• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.111-114
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• 1999

Electroluminescence(EL) devices based on organic thin films have been attracted lots of interests in large-area light-emitting display. In this stuffy, an emissive layer was fabricated using Langmuir-Blodgett(LB) technique in organic light-emitting (OLEDs). This emissive organic material was synthesized and named PECCP[poly(3.6-N-2-ethylhexyl carbazolyl cyanoterephthalidene)] which has a strong electron donor group and an electron acceptor group in main chain repeated unit. This material has good solubility in common organic solvents such as chloroform. THF, etc, and has a good stability in air. The Langmuir-Blodgett(LB) technique has the advantage of precise control of the thickness down to the molecular scale, In particular, by varying the film thickness it is possible to investigate the metal/polymer interface. Optimum conditions for the LB film deposition are usually determined by investigating a relationship between a surface pressure $\pi$ and an effective are A occupied by one molecule on the subphase. The LB films were deposited on an indium-tin-oxide(ITO) glass at a surface pressure of 10 mN/m and dipping speed of 12 mm/min after spreading PECCP solution on distilled water surphase at room temperature, Cell structure was ITO/PECCP LB film/Alq$_3$/Al. We considered PECCP as a hole -transport layer inserted between the emissive layer and ITO. We also used Alq$_3$ as an emissive layer and an electron transport layer. We measured current-voltage(I-V) characteristics, UV/visible absorption, PL spectrum and EL spectrum of the OLEDs.

• KIEE International Transactions on Electrophysics and Applications
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• v.11C no.3
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• pp.70-74
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• 2001

Admittance or impedance spectroscopy is one of the powerful tools to study dielectric relaxation and loss processes in organic and inorganic materials. In this study, the frequency dependent properties of an indium tin oxide/tris(8-hydroxyquinoline) aluminum($Alq_3$)/aluminum structure have been studied. The conductance of the $Alq_3$ film increases with the DC applied voltage up to 4V and decreases above 4V in the low frequency region. This indicates that the resistance of the device decreases with the applied bias due to the carrier injection enhancement, thereafter the injected carriers form the space charge and the additional injection of carriers is prevented. The Cole-Cole plot of the admittance takes a one-semicircle shape, which means that the device can be modeled as a parallel resistor-capacitor network. The resistance and capacitance were estimated as 8.62k${\Omega}$ and 2.7nF, respectively, at 3V in the low frequency region. The dielectric constant ( ${\epsilon}'$ ) of the $Alq_3$ film is independent of the frequency in the low frequency region below 100kHz, while the frequency dependency was observed at above 100kHz. The dielectric loss factor ( ${\epsilon}"$ ) of the $Alq_3$ film shows the dielectric dispersion below 100kHz and dielectric absorption in higher frequency domain. The dispersion is thought to be related to the hopping process of the carriers. The ${\epsilon}"$ is proportional to the reciprocal of the frequency. The dielectric relaxation time was extracted to about 0.318${\mu}s$ from the dielectric absorption spectrum.

• Journal of the Korean Ceramic Society
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• v.40 no.11
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• pp.1073-1077
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• 2003

The Sn $O_2$-based gas sensors can detect inflammable and toxic gases of low concentration by the modulation of surface resistance, but they lack in selectivity on the whole. To give selectivity to the Sn $O_2$-based gas sensors, studies on the sensing mechanism, selective gas sensing materials and signal processing techniques are demanded. Ethanol (C$_2$ $H_{5}$OH) and acetonitrile ($CH_3$CN) were confirmed to undergo catalytic oxidation on Sn $O_2$ by gas chromatography. PdCl$_2$-doped Sn $O_2$ showed excellent sensitivity to ethanol and acetonitrile, while La$_2$ $O_3$-doped Sn $O_2$ showed excellent sensitivity to ethanol, but poor sensitivity to acetonitrile. Using these two sensors and pattern recognition, the selectivity to acetonitrile is greatly enhanced. The minimum detection level of acetonitrile was 15 ppm in air and 20 to 100 ppm when exposed to interfering gases together with acetonitrile.

• Journal of the Korean Ceramic Society
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• v.52 no.2
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• pp.103-107
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• 2015

The effective glass frit composition used to absorb laser energy and to seal commercial dye-sensitized solar cell panel substrates has been previously developed using $V_2O_5-TeO_2$-based glass with 10 wt% ${\beta}$-eucryptite as a CTE controlling filler. The optimum sealing conditions are provided using a 3 mm beam, a laser power of 40 watt, a scan speed of 300 mm/s, and 200 irradiation cycles. In this study, the feasibility of the developed glass frit is investigated in terms of the sealing strength and chemical durability against the commercial iodide/triiodide electrolyte solution and fluorine-doped tin oxide (FTO) electrode in order to increase the solar cell lifetime. The sealing strength of the laser-sealed $V_2O_5-TeO_2$-based glass frit is $20.5{\pm}1.7MPa$, which is higher than those of thermally sealed glass frit and other reported glass frit. Furthermore, the developed glass frit is chemically stable against electrolyte solutions. The glass frit constituents are not leached out from the glass after soaking in the electrolyte solution for up to three months. During the laser sealing, the glass frit does not react with the FTO electrode; thus, the resistivity of the FTO electrode beneath the laser-sealed area remains the same.

• Journal of the Korean Ceramic Society
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• v.54 no.3
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• pp.243-248
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• 2017

Pd-doped $SnO_2$ thick film with a pure tetragonal phase was prepared on patterned Pt electrodes by an ink dropping method. Nanostructured $SnO_2$ powder with a diameter of 10 nm was obtained by a modified hydrazine method. Then the ink solution was fabricated by mixing water, glycerol, bicine and the Pd-doped $SnO_2$ powder. When the Pd doping concentration was increased, the grain size of the Pd-doped $SnO_2$ thick film became smaller. However, an agglomerated and extruded surface morphology was observed for the films with Pd addition over 4 wt%. The orthorhombic phase disappeared even at a low Pd doping concentration and a PdO peak was obtained for a high Pd doping concentration. The crack-free Pd-doped $SnO_2$ thick films were able to successfully fill the $30{\mu}m$ gap of the patterned Pt electrodes by the optimized ink dropping method. The prepared 3 wt% Pd-doped $SnO_2$ thick films showed monoxide gas responses ($R_{air}/R_{CO}$) of 4.0 and 35.6 for 100 and 5000 ppm, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.8
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• pp.1873-1878
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• 2013

ITZO ($In_2O_3$ : $SnO_2$ : ZnO = 90wt.% : 5wt.% : 5wt.%) thin films were fabricated on glass substrates (Eagle 2000) at room temperature with various working pressures (1~7 mTorr) by RF magnetron sputtering. The influence of the working pressure on the structural, electrical, and optical properties of the ITZO thin films were investigated. The XRD and FESEM results showed that all ITZO thin films are amorphous structures with very smooth surfaces regardless of the working pressure. Amorphous ITZO thin films deposited at 3 mTorr showed the best properties, such as a low resistivity, high transmittance, and figure of merit of $3.08{\times}10^{-4}{\Omega}{\cdot}cm$, 81 %, and $10.52{\times}10^{-3}{\Omega}^{-1}$, respectively.

• Electrical & Electronic Materials
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• v.7 no.3
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• pp.243-251
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• 1994

ITO(Indium Tin Oxide) film with thickness of 1500.angs. was prepared by an e-beam evaporator onto a glass and a p-type InP wafer (100) LEC grown Zn-doped p=2.3*10$\^$16/cm$\^$-3/), in which the components of ITO used for evaporation source were hot pressed pellets 1 mole% ln$\_$2/O$\_$3/+9 mole% SnO$\_$2/, and evaporated in O$\_$2/ ambient. The optimum conditions to preparation of ITO thin film were the substrate temperature of 350.deg. C, the injected oxygen pressure of 2*10$\^$-4/ torr, and the evaporation speed of 0.2-0.3.angs./sec, respectively. In these optimum conditions, the resistivity and the carrier concentration were 5.3*10$\^$-3/ .ohm.-cm, 6.5*10$\^$20/cm$\^$-3/, and the transmittance was over 80%. From the results of J-V measurements in ITO/p-InP structure solar cells, the higher pressure of injected oxygen, the more open circuit voltage. The efficiency of ITO/p-InP solar cell without the grid line contact, prepared by the optimum evaporation conditions, was 7.19%. By using the grid line contact, the efficiency, the open circuit voltage, the short circuit current density, the fill factor, the series resistance, and the shunt resistance were 8.5%, 0.47V, 29.48 mAcm$\^$-2/ , 61.35%, 3.ohm., and 26.6k.ohm., respectively.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1645-1646
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• 2006

Micro ElectroMechanical Systems (MEMS) 기술을 이용한 초미세 유체 제어 시스템 (마이크로 펌프, 마이크로 밸브, 마이크로 채널, 마이크로 믹서 등)은 화학, 생명분야의 DNA 분석, 항원-항체 분석, 질병의 진단 등에 사용되는 lab-on-a-chip, micro total analysis system ($\mu$-TAS) 등에서 화학 및 바이오 유체를 제어하는 분석 시스템의 일부분으로서 사용되며 필수적으로 요구된다. 본 논문에서는 이러한 microchip을 구현하기 위해 초미세 유체 제어 소자인 마이크로 펌프와 밸브를 같은 기관 위에 polydimethylsiloxane (PDMS)와 indium tin oxide (ITO)-Glass를 사용하여 동일한 구조로 집적 하였다. 마이크로 펌프의 pumping rate은 인가 직류 펄스 전력의 주파수와 duty 비를 변화시켜 최적화하였다. 직류 펄스 전력 500 mW를 인가하였을 때 주파수 2 Hz, duty 비 7 %에서 약 $1.05{\mu}l/min$의 최대 유량이 측정되었다. 마이크로 밸브는 ITO 히터에 전력을 인가함으로서 유량의 on/off 제어가 잘 됨을 확인할 수 있었고 유체를 closing하기 위해 필요한 전력은 약 300 mW이다.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.2
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• pp.208-212
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• 2013

Dye-sensitized solar cells (DSCs) have taken much attention due to their low cost and easy fabrication method compare to silicon solar cells. But research on cost effective DSC is prerequisite for commercialization. Fluorine doped tin oxide (FTO) which have been commonly used for electrode substrate as electron collector occupied most percentage of manufacturing cost. Therefore we studied FTO-less DSC using sputtered Ti deposited glass as photoelectrode instead of FTO to reduce manufacturing cost. Ti films sputtered on the glass for different time, 5 to 20 minutes with decreasing sheet resistance as deposition time increases. A light source illuminated to counter electrode in order to overcome opaque Ti films. The efficiency of DSC (Ti20) made Ti sputtered glass for 20 min as photoelectrode was 5.87%. There are no significant difference with conventional cell despite lower manufacturing cost.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.7
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• pp.1514-1519
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• 2009

We fabricated the GaNLED emitting 400 nm wavelength and improved the optical extraction efficiency by making surface patterns on n-GaN layer and ITO layer above p-GaN. In addition, the light reflection metal under the n and p pad is made and the light reflection metal is installed on the backside of the chip. The light extraction efficiency is increased by 20 % with texturing n-GaN layer and 18% with texturing ITO layer at 20 mA. Compared to planar-surface LED, the light extraction efficiency for surface texturing both n-GaN and ITO is increased by 32% at 20mA.