• Bulletin of the Korean Chemical Society
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• v.32 no.8
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• pp.2765-2770
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• 2011

Organic dye-doped glasses, viz., ruthenium (II) tris(4,7'-diphenyl-1,10'-phenanthroline) $[Ru(dpp)_3]^{2+}$ incorporated into thin silica xerogel films produced by the sol-gel method, were prepared and their $O_2$ quenching properties investigated as a function of the $[Ru(dpp)_3]^{2+}$ concentration (3-400 ${\mu}M$) within the xerogel. The ratio of the luminescence from the $[Ru(dpp)_3]^{2+}$-doped films in the presence of $N_2$ and $O_2$ ($I_{N2}/I_{O2}$) was used to describe the film sensitivity to $O_2$ quenching. ($I_{N2}/I_{O2}$ changed three-fold over the $[Ru(dpp)_3]^{2+}$ concentration range. Time-resolved intensity decay studies showed that there are two discrete $[Ru(dpp)_3]^{2+}$ populations within the xerogels (${\tau}_1$ ~ 300 ns; ${\tau}_2$ ~ 3000 ns) whose relative fraction changes as the $[Ru(dpp)_3]^{2+}$ concentration changes. The increased $O_2$ sensitivity that is observed at the higher $[Ru(dpp)_3]^{2+}$ concentrations is a manifestation of a greater fraction of the 3000 ns $[Ru(dpp)_3]^{2+}$ species (more susceptible to $O_2$ quenching). A model is presented to describe the observed response characteristics resulting from $[Ru(dpp)_3]^{2+}$ distribution within the xerogel.

• Bulletin of the Korean Chemical Society
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• v.28 no.8
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• pp.1249-1255
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• 2007

We have investigated the photophysical properties of dansyl-N-methylaminobenzoic acid (DABAH) as a ligand and its lanthanide (Ln3+)-cored complexes (Ln3+-(DABA)3(terpy)) in order to determine the main energy transfer pathway for sensitized near infrared emission of Ln3+ ions (Ln3+ = Nd3+ and Er3+) in Ln3+- (DABA)3(terpy). The fluorescence spectrum of DABAH shows a large Stokes shift with increasing solvent polarity. This large Stokes shift might be due to the formation of a twisted intramolecular charge transfer (TICT) state, as demonstrated by the large dipole moment in the excited state. It is in good agreement with the result that the phosphorescence even in the Gd3+-cored complex based on the DABAH ligand was not observed, maybe due to the highly forbidden character of the S1 → T1 transition in the DABAH ligand. A short decay component (ca. 1 ns) was observed in Er3+-(DABA)3(terpy) whereas the fluorescence lifetimes of DABAH and its Gd3+-(DABA)3(terpy) are observed about ~10 ns. The short component could be originated from the energy transfer process between the ligand and the Ln3+ ion. Based on the fluorescence of DABAH its Ln3+- (DABA)3(terpy), the sensitization of Ln3+ luminescence in the Ln3+-(DABA)3(terpy) takes place by the energy transfer via the TICT state of DABAH in the excited singlet state rather than via the excited triplet state.

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.321-326
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• 2013

The effect of rapid thermal annealing (RTA) on the optical properties of digital-alloy InGaAlAs multiple quantum well (MQW) structures have been investigated by using photoluminescence (PL) and time-resolved PL measurements as a function of RTA temperature. The MQW samples were annealed from $700^{\circ}C$ to $850^{\circ}C$ for 30 s in a nitrogen atmosphere. The MQW sample annealed at $750^{\circ}C$ exhibited the strongest PL intensity and the narrowest FWHM (Full width at half maximum), indicating the reduced nonradiative recombination centers and the improved interfaces between the wells and barriers. The MQW samples annealed at $800^{\circ}C$ and $850^{\circ}C$ showed the decreased PL intensities and blueshifted PL peaks compared to $750^{\circ}C$-annealed sample. The blueshift of PL peak with increasing RTA temperatures are ascribed to the increase of aluminum due to intermixing of gallium (Ga) and aluminum (Al) in the interfaces of InGaAs/InAlAs short-period superlattices. The decrease of PL intensity after annealing at $800^{\circ}C$ and $850^{\circ}C$ are attributed to the interface roughening and lateral composition modulation caused by the interdiffusion of Ga and Al and indium segregation, respectively. With increasing RTA temperature the PL decay becomes slower, indicating the decrease of nonradiative defect centers. The optical properties of digital-alloy InGaAlAs MQW structures can be improved significantly with optimum RTA conditions.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.16 no.4
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• pp.397-410
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• 2018

When considering the long-term safety assessment of spent-nuclear fuel management, americium is one of the most radio-toxic actinides. Although spectroscopic methods are widely used for the study of actinide chemistry, application of those methods to americium chemistry has been limited. Herein, we purified $^{241}Am$ to obtain a highly pure stock solution required for spectroscopic studies. Quantitative and qualitative analyses of purified $^{241}Am$ were carried out using liquid scintillation counting, and gamma and alpha radiation spectrometry. Highly sensitive absorption spectrometry coupled with a liquid waveguide capillary cell and time-resolved laser fluorescence spectroscopy were employed for the study of Am(III) hydrolysis and oxalate (Ox) complexation. $Am^{3+}$ ions under acidic conditions exhibit maximum absorbance at 503 nm, with a molar absorption coefficient of $424{\pm}8cm^{-1}{\cdot}M^{-1}$. $Am(OH)_3(s)$ colloidal particles formed under near neutral pH conditions were identified by monitoring the absorbance at around 506-507 nm. The formation of ${Am(Ox)_3}^{3-}$ was detected by red-shifts of the absorption and luminescence spectra of 4 and 5 nm, respectively. In addition, considerable enhancements of the luminescence intensities were observed. The luminescence lifetime of ${Am(Ox)_3}^{3-}$ increased from 23 to 56 ns, which indicates that approximately six water molecules are replaced by carboxylate ligands in the inner-sphere of the Am(III). These results suggest that ${Am(Ox)_3}^{3-}$ is formed through the bidentate coordination of the oxalate ligands.

• Journal of the Korean Vacuum Society
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• v.20 no.6
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• pp.449-455
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• 2011

The luminescence properties of $In_{0.5}Ga_{0.5}As/In_{0.5}Al_{0.5}As$ multiple quantum wells (MQWs) grown on $In_{0.4}Al_{0.6}As$ buffer layer have been investigated by using photoluminescence (PL) and time-resolved PL measurements. A 1-${\mu}m$-thick $In_{0.4}Al_{0.6}As$ buffer layers were deposited at various temperatures from $320^{\circ}C$ to $580^{\circ}C$ on a 500-nm-thick GaAs layer, and then 1-${\mu}m$-thick $In_{0.5}Al_{0.5}As$ layers were deposited at $480^{\circ}C$, followed by the deposition of the InGaAs/InAlAs MQWs. In order to study the effects of $In_{0.4}Al_{0.6}As$ layer on the optical properties of the MQWs, four different temperature sequences are used for the growth of $In_{0.4}Al_{0.6}As$ buffer layer. The MQWs consist of three $In_{0.5}Al_{0.5}As$ wells with different well thicknesses (2.5-nm, 4.0-nm, and 6.0-nm-thick) and 10-nm-thick $In_{0.5}Al_{0.5}As$ barriers. The PL peaks from 4-nm QW and 6-nm QW were observed. However, for the MQWs on the $In_{0.4}Al_{0.6}As$ layer grown by using the largest growth temperature variation (320-$580^{\circ}C$), the PL spectrum only showed a PL peak from 6-nm QW. The carrier decay times in the 4-nm QW and 6-nm QW were measured from the emission wavelength dependence of PL decay. These results indicated that the growth temperatures of $In_{0.4}Al_{0.6}As$ layer affect the optical properties of the MQWs.

• Journal of the Korean Vacuum Society
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• v.22 no.2
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• pp.86-91
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• 2013

The optical properties of InAs quantum dots (QDs) grown on GaAs substrates grown by molecular beam epitaxy have been studied using photoluminescence (PL) and time-resolved PL measurements. InAs QDs were grown using an arsenic interruption growth (AIG) technique, in which the As flux was periodically interrupted by a closed As shutter during InAs QDs growth. In this study, the shutter of As source was periodically opened and closed for 1 (S1), 2 (S2), or 3 s (S3). For comparison, an InAs QD sample (S0) without As interruption was grown in a pure GaAs matrix for 20 s. The PL intensity of InAs QD samples grown by AIG technique is stronger than that of the reference sample (S0). While the PL peaks of S1 and S2 are redshifted compared to that of S0, the PL peak of S3 is blueshifted from that of S0. The increase of the PL intensity for the InAs QDs grown by AIG technique can be explained by the reduced InAs clusters, the increased QD density, the improved QD uniformity, and the improved aspect ratio (height/length). The redshift (blueshift) of the PL peak for S1 (S3) compared with that for S0 is attributed to the increase (decrease) in the QD average length compared to the average length of S0. The PL intensity, PL peak position, and PL decay time have been investigated as functions of temperature and emission wavelength. S2 shows no InAs clusters, the increased InAs QD density, the improved QD uniformity, and the improved QD aspect ratio. S2 also shows the strongest PL intensity and the longest PL decay time. These results indicate that the size (shape), density, and uniformity of InAs QDs can be controlled by using AIG technique. Therefore the emission wavelength and luminescence properties of InAs/GaAs QDs can also be controlled.

• Journal of the Korean Society of Radiology
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• v.9 no.1
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• pp.39-45
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• 2015

$La_2W_3O_{12}:Eu^{3+}$ phosphors were prepared by solid state reaction method. The crystal structure was characterized by XRD pattern and ICSD card (78180). Luminescence properties of $La_2W_3O_{12}:Eu^{3+}$ are investigated by optical and laser-excitation spectroscopy in which emission and excitation spectra and time-resolved spectra are measured. The 1 mol % $Eu^{3+}$-doped $La_2W_3O_{12}$ phosphor exhibits broad excitation band peaking at 286 nm due to the ligand-to-metal charge transfer transition. The excitation lines due to the $^7F_0{\rightarrow}{^5D_4},{^5D_4},{^5L_6},{^5G_4},{^5D_3},{^5D_2}$ transitions of $Eu^{3+}$ are observed in the wavelength region 350-500 nm. The strong line emission is observed at 618 nm corresponding to the due to the $^5D_0{\rightarrow}^7F_2$ transition. The lifetime of 618 nm emission decreases with increasing temperature as 7 K ($114{\mu}s$), 100 K ($94{\mu}s$), 200 K ($10{\mu}s$) and 300 K ($0.5{\mu}s$).

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.222.1-222.1
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• 2015

Recently, graphene quantum dots (GQDs) have attracted great attention due to various properties including cost-effectiveness of synthesis, low toxicity, and high photostability. Nevertheless, the origins of photoluminescence (PL) from GQDs are unclear because of extrinsic states of the impurities, disorder structures, and oxygen-functional groups. Therefore, to utilize GQDs in various applications, their optical properties generated from the extrinsic states should be understood. In this work, we have focused on the effect of oxygen-functional groups in PL of the GQDs. The GQDs with nanoscale and single layer are synthesized by employing graphite nanoparticles (GNPs) with 4 nm. The series of GQDs with different amount of oxygen-functional groups were prepared by the chain of chemical oxidation and reduction process. The fabrication of a series of graphene oxide QDs (GOQDs) with different amounts of oxygen-contents is first reported by a direct oxidation route of GNPs. In addition, for preparing a series of reduced GOQDs (rGOQDs), we employed the conventional chemical reduction to GOQDs solution and controlled the amount of reduction agents. The GOQDs and rGOQDs showed irreversible PL properties even though both routes have similar amount of oxyen-functional groups. In the case of a series of GOQDs, the PL spectrum was clearly redshifted into blue and green-yellowish color. On the other hand, the PL spectrum of rGOQDs did not change significantly. By various optical measurement such as the PL excitation, UV-vis absorbance, and time-resolved PL, we could verify that their PL mechanisms of GOQDs and rGOQDs are closely associated with different atomic structures formed by chemical oxidation and reduction. Our study provides an important insights for understanding the optical properties of GQDs affected by oxygen-functional groups. [1]

• Macromolecular Research
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• v.17 no.9
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• pp.672-681
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• 2009

A series of inert and photo-stable Er(III)-encapsulated complexes based on ${\pi}$-extended dendritic anthracene ligands bearing G3-aryl-ether dendron ([G3-AnX]-$CO_2H$), which retain different ${\pi}$-bridging systems, such as single (X= S), double (X= D) and triple (X= T) bonds was designed and synthesized to establish the structure-property relationship. The near infrared emission intensities of Er(III)-encapsulated complexes were enhanced dramatically by increasing the ${\pi}$-conjugated extension of anthracene ligands. The time-resolved luminescence spectra show monoexponential decays with a lifetime of $2.0{\sim}2.4ms$ for $Er^{3+}$ ions in thin films, and calculated intrinsic quantum yields of $Er^{3+}$ ions are in the range of $0.025{\sim}0.03%$. As a result, all Er(III)-encapsulated dendrimer complexes exhibit the near IR emission with the following order: $Er^{3+}-[G3-AnD]_3$(terpy) > $Er^{3+}-[G3-AnS]_3$(terpy) ${\approx}$ $Er^{3+}-[G3-AnT]_3$(terpy), because $Er^{3+}-[G3-AnD]_3$(terpy) has a higher relatively spectral overlap J value and energy transfer efficiency. In addition, the lack of detectable phosphorescence and no significant spectral dependence of the ${\pi}$-extended anthracene moieties on the solvent polarity support energy transfer from their singlet state to the central $Er^{3+}$ ion taking place in $Er^{3+}-[G3-AnX]_3$(terpy).

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.211-216
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• 2010

The luminescence properties of $In_{0.5}Ga_{0.5}As/In_{0.5}Al_{0.5}As$ multiple quantum wells (MQWs) grown on $In_{0.5}Al_{0.5}As$ buffer layers have been studied by using photoluminescence (PL) and time-resolved PL measurements. A$1-{\mu}m$ thick $In_{0.5}Al_{0.5}As$ buffer layers were deposited on a 500 nm thick GaAs layer, followed by the deposition of the InGaAs/InAlAs MQWs. In order to investigate the effects of InAlAs buffer layer on the optical properties of the MQWs, four different temperature sequences are used for the growth of InAlAs buffer layer. The growth temperature for InAlAs buffer layer was varied from 320^{\circ}C to $580^{\circ}C$. The MQWs consist of three $In_{0.5}Ga_{0.5}$As wells with different well thicknesses (2.5 nm, 4.0 nm, and 6.0 nm thick) and 10 nm thick $In_{0.5}Al_{0.5}$As barriers. The PL spectra from the MQWs with InAlAs layer grown at lower temperature range ($320-580^{\circ}C$) showed strong peaks from 4 nm QW and 6 nm QW. However, for the MQWs with InAlAs buffer grown at higher temperature range ($320-480^{\circ}C$), the PL spectra only showed a strong peak from 6 nm QW. The strongest PL intensity was obtained from the MQWs with InAlAs layer grown at the fixed temperature of $480^{\circ}C$, while the MQWs with buffer layer grown at higher temperature from $530^{\circ}C$ to $580^{\circ}C$ showed the weakest PL intensity. From the emission wavelength dependence of PL decay times, the fast and slow decay times may be related to the recombination of carriers in the 4 nm QW and 6 nm QW, respectively. These results indicated that the growth temperatures of InAlAs layer affect the structural and optical properties of the MQWs.