Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Design of Unified Trench Gate Power MOSFET for Low on Resistance and Chip Efficiency

낮은 온저항과 칩 효율화를 위한 Unified Trench Gate Power MOSFET의 설계에 관한 연구

  • Kang, Ey-Goo (Department of Photovoltaic Engineering, Far East University)
  • Received : 2013.08.23
  • Accepted : 2013.09.23
  • Published : 2013.10.01
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Abstract

Power MOSFET operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. We have optimal designed planar and trench gate power MOSFET for high breakdown voltage and low on resistance. When we have designed $6,580{\mu}m{\times}5,680{\mu}m$ of chip size and 20 A current, on resistance of trench gate power MOSFET was low than planar gate power MOSFET. The on state voltage of trench gate power MOSFET was improved from 4.35 V to 3.7 V. At the same time, we have designed unified field limit ring for trench gate power MOFET. It is Junction Termination Edge type. As a result, we have obtained chip shrink effect and low on resistance because conventional field limit ring was convert to unify.

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References

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