• 제목/요약/키워드: TiO-N

검색결과 1,341건 처리시간 0.035초

PMN-PNN-PZT 세라믹스의 미세구조 및 압전 특성 (Microstructure and Piezoelectric Properties of PMN-PNN-PZT Ceramics)

  • 류주현;김승원
    • 한국전기전자재료학회논문지
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    • 제30권8호
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    • pp.496-500
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    • 2017
  • $Pb(Mn_{1/3}Nb_{2/3})_{0.07}(Ni_{1/3}Nb_{2/3})_{0.10}(Zr_{0.5}Ti_{0.5})_{0.83}O_3$ composition ceramics with high piezoelectric properties were fabricated by the columbite precursor method for ultrasonic generators, and the effects of sintering temperature on microstructure and piezoelectric properties were systematically investigated. It was found that the tetragonality of the ceramics decreased with increase in sintering temperature. Moreover, excellent physical properties such as $d_{33}=447pC/N$, ${\varepsilon}_r=1,843$, $k_p=0.641$, and $Q_m=1,207$ were obtained for an ultrasonic generator when the second calcination temperature and sintering temperature were $720^{\circ}C$ and $920^{\circ}C$, respectively.

DSSC광전극의 나노구조 제어 및 투명전극 소재 개발

  • 장현석
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.28-28
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    • 2010
  • Photoelectrochemical solar cells such as dye-sensitized cells (DSSCs), which exhibit high performance and are cost-effective, provide an alternative to conventional p-n junction photovoltaic devices. However, the efficiency of such cells plateaus at 11-12%, in contrast to their theoretical value of 33%. Improvements in efficiency can only occur through a fundamental understanding of the underlying physics, materials, and device designs of DSSCs. A photoelectrode consisting of semiconducting oxide nanoparticles and a transparent conducting oxide electrode (TCO) is a key component of DSSC and design of photoelectrode materials is one of promising strategies to improving energy conversion efficiency. We introduce monodisperesed $TiO_2$ nanoparticles prepared by forced hydrolysis method and their superiority as photoelectrode materials was characterized with aids of optical and electrochemical analysis. Multi-layered TCO materials are also introduced and their feasibility for use as photoelectrodes is discussed in terms of optical absorption and charge collecting properties.

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Effect of plasma treatment to surface of the titanium oxide deposited by plasma enhanced atomic layer deposition

  • 권태석;강병우;김경택;문대용;김웅선;문연건;박종완
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2009년도 추계학술대회 초록집
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    • pp.183-184
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    • 2009
  • 자체 발광형 디스플레이는 잠재적인 장점에도 불구하고 수분에 대한 열화와 같은 기술적인 문제로 상업화하기 어려움이 있어 수분 투습 방지막이 필요하다. 이에 본 연구에서는 작은 결점 크기와 낮은 결점 밀도를 가지는 $TiO_2$ 보호막을 PEALD법으로 증착 하여 $N_2$$NH_3$ plasma 처리에 따른 표면 효과를 알아보았다.

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Titanate nanotube를 이용한 ECD의 전기화학적 특성연구 (Electrochemical properties of ECD using Titanate nanotube)

  • 오효진;이남희;이대걸;윤영웅;황종선;김선재
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2009년도 제40회 하계학술대회
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    • pp.2119_2120
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    • 2009
  • 전압을 인가하였을 때 전계방향에 의해 가역적으로 색이 변화하는 현상을 전기변색(electrochromism)이라고 한다. 이러한 전기채색현상을 보이는 물질을 전기채색물질(electrochromism materials)이라고 하며, 전기채색 물질에 의한 소자를 전기채색소자(electrochromism device : ECD)라고 한다. 전기채색현상은 투과율(transmittance), 반사율(reflectance)의 가역적이며 가시적인 변화이고, 전기화학적인 산화환원 반응과 관련이 있다. 따라서 본 연구에서는 Titanate nanotube(TNT)를 제조하고 전기변색소자(ECD)에 응용하였다. SEM, XRD, UV-Vis등을 이용하여 재료학적 분석을 시행하였으며, 전기화학적 테스트로 cyclic voltammetry를 측정 하였다. 그 결과 TNT 분말은 직경 약 20~30 nm, 길이 약 500~600 nm 의 입자형상을 나타내었으며, X-선 회절시험결과 $H_2Ti_2O_5{\cdot}H_2O$의 층상구조를 나타내었다. 제조된 막은 FTO glass 위에 PEI/(TNT/TBAOH)$_{n-1}$/PDDA의 순으로 코팅되었다. 전기화학적 테스트를 위하여 2전극 시스템을 제작하였으며, 여러 종류의 액체 전해질을 제작하여 cycle voltammetry를 시행하였다. 그 결과, 각각의 전해질에서 "-"영역의 산화환원전위 피크가 뚜렷하게 나타났으며, 짙은 갈색으로의 채색현상을 나타냈다. 본 연구의 결과로서 TNT 박막을 이용한 ECD은 광조절 유리로서 뿐만 아니라, 여러 전기채색 디바이스에 응용될 것으로 사료된다.

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PZT-PMN 압전 세라믹의 압전 및 유전 특성 (The Piezoelectric and Dielectric Properties of PZT-PMN Piezoelectric Ceramics)

  • 이종섭;이용희;채홍인;정수현;임기조
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2001년도 하계학술대회 논문집 C
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    • pp.1439-1441
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    • 2001
  • In this paper, the piezoelectric and dielectric properties as a function of x and r in $yPbZr_xTi_{1-x}O_3-(1-y)Pb(Mn_{1/3}Nb_{2/3})O_3$ piezoelectric ceramics is investigated. As a results, when y is 0.95 and x is 0.505, electromechanical coupling factor($k_p$), permittivity(${{\varepsilon}_{33}}^T/{\varepsilon}_0$), piezoelectric strain constant($d_{33}$) and mechanical quality factor($Q_m$) are 58[%], 1520, 272 [pC/N] and 1550, respectively. From XRD analysis, when x is 0.505, it is MPB which present rhombohedral and tetragonal phase in same quantity. Also, From SEM observation. when sintering temperature is 1150[$^{\circ}C$], grain size is about 2 [${\mu}m$]. As y decreases, piezoelectric and dielectric properties and curie temperature decreases, but mechanical quality factor and sintering temperature increases.

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A Geochemical Boundary in the East Sea (Sea of Japan): Implications for the Paleoclimatic Record

  • Han, Sang-Joon;Hyun, Sang-Min;Huh, Sik;Chun, Jong-Hwa
    • Ocean and Polar Research
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    • 제24권2호
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    • pp.167-175
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    • 2002
  • Sediment from six piston cores from the East Sea (Sea of Japan) was analyzed for evidence of paleoceanographic changes and paleoclimatic variation. A distinct geochemical boundary is evident in major element concentrations and organic carbon content of most cores near the 10-ka horizon. This distinctive basal Holocene change is interpreted to be largely the result of changing sediment sources, an interpretation supported by TiO_2/Al_2O_3$ ratios. Organic carbon and carbonate contents also differ significantly between the Holocene and glacial intervals. The C/N ratio of organic matter is greater than 10 during the glacial period, but is less than 10 for the Holocene, suggesting that the influx of terrigenous organic matter was more volumetrically important than marine organic matter during glacial times. The chemical index of weathering (CIW) is higher for the Holocene than the glacial interval, and changes markedly at the basal Holocene geochemical boundary. Silt fractions are higher in the glacial interval, suggesting a strong effect of climate on silt particle transportation: terrigenous aluminosilicates and continental organic carbon transport were higher during glacial times than during the Holocene. Differences in sediment composition between the Holocene and glacial period are interpreted to have been climatically induced.

Enhancement in Piezoelectric Properties of PZT-Based Ceramics by High Energy Ball-Milling Treatment of Solid-State Synthesized Powders

  • Kim, Dae-Uk;Lee, Han-Bok;Hung, Nguyen Viet;Pham, Ky Nam;Han, Hyoung-Su;Lee, Jae-Shin
    • 한국분말재료학회지
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    • 제17권5호
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    • pp.404-408
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    • 2010
  • The effects of high energy ball-milling (HEBM) on the sintering behavior and piezoelectric properties of 0.1 wt% $Li_2CO_3$ doped 0.8Pb($Mg_{1/3}Nb_{2/3}$)$O_3$-0.2Pb($Zr_{0.475}Ti_{0.525}$)$O_3$ (PMN-PZT) ceramics were investigated. It was found that HEBM treatment was quite effective to reduce the average particle size down to 300 nm, leading to increased density as well as enhanced piezoelectric properties of a sintered specimen even though prolonged HEBM resulted in unwanted secondary phases that caused a degradation of piezoelectric properties. The dielectric constant ($\varepsilon_r$), piezoelectric coupling factor ($k_p$) and piezoelectric constant $d_{33}$ of 0.1 wt% $Li_2CO_3$ doped PMN-PZT ceramics prepared via HEBM for 10 h reached 2040, 0.68 and 554 pC/N, respectively.

Effect of double pinning mechanism in BSO-added GdBa2Cu3O7-x thin films

  • Oh, J.Y.;Jeon, H.K.;Lee, J.M.;Kang, W.N.;Kang, B.
    • 한국초전도ㆍ저온공학회논문지
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    • 제19권3호
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    • pp.13-17
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    • 2017
  • We investigated the effect of self-assembled BSO nano-defects as pinning centers in BSO-added GdBCO films when the thicknesses of films were varied. 3.5 vol. % BSO-added GdBCO films with varying thicknesses from 200 nm to 1000 nm were deposited on $SrTiO_3$ (STO) substrate by using pulsed laser deposition (PLD) process. For the films with thicknesses of 400 nm and 600 nm, 'anomaly shoulders' in $J_c-H$ characteristic curves were observed near the matching field. The anomaly shoulders appeared in the field dependence of $J_c$ may be attributed to the existence of double pinning mechanisms in thin films. The fit to the pinning force density as a function of reduced field h ($H/H_{irr}$) using the Dew-Hughes' scaling law shows that both the 400 nm- and the 600 nm-thick films have double pinning mechanisms while the other films have a single pinning mechanism. These results indicate that the self-assembled property of BSO result in different role as pinning centers with different thickness.

평면형 대기압 유전장벽방전장치의 제작 및 동작특성분석 (Fabrication of Atmospheric Coplanar Dielectric Barrier Discharge and Analysis of its Driving Characteristics)

  • 이기융;김동현;이호준
    • 전기학회논문지
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    • 제63권1호
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    • pp.80-84
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    • 2014
  • The discharge characteristics of Surface Dielectric Barrier Discharge (SDBD) reactor are investigated to find optimal driving condition with adjusting various parameter. When the high voltage with sine wave form is applied to SDBD source, successive pulsed current waveforms are observed owing to multiple ignitions through the long discharge channel and wall charge accumulation on the dielectric surface. The discharge voltage, total charge between dielectrics, mean energy and power are calculated from measured current and voltage according to electrode gap and dielectric thickness. Discharge mode transition from filamentary to diffusive glow is observed for narrow gap and high applied voltage case. However, when the diffusive discharge is occurred with high applied voltage, the actual firing voltage is always lower than that with low driving voltage. The $Si_3N_4$, $MgF_2$, $Al_2O_3$ and $TiO_2$ are considered for dielectric protection and high secondary electron emission coefficient. SDBD with $MgF_2$ shows the lowest breakdown voltage. $MgF_2$ thin film is proposed as a protection layer for low voltage atmospheric dielectric barrier discharge devices.

Effect of annealing temperature on the structural and electrical properties of titanium nitride film resistors

  • Cuong, Nguyen Duy;Kim, Dong-Jin;Kang, Byoung-Don;Kim, Chang-Soo;Yoon, Soon-Gil
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.36-37
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    • 2006
  • Titanium oxy-nitride ($TiN_O_y$) thin films were deposited on $SiO_2$/Si substrates using reactive dc magnetron sputtering, and were then annealed at various temperatures in air ambient to incorporate oxygen into the films. The effect of annealing temperature on the structural and electrical properties of the films was investigated. The grain size of the films decreases with increasing annealing temperature. On the other hand, crystallinity of the films is independent of annealing temperature in air ambient. Resistivity of the films increases remarkably as an annealing temperature increases and temperature coefficience of resistance (TCR) of the films varies from a positive value to a negative value. The films annealed at $350^{\circ}C$ for 30 min exhibited a near-zero TCR value of approximately -5 ppm/K. The decrease of the grain size with increasing annealing temperature was attributed to an increase of oxygen concentration incorporated into the films during anncaling treatment.

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