• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2004년도 SMICS 2004 International Symposium on Maritime and Communication Sciences
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• pp.53-56
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• 2004

The a-Si:H TFT using ferroelectric of SrTi $O_3$as a gate insulator is fabricated on glass. Dielectric characteristics of ferroelectric are superior to $SiO_2$and S $i_3$ $N_4$. Ferroelctric increases on-current, decreases thresh old voltage of TFT and also improves breakdown characteristics. The a-SiN:H has optical band gap of 2.61 eV, refractive index of 1.8~2.0 and resistivity of 10$^{13}$ - 10$^{15}$ $\Omega$cm, respectively. Insulating characteristics of ferroelectrics are excellent because dielectric constant of ferroelectric is about 60~100 and breakdown strength is over 1MV/cm. TFT using ferroelectric has channel length of 8~20${\mu}{\textrm}{m}$ and channel width of 80~200${\mu}{\textrm}{m}$. And it shows that drain current is 3.4$mutextrm{A}$ at 20 gate voltage, $I_{on}$ / $I_{off}$ is a ratio of 10$^{5}$ - 10$^{8}$ and $V_{th}$ is 4~5 volts, respectively. In the case of TFT without ferroelectric, it indicates that the drain current is 1.5 $mutextrm{A}$ at 20 gate voltage and $V_{th}$ is 5~6 volts. With the improvement of the ferroelectric thin film properties, the performance of TFT using this ferroelectric has advanced as a gate insulator fabrication technology is realized.zed.d.

• 한국전기전자재료학회논문지
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• 제22권10호
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• pp.821-825
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• 2009

Recently, transparent ZnO-based TFTs have attracted much attention for flexible displays because they can be fabricated on plastic substrates at low temperature. We report the fabrication and characteristics of ZnO TFTs having different channel thicknesses deposited at low temperature. The ZnO films were deposited as active channel layer on $Si_3N_4/Ti/SiO_2/p-Si$ substrates by RF magnetron sputtering at $100^{\circ}C$ without additional annealing. Also, the ZnO thin films deposited at oxygen partial pressures of 40%. ZnO TFTs using a bottom-gate configuration were investigated. The $Si_3N_4$ film was deposited as gate insulator by PE-CVD at $150^{\circ}C$. All Processes were processed below $150^{\circ}C$ which is optimal temperature for flexible display and were used dry etching method. The fabricated devices have different threshold slop, field effect mobility and subthreshold slop according to channel thickness. This characteristics are related with ZnO crystal properties analyzed with XRD and SPM. Electrical characteristics of 60 nm ZnO TFT (W/L = $20\;{\mu}m/20\;{\mu}m$) exhibited a field-effect mobility of $0.26\;cm^2/Vs$, a threshold voltage of 8.3 V, a subthreshold slop of 2.2 V/decade, and a $I_{ON/OFF}$ ratio of $7.5\times10^2$.

• 동굴
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• 제34권35호
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• pp.32-42
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• 1993

The Paektu-san mountains are geographically situated in the Korea strait to the north of the main peninsula, coordinated between the longitudes of W(127$^{\circ}$15'~128$^{\circ}$00')and E(128$^{\circ}$15'~129$^{\circ}$00'), and between the latitudes of S(41$^{\circ}$15'~42$^{\circ}$00') and N(42$^{\circ}$10'~42$^{\circ}$40'). The volcanic group of the Paektu-san mountains can be devided into 2 main kinds of volcanos by the method investigation, The ashes are mainly made of tremolite, trachte, basalt and pumice, or, a little quartz, labradorite and volcanic glass. These sorts, ratios and forms of the rocks are respectively similar. The Haeven lake is surrounded by 19 peaks. The central volcanic cone is a secant cone in shape, with an altitude of the 1800m to 2749,2m (Chang-kun-bong), an average diameter of 10km, and a shape of an ellipse seen high from the plane. They say there were several eruptions in 1668, 1700 and 1702 A. D. The crystal structure of the rock sample collected at the cave of Mt. Paektu-san is monoclinic. The quantitative analysis of the rock samples in the cave is done by using XRF this time. The chemical compositions by XRF fundamamental parameter analysis is : SiO$_2$: 50.72Wt%, TiO = 2.422Wt%, $Al_2$O$_3$= 17.65Wt%, Fe$_2$O$_3$= 9.371Wt%, CaO = 8.711Wt%, MgO = 4.l19Wt%, MnO = 0.l15Wt%, $K_2$O = 1.369Wt%, Na$_2$O : 3.028Wt% and P$_2$O$_{5}$ = 0.365Wt%. The K-Ar age of the rock sample is also determined to be 0.16Ma. This paper describes some problems experienced in dating young volcanic rocks, and then discusses chemical compositions, X-ray fluorescence analyses and the age of the formation of a lava tunnel such as in Mt. Paektu-san.n.

• 한국재료학회지
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• 제9권1호
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• pp.86-91
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• 1999

(001) $\textrm{SrTiO}_3$(STO) 기판위에 고온초전도 $\textrm{YBa}_{2}\textrm{Cu}_{3}\textrm{O}_{7-x}$(YBCO)박막을 이용한 계단형 모서리 임계접합을 제조하였다. STO (100) 단결정 기판위에 계단형 모서리(step-edge)를 제작하기 위한 이온밀링 마스크로 plasma enhanced chemical vapor deposition방법으로 증착된 diamond-like carbon (DLC) 박막을 사용하였고, oxygen reactive ion etch 방법으로 건식식각하였다. 이렇게 제작된 계단형 모서리 기판위에 c-축 수직한 YBCO 박막과 STO박막을 pulsed laser deposition방법으로 에피텍셜하게 증착하였다. 계단의 상층과 하층에서 모두 임계가 형성되었으며 이 접합의 임계온도는 77 K 이상이었고 16K에서 $\textrm{I}_{c}\textrm{R}_{n}$products가 7.5mV, 77 K에서 0.3mV의 값을 나타내었다. 이들 전류-전압 특성은 two noisy resistively shunted Josephson junction 모델을 잘 만족하였다.

• 대한치과기공학회지
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• 제30권2호
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• pp.39-45
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• 2008

Titanium and its alloys are widely used as dental implants materials because of their excellent mechanical properties. However, the alumina and zirconia ceramics are preferred to use as the substitute of Ti implants because there is a problems in esthetics and biocompatibility in Ti implant. The the glass infiltrated alumina ceramics are studied to increase the toughness and biocompatibility. The 45S5 and soda-lime glass powder was mixed with ethanol at ratio of 1:1 and brushed on the surface of alumina. Then it was heat treated in the electric furnace at $1400^{\circ}C$ from 30 min. to 5 hours. The glass powder was controlled from 200 to $350{\mu}m$ using ball milling. After heat treatment, the glass infiltrated specimen was tested in universal testing machine to measure the bending strength. The surface microstructure of each specimen was observed with SEM. The biocompatibility of 45S5 and soda-lime glass coated alumina was investigated using PBS at $36.5^{\circ}C$ incubator. The specimen was immersed in PBS for 3, 5, 7, 10 days. After that, the surface morphology was investigated with SEM. As the results of experiment, the 45S5 bioglass infiltrated alumina show the increase of bending strength according to the increasing of heat treatment time from 30 min. to 5 hours at $1400^{\circ}C$ Finally the 1370N bending strength of alumina increased to 1958N at 5 hours heat treatment, which shows 1.4 times higher. In contrast to this, the soda lime glass infiltrated alumina ceramics shows the convex curve according to heat treatment time. Thus it shows maximum bending strength of 1820N at 1 hour heat treatment of $1400^{\circ}C$ It gives 1.3 times higher. However, the bending strength of soda lime glass infiltrated alumina is decreasing with increasing heat treatment time after 1 hour. The precipitation on the surface of 45S5 glass infiltrated alumina was revealed as a sodium phosphate ($Na_{6}P_{6}O_{24}6H_{2}O$) and the amount of precipitation is increasing with increasing of immersion time in PBS. In contrast to this, there is no precipitation are observed on the surface of soda lime glass infiltrated alumina. This implies that 45S5 glass infiltrated alumina brings more biocompatible when it is implanted in human body.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.139-139
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• 2010

금속 실리사이드 나노입자는 열적 및 화학적 안정성이 뛰어나고, 절연막내에 일함수 차이에 따라 깊은 양자 우물구조가 형성되어 비휘발성 메모리 소자를 제작할 수 있다. 그러나 단일 $SiO_2$ 절연막을 사용하였을 경우 저장된 전하의 정보 저장능력 및 쓰기/지우기 시간을 향상시키는 데 물리적 두께에 따른 제한이 따른다. 본 연구에서는 터널장벽 엔지니어링을 통하여 물리적인 두께는 단일 $SiO_2$ 보다는 두꺼우나 쓰기/지우기 동작을 위하여 인가되는 전기장에 의하여 상대적으로 전자가 느끼는 상대적인 터널 절연막 두께를 감소시키는 방법으로 동작속도를 향상 시킨 $SiO_2/Si_3N_4/SiO_2$ 및 $Si_3N_4/SiO_2/Si_3N_4$ 터널 절연막을 사용한 금속 실리사이드 나노입자 비휘발성 메모리를 제조하였다. 제조방법은 우선 p-type 실리콘 웨이퍼 위에 100 nm 두께로 증착된 Poly-Si 층을 형성 한 이후 소스와 드레인 영역을 리소그래피 방법으로 형성시켜 트랜지스터의 채널을 형성한 이후 그 상부에 $SiO_2/Si_3N_4/SiO_2$ (2 nm/ 2 nm/ 3 nm) 및 $Si_3N_4/SiO_2/Si_3N_4$ (2 nm/ 3 nm/ 3 nm)를 화학적 증기 증착(chemical vapor deposition)방법으로 형성 시킨 이후, direct current magnetron sputtering 방법을 이용하여 2~5 nm 두께의 $WSi_2$ 및 $TiSi_2$ 박막을 증착하였으며, 나노입자 형성을 위하여 rapid thermal annealing(RTA) system을 이용하여 $800{\sim}1000^{\circ}C$에서 질소($N_2$) 분위기로 1~5분 동안 열처리를 하였다. 이후 radio frequency magnetron sputtering을 이용하여 $SiO_2$ control oxide layer를 30 nm로 증착한 후, RTA system을 이용하여 $900^{\circ}C$에서 30초 동안 $N_2$ 분위기에서 후 열처리를 하였다. 마지막으로 thermal evaporator system을 이용하여 Al 전극을 200 nm 증착한 이후 리소그래피와 식각 공정을 통하여 채널 폭/길이 $2{\sim}5{\mu}m$인 비휘발성 메모리 소자를 제작하였다. 제작된 비휘발성 메모리 소자는 HP 4156A semiconductor parameter analyzer와 Agilent 81101A pulse generator를 이용하여 전기적 특성을 확인 하였으며, 측정 온도를 $25^{\circ}C$, $85^{\circ}C$, $125^{\circ}C$로 변화시켜가며 제작된 비휘발성 메모리 소자의 열적 안정성에 관하여 연구하였다.

• 센서학회지
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• 제23권5호
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• pp.337-341
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• 2014

For various additives doped-$VO_2$ critical temperature sensors using the nature of semiconductor to metal transition, the crystallinity, microstructure, and temperature vs. resistance characteristics were systematically investigated. As a starting material of $VO_2$ sensor, vanadium pentoxide ($V_2O_5$) powders were used, and CaO, SrO, $Bi_2O_3$, $TiO_2$, and PbO dopants were used, respectively. The $V_2O_5$ powders with dopants were mixed with a vehicle to form paste. This paste was silk screen-printed on $Al_2O_3$ substrates and then $V_2O_5$-based thick films were heat-treated at $500^{\circ}C$ for 2 hours in $N_2$ gas atmosphere for the reduction to $VO_2$. From X-ray diffraction analysis, $VO_2$ phases for pure $VO_2$, and CaO and SrO-doped $VO_2$ thick films were confirmed and their grain sizes were 0.57 to $0.59{\mu}m$. The on/off resistance ratio of the $VO_2$ sensor in phase transition temperature range was $5.3{\times}10^3$ and that of the 0.5 wt.% CaO-doped $VO_2$ sensor was $5.46{\times}10^3$. The presented critical temperature sensors could be commercialized for fire-protection and control systems.

• Bulletin of the Korean Chemical Society
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• 제32권2호
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• pp.559-565
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• 2011

The following noble series of statistical copolymers, poly[(2-(3-thienyl)ethanol n-butoxycarbonylmethylurethane)-co-3-hexylthiophene] (PURET-co-P3HT), were synthesized by the chemical dehydrogenation method using anhydrous $FeCl_3$. The structure and electro-optical properties of these copolymers were characterized using $^1H$-NMR, UV-visible spectroscopy, elemental analysis, GPC, DSC, TGA, photoluminescence (PL), and cyclic voltammetry (CV). The statistical copolymers, PURET-co-P3HT (1:0, 2:1, 1:1, 1:2, 1:3), were soluble in common organic solvents and easily spin coated onto indium-tin oxide (ITO) coated glass substrates. Hybrid bulk heterojunction photovoltaic cells with an ITO/G-PEDOT/PURET-co-P3HT:PCBM:Ag nanowires/$TiO_x$/Al configuration were fabricated, and the photovoltaic cells using PURET-co-P3HT (1:2) showed the best photovoltaic performance compared with those using PURET-co-P3HT (1:0, 2:1, 1:1, 1:3). The optimal hybrid bulk heterojunction photovoltaic cell exhibits a power conversion efficiency (PCE) of 1.58% ($V_{oc}$ = 0.82 V, $J_{sc}$ = 5.58, FF = 0.35) with PURET-co-P3HT (1:2) measured by using an AM 1.5 G irradiation (100 mW/$cm^2$) on an Oriel Xenon solar simulator (Oriel 300 W).

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.216-216
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• 1999

The usage of a stationary plasma thruster (SPT) ion source, invented previously for space application in Russia, in experiments with surface modifications and film deposition systems is reported here. Plasma in the SPT is formed and accelerated in electric discharge taking place in the crossed axial electric and radial magnetic fields. Brief description of the construction of specific model of SPT used in the experiments is presented. With gas flow rate 39ml/min, ion current distributions at several distances from the source are obtained. These was equal to 1~3 mA/$\textrm{cm}^2$ within an ion beam ejection angle of $\pm$20$^{\circ}$with discharge voltage 160V for Ar as a working gas. Such an extremely high ion current density allows us to obtain the Ti metal films with deposition rate of $\AA$/sec by sputtering of Ti target. It is shown a possibility of using of reactive gases in SPT (O2 and N2) along with high purity inert gases used for cathode to prevent the latter contamination. It is shown the SPT can be operated at the discharge and accelerating boltages up to 600V. The results of presented experiments show high promises of the SPT in sputtering and surface modification systems for deposition of oxide thin films on Si or polymer substrates for semiconductor devices, optical coatings and metal corrosion barrier layers. Also, we have been tried to establish in application of the modeling expertise gained in electric and ionic propulsion to permit numerical simulation of additional processing systems. In this mechanism, it will be compared with conventional DC sputtering for film microstructure, chemical composition and crystallographic considerations.

• 한국전기전자재료학회논문지
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• 제21권2호
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• pp.126-130
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• 2008

In this study, in order to develop low loss multilayer piezoelectric actuator, PZN-PZT ceramics were fabricated using $Li_2CO_3,\;Bi_2O_3$, CuO and ZnO as sintering aids, their structural, piezoelectric and dielectric characteristics were investigated according to the amount of ZnO addition, At the sintering temperature of $870^{\circ}C$, the density, electromechanical coupling factor(kp), mechanical quality factor(Qm), dielectric constant(${\epsilon}_r$) and piezoelectric constant($d_{33}$) of 0.4 wt% ZnO added specimen (sintered at $870^{\circ}C$) showed the optimum value of $7.812g/cm^3$, 0.535, 916, 1399, 335 pC/N respectively. Taking into consideration above piezoelectric properties of the specimen sintered at low temperature, it was concluded that PZN-PZT ceramics using 0.4 wt% ZnO as additive showed the optimum characteristics as the composition ceramics for low loss multilayer piezoelectric actuator application.