• Journal of the Mineralogical Society of Korea
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• v.18 no.4 s.46
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• pp.277-288
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• 2005

Perlite, a hydrated volcanic glass, occurs mainly as a bed-like body, and is distributed intermittently along the unconformity surface between the Beomgockri Group and its lower formations, viz. Janggi Group. The perlite is intimately associated with surrounding pumiceous welded tuff and rhyodacites in space and time. Compared to the typical perlite, the perlite is rather silica-poor and impure, and thus, includes lots of phenocrysts and rock fragments. Nearly the perlite is compositionally rather close to a pitchstone than a perlite in water contents. Petrographic comparison between perlite and associated volcanic to volcaniclastic rocks indicates that pumiceous welded tuff and rhyodacite seem to be Protolith of the Perlite. A Zr/$TiO_{2}$-Nb/Y diagram and field occurrence of perlite and their protolithic rocks also conforms the above interpretation. Kn addition, remnant vesicles in perlite strongly reflect that the precursor of perlitic glass appeared to be pumice fragment as well as volcanic glass. The perlite was diagenetically formed by way of a pervasive water-rock interaction at the deposition of the Manghaesan Formation in lacustrine environment. During perlitization, $SiO_{2}$ and alkali tend to be consistently depleted. Preexisting system of the Beomgockri Group based on the perlite formation should be corrected, because the perlite was formed diagenetically without lateral persistence in its occurrence.

• Korean Journal of Materials Research
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• v.15 no.12
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• pp.796-801
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• 2005

In order to reduce the weight of glass in architecture, automobile, bottles, displays, a new technique that can strengthen glass was developed using various method. Generally, the strength achieved of glass-ceramics is higher as is 1.he fracture toughness by the formation of a crystalline phase inside glass. In this study, $70SiO_2-20Na_2O-10CaO-10TiO_2$ glasses were irradiated to strengthen by heterogeneous phase using femto-second laser pulse. Laser pulse irradiation of samples was analyzed by DTA, TMA, XRD, nano-indenter and SEM. Samples irradiated by laser had lower value$(3\~4\times10^{-3}Pa)$ of nano indentation which related with mother glass$(8\times10-3Pa)$ than values. Microcracks were occurred around laser irradiation area when femtosecond laser with the repetition rate of 1kHz was used as the light source to induced heterogeneous phase.

• The Korean Journal of Ceramics
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• v.6 no.3
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• pp.219-223
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• 2000

The ferroelectric SBT films were deposited on Pt/Ti/SiO$_2$/Si substrates by liquid injection metalorganic chemical vapor deposition (MOCVD) with single-mixture solution of Sr[Ta(OEt)$_5$(dmae)]$_2$and Bi(C$_6$ 6/H$_5$)$_3$. The Sr/Ta and Bi/Ta ratio in SBT films depended on deposition temperature and mol ratio of precursor in the single-mixture solution. At the substrate temperature of 40$0^{\circ}C$, Sr/Ta and Bi/Ta ratio were close to 0.4 and 1 at precursor mol ratio of 0.5~1.0, respectively. As-deposited film was amorphous. However, after annealing at 75$0^{\circ}C$ for 30 min in oxygen atmosphere, the diffraction patterns indicated polycrystalline SBT phase. The remanent polarization (Pr) and coercive field (Ec) of SBT film annealed at 75$0^{\circ}C$ were 4.7$\mu$C/$\textrm{cm}^2$ and 115.7kV/cm at an applied voltage of 5V, respectively. The SBT films annealed at 75$0^{\circ}C$ showed practically no polarization fatigue up to 10$^10$ switching cycles.

• Proceedings of the KWS Conference
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• v.43
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• pp.109-111
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• 2004

20 vol.$\%$ SiC를 포함한 두 층간의 $Si_{3}N_{4}/SiC$ 나노 복합재료는$\alpha$ $-Si_3N_4$,13 nm 크기의 나노탄소 분말 그리고 $5\;wt$\%\;Y_2O_3$의 분말로 두 단계 소결을 통하여 제작된다. $Si_3N_4$ 입계 사이의 결합은 소결 후 변하지 않고 남은 compact와 $51\~62\%$의 기공으로 얻어진 표면적 사이의 반응에 의해 생성된다. 이 연구에서는 Ti 합금을 SiC 층에 브레이징을 이용하여 제작하고 기계적 특성을 연구하였다. 다양한 변형율과 결합물의 강도, 변형율 증가에 따른 층간 변화를 연구하였다. 층간 파괴 형태는 금속과 브레이징 합금 사이의 파괴, 세라믹과 브레이징 합금 사이의 파괴, 그리고 세라믹 내부에서의 파괴를 보였다.

• Nuclear Engineering and Technology
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• v.55 no.3
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• pp.1061-1070
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• 2023

Over the last few years, lead-free inorganic metal perovskites have gained impressive ground in empowering satellites in space exploration owing to their material stability and performance evolution under extreme space environments. The present work has examined the versatility of eight such perovskites as space radiation shielding materials by computing their photon, charged particles and neutron interaction parameters. Photon interaction parameters were calculated for a wide energy range using PAGEX software. The ranges of heavy charged particles (H, He, C, N, O, Ne, Mg, Si and Fe ions) in these perovskites were estimated using SRIM software in the energy range 1 keV-10 GeV, and that of electrons was computed using ESTAR NIST software in the energy range 0.01 MeV-1 GeV. Further, the macroscopic fast neutron removal cross-sections were also calculated to estimate the neutron shielding efficiencies. The examined shielding parameters of the perovskites varied depending on the radiation type and energy. Among the selected perovskites, Cs₂TiI₆ and Ba₂AgIO₆ displayed superior photon attenuation properties. A 3.5 cm thick Ba₂AgIO₆-based shield could reduce the incident radiation intensity to half its initial value, a thickness even lesser than that of Pb-glass. Besides, CsSnBr₃ and La_0.8Ca_0.2Ni_0.5Ti_0.5O₃ displayed the highest and lowest range values, respectively, for all heavy charged particles. Ba₂AgIO₆ showed electron stopping power (on par with Kovar) better than that of other examined materials. Interestingly, La_0.8Ca_0.2Ni_0.5Ti_0.5O₃ demonstrated neutron removal cross-section values greater than that of standard neutron shielding materials - aluminium and polyethylene. On the whole, the present study not only demonstrates the employment prospects of eco-friendly perovskites for shielding space radiations but also suggests future prospects for research in this direction.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.216-216
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• 1999

The usage of a stationary plasma thruster (SPT) ion source, invented previously for space application in Russia, in experiments with surface modifications and film deposition systems is reported here. Plasma in the SPT is formed and accelerated in electric discharge taking place in the crossed axial electric and radial magnetic fields. Brief description of the construction of specific model of SPT used in the experiments is presented. With gas flow rate 39ml/min, ion current distributions at several distances from the source are obtained. These was equal to 1~3 mA/$\textrm{cm}^2$ within an ion beam ejection angle of $\pm$20$^{\circ}$with discharge voltage 160V for Ar as a working gas. Such an extremely high ion current density allows us to obtain the Ti metal films with deposition rate of $\AA$/sec by sputtering of Ti target. It is shown a possibility of using of reactive gases in SPT (O2 and N2) along with high purity inert gases used for cathode to prevent the latter contamination. It is shown the SPT can be operated at the discharge and accelerating boltages up to 600V. The results of presented experiments show high promises of the SPT in sputtering and surface modification systems for deposition of oxide thin films on Si or polymer substrates for semiconductor devices, optical coatings and metal corrosion barrier layers. Also, we have been tried to establish in application of the modeling expertise gained in electric and ionic propulsion to permit numerical simulation of additional processing systems. In this mechanism, it will be compared with conventional DC sputtering for film microstructure, chemical composition and crystallographic considerations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.28-28
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• 2010

This study realized low-temperature crystallization process of the $Ba_{0.6}Sr_{0.4}TiO_3$ (BST) thin films without thermal damage of substrate using excimer laser annealing (ELA) and structural and electrical characteristics were investigated. The amorphous BST thin films were prepared on Pt/Ti/$SiO_2$/Si substrate by sol-gel method at $250^{\circ}C$. The ELA was carried out using KrF excimer laser which provided excitation wavelength of 248 nm. The beam homogenizing system was used in order to homogenize beam shape of Gaussian fit. The XRD and SEM were used to analyze structural characteristics and the microwave capacitance, dielectric loss and tunability of the BST films were measured by a symmetrical stripline resonator method with shorted end. Consequently, the crystallinity of BST thin films were improved after ELA process and RF tunable capacitor was demonstrated at low temperature below $300^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.11
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• pp.990-995
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• 1998

본 연구에서는 PZT(20/80)과 PZT(80/20) 금속 alkoxide용액을 Pt/Ti/$SiO_2$/Si 기판위에 상호 반복시킨 강유전성 PZT(20/80)/PZT(80/20) 이종층 박막을 제작하였다. 건조와 소결을 한번 행한 PZT 이종층 박막의 평균 두께는 약 80~90 nm이었다. 제작된 모든 PZT 박막은 rosette상이 없는 치밀하고 균질한 미세구조를 나타내었으며, 하부의 PZT층은 열처리시 상부 PZT층은 열처리시 상부 PZT 박막의 페로브스카이트 형성에 대해 nucleation site로 작용하였다. 유전상수, 피로특성 및 누설전류특성 등은 단일 조성의 PZT(20/80), PZT(80/20) 박막에 비해 우수한 특성을 나타내었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.247-250
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• 1998

Ferroelectric PZT(10/90)PZT(90/10) heterolayered thin films were fabricated by spin-coating method on the Pt/Ti/SiO$^2$/Si substrate alternately using PZT(10/90) and PZT(90/10) metal alkoxide solutions. The coating and heating procedure was repeated six times to form PZT heterolayered films. The surface, cross-sectional microstructures and thickness of the films were observed using scanning electron microscope(SEM). The relative dielectric constant and dielectric loss of the 5-coated PZT heterolayered films were 1331 and 4.8% respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.291-291
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• 2010

The SBN ceramic thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at substrate temperature of 300[$^{\circ}C$]. The grain and crystallinity of SBN thin films were increased with the increase of annealing temperature. The crystallinity of SBN thin films were increased with increase of annealing temperature in the temperature range of 600~800[$^{\circ}C$]. the surface rougness showed about 20 [nm].