• The Journal of Korean Academy of Prosthodontics
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• v.29 no.1
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• pp.13-22
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• 1991

This study investigated the effects of surface treatment on the tensile bond strength of resinbonded prosthesis. The Rexillium III specimens were treated with $50{\mu}m\;Al_2O_3$ blasting. Type IV gold alloy specimens were treated with $400^{\circ}C$ heating and tin plating method. All specimens were bonded with MBAS composite resin cement and followed by immersion test into the $37^{\circ}C$ water bath for 7 days. The specimens were debonded in tension with an Instron machine and observed with SEM. The modes of failure were recorded also. The following conclusions were obtained : 1. The tensile bond strength decreased in following order. $50{\mu}m\;Al_2O_3$ basted Resillium III group, Type IV gold alloy group treated with $400^{\circ}C$ heat and tin plating type IV gold alloy group, and statistical significant differences were observed(p<0.05). 2. The tensile bond strength decreased in all groups after 7 days immersion test, but statistical significant differences were observed in Rexillium III specimens only. 3. The sharp and irregular surface were observed in Rexillium III, but $400^{\circ}C$ heat treated and tin plated groups had round and broad surface in SEM. 4. The models of bond failure were cohesive-adhesive failure mainly.

• The Journal of Korean Academy of Prosthodontics
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• v.33 no.4
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• pp.662-684
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• 1995

The purpose of this study was to evaluate the shear bond strength between various resin-bonded retainers and enamel according to the adhesive resins and retention types and observe the bond filure modes with scanning electron microscope(SEM). For this purpose, the followin eight sub-groups were tested in shear bond strength : 1) electrochemically etched group(Verabond) using Panavia EX and Superbond C&B 2) tin-plated group(PG-S) using Panavia EX and Superbond C&B 3) salt-treated group(Verabond) using Panavia EX and Superbond C&B 4) meshtreated group(Verabond) using Panavia EX and Superbond C&B. Thermocycling test was conducted on the condition of 15 second dwell time each in $5^{\circ}C$ and $55^{\circ}C$bath. Shear bond strength was measured by Instron Universal Testing Machine(medel 1125). The obtained results were as follows : 1. After thermocycling, the shear bond strengths of tin-plated group and electrochemically etched group were significantly greater than those of salt-treated group and mesh-treated group. And the shear bond strength of Panavia EX was greater than that of Superbond C&B with salt-treated group and tin-plated group(p<0.05). 2. Before thermocycling, electrochemically etched group using Superbond C&B produced the greatest shear bond strength(p<0.01). 3. The shear bond strength of electrochemically etched group using Superbond C&B was significantly decreased after thermocycling(p<0.01). 4. In observation of bond failure modes before thermocycling, Panavia EX highly exhibited enamel fracture. Tin-plated group using Superbond C&B adhesive failure between metal and resin and electrochemically etched group using Superbond C&B exhibited adhesive failure between enamel and rdsin. 5. In observation of failure modes after thermocycling, Panavia EX exhibited cohesive failure and Superbond C&B exhibited adhesive failure between resin and metal.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.903-906
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• 2011

The electroplating and electro-less plating methods have been applied for the high density chip interconnect of the Copper Pillar Tin Bump (CPTB) preparation. The CPTB was prepared, which had been electroplated about $100{\mu}m$ pitch of copper layer firstly, and then the Tin layer was deposited on the copper pillar surface to protect the oxidation of it. It was also very important to get uniform thickness of electroplated copper layer, though it was difficult and sensitive. In order to control the thickness distribution, it was examined that the current separating disk of Insulating Gate with a hole in the center was installed between electrodes. The current flows through the center hole of the Insulating Gate in the cylindrical electroplating bath and the other parts were blocked to protect current flowing. The main current flowed through the center hole of the Insulating Gate directly to the opposite electrode of wafer disk. As the results, it was verified that the copper layer was thick in the center part of wafer disk with distribution of thinner to the outer part toward edge.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.118.2-118.2
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• 2011

In order to increase the energy conversion efficiency of dye-sensitized solar cells (DSSCs), we employed a counter electrode that was platinum coated using a doctor blade technique on synthesized ZnO nanostructures on fluorinedoped tin oxide (FTO). The ZnO nanostructures possessing high electrochemical activity and large surface area of the counter electrode were grown by a chemical bath deposition (CBD) method at various times, 2, 4, and 8 h. The efficiency of DSSC with the Pt-ZnO counter electrode was improved 7.01% (grown for 2 h), 7.63% (grown for 4 h), and 6.13% (grown for 8 h), respectively. Compared with a standard DSSC without ZnO nanostructures, whose efficiency was 6.27%, the energy conversion efficiency increased approximately 22% for the DSSC with the Pt-ZnO (grown for 4 h) electrode. It indicates that the Pt coated on the ZnO nanostructure improves the electrocatalytic activity of the counter electrode.

• Journal of Institute of Control, Robotics and Systems
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• v.14 no.4
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• pp.327-331
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• 2008

An in-line wet etch/cleaning system was established for the research and development in wet etch process as a formation of electrode such as metal or transparent conductive oxide layer. A reverse moving system was equipped in the in-line wet etch/cleaning system for the alternating motion of glass substrate in a wet etch bath of the system. Therefore, it was possible for the glass substrate to be moved back and forth and it was possible to reduce the size of the system by using the reversing moving system. For the effect of the alternating motion of substrate on the etch rate in the in-line wet etch bath, indium tin oxide(ITO) patterns were obtained through wet etch process in the in-line system in which the substrate was moved back and forth. From the CD(critical dimension) skews resulted from the ADI CD and ACI CD of the ITO patterns, it was concluded that the alternating motion of glass substrate are possible to be applied to the mass production of wet etch process.

• Korean Journal of Materials Research
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• v.25 no.12
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• pp.708-712
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• 2015

This study reports the effects of $H_2S$ gas concentration on the properties of $Cu_2ZnSnS_4(CZTS)$ thin films. Specifically, sulfurization process with low $H_2S$ concentrations of 0.05% and 0.1%, along with 5% $H_2S$ gas, was studied. CZTS films were directly synthesized on Mo/Si substrates by chemical bath deposition method using copper sulfate, zinc sulfate heptahydrate, tin chloride dihydrate, and sodium thiosulfate pentahydrate. Smooth CZTS films were grown on substrates at optimized chemical bath deposition condition. The CZTS films sulfurized at low $H_2S$ concentrations of 0.05 % and 0.1% showed very rough and porous film morphology, whereas the film sulfurized at 5% $H_2S$ yielded a very smooth and dense film morphology. The CZTS films were fully crystallized in kesterite crystal form when they were sulfurized at $500^{\circ}C$ for 1 h. The kesterite CZTS film showed a reasonably good room-temperature photoluminescence spectrum that peaked in a range of 1.4 eV to 1.5 eV, consistent with the optimal bandgap for CZTS solar cell applications.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

• Journal of Electrochemical Science and Technology
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• v.8 no.3
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• pp.206-214
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• 2017

SnS films have been prepared by electrodeposition technique onto Cu and ITO substrates using acidic solutions containing tin chloride and sodium thiosulfate with sodium citrate as an additive. The effects of sodium citrate on the electrochemical behavior of electrolyte bath containing tin chloride and sodium thiosulfate were investigated by cyclic voltammetry and chronoamperometry techniques. Deposited films were characterized by XRD, FTIR, SEM, optical, photoelectrochemical, and electrical measurements. XRD data showed that deposited SnS with sodium citrate on both substrates were polycrystalline with orthorhombic structures and preferential orientations along (111) directions. However, SnS films with sodium citrate on Cu substrate exhibited a good crystalline structure if compared with that deposited on ITO substrates. FTIR results confirmed the presence of SnS films at peaks 1384 and $560cm^{-1}$. SEM images revealed that SnS with sodium citrate on Cu substrate are well covered with a smooth and uniform surface morphology than deposited on ITO substrate. The direct band gap of the films is about 1.3 eV. p-type semiconductor conduction of SnS was confirmed by photoelectrochemical and Hall Effect measurements. Electrical properties of SnS films showed a low electrical resistivity of $30{\Omega}cm$, carrier concentration of $2.6{\times}10^{15}cm^{-3}$ and mobility of $80cm^2V^{-1}s^{-1}$.

• Journal of Sensor Science and Technology
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• v.13 no.6
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• pp.411-416
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• 2004

In the international temperature scale of 1990 (ITS-90), standard platinum resistance thermometer (SPRT) is a defining standard thermometer used in the temperature range from 13.8033 K to $961^{\circ}C$. Uncertainty of SPRT is about several mK and uncertainty of defining fixed points of the ITS-90 which is used for calibrating SPRT is about several tenth of mK. Above $0^{\circ}C$. the defining fixed points are gallium melting point and indium, tin, zinc, aluminium and silver freezing points which are all realized using an electric furnace or a liquid bath. To realize freezing point of tin ($231.928^{\circ}C$) and zinc ($419.527^{\cir}C$), two 3-zone furnaces which have 3 electric heaters were manufactured. Temperature gradient of the constructed furnaces were tested. Uncertainty caused by temperature gradient of furnace and immersion effect of SPRT in the sealed-type freezing point cells were evaluated 0.038 mK for tin freezing point and 0.036 mK for zinc freezing point.

• Textile Coloration and Finishing
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• v.12 no.2
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• pp.129-137
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• 2000

Silk fabrics were dyed by Cochineal extracts after mordanted with various mordants and their properties of dyeing, fastness and change of surface color were investigated. Silk fabrics were mordanted with aluminum potassium sulfate, copper acetate, tin chloride, iron sulfate or chromium potassium sulfate at $60^\circ{C}$ for 30 minutes and subsequently dyed at $60^\circ{C}$ for 60 minutes unless mentioned otherwise. The dye-uptake of silk fabrics increased with the concentration of Cochineal extracts and mordants used. Maximum dye-uptake was obtained at pH 3.5-4, regardless of the type of mordants used. Surface color of silk fabrics changed from red purple to purple when mordanted with Al or Cu mordant, from purple to purple blue with Fe mordant and showed red purple with Sn or Cr mordant, respectively. It also changed according to pH of dyeing bath. Dyed silk fabrics showed poor light fastness but good dry-cleaning, perspiration and rubbing fastness.