• Korean Journal of Materials Research
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• v.17 no.3
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• pp.125-131
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• 2007

[ $TiO_{2}-solution$ ] was aaded in $SiO_{2}-solution$ by various composition. $SiO_{2}-TiO_{2}$ thin films were obtained by the dip-coating method on the $SiO_{2}$ glass substrates, and then heat-treated at various temperature. Nano-size $TiO_{2}$ particles dispersed $SiO_{2}-TiO_{2}$ films showed absorption peak by quantum size effect at short wavelength region $350{\sim}400nm$, which made them good candidates for non-linear optical materials and photo-catalytic materials. The thickness of $SiO_{2}-TiO_{2}$ films were $300{\sim}430nm$. The contact angle of $SiO_{2}-TiO_{2}$ films for water was $5.3{\sim}47.9^{\circ}$, and therefore it is clear that $SiO_{2}-TiO_{2}$ films have super hydrophilic properties and the self-cleaning effects.

• The Korean Journal of Ceramics
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• v.5 no.1
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• pp.44-49
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• 1999

In order to improve the oxidation resistance of $Ti_3Al$, Ti-25at.%Al composites containing dispersed particles of 15wt.%SiC were prepared by a tubular mixing-spark plasma sintering method. The sintered composites had $Ti_3Al$, SiC, $Ti_5Si_3$ and TiC. The presence of $Ti_5Si_3$ and TiC indicates that some of SiC particles reacted with Ti to from more stable phases. From oxidation tests at 800, 900 and $1000^{\circ}C$ under 1 atm of pure oxygen, it was found that the oxidation rate of Ti3Al was effectively reduced by the addition of SiC. The scale was primarily composed of an outer $TiO_2$ layer having some $Al_2O_3 $islands, an intermediate relatively thick $Al_2O_3 $ layer, and an inner $TiO_2+Al_2O_3+SiO_2$ mixed layer. Beneath the scale, Kirkendall voids were seen.

• Korean Journal of Materials Research
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• v.6 no.12
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• pp.1192-1198
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• 1996

배선 재료나 salicide 트랜지스터에 적용될 것으로 기대되는 Cu 배선과 Co 단일층 및 Co/Ti 이중층을 사용하여 형성된 코발트 실리사이드간의 열적 안정성에 대하여 조사하였다. 40$0^{\circ}C$열처리후 Cu3Si 막이 CoSi2층과 Si 기판 사이에 형성되었는데, 이것은 Cu 원자의 확산에 기인한 것이다. $600^{\circ}C$에서의 열처리 후에 형성된 최종막의 구조는 각각 Cu/CoSi2/Cu3Si/Si과 TiO2/Co-Ti-Si 합금/CoSi2/Cu3Si/Si였으며, 상부에 형성된 TiO2층은 산소 오염에 의한 것으로 밝혀졌다.

• Korean Journal of Materials Research
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• v.3 no.1
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• pp.12-18
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• 1993

Abstract The effect of the film stress on the thermal stability of TiSi, films under the dielectric overcoat was investigated. TiS$i_2$ films with the sheet resistance of 1.2 ohm/sq. were produced by a solid-state reaction between sputtered Ti film and single-crystalline Si in an RTA (rapid thermal anneal) machine. Dielectric overcoats such as the USG (Undoped Silicate Glass, Si$O_2$) film and the PE-SiN(S$i_3$$N_4$) film were deposited by AP-CVD and PE-CVD, respectively, on the TiS$i_2$ film. The thermal stability of the TiSi, film was evaluated by changes in the sheet resistance, film stress and microstructure after furnace anneals at 90$0^{\circ}C$. Agglomeration of the TiSi2 film high temperatures results in the increase of sheet resistance and the decrease of tensile stress of TiSi, film. The stress level of the TiSi" PE-SiN and ~SG films at 90$0^{\circ}C$C was 1.3${\times}{10^{9}}$, 1.25 ${\times}{10^{10}}$, 2.26 ${\times}{10^{10}}$ dyne/c$m^2$ in tensile, respectively. Dielectric films deposited by CVD on TiSi, was effective on preventing agglomeration of TiSi,. The PE-SiN film mproved the thermal stability of TiSi, more effectively than the AP-CVD USG film. It is considered that agglomeration of the TiS$i_2$ film under the stress of dielectric overcoat at high temperature can be caused by a diffusional flow of atom called Nabarro-Herring microcreep.reep.

• Journal of Surface Science and Engineering
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• v.36 no.2
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• pp.109-115
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• 2003

Quaternary Ti-Al-Si-N films were deposited on WC-Co substrates by a hybrid deposition system of arc ion plating (AIP) method for Ti-Al source and DC magnetron sputtering technique for Si incorporation. The synthesized Ti-Al-Si-N films were revealed to be composites of solid-solution (Ti, Al, Si)N crystallites and amorphous Si3N4 by instrumental analyses. The Si addition in Ti-Al-N films affected the refinement and uniform distribution of crystallites by percolation phenomenon of amorphous silicon nitride, similarly to Si effect in TiN film. As the Si content increased up to about 9 at.%, the hardness of Ti-Al-N film steeply increased from 30 GPa to about 50 GPa. The highest microhardness value (~50 GPa) was obtained from the Ti-Al-Si-N film haying the Si content of 9 at.%, the microstructure of which was characterized by a nanocomposite of nc-(Ti,Al,Si) N/a$-Si_3$$N_4$.

• Korean Journal of Materials Research
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• v.2 no.6
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• pp.408-416
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• 1992

Stable TiS$i_2$was formed by RTA on single-Si and on poly-Si. Subsequently, an Al-1% Si layer with 600-nm thick was deposited on top of the TiS$i_2$, Finally, the specimens were annealed for 30min at 400-60$0^{\circ}C$in $N_2$ambient. The thermal stability of Al-1% Si/TiS$i_2$bilayer and interfacial reaction were investigated by measuring sheet resistance, Auger electron spectroscopy (AES), and scanning electron microscopy (SEM). The composition and phase of precipitates formed by the reaction of Al-1% Si with Ti-silicide were studied by energy dispersive spectroscopy (EDS), X-ray diffraction (XRD). In the case of single-Si substrate the reaction of Al-1% Si layer with TiS$i_2$layer resulted in precipitates, consuming all TiS$i_2$layer at 55$0^{\circ}C$. On the other hand, the disappearance of TiS$i_2$on poly-Si occurred at 50$0^{\circ}C$ and more precipitates were formed by the reaction of Al-1% Si/TiS$i_2$on potty-Si substrate than those of the reaction on single-Si substrate. This phenomenon resulted from the fact that Ti-silicide formed on poly-Si was more unstable than on single-Si by the effect of grain boundary. By EDS analysis the precipitates were found tobe composed of Ti, Al, and Si. X-ray diffraction showed the phase of precipitates to be theT$i_7$A$l_5$S$i_12$ternary compound.

• Journal of Environmental Science International
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• v.11 no.6
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• pp.597-603
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• 2002

Photocatalytic degradation of phenol was carried out with UV-illuminated TiO$_2$-SiO$_2$ in aqueous suspension. TiO$_2$-SiO$_2$ catalysts were prepared by sol-gel method from the titanium isopropoxide and tetraethylorthosilicate at different Ti/Si ratio and some commercial TiO$_2$ catalysts were used as purchased. All catalysts were characterized by X-ray Diffraction(XRD) and BET surface area analyzer. The effect of reaction conditions, such as initial concentration of phenol, reaction temperature and catalyst weight on the photocatalytic activity was studied. In addition, TiO$_2$-SiO$_2$(49: 1) prepared by sol-gel method showed higher activity than commercial TiO$_2$catalysts on the photocatalytic degradation of phenol. The addition of SiO$_2$ into TiO$_2$hepled to increase the thermal stability of titania which suppressed the formation of anatase into rutile. The photocatalytic degradation of phenol showed pseudo-1st order reaction and the degradation rate increases with decreasing initial phenol concentration.

• Journal of Powder Materials
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• v.12 no.4 s.51
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• pp.273-278
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• 2005

Nanostructured TiN/$TiB_2$/$TiSi_2$ and TiN/$TiB_2$/$Ti_5Si_2$ composite powders have been prepared by mechanochemical reaction from mixtures of Ti, BN, and $Si_3N_4$ powders. The raw materials have reacted to form a uniform mixture of TiN, $TiB_2$ and $TiSi_2$ or $Ti_5Si_3$ depending on the amount of $Si_3N_4$ used in the starting mixtures, and the reaction proceeded through so-called mechanically activated self-sustaining reaction (MSR). Fine TiN and $TiB_2$ crystallites less than a few tens of nanometer were homogeneously dispersed in the amorphous $TiSi_2$ or $Ti_5Si_3$ matrix after milling for 12 hours. These amorphous matrices became crystalline phases after annealing at high temperatures as expected, but the original microstructure did not change significantly.

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.484-492
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• 1998

The formation mechanism of the epitaxial cobalt silicide from Co/Ti/OOO) Si structure has been investigated. The transition temperature of CoSi to CoSi, was found to increase with increasing the Ti interlayer thickness, which may be owing to the occupation of the tetrahedral sites by Ti atoms in the CoSi crystal structure as well as the blocking effect of the Ti interlayer on the diffusion of Co. Also, the Co- Ti-O ternary compound formed at the metal! Si interface at the begining of silicidation, which seems to play an important role in epitaxial growth of Co silicide. The final layer structures obtained after a rapid thermal annealing of the Cot Ti/( 100) Si bi-layer structure turned out to be Ti oxide/Co- Ti-Si/epi-$CoSi_2$/OOO)

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.12
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• pp.24-30
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• 1991

As a study to use Ti-silicides as interconnection material, the formation of Ti-silicides and the behavior of dopants were investigated for specimens where dopants are introduced on both single-Si substrate and poly-Si that was deposited on the single-Si. Result showed that stable C54 TiSiS12T formed above $700^{\circ}C$ and the formed TiSiS12T had bad surface roughness. And arsenics were chiefly redistributed in TiSiS12T while boron was accumulated near the interface between TiSiS11T and Si during RTA treatment.