• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.287.1-287.1
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• 2016

Three-dimensional (3-D) semiconductor nanoarchitectures, including nano- and micro- rods, pyramids, and disks, are emerging as one of the most promising elements for future optoelectronic devices. Since these 3-D semiconductor nanoarchitectures have many interesting unconventional properties, including the use of large light-emitting surface area and semipolar/nonpolar nano- or micro-facets, numerous studies reported on novel device applications of these 3-D nanoarchitectures. In particular, 3-D nanoarchitecture devices can have noticeably different current spreading characteristics compared with conventional thin film devices, due to their elaborate 3-D geometry. Utilizing this feature in a highly controlled manner, color-tunable light-emitting diodes (LEDs) were demonstrated by controlling the spatial distribution of current density over the multifaceted GaN LEDs. Meanwhile, for the fabrication of high brightness, single color emitting LEDs or laser diodes, uniform and high density of electrical current must be injected into the entire active layers of the nanoarchitecture devices. Here, we report on a new device structure to inject uniform and high density of electrical current through the 3-D semiconductor nanoarchitecture LEDs using metal core inside microtube LEDs. In this work, we report the fabrications and characteristics of metal-cored coaxial $GaN/In_xGa_{1-x}N$ microtube LEDs. For the fabrication of metal-cored microtube LEDs, $GaN/In_xGa_{1-x}N/ZnO$ coaxial microtube LED arrays grown on an n-GaN/c-Al2O3 substrate were lifted-off from the substrate by wet chemical etching of sacrificial ZnO microtubes and $SiO_2$ layer. The chemically lifted-off layer of LEDs were then stamped upside down on another supporting substrates. Subsequently, Ti/Au and indium tin oxide were deposited on the inner shells of microtubes, forming n-type electrodes of the metal-cored LEDs. The device characteristics were investigated measuring electroluminescence and current-voltage characteristic curves and analyzed by computational modeling of current spreading characteristics.

• Journal of Korean Society on Water Environment
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• v.28 no.1
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• pp.115-120
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• 2012

Different colloidal particles generally co-exist in the water and wastewater. Thus, there needs to identify practical electrokinetic characteristics of the particles, comparing with the case when each colloidal material is independently distributed. In this study, changes of overall zeta potential was examined through mixed dispersions of $TiO_{2}$ and $MnO_{2}$. The mixing ratios were classified into 3-type in order to distinguish the effects of the proportions of each particle from those of total concentration in colloidal suspensions. The types are single colloidal dispersions of $TiO_{2}$ and $MnO_{2}$ (1:0, 0:1), mixed dispersions at different ratios (0.75:0.25, 0.5:0.5, 0.25:0.75), and a mixed dispersion with doubled concentration (1:1), respectively. It showed that the overall variation of zeta potential as a function of pH was intensified in a colloidal dispersion with the ratio of 1:1. It was concerned that the double action of ion would contribute to this result. On the one hand, the zeta potentials of each colloidal dispersion commonly decreased at the state of strong acid and base under the influence of compression of the electric double layer. The changing patterns were also considered through calculating total interaction energy between colloidal particles based on DLVO theory and measuring turbidity of the colloidal dispersions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.12
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• pp.1077-1082
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• 2008

To fabricate a multi-layered piezoelectrics/electrodes structure, the piezoelectrics should be sintered at the temperature lower than $950^{\circ}C$ to use the silver electrode, which is cheaper than the electrodes containing noble metals such as Pd and Pt. Therefore, in this study, we modified the composition of $Pb(Zr,Ti)O_3$-based material as $(Pb_{0.98}Cd_{0.02})(Ni_{1/3}Nb_{2/3})_{0.25}Zr_{0.35}Ti_{0.4}O_3$ to lower the sintering temperature and to improve the piezoelectric properties. Small amount of $MnCO_3$, $SiO_2$, and $Pb_3O_4$ were also added to lower the sintering temperature of the ceramic. The prepared raw powders were mixed by using a ball mill for 24 hours. And then the mixed powders were calcinated for 2 hours at $800^{\circ}C$. The calcinated powders were again crushed with the ball mill for 72 hours. The final powders were pressed for making the shape of ${\emptyset}15\;mm$ disk. The disk-type samples were sintered at temperature range of $850{\sim}950^{\circ}C$. The crystal phases of the sintered specimens were perovskite structure without secondary phases. All of the measured electrical properties such as electromechanical coupling coefficients ($k_p$), mechanical quality factors ($Q_m$), and piezoelectric charge constants ($d_{33}$) were decreased with decreasing the sintering temperatures. The electrical properties measured at the sample sintered at $950^{\circ}C$ were 54% of $k_p$, 503 of $Q_m$, and 390 pC/N of $d_{33}$, respectively. These properties were considered to be fairly good for the application of multi-layered piezoelectric generators or actuators.

• Transactions on Electrical and Electronic Materials
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• v.12 no.6
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• pp.249-252
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• 2011

We investigated the low firing of $Li_2CO_3$ added $0.2Pb(Mg_{1/3}Nb_{2/3})O_3$ - 0.3Pb($Fe_{1/2}Nb_{1/2}$) - $0.5Pb(Zr_{0.475}Ti_{0.525})O_3$ (PMN-PFN-PZT) ceramics and multilayer actuators (MLAs) using Ag inner electrodes. It was found that 0.1 wt% $Li_2CO_3$ was quite effective in lowering the sintering temperature of PMN-PFN-PZT ceramics from $1,100^{\circ}C$ down to $900^{\circ}C$ without deteriorating their piezoelectric ceramics ($d_{33}$ = 425 pC/N and $k_p$ = 61.9%). However, excess $Li_2CO_3$ up to 0.3 wt% brings about unwanted problems such as the formation of a $LiPbO_2$ secondary phase and subsequent degradation in the piezoelectric properties. Using 0.1 wt% $Li_2CO_3$ added PMN-PFN-PZT ceramics, MLAs with Ag inner electrodes were successfully fabricated, resulting in a normalized strain of 580 pm/V at an electric field of 1.5 kV/mm.

• Korean Journal of Optics and Photonics
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• v.12 no.2
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• pp.143-149
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• 2001

We performed the intracavity frequency-doubling of a tunable continuous-wave Ti:sapphire laser using a lithium triborate $(LiB_3O_5, LBO)$ crystal. For an efficient intracavity frequency-doubling, we measured the spectral and the angular bandwidth about the $\theta$-direction of LBO crystal. The measured values at a fundamental wavelength of 800 nm were 1.54 nm.cm and 3.8 mrad.cm, respectively. As a result of an intracavity frequency-doubling, we obtained the second-harmonic generation output power of 5.3 mW at 400 nm with the full width at half maximum(FWHM) of 0.089 nm from the fundamental output power of 185 mW at 800 nm. The frequency-doubled output was tuned from 397 nm to 403 nm.403 nm.

• Journal of the Korean Ceramic Society
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• v.39 no.9
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• pp.846-850
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• 2002

A PMN-PT-BT/Ag composite was prepared by surface modification with MgO sol with hoping to suppress silver's migration during sintering. The mixture of PbO, $N_2O_5,\;TiO_2\;with\;Mg(NO_3)_2$ instead of MgO was ball milled, the solvent was removed and then the dried powders were calcined at 950$^{\circ}C$/1h. The calcined powder were treated with 3.0 mol% $Ag_2O$ and 1.0 wt% MgO sol and calcined at 550$^{\circ}C$/1h. The dielectrics sintered at 1000$^{\circ}C$/4h under a flowing oxygen showed the density of 7.84g/$cm^3$, the room temperature dielectric constant of 18400, the dielectric loss of 2.4%, the specific resistivity of $0.24{\times}10^{12}{\Omega}{\cdot}cm$. It also showed the bending strength of $120.7{\pm}11.26$ MPa and the fracture toughness of $0.87{\pm}0.002\;MPam^{1/2}$ which were comparable to commercial PZT. The microstructure sonsisted of grains of ∼4${\mu}m$. SEM and SIMS analysis showed that Ag grew as ∼1${\mu}m$ and excess MgO as ∼0.5${\mu}m$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.63-67
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• 1996

In this paper, effect of MnO$_2$ addition(0, 0.1, 0.2, 0.3, 0.5wt%) on the microstructure, dielectric and piezoelectric properties of [xPMW - (0.15-x) PNN] - [yPT-(0.85-y)PZ] (x=0, 0.01, 0.02, 0.03, 0.05, y = 0.35, 0.40, ().425, 0.45, 0.5) were investigated. When Ti/Zr ratio was 1.0, dielectric and piezoelectric properties were highest value. With PMW 2mol%, dielectric constant, dielectric constant (d$\_$33/, d$\_$31/) and electromechanical coupling factor (kp, k$\_$31/) were highest values of 1995, 479, 186(x10$\^$-12/C/N), 0.61, 0.36, respectively. With the addition of MnO$_2$, dielectric constant, electromechanical coupling factor (kp, k$\_$31/) were decreased, but with 0.3wt% MnO$_2$, eletromechanical coupling factor was highest value of 0.63. With the addition of MnO$_2$, mechanical quality(Q$\_$m/ was increased.

• Electrical & Electronic Materials
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• v.9 no.3
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• pp.251-258
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• 1996

Sol-Gel derived ferroelectric Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ thin films have been fabricated on Pt/Ti/ $SiO_{2}$/Si substrate. Two kinds of fast annealing methods, F-I (six times of intermediate and final annealing) and F-II(one final annealing after six times of intermediate annealing) were used for preparation of multi-coated PZT thin films. As the annealing temperature was increased, high capacitance could be obtained, for instance, 2700.angs.-thick PZT thin film annealed at 680.deg. C had a capacitance value of approximately 20nF at 1kHz. In addition, it is found that the dielectric constant is a function of the perovskite phase fraction. In case of F-I method, PZT thin film had a remanent polarization(Pr) of 8-15.mu.C/c $m^{2}$ and a coercive field( $E_{c}$) of 35-44kV/cm according to annealing temperature, whereas PZT film fabricated by F-II method had as high as 24-25.mu.C/c $m^{2}$ and 48-59kV/cm, respectively. As a result of measuring Curie temperature, PZT thin film had a range of 460-480.deg. C by F-I method and more or less higher range of 525-530.deg. C by F-II method, which implied that different microstructures could cause the different Curie temperature. Through I-V measurement, leakage current of PZT thin film fabricated by F-I and F-II methods was 64nA/c $m^{2}$ and 2.2.mu.A/c $m^{2}$ in the electric field of 100kV/cm, respectively.y.y.y.

• ETRI Journal
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• v.24 no.3
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• pp.211-220
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• 2002

This study characterizes an oxide etching process in a magnetically enhanced reactive ion etching (MERIE) reactor with a $CHF_3/CF_4$ gas chemistry. We use a statistical $2^{4-1}$ experimental design plus one center point to characterize the relationships between the process factors and etch responses. The factors that we varied in the design include RF power, pressure, and gas composition, and the modeled etch responses were the etch rate, etch selectivity to TiN, and uniformity. The developed models produced 3D response plots. Etching of $SiO_2$ mainly depends on F density and ion bombardment. $SiO_2$ etch selectivity to TiN sensitively depends on the F density in the plasma and the effects of ion bombardment. The process conditions for a high etch selectivity are a 0.3 to 0.5 $CF_4$ flow ratio and a -600 V to -650 V DC bias voltage according to the process pressure in our experiment. Etching uniformity was improved with an increase in the $CF_4$ flow ratio in the gas mixture, an increase in the source power, and a higher pressure. Our characterization of via etching in a $CHF_3/CF_4$ MERIE using neural networks was successful, economical, and effective. The results provide highly valuable information about etching mechanisms and optimum etching conditions.

• Resources Recycling
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• v.14 no.5 s.67
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• pp.32-39
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• 2005

Leaching behavior of nickel contained in waste Multi-Layer Ceramic Capacitor (MLCC) was investigated using a batch reactor. The effects of acid type, acid concentration, leaching temperature, particle size, and reaction time on the extraction of nickel metal from waste MLCC were examined. As a result, 97% of nickel contained in waste MLCC was leached out in 30 min at the temperature of $90^{\circ}C$ under the condition of $HNO_3$ concentration 1N, solid/liquid ratio 5 g/L and particle size $-300/+180{\mu}m$. It was also found that a Jander equation was useful to fit well the leaching rate data. The rate of nickel leaching is controlled by pore diffusion in $BaTiO_3$ layer and has an activation energy of 37.6 kJ/mol (9.0 kcal/mol).