• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.148-148
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• 2011

일반적으로 LED 제작에 사용되는 c-plane GaN는 c축 방향으로 발생하는 분극의 영향을 받게 된다. 분극은 LED내 양자우물의 밴드를 기울게 하여 그 결과 전자와 홀의 재결합 확률을 감소시켜 낮은 내부양자효율을 가지게 된다. 이러한 문제를 해결하기 위한 여러 가지 방법들이 제시되었는데 그 중에서도 특히 a-plane 혹은 m-plane면과 같은 무분극 면을 사용하는 GaN LED가 주목받고 있다. 그 이유는 무분극 면은 분극이 발생하는 c축과 수직이기 때문에 분극의 영향을 받지 않아 높은 내부 양자효율을 가질수 있다. 본 연구에서는 MOCVD 장비를 사용하여 2인치 r-plane 사파이어 기판위에 3um두께의 a-plane GaN을 성장하였다. 그위에 2um정도로 Si을 도핑하여 n-type GaN 형성한후 단일 양자우물, 그리고 Mg을 도핑하여 p-type GaN을 성장하였다. 장파장대역의 a-plane LED의 특성을 알아보기 위해서 양자우물 형성시 In의 조성비를 높였다. 일반적인 포토리소그래피 공정과 Dry etching 공정을 사용하여 메사구조를 형성하였으며 Ti/Al/Pt/Au와 Ni/Au를 각각 n-type과 p-type의 전극 물질로 사용하였다. 제작된 LED의 특성을 파악하기 위해서 인가전류를 0부터 100mA까지 출력 스펙트럼을 측정하였으며 orange대역의 파장을 갖는 LED를 얻었다. 인가전류별 Peak 파장의 변화와 반측폭의 변화를 파악하여 장파장 대역의 a-plane LED의 특성을 확인하였다.

• Journal of Korea Foundry Society
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• v.18 no.6
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• pp.550-554
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• 1998

The microstructures of rapidly solidified binary Ti-Al alloys containing $45{\sim}58\;at%Al$ have been studied using C/S (carbon/sulfur), N/O (nitrogen/oxygen) analyser, X-ray fluorescence spectrometer (XRF), X-ray diffractometer (XRD), optical microscope (OM) and scanning electron microscope (SEM). The phases present in the alloys and their distribution were found to be a sensitive function of Al content. Essentially single-phase (${\gamma}$) microstructures were observed to alloys with 45 at%Al, 55 at%Al and 58 at%Al. In other content alloys, two phase (${\alpha}_2$, ${\gamma}$) microstructures were observed. The 48 at%Al, 52 at%Al alloys contain (${\gamma}+{\alpha}_2$) phase and ${\alpha}_2$ phase. These results indicate that rapid solidification affect the solidification path, then metastable phase forming during solidification.

• Transactions on Electrical and Electronic Materials
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• v.16 no.5
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• pp.280-284
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• 2015

Among many the oxynitrides, TiNO and AlCrNO, have diverse applications in different technological fields. We prepared TiNO/AlCrNO/Al thin films on aluminum substrates using the method of dc reactive magnetron sputtering. The reactive gas flow, gas mixture, and target potential were applied as the sputtering conditions during the deposition in order to control the chemical composition. The multi-layer films have been prepared in an Ar and O₂+N₂ gas mixture rate. The surface properties were estimated by performing scanning electron microscopy (SEM). At a wavelength range of 0.3~2.5 μm, the exact composition and optical properties of thin films were measured by Auger electron spectroscopy (AES) and Ultraviolet-visible-near infrared (UV-Vis-NIR) spectrophotometry. The optimal absorptance of multi-layer films was exhibited above 95.5% in the visible region of the electromagnetic spectrum, and the reflectance was achieved below 1.89%.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2003.10b
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• pp.43-46
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• 2003

Prediction of final microstructures after high temperature forming of Ti-6Al-4V alloy was attempted in this study. Using two typical microstructures, i.e., equiaxed and $Widmanst\ddot{a}tten$ microstructures, compression test was carried out up to the strain level of 0.6 at various temperatures $(700\~1100^{\circ}C)$ and strain rates $(10^{-4}\~10^2/s)$. From the flow stress-strain data, parameters such as strain rate sensitivity (m) and activation energy (Q) were calculated and used to establish constitutive equations for both microstructures. Then, finite element analysis was performed to predict the final microstructure of the deformed body, which was well accorded with the experimental results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.656-658
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• 2004

Pb$(Zr_{0.8}Ti_{0.2})TiO_3$ powder were prepared by the sol-gel method using a solution of Pb-acetate, Zr n-propoxide and Ti iso-propoxide. PZT thick film were fabricated by the screen printing method, and the structural and ferroelectric properties asafunting of the sintering temperature were studied. PZT film thickness, obtained by four screen printing, was approximately $70\sim90{\mu}m$. The relative dielectric constant and the dielectric loss of the PZT thick film sintered at $1050^{\circ}C$t were approximately 676 and 1.4%, respectively. The remanent polarization and the coercive field of the PZT thick film sintered at $1050^{\circ}C$ were $21.15{\mu}C/cm^2$ and 10.1 kV/cm, mapetively

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1991.10a
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• pp.68-72
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• 1991

In this study, to improve temperature stability 0.05 Pb(Sn$\_$$\frac{1}{2}$/Sb$\_$$\frac{1}{2}$/O$_3$ - 0.35PbTiO$_3$ - 0.60PbZrO$_3$ + 0.4[wt%]MnO$_2$ piezoelctric oeramics of low dielectric constant and large mechanical quality factor were manufactured with the addition of Cr$_2$O$_3$by Hot Press method. And the SAW delay line was fabricated and the propagation characteristics of SAW was investigated, and the SAW filter was fabricated on C4 added by 0.2[wt%] Cr$_2$O$_3$and its frequency characteristics was investigated. The specimen, whose propagation characteristics of surface acoustic wave were the best, was C4 added by 0.2[wt%] Cr$_2$O$_3$, and its electromechanical coupling factor(ks$^2$) was 3.11[%] and its temperature coefficient of the center frequency (C$\_$fo/) was -21.27[ppm/$^{\circ}C$]. The 31[MHz] SAW IF filter of C4 scarcely had diffraction phenomena and its group delay time was 1.4673 ${\pm}$40[ns] in the pass band, and the insertion loss was -24.419[dB] on no impedance matching.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.746-748
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• 2002

The effect of $MnO_2$ addition in $0.05Pb(Sn_{0.5}Sb_{0.5})O_3-0.8PbZrO_3-0.15PbTiO_3$(0.05PSS-0.8PZ-0.15PT) ceramics on crystal structure and electrical properties were studied. The sintering temperature and time were $1230^{\circ}C{\sim}1270^{\circ}C$ and 2hr, respectively. Then crystal structure, dielectric and pyroelectric properties were investigated. All the poled specimens showed the lower dielectric constant and $tan{\delta}$ than the unpoled specimens. Dielectric constant at 1kHz of the 0.05PSS-0.8PZ-0.15PT(MnO2 0.3wt%) system specimen sintered at $1250^{\circ}C$ for 2hr were 270 and showed the lowest $tan{\delta}$ of 0.2% after poling of $2kV_{DC}/mm$ at $150^{\circ}C$ for 30 minutes. Pyroelectric coefficient was maximum value of $50nC/cm^2K$ and Curie temperature was $224^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.9
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• pp.577-580
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• 2015

In this paper, in order to develop the composition ceramics with the outstanding piezoelectric properties, $Pb(Mg_{1/2}W_{1/2})_{0.03}(Ni_{1/3}Nb_{2/3})_{0.09}(Zr_{0.5}Ti_{0.5})_{0.88}O_3$ ceramics substituted with $BiFeO_3$ were prepared by the conventional solid-state reaction method. The addition of small amount of $Li_2CO_3$ and $CaCO_3$ as sintering aids decreased the sintering temperature of the ceramics. The effects of $BiFeO_3$ substitution on their piezoelectric and dielectric properties were investigated. when 0.015 mol $BiFeO_3$ was substituted, the optimal physical properties of $d_{33}=590pC/N$, $E_c=8.78kV/mm$ were obtained.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.14-14
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• 2003

Silicon carbide (SiC)는 높은 power 영역과 높은 온도영역에서도 작동 가능한 우수한 반도체 물질이다. 또한 우수한 열적 화학적, 안정성을 가지고 있어 가흑한 조건에서의 소자로써도 사용 가능하다. 현재 SiC 적용분야로는 우수한 전기적, 기계적 성질을 이용한 미세소자(MEMS)와 GaN 와 거의 유사한 격자상수를 가지는 것을 이용한 GaN epitaxial 성장의 기판으로도 사용되어진다. 그러나 SiC 는 기존의 습식식각 용매에 대해 화학적 안정성을 가지고 있기 때문에 전자소자의 제작에 있어서 플라즈마를 이용한 건식식각의 중요성이 대두되어지고 있다. 소자제작에 있어 이러한 건식식각시 식각 단면의 제어, 이온에 의한 낮은 손상 정도, 매끄러운 식각 표면, 그리고 고속의 식각 속도둥이 요구되어진다. 본 실험에서는 식각 속도의 증가와 수직한 식각 단면둥을 획득하기 위하여 SF6 플라즈마에서 Source power, dc bias voltage, 그리고 외부에서 인가되는 자속의 세기를 변화시쳐가며 식각 속도, 식각 마스크와의 식각 션택비, 식각 단면둥과 같은 SiC 의 식각 특성을 관찰하였다. 식각 후 식각 단면은 주사전자 현미경(SEM)을 통해 관찰하였다. 본 실험에서의 가장 높은 식각 속도는 분당 1850n 로써 이때의 공정조건은 1400W 의 inductive power, -600V 의 dc bias voltage, 20G 의 외부자속 세기이었다. 또한, 높은 inductive power 조건과 낮은 dc bias voltage 조건에서 Cu는 $SF_6$ 플라즈마 내에서 식각부산물의 증착으로 인해 SiC 와 무한대의 식각선택비를 보였다. 이러한 Cu 마스크를 사용한 SiC 의 식각에서는 식각 후 수직한 식각 단변을 관찰할 수 있었다. 것올 알 수 있다. 따라서, 기존의 pve 보다 세라믹 기판의 경우가 수분 흡수율이 높아 더 오랫동안 전류를 흐르게 하여 방식성이 개선된 것으로 판단된다.을 통해 경도가 증가한 시편의 경우 석출상의 크기가 5nm 이하로 매우 작고 대체로 기지와 연속적인 계면을 형성하나, 열처리가 진행될수록 석 출상의 크기가 커지고 임계크기 이상에 이르면 연속적인 계면은 거의 발견되지 않고, 대부 분 불연속적이고 확연한 계면을 형성함을 관찰 할 수 있었다. 알루미나(${\alpha}-Al_2O_3$) 기판 위에 증착한 $(Ti_{1-x}AI_{x})N$ 피막은 마찬가지로 (200) 우선 방위를 나타내었으나, 그 입자의 크기가 수십 nm로 고속도강위에 증착한 피막에 비해 상당히 크게 형성되었다. 또한 열처리 후에 AIN의 석출이 진행됨에도 불구하고 경도 증가는 나타나지 않고, 열처리가 진행됨에 따라 경도가 감소하는 양상만을 나타내었다. 결국 $(Ti_{1-x}AI_{x})N$ 피막이 열처리 전후에 보아는 기계적 특성의 변화 양상은 열역학적으로 안정한 Wurzite-AlN의 석출에 따른 것으로 AlN 석출상의 크기에 의존하며, 또한 이러한 영향은 $(Ti_{1-x}AI_{x})N$ 피막에 존재하는 AI의 함량이 높고, 초기에 증착된 막의 업자 크기가 작을 수록 클 것으로 여겨진다. 그리고 환경의 의미의 차이에 따라 경관의 미학적 평가가 달라진 것으로 나타났다.corner$적 의도에 의한 경관구성의 일면을 확인할수 있지만 엄밀히 생각하여 보면 이러한 예의 경우도 최락의 총체적인 외형은 마찬가지로 $\ulcorner$순응$\lrcorner$의 범위를 벗어나지 않는다. 그렇기 때문에