxide (ITO), silver (Ag), and gold (Au) were employed for source and drain electrodes, and the mobility and the threshold voltage of ZTO TTFTs were observed as a function of electrode. The ZTO TTFTs adopting In as electrodes showed the highest mobility and the lowest threshold voltage. It was shown that Ag and Au are not suitable for the electrodes of ZTO TTFTs. As the results of this study, it is considered that the interface properties of electrode/ZTO are more influential in the properties of ZTO TTFTs than the conductivity of electrode.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.714-716
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• 2002

Indium tin oxide (ITO) was used as the top anode of top emission inverted organic light emitting diodes (TEIOLEDs). TEIOLEDs were fabricated by deposition of an aluminum bottom cathode, an N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1, 1'-diphenyl-4, 4 1'-diamine (TPD) hole transport layer, a tris-8-hydroxyquinoline aluminum ($Alq_3$) emission layer, and an ITO top anode sequentially. ITO was deposited by r.f. magnetron sputtering without $O_2$ flow during the deposition. After the deposition, the deposited ITO layer was kept under oxygen atmosphere for the oxidation. The characteristics of the TEOILED were affected significantly by the post-deposition oxidation condition.

• Transactions on Electrical and Electronic Materials
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• v.12 no.6
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• pp.267-270
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• 2011

In the process of inkjet-printed zinc tin oxide thin-film transistor, the effect of metallic interlayer underneath of source and drain electrode was investigated. The reason for the improved electrical properties with thin molybdenum oxide ($MoO_3$) layer was due to the chemically intermixed state of metallic interlayer, aluminum source and drain, and oxide semiconductor together. The atomic configuration of three Mo $3d_3$ and $3d_5$ doublets, three different Al 2p core levels, two Sn $3d_5$, and four different types of oxygen O 1s in the interfaces among those layers was confirmed by X-ray photospectroscopy.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1996.04b
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• pp.13-19
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• 1996

The tribological properties of the aluminum short fiber and glass fiber reinforced tin-bronze matrix composites manufactured by vacuum hot pressing was studied. The effect of the composition and the relative density on the wear properties was examined by a reciprocal type tribo-test machine. The results were discussed by the observation of the microstructure of sintered specimen and worn surface observation using SEM and EDS. Addition of the fibers led to the wear resistance since the metal matrix was reinforced by the fibers. The reinforcement of the fiber seemed to be stronger as the distribution of the fibers was more uniform. Graphite also reduce the wear loss. The pores in the sintered composites seemed to play an important role to improve the wear resistance since the pores provide the places where the solid lubricants locate.

• Journal of the Korean Applied Science and Technology
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• v.16 no.4
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• pp.307-311
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• 1999

Interfacial properties of electrode and organic thin layer is one of the most important factor in performing a Light Emitting Diodes(LED). Phthalocyanine copper was used as a buffer layer to improve interface characteristic, so that device efficiency was improved. In this study, LEDs were fabricated as like structures of Indium-Tin-Oxide (ITO) / N,N' -Diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) / 8-Hydroxyquinoline aluminum(Alq) / Aluminum(Al) and Indium-Tin-Oxide(ITO) / N,N'-Diphenyl-N,N' -di(m-tolyl)-benzidine(TPD) / 2-(4-Biphenylyl)-5(4-tert-butyl-phenyl)-1,3,4-oxadiazole(PBD) / Aluminum(Al). In these devices, CuPC was layered at electrode/organic layer interface. As position is changing and thickness is changing, devices showed characteristic luminescence efficiency and luminescence inensity respectively. We showed in this study that luminescence efficiency was improved with CuPC layer in LEDs. The efficiency of device with layer CuPC is higher than that of 2 layer CuPC. However, the luminescence of 2 layer CuPC device got higher value.

• Korean Journal of Metals and Materials
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• v.48 no.3
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• pp.248-255
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• 2010

The effect of various alloying elements and melt treatment on the microstructural control of Al-Sn metallic bearing alloy was investigated. The thickness of tin film crystallized around primary aluminum decreased with the addition of 5% Cu in Al-Sn alloy, with tin particles being reduced in size by intervening the Ostwald ripening. With the addition of Si in Al-10%Sn alloy, the tin particles were crystallized with eutectic silicon, resulting in uniform distribution of tin particles. With the addition of Cu and Si in Al-Sn alloy, both the tensile strength and yield strength increased, with the increasing rate of yield strength being less than that of tensile strength. Although the Al-10%Sn-7%Si alloy has similar tensile strength compared with Al-10%Sn-5%Cu, the former showed superior abrasion resistance, resulting from preventing the tin particles from movement to the abrasion surface.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.464-465
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• 2009

A new level shifter using n-channel aluminum-doped zinc tin oxide (AZTO) thin film transistors (TFTs) was proposed to integrate driving circuits on qVGA panels for mobile display applications. The circuit used positive feedback loop to overcome limitations of circuits designed with oxide TFTs which is depletion mode n-channel TFTs. The measured results shows that the proposed circuit shifts 10 V input voltage to 20 V output voltage and its power consumption is 0.46 mW when the supply voltage is 20 V and the operating frequency is 10 kHz.