• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.456-460
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• 1999

Transparent conducting tin (IV) oxide thin films have been studies and developed for the electrode materials of solar cell substrate. Fabrication of tin oxide thin films by sol-gel method is process development of lower cost photovoltaic solar cell system. The research is focused on the establishment of process condition and development of precursor. The precursor solution was made of tin isopropoxide dissolved in isopropyl alcohol. The hydrolysis rate was controlled by addition of triethanolamine. Dip and spin coating technique were applied to coat tin oxide on borosilicate glass. The resistivity of the thin film was lower than 0.1Ω-cm and the transmittance is higher than 90% in a visible range.

• Journal of the Korean Electrochemical Society
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• v.3 no.1
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• pp.15-18
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• 2000

Transparent conducting tin (IV) oxide thin films have been studied and developed for the electrode materials of solar cell substrate. Fabrication of tin oxide thin films by sol-gel method is process development of lower cost photovoltaic solar cell system. The research is focused on the establishment of process conditions and development of precursor. The precursor solution was made of tin isopropoxide dissolved in isopropyl alcohol. The hydrolysis rate was controlled by addition of triethanolamine. Dip and spin coating technique were applied to coat tin oxide on borosilicate glass. The resistivity of the thin film was lower than 0.01-cm and the transmittance is higher than $90\%$ in a visible range.

• Korean Journal of Materials Research
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• v.4 no.8
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• pp.861-869
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• 1994

Chemical vapor deposition using titanium tetra isopropoxide(TTIP) was employed to investigate effects of process parameters on the uniformity of $TiO_{2}$this films deposited on Indium Tin Oxide (ITO)coated glass. Deposition experiments were carried out at temperatures ranging from $300^{\circ}C$ to $400^{\circ}C$ under the pressure of 0.5~2 torrin a cold wall reactor which can handle 200mm substrate. It was found that the growth rate of $TiO_{2}$was closely related to the reaction temperature and the ractant gas compositions. Apparent activation energy for the deposition rate was 62.7lkJ/mol in the absence of $O_{2}$ and 100.4kj/mol in the presence of $O_{2}$, respectively. Homogeneous reactions in the gas phase were promoted when the total pressure of the reactor was increased. Variance in the film thickness was less than a few percent, but at high deposition rates film thickness was less uniform. Effects of reaction temperature on $TiO_{2}$ thin film characteristic was investigated with SEM, XRD and AES.

• Journal of the Korean Electrochemical Society
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• v.3 no.1
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• pp.11-14
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• 2000

Transparent conducting ITO thin films have been studied and developed for the solar cell substrate or LCD substrate. ITO thin film has been mostly fabricated by high cost sputtering method. In this research, sol-gel method is applied to fabricate ITO thin film at lower cost. The research is focused on the establishment of process condition and development of precursor. Organic sol was made of indium tri-isopropoxide dissolved in ethylene glycol monoethyl ether. The hydrolysis was controled by addition of acetyl acetone. Tin(IV) chloride was added as dopant. Inorganic sol was made of indium acetate dissolve din normal propanol. Spin coating technique was applied to coat ITO on borosilicate glass. The resistivity of ITO thin film was approximately $0.01\Omega{\cdot}cm$ and the transmittance is higher than $90\%$ in a visible range.