• Economic and Environmental Geology
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• v.31 no.4
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• pp.297-310
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• 1998

Geochemical characteristics of environmental toxic elements at the Narim mine area were investigated on the basis of major, minor, rare earth element geochemistry and mineralogy. Ratios of $Al_2O_3/Na_2O$ and $K_2O/Na_2O$ in soils and sediments range from 11.57 to 22.21 and from 1.86 to 3.93, and are partly negative and positive correlation against $SiO_2/Al_2O_3$ (3.41 to 4.78), respectively. These suggested that sediment source of host granitic gneiss could be due to rocks of high grade metamorphism originated by sedimentary rocks. Characteristics of some trace and rare earth elements of V/Ni (0.33 to 1.95), Ni/Co (2.00 to 6.50), Zr/Hf (11.27 to 53.10), La/Ce (0.44 to 0.55), Th/Yb (4.07 to 7.14), La/Th (2.35 to 3.93), $La_N/Yb_N$ (6.58 to 13.67), Co/Th (0.63 to 2.68), La/Sc (3.29 to 5.94) and Sc/Th (0.49 to 1.00) are revealed a narrow range and homogeneous compositions may be explained by simple source lithology. Major elements in all samples are enriched $Al_2O_3$, MgO, $TiO_2$ and LOI, especially $Fe_2O_3$ (mean=7.36 wt.%) in sediments than the composition of host granitic gneiss. The average enrichment indices of major and rare earth elements from the mining drainage are 2.05 and 2.91 of the sediments and are 2.02 and 2.60 of the soils, normalizing by composition of host granitic gneiss, respectively. Average composition (ppm) of minor and/or environmental toxic elements in sediments and soils are Ag=14 and 1, As=199 and 14, Cd=22 and 1, Cu=215 and 42, Pb=1770 and 65, Sb=18 and 3, Zn=3333 and 170, respectively, and extremely high concentrations are found in the subsurface sediments near the ore dump. Environmental toxic elements were strongly enriched in all samples, especially As, Cd, Cu, Pb, Sb and Zn. The level of enrichment was very severe in mining drainage sediments, while it was not so great in the soils. Based on the EPA value, enrichment index of toxic elements is 8.63 of mining drainage sediments and 0.54 of soils on the mining drainage. Mineral composition of soils and sediments near the mining area were partly variable being composed of quartz, mica, feldspar, amphibole, chlorite and clay minerals. From the gravity separated mineralogy, soils and sediments are composed of some pyrite, arsenopyrite, chalcopyrite, sphalerite, galena, goethite and various hydroxide minerals.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• Transactions of the Korean hydrogen and new energy society
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• v.16 no.3
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• pp.244-252
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• 2005

It is very interesting and important in the academic point of view and in practical use the hydrogen-induced phase separation(HIPS) which appears during hydrogen heat treatment. Since hydrogen can be removed very fast by pumping it out the hydrogen-induced new lattice phase which can not be obtained without hydrogen can be preserved as meta-stable state. In this study it has been investigated whether the HIPS appear in Pd-Al, Pd-Co, Pd-Cr, Pd-Ti, Pd-V and Pd-Zr alloys and discussed thermodynamic representation of the HIPS. The Pd alloys were arc-melted under argon atmosphere and remelted 4 or 5 times for homogenization. The alloys were annealed at 600$^{\circ}C$ under vacuum for 24 hrs and then subjected to pressure-composition isotherm measurements at 100$^{\circ}C$. The hydrogen heat treatment(HHT) of samples was carried out at 600$^{\circ}C$ under hydrogen pressure of 70 bar for 6 days and PC isotherms at 100$^{\circ}C$ were measured. By comparing the PC isotherms measured before and after HHT, occurrence of phase separation was determined. The experimental results showed that the HIPS appeared only in Pd-0.05Co alloy. For Pd-Co alloys with various composition the PC isotherms were measured. By adopting Park-Flanagan model for ternary thermodynamics the Gibbs free energy change for Pd-Co-H solid solution was calculated and subsequently with this the HIPS in Pd-Co alloy was explained fairly.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2002.07a
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• pp.25-37
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• 2002

The most important industrial application of gamma radiation in characterizing green compacts is the determination of the density. Examples are given where this method is applied in manufacturing technical components in powder metallurgy. The requirements imposed by modern quality management systems and operation by the workforce in industrial production are described. The accuracy of measurement achieved with this method is demonstrated and a comparison is given with other test methods to measure the density. The advantages and limitations of gamma ray densitometry are outlined. The gamma ray densitometer measures the attenuation of gamma radiation penetrating the test parts (Fig. 1). As the capability of compacts to absorb this type of radiation depends on their density, the attenuation of gamma radiation can serve as a measure of the density. The volume of the part being tested is defined by the size of the aperture screeniing out the radiation. It is a channel with the cross section of the aperture whose length is the height of the test part. The intensity of the radiation identified by the detector is the quantity used to determine the material density. Gamma ray densitometry can equally be performed on green compacts as well as on sintered components. Neither special preparation of test parts nor skilled personnel is required to perform the measurement; neither liquids nor other harmful substances are involved. When parts are exhibiting local density variations, which is normally the case in powder compaction, sectional densities can be determined in different parts of the sample without cutting it into pieces. The test is non-destructive, i.e. the parts can still be used after the measurement and do not have to be scrapped. The measurement is controlled by a special PC based software. All results are available for further processing by in-house quality documentation and supervision of measurements. Tool setting for multi-level components can be much improved by using this test method. When a densitometer is installed on the press shop floor, it can be operated by the tool setter himself. Then he can return to the press and immediately implement the corrections. Transfer of sample parts to the lab for density testing can be eliminated and results for the correction of tool settings are more readily available. This helps to reduce the time required for tool setting and clearly improves the productivity of powder presses. The range of materials where this method can be successfully applied covers almost the entire periodic system of the elements. It reaches from the light elements such as graphite via light metals (AI, Mg, Li, Ti) and their alloys, ceramics ($AI_20_3$, SiC, Si_3N_4, $Zr0_2$, ...), magnetic materials (hard and soft ferrites, AlNiCo, Nd-Fe-B, ...), metals including iron and alloy steels, Cu, Ni and Co based alloys to refractory and heavy metals (W, Mo, ...) as well as hardmetals. The gamma radiation required for the measurement is generated by radioactive sources which are produced by nuclear technology. These nuclear materials are safely encapsulated in stainless steel capsules so that no radioactive material can escape from the protective shielding container. The gamma ray densitometer is subject to the strict regulations for the use of radioactive materials. The radiation shield is so effective that there is no elevation of the natural radiation level outside the instrument. Personal dosimetry by the operating personnel is not required. Even in case of malfunction, loss of power and incorrect operation, the escape of gamma radiation from the instrument is positively prevented.