• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.288-288
• /
• 2012

In this study, we investigated that the resistance switching characteristics of W-doped NbOx films with increasing W doping concentration. The W-doped NbOx based ReRAM devices with a TiN/W-doped NbOx/Pt/Ti/SiO2 were fabricated on Si substrates. The 50 nm thick W-doped NbOx films were deposited by reactive dc magnetron co-sputtering at $400^{\circ}C$ and oxygen partial pressure of 35%. Micro-structure of W-doped NbOx films and atomic concentration were investigated by XRD, TEM and XPS, respectively. The W-doped NbOx films showed set/reset resistance switching behavior at various W doping concentrations. The process voltage of set/reset is decreased and whereas the initial current level is increased with increasing W doping concentration in NbOx films. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of metallic tungsten of oxygen of W-doped NbOx.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.1091-1094
• /
• 2004

High-luminous efficiency full-color emissions in photoluminescence (PL) were obtained in $GdVO_4$ phosphor thin films co-doped with various amounts of Eu, Er and/or Tm and postannealed at approximately 1000$^{\circ}C$. The $GdVO_4$:Eu,Er,Tm phosphor thin films were deposited on thick $BaTiO_3$ ceramic sheets by r.f. magnetron sputtering using powder targets and postannealed in an air atmosphere. The rare earth (RE) content (RE/(Gd+V+RE) atomic ratio) in the oxide phosphor thin films was varied in the range from 0.1 to 2 at.%. It was found that the excitation of $GdVO_4$:Eu.Er,Tm thin films is attributed to band-to-band transition. A white PL emission was obtained in a $GdVO_4$:Eu,Er,Tm thin film with Eu, Er and Tm contents of 0.2, 0.7 and 1 at.%, respectively: CIE chromaticity color coordinates. (X=0.352 and Y=0.351). In addition, a white emission was obtained in a thin-film electroluminescent (TFEL) device made with this thin film.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.79-79
• /
• 2013

Quantum-structures with nanoparticles have been attractive for various electronic and photonic devices [1,2]. In recent, nonvolatile memories such as nano-floating gate memory (NFGM) and resistance random access memory (ReRAM) have been studied using silicides, metals, and metal oxides nanoparticles [3,4]. In this study, we fabricated nonvolatile memories with silicides (WSi2, Ti2Si, V2Si) and metal-oxide (Cu2O, Fe2O3, ZnO, SnO2, In2O3 and etc.) nanoparticles embedded in polyimide matrix, and photovoltaic device also with SiC nanoparticles. The capacitance-voltageand current-voltage data showed a threshold voltage shift as a function of write/erase voltage, which implies the carrier charging and discharging into the metal-oxide nanoparticles. We have investigated also the electrical properties of ReRAM consisted with the nanoparticles embedded in ZnO, SiO2, polyimide layer on the monolayered graphene. We will discuss what the current bistability of the nanoparticle ReRAM with monolayered graphene, which occurred as a result of fully functional operation of the nonvolatile memory device. A photovoltaic device structure with nanoparticles was fabricated and its optical properties were also studied by photoluminescence and UV-Vis absorption measurements. We will discuss a feasibility of nanoparticles to application of nonvolatile memories and photovoltaic devices.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.373-373
• /
• 2014

Resistive-change random access memory (ReRAM) device is one of the promising candidates owing to its simple structure, high scalability potential and low power operation. Many resistive switching devices using transition metal oxides materials such as NiO, Al2O3, ZnO, HfO2, $TiO_2$, have attracting increased attention in recent years as the next-generation nonvolatile memory. Among various transition metal oxides materials, HfO2 has been adopted as the gate dielectric in advanced Si devices. For this reason, it is advantageous to develop an HfO2-based ReRAM devices to leverage its compatibility with Si. However, the annealing temperature of these high-k thin films for a suitable resistive memory switching is high, so there are several reports for low temperature process including microwave irradiation. In this paper, we demonstrate the bipolar resistive switching characteristics in the microwave irradiation annealing processed Ag/HfO2/Pt ReRAM device. Compared to the as-deposited Ag/HfO2/Pt device, highly improved uniformity of resistance values and operating voltage were obtained from the micro wave annealing processed HfO2 ReRAM device. In addition, a stable DC endurance (>100 cycles) and a high data retention (>104 sec) were achieved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.11
• /
• pp.904-911
• /
• 2001

High-density lead zirconate titanate(Pb(Zr$\_$0.53/Ti$\_$0.47/)O$_3$, PZT) ceramics were fabricated by a new milling-precipitation(MP) process improved from the conventional solid state process. This process was progressed by a milling impregnation through mixing ZrO$_2$ and TiO$_2$ powders with lead nitrate(Pb(NO$_3$)$_2$) water solution in zirconia ball media, and then milling precipitation was induced from precipitation of PbC$_2$O$_4$ by adding ammonium of oxalate monohydrate((NH$_4$)$_2$C$_2$O$_4$$.$H$_2$O) as a precipitant. As a result of this process, single-phase perovskite structure was formed at the calcination temperature of 750$\^{C}$ for Pb(Zr$\_$0.53/Ti$\_$0.47/)O$_3$ powders. In addition, the highest density at the sintering temperature of 1100$\^{C}$ was obtained, because of the highly sinterable PZT Powders ground through the re-milling process. Piezoelectric and dielectric properties of sintered sample were improved by MP process.

• Journal of the Korean Vacuum Society
• /
• v.10 no.4
• /
• pp.416-423
• /
• 2001

Microstructural, optical and dielectric properties of $SrTiO_3$ thin films were investigated. These films were deposited on the ITO glasses by rf-magnetron sputtering at room temperature and subequently heat treated in $O_2$ atmosphere at various temperatures. It has been found from X-ray diffraction patterns that as-deposited films prepared at room temperature are amorphous, while the films heat treated at temperature range of 400~$600^{\circ}C$ reveal the structure of pyrochlore. On the other hand, the structure of perovskite is dominantly observed in the films heat treated at temperatures over $650^{\circ}C$ in which the drastic changes of optical band gap and dielectric constant are observed. In addition, the phase transition peak is observed at $272^{\circ}C$ in the films heat treated at $600^{\circ}C$, while the dielectric dispersion is observed at near $310^{\circ}C$ in the films heat treated at $650^{\circ}C$.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2017.05a
• /
• pp.154-154
• /
• 2017

Ti-6Al-4V alloys are widely used as metal-lic biomaterials in dentistry and orthopedics due to its excellent biocompatibility and me-chanical properties. However, because of low biological activity, it is difficult to form bone growth directly on the surface of titanium implants. For this reason, surface treatment of plasma electrolytic oxidation(PEO) was used for dental implants. To enhance bioac-tivity on the surface, strontium(Sr) and sili-con(Si) ions can be added to PEO treated sur-face in the electrolyte containing these ions. The presence of Sr in the coating enhances osteoblast activity and differentiation, where-as it inhibits osteoclast production and prolif-eration. And Si has been found to be essen-tial for normal bone, cartilage growth, and development. In this study, electrochemical characteristics of Ca, P, Sr, and Si ions from PEO-treated Ti-6Al-4V alloy surface was re-searched using various experimental instruments. DC power is used and Ti-6Al-4V al-loy was subjected to a voltage of 280 V for 3 minutes in the electrolyte containing 5, 10, 20M% Sr ion and 5M% Si ion. The morphol-ogies of PEO-treated Ti-6Al-4V alloy by electrochemical anodization were examined by field-emission scanning electron micro-scopes (FE-SEM), energy dispersive x-ray spectroscopy (EDS), x-ray diffraction (XRD) and corrosion analysis using AC impedance and potentiodynamic polarization test in 0.9% NaCl solution at similar body tempera-ture using a potentiostat with a scan rate of 1.67mV/s and potential range from -1500mV to + 2000mV.

• Journal of the Microelectronics and Packaging Society
• /
• v.27 no.1
• /
• pp.25-29
• /
• 2020

This study demonstrates direct-patternable amorphous TiO_x resistive switching (RS) device and the fabrication method using photochemical metal-organic deposition (PMOD). For making photosensitive stock solutions, Ti(IV) 2-ethylhexanoate was used as starting precursor. Photochemical reaction by UV exposure was observed and analyzed by Fourier transform infrared spectroscopy and the reaction was completed within 10 minutes. Uniformly formed 20 nm thick amorphous TiO_x film was confirmed by atomic force microscopy. Amorphous TiO_x RS device, formed as 6 × 6 ㎛ square on 4 ㎛ width electrode, showed forming-less RS behavior in ±4 V and on/off ratio ≈ 20 at 0.1 V. This result shows PMOD process could be applied for low temperature processed ReRAM device and/or low cost, flexible memory device.

• Korean Journal of Materials Research
• /
• v.19 no.2
• /
• pp.61-67
• /
• 2009

Electrolessly deposited Co (Re,P) was investigated as a possible capping layer for Cu wires. 50 nm Co (Re,P) films were deposited on Cu/Ti-coated silicon wafers which acted as a catalytic seed and an adhesion layer, respectively. To obtain the optimized bath composition, electroless deposition was studied through an electrochemical approach via a linear sweep voltammetry analysis. The results of using this method showed that the best deposition conditions were a $CoSO_4$ concentration of 0.082 mol/l, a solution pH of 9, a $KReO_4$ concentration of 0.0003 mol/l and sodium hypophosphite concentration of 0.1 mol/L at $80^{\circ}C$. The thermal stability of the Co (Re,P) layer as a barrier preventing Cu was evaluated using Auger electron spectroscopy and a Scanning calorimeter. The measurement results showed that Re impurities stabilized the h.c.p. phase up to $550^{\circ}C$ and that the Co (Re,P) film efficiently blocked Cu diffusion under an annealing temperature of $400^{\circ}C$ for 1hr. The good barrier properties that were observed can be explained by the nano-sized grains along with the blocking effect of the impurities at the fast diffusion path of the grain boundaries. The transformation temperature from the amorphous to crystal structure is increased by doping the Re.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.3
• /
• pp.216-221
• /
• 2010

Employing statistical design of experiments, the difference in doping behaviors of rare-earth ions and their effects on the dielectric property and microstructure of $BaTiO_3$-MgO-$MnO_2$-($Ba_{0.4}Ca_{0.6}$) $SiO_3-Re_2O_3$ (Re = $Y_2O_3$, $Er_2O_3$) system were investigated. Through the statistical analysis we have found that the amount of $Re_2O_3$ are significantly affecting on the dielectric properties. The $Re_2O_3$ improved the dielectric constant, dielectric loss and R*C constant, so the appropriate contents of $Y_2O_3$ and $Er_2O_3$ were 0.8 ~ 1.2 mol% and 0.8 ~ 1.3 mol%, respectively. The MLCC(mutilayer chip capacitor) with $2.0{\times}1.2{\times}1.2mm$ size and 475 nF was also suited for X7R with the above composition. It showed that the dielectric constant and RC constant were 2,839 and 3,675 ${\Omega}F$, respectively in the sintering condition at $1250^{\circ}C$ in $Po_2$ $10^{-7}$ Mpa.