• 센서학회지
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• 제1권2호
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• pp.165-172
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• 1992

3가와 5가 이온의 첨가가 전기전도도 및 감응도에 어떤 영향을 미치는가를 확인하기 위하여, In와 Sb를 Tin Oxide에 공침법으로 첨가하였다. Sb는 5가 이온으로 cassiterite 구조에 들어가서 열에너지에 의하여 이들 이온을 여기시켜 전도대로 밀어올리리라고 여겨진다. In 이온은 결정격자 속에 $In^{3+}$로 들어가서 원자가대로 부터 전자를 받게 되고 그러므로써 1가나 2가가 되리라 생각한다. 그러나, 이러한 현상들이 $SnO_{2}$에 존재하는 전위장벽을 2종의 이온첨가에 의하여 일어나는 resistivity에 끼치는 영향과 비교해 볼 때 감응도에는 어떤 영향을 보이는지 고찰하였다.

• 대한임베디드공학회논문지
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• 제2권2호
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• pp.76-81
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• 2007

A novel multi-layer type micro gas sensor for $NO_X$ detection was designed and fabricated. Micro platform defined as type II-1 in this article for micro gas sensor was fabricated using the MEMS technology to meet the demanding needs of lower power consumption. Nano composite materials were fabricated with nanosized tin oxide powder and $\underline{m}$ulti-$\underline{w}$all $\underline{c}$arbon $\underline{n}$ano $\underline{t}$ube (MWCNT) to improve sensitivity. We investigated characteristics of fabricated multi-layer type micro gas sensor with $NO_2$ concentration variations at constant 2.2 V. Sensitivity (S) of micro gas sensor were observed to increase from 2.9, to 7.4 and 11.2 as concentrations of $NO_2$ gases increased from 2.4 ppm, to 3.6 ppm and 4.9 ppm. When 2.4 ppm of $NO_2$ gas was applied, response time and recovery time of micro gas sensor were recorded as 101 seconds and 142 seconds, respectively.

• 센서학회지
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• 제30권3호
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• pp.175-180
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• 2021

In this paper, methods for improving the sensitivity of gas sensors to NO₂ gas are presented. A gas sensor was fabricated based on an SnO₂ nanowire network using the vapor-phase-growth method. In the gas sensor, the Au electrode was replaced with a fluorinedoped tin oxide (FTO) electrode, to achieve high sensitivity at low temperatures and concentrations. The gas sensor with the FTO electrode was more sensitive to NO₂ gas than the sensor with the Au electrode: notably, both sensors were based on typical SnO₂ nanowire network. When the Au electrode was replaced by the FTO electrode, the sensitivity improved, as the contact resistance decreased and the surface-to-volume ratio increased. The morphological features of the fabricated gas sensor were characterized in detail via field-emission scanning electron microscopy and X-ray diffraction analysis.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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• pp.309-312
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• 2001

A primitive gas classification system which can classify limited species of gas was designed and simulated. The 'electronic nose' consists of an array of 4 metal oxide gas sensors with different selectivity patterns, signal collecting unit and a signal pattern recognition and decision Part in PLD(programmable logic device) chip. Sensor array consists of four commercial, tin oxide based, semiconductor type gas sensors. BP(back propagation) neutral networks with MLP(Multilayer Perceptron) structure was designed and implemented on CPLD of fifty thousand gate level chip by VHDL language for processing the input signals from 4 gas sensors and qualification of gases in air. The network contained four input units, one hidden layer with 4 neurons and output with 4 regular neurons. The 'electronic nose' system was successfully classified 4 kinds of industrial gases in computer simulation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제34회 동계학술대회 초록집
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• pp.100-100
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• 2008

• 한국전기전자재료학회논문지
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• 제29권6호
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• pp.353-358
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• 2016

In this paper, we have studied about the optimum fabrication condition of the printed Indium Tin Oxide (ITO) layers for the electrical resistance-type sensor application. We have investigated on the substrates surface treatments, mixing ratio of organic binder/ITO powder, and viscosity of the printing paste to determine the optimum condition of the screen printed ITO layer. Also, we found that the printing condition is closely related with the sensor performance. To know the feasibility of printed ITO layer as an electrical resistance-type sensor, we have fabricated the ITO sensors with a printed and sputtered ITO layers. The printed ITO films revealed $10^2$ times higher sensitivity than the sputtered ITO layer. Also, the sputtered ITO layer exhibited an operating temperature of $127^{\circ}C$ at the operating voltage of 5 V. While, in case of the printed ITO layer showed the operating temperature of $27.6^{\circ}C$ in high operating voltage of 30 V. We found that the printed ITO layer is suitable for the various sensor applications.

• 한국재료학회지
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• 제23권12호
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• pp.667-671
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• 2013

We present an easy method of preparing two-dimensional (2D) periodic hollow tin oxide ($SnO_2$) hemisphere array gas sensors using polystyrene (PS) spheres as a template. The structures were fabricated by the sputter deposition of thin tin (Sn) metal over an array of PS spheres on a planar substrate followed by calcination at an elevated temperature to oxidize Sn to $SnO_2$ while removing the PS template cores. The $SnO_2$ hemisphere array structures were examined by scanning electron microscopy and X-ray diffraction. The structures were calcined at various temperatures and their sensing properties were examined with varying operation temperatures and concentrations of nitric oxide (NO) gas. Their gas-sensing properties were investigated by measuring the electrical resistances in air and the target gases. The measurements were conducted at different NO concentrations and substrate temperatures. A minimum detection limit of 30 ppb, showing a sensitivity of S = 1.6, was observed for NO gas at an operation temperature of $150^{\circ}C$ for a sample having an Sn metal layer thickness corresponding to 30 sec sputtering time and calcined at $600^{\circ}C$ for 2 hr in air. We proved that high porosity in a hollow $SnO_2$ hemisphere structure allows easy diffusion of the target gas molecules. The results confirm that a 2D hollow $SnO_2$ hemisphere array structure of micronmeter sizes can be a good structural morphology for high sensitivity gas sensors.

• Journal of Korean Society for Atmospheric Environment
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• 제20권E2호
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• pp.69-75
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• 2004

In this study, thin film gas sensor based on tin oxide was fabricated to examine its characteristics. Target gas is acetonitrile ($CH_3$CN) which is a blood simulant for the chemical warfare agent. Sensing materials are SnO$_2$ SnO$_2$/Pt, and Sn/Pt with thickness from 1000 to 3000 $\AA$. The sensor consists of a sensing electrode with inter-digit (IDT) type in front side and a heater in rear side. Resistance changes of sensing materials are monitored on real time basis using a data acquisition board with a 12-bit analog to digital converter. Sensitivities are measured at different operating temperatures also with different gas concentrations and film thickness. The high sensitivity is obtained for Sn (3000 $\AA$)/Pt (30 $\AA$) at 30$0^{\circ}C$ for 3 ppm. Response and recovery times were about 40 and 160 s, respectively. Repetition measurements showed very good results with $\pm$3% in full scale range.

• 한국재료학회지
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• 제26권2호
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• pp.84-89
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• 2016

We present the rectifying and nitrogen monoxide (NO) gas sensing properties of an oxide semiconductor heterostructure composed of n-type zinc oxide (ZnO) and p-type copper oxide thin layers. A CuO thin layer was first formed on an indium-tin-oxide-coated glass substrate by sol-gel spin coating method using copper acetate monohydrate and diethanolamine as precursors; then, to form a p-n oxide heterostructure, a ZnO thin layer was spin-coated on the CuO layer using copper zinc dihydrate and diethanolamine. The crystalline structures and microstructures of the heterojunction materials were examined using X-ray diffraction and scanning electron microscopy. The observed current-voltage characteristics of the p-n oxide heterostructure showed a non-linear diode-like rectifying behavior at various temperatures ranging from room temperature to $200^{\circ}C$. When the spin-coated ZnO/CuO heterojunction was exposed to the acceptor gas NO in dry air, a significant increase in the forward diode current of the p-n junction was observed. It was found that the NO gas response of the ZnO/CuO heterostructure exhibited a maximum value at an operating temperature as low as $100^{\circ}C$ and increased gradually with increasing of the NO gas concentration up to 30 ppm. The experimental results indicate that the spin-coated ZnO/CuO heterojunction structure has significant potential applications for gas sensors and other oxide electronics.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 Ⅲ
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• pp.1549-1552
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• 2003

Semiconductor gas sensor using tin oxide as sensing material has been used to detect gases based on the fact that impedance of the sensing material varies when the gas sensor is exposed to the gases. This variation comprises of two parts. The first one is variation in resistance of the sensing material and the other is expressed in terms of the sensor capacitance variation. Normally, only variation of the sensor resistance is considered. In this paper, using AC measurement with a capacitor-coupled inverting amplifier circuit, both changes in the sensor resistance and variations in the sensor capacitance were investigated. These characteristics were represented as magnitude gain and phase shift of AC signal at a specific frequency after passing it through the sensor and the designed circuit. A two-stage artificial neural network, which utilized the information above, was employed to identify and quantify three combustible gases: methane, propane and butane. The network outputs were approximately proportional to concentrations of test gases with reasonable level of error.