• New & Renewable Energy
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• v.8 no.3
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• pp.38-46
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• 2012

Enhanced Geothermal System (EGS) among geothermal system types enables to produce sustainable energy even in non-volcanic region while conventional geothermal energy has been restricted to obtain only from hot and permeable formation such as in volcanic regions. Successful EGS project in terms of economy, however, can be expected only when the project is managed effectively considering most of influencing factors (e.g., tangible and intangible resources, cost, time, risks, etc.). In particular, well construction is of the utmost importance in geothermal project as it dominantly influences on time and cost in the whole project. Therefore, when it comes to viable geothermal project without abundant experience, managing drilling economically and efficiently is inevitable. In this study, a project management system for well construction in geothermal project based on project control system including work breakdown structure and cost account was developed to predict and assess the performance of drilling and to visualize the progress.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.10
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• pp.713-719
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• 2013

Power MOSFET operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. We have optimal designed planar and trench gate power MOSFET for high breakdown voltage and low on resistance. When we have designed $6,580{\mu}m{\times}5,680{\mu}m$ of chip size and 20 A current, on resistance of trench gate power MOSFET was low than planar gate power MOSFET. The on state voltage of trench gate power MOSFET was improved from 4.35 V to 3.7 V. At the same time, we have designed unified field limit ring for trench gate power MOFET. It is Junction Termination Edge type. As a result, we have obtained chip shrink effect and low on resistance because conventional field limit ring was convert to unify.

• Proceedings of the KIEE Conference
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• 1989.11a
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• pp.114-118
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• 1989

Due to the increased integration density of VLSI circuits a highly reliable thin oxide film is required to fabricate a small geometry MOS device. The behavior of thermal $SiO_2$ under high electric field and current condition has a major effect on MOS device degration and also the practical use of MOS device under irradiation has cause the degration of thin oxide films. In this paper, in order to evaluate the reliability of thin oxides with no stress applied and stressed by the irradiation under low electric field, the tests of TDDB (Time-dependent-dielectric breakdown) are used. Failure times against electric field are examined and acceleration factor is obtained for each case. Based on the experimental data, breakdown wear out limitation for thin oxide films is characterised.

• Journal of the Korean Ceramic Society
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• v.56 no.1
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• pp.84-90
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• 2019

The varistor properties and stability against dc-accelerated stress of $V_2O_5-Mn_3O_4-Co_3O_4-Dy_2O_3-Nb_2O_5-Bi_2O_3$ (VMCDNB)-doped zinc oxide ceramics sintered at $850-925^{\circ}C$ were investigated. Increasing the sintering temperature increased the average grain size from 4.6 to 8.7 mm and decreased the density of the sintered pellet density from 5.54 to $5.42g/cm^3$. The breakdown field decreased from 5919 to 1465 V/cm because of the increase in the average grain size. Zinc oxide ceramics sintered at $875^{\circ}C$ showed the highest nonlinear coefficient (43.6) and the highest potential barrier height (0.96 eV). Zinc oxide ceramics sintered at $850^{\circ}C$ showed the highest stability: the variation rate of the breakdown field was -2.0% and the variation rate of the nonlinear coefficient was -23.3%, after application of the specified stress (applied voltage/temperature/time).

• Journal of Advanced Marine Engineering and Technology
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• v.28 no.3
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• pp.493-499
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• 2004

The dominant effect of the interaction between vortices, generated by the addition of the Leading Edge Extension(LEX) in front of the wing, was well observed in this experiment. In this study, systematic approach by PIV experimental method within a circulating water channel was adopted to study the fundamental characteristics of induced vertex generation, development and its breakdown appearing on a delta wing model with or without LEX in terms of four angles of attack($15^{\circ}$, $20^{\circ}$, $25^{\circ}$, $30^{\circ}$) and six measuring sections(30%, 40%, 50%, 60%, 70%, 80%) of chord length. Distributions of time-averaged velocity vectors and vortices over the delta wing model were compared along the chord length direction. High-speed CCD camera which made it possible to acquire serial images is able to get the detailed information about the flow characteristics occurred on the delta wing. Especially quantitative comparison of the maximum vorticity featuring the induced pressure distribution were also conducted to clarity the significance of the LEX existence.

• Transactions on Electrical and Electronic Materials
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• v.14 no.1
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• pp.47-51
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• 2013

A high power MOSFET switch based on a 0.35 ${\mu}m$ CMOS process has been developed for the protection IC of a rechargeable battery. In this process, a vertical double diffused MOS (VDMOS) using 3 ${\mu}m$-thick epi-taxy layer is integrated with a Zener diode. The p-n+Zener diode is fabricated on top of the VDMOS and used to protect the VDMOS from high voltage switching and electrostatic discharge voltage. A fully integrated digital circuit with power devices has also been developed for a rechargeable battery. The experiment indicates that both breakdown voltage and leakage current depend on the doping concentration of the Zener diode. The dependency of the breakdown voltage on doping concentration is in a trade-off relationship with that of the leakage current. The breakdown voltage is obtained to exceed 14 V and the leakage current is controlled under 0.5 ${\mu}A$. The proposed integrated module with the application of the power MOSFET indicates the high performance of the protection IC, where the overcharge delay time and detection voltage are controlled within 1.1 s and 4.2 V, respectively.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.40 no.4
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• pp.346-353
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• 2012

The Laser-Induced Breakdown Spectroscopy (LIBS) has great advantages as an analytical technique, namely real-time analysis without sample preparation, ideal for mobile chemical sensor for space exploration. The LIBS plasma characteristics are strongly dependent on the surrounding pressure. In this study, seven types of target (C, Ti, Ni, Cu, Sn, Al, Zn) were investigated for their elemental lifetime. The target was located in vacuum chamber which has the pressure range of 760 to $10^{-5}$ torr. As the pressure is decreased, the elemental lifetimes of carbon and titanium declined, while all other targets showed increased lifetimes until reaching 1 torr and declined with continued pressure decrease. The boiling point and electronegativity amongst the physicochemical properties of the samples are used to explain this peculiarity.

• Transactions on Electrical and Electronic Materials
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• v.14 no.4
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• pp.221-224
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• 2013

Effects of ambient temperature on the ac electrical treeing and breakdown behaviors in an epoxy/layered silicate (1 wt%) were carried out in needle-plate electrode geometry. A layered silicate was exfoliated in an epoxy base resin,, using our ac electric field apparatus. To measure the treeing initiation and propagation, and the breakdown rate, constant alternating current (ac) of 10 kV (60 Hz) was applied to the specimen in a needle-plate electrode arrangement, at $30^{\circ}C$, $90^{\circ}C$ or $130^{\circ}C$ of insulating oil bath. At $30^{\circ}C$, the treeing initiation time and the breakdown time in the epoxy/layered silicate (1 wt%) system were 1.4 times higher than those of the neat epoxy resin. At $90^{\circ}C$ (lower than Tg), electrical treeing was initiated in 55 min, and propagated until 1,390 min at the speed of $0.35{\times}10^{-3}mm/min$, which was 4.4 times higher than that at $30^{\circ}C$; however, there was almost no further treeing propagation after 1,390 min. At $130^{\circ}C$ (higher than Tg), electrical treeing was initiated in 44 min, and propagated until 2,000 min at the speed of $0.96{\times}10^{-3}mm/min$. Typical branch type electrical treeing was obtained from the neat epoxy and epoxy/layered silicate at $30^{\circ}C$, while bush type treeing was observed out from the needle tip at $90^{\circ}C$ and $130^{\circ}C$.

• Korean Journal of Materials Research
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• v.29 no.3
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• pp.175-182
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• 2019

This study examines paraelectric $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ (BZN), which has no hysteresis and high dielectric strength, for energy density capacitor applications. To increase the breakdown dielectric strength of the BZN film further, poly(vinylidene fluoride) BZN-PVDF composite film is fabricated by aerosol deposition. The volume ratio of each composition is calculated using dielectric constant of each composition, and we find that it was 12:88 vol% (BZN:PVDF). To modulate the structure and dielectric properties of the ferroelectric polymer PVDF, the composite film is heat-treated at $200^{\circ}C$ for 5 and 30 minutes following quenching. The amount of ${\alpha}-phase$ in the PVDF increases with an increasing annealing time, which in turn decreases the dielectric constant and dielectric loss. The breakdown dielectric strength of the BZN film increases by mixing PVDF. However, the breakdown field decreases with an increasing annealing time. The BZN-PVDF composite film has the energy density of $4.9J/cm^3$, which is larger than that of the pure BZN film of $3.6J/cm^3$.

• Korean Journal of Food Science and Technology
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• v.35 no.1
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• pp.155-158
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• 2003

Time-dependent flow properties of mustard pastes were measured at various total solid contents $(TS,\;18{\sim}30%)$ and shear rates $(15{\sim}25\;s^{-1})$ using a Haake concentric cylinderical viscometer. Experimental data of the stress decay with time of shearing were fitted to three mathematical models proposed by Weltman, Figoni and Shoemaker, and Hahn. Time-dependent flow behaviour of mustard paste increased with increase in TS, but was found to vary in the range of shear rate investigated. Time-dependent model of Weltman was found to be most applicable $(average\;R^2=0.96)$ for mustard paste. Shear stresses for structure breakdown increased with increase in TS, while the structure breakdown rate decreased.