• Bulletin of the Korean Chemical Society
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• v.23 no.9
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• pp.1229-1258
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• 2002

This paper reports the photochemical reduction of benzil 1 to benzoin 2 and the reduction of 2 to hydrobenzoin 4 in deoxygenated solvents in the presence of triethylamine (TEA) and/or TiO2. Without TEA or TiO2, the photolysis of 1 resulted in very low yield of 2. The presence of TEA or TiO2 increased the rate of disappearance of 1 and the yield of 2, which were further increased considerably by the presence of water. The photoreduction of 1 to 2 proceeds through an electron transfer to 1 from TEA or hole-scavenged excited TiO2 followed by protonation. In the reaction medium of 88 : 7 : 2 : 3 CH3CN/CH3OH/H2O/TEA with 2.5 $㎎/m{\ell}$ of TiO2, the yield of 2 was as high as 85 % at 50 % conversion of 1. The photolysis of 2 in homogeneous media resulted in photo-cleavage to benzoyl and hydroxybenzyl radicals, which are mostly converted to benzaldehyde. The reduction product 4 is formed in low yield through the dimerization of hydroxybenzyl radicals. The addition of TEA increased the conversion rate of 2 and the yield of 4 significantly. This was attributed to the scavenging effect of TEA for benzoyl radical to produce N,N-diethylbenzamide and the photoreduction of benzaldehyde in the presence of TEA. The ratio of $(\pm)$ and meso isomers of 4 obtained from the photochemical reaction is about 1.1. This ratio is the same as that from the photochemical reduction of benzaldehyde in the presence of TEA. In the TiO2-sensitized photochemical reduction of 2, meso-4 was obtained in moderate yield. The reduction of 2 to 4 proceeds through two consecutive electron/proton transfer processes on the surface of the photocatalyst without involvement of ${\alpha}-cleavage$. The radical 11 initially formed from 2 by one electron/proton process can also combine with hydroxy methyl radical, which is generated after hole trapping of excited TiO2 by methanol, to produce 1,2-diphenylpropenone after dehydration reaction.

• Korean Journal of Materials Research
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• v.16 no.3
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• pp.168-172
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• 2006

Single pulse of 2.0 to 3.5 kJ from $150{\mu}F$ capacitor was applied to the cp Ti rod for its surface modification and heat treatment. Under the conditions of using 2.0 and 2.5 kJ of input energy, no phase transformation has been occurred. However, the hardness and tensile strength decreased and the elongation increased after a discharge due to a slight grain growth. By using more than 3.0 kJ of input energy, the electro discharge made a phase transformation and the hardness at the edge of the cross section increased significantly. The Ti rod before a discharge was lightly oxidized and was primarily in the form of $TiO_2$. However, the surface of the Ti rod has been instantaneously modified by a discharge into the main form of TiN from $TiO_2$. Therefore, the electro discharge can modify its surface chemistry in times as short as $200{\mu}sec$ by manipulating the input energy, capacitance, and discharging environment.

• Korean Journal of Materials Research
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• v.6 no.12
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• pp.1221-1232
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• 1996

용접부 인성을 향상시키기 위해 Ti 산화물을 첨가한 Ti 산화물강에 대하여 용접시 최고가 열온도와 냉각속도의 변화가 용접열영향부의 미세조직에 미치는 영향을 조사하였다. 용접열영향부의 인성향상에 기여하는 acicular ferrite는 140$0^{\circ}C$ 이상의 최고가열온도와 $\Delta$t800-500가 40초보다 빠른 냉각속도에서 활발해 생성되었다. 오스테나이트 결정립내에서 개재물로부터 핵생성된 일차 acicular ferite의 생성량은 전체 aicular ferrite의 약 20% 정도로 적었으며 대부분의 acicular ferrite는 일차 acicular ferrite로부터 생성된 이차 acicular ferrite인 것으로 나타났다. 이차 acicular ferrite는 plate사이에 Fe3C층이 존재하는 것으로 보아 확산기구에 의해 생성되는 것으로 생각된다. 개재물은 TiO, TiO2, TiN, MnS, AI2O3 MnO(galaxite)등으로 구성된 복합상이었으며 개재물이 일차 acicular ferrite의 핵생성 site로 작용하기 위해서는 약 1$\mu\textrm{m}$이상의 크기가 효과적인 것으로 나타났다. Ti 산화물과 TiN는 직접적인 acicular ferrite의 핵생성 site로 작용하기보다는 MnS, galaxite 등의 석출 site로 작용하여 개재물의 크기를 증가시킴으로써 acicular ferrite의 생성을 촉진시키는 것으로 생각된다.

• Korean Journal of Crystallography
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• v.14 no.2
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• pp.105-109
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• 2003

Electrical properties of Ni/Au/p-GaN and optical properties of epitaxial GaN MQW LED on sapphire were characterized. At 20 mA forward bias, GaN MQW emitted in the blue at 470 nm. Current-voltage (I-V) characteristics were decreased linearly with the annealing temperature. The resistivity of Ni/Au contacts was found by TLM measurements to be of device quality (2×10/sup -1/Ωㆍcm).

• Electrical & Electronic Materials
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• v.5 no.2
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• pp.198-206
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• 1992

(P $b_{1-x}$L $a_{x}$)[(S $b_{1}$2/S $n_{1}$2/) $Ti_{y}$ Z $r_{1-y}$] $O_{3}$(0.leq.x.leq.0.04, 0.25.leq.y.leq.0.40) 세라믹을 1250[.deg.C]에서 2시간동안 유지시켜 일반 소성법으로 제작하였으며 조성 및 L $a_{2}$ $O_{3}$첨가량에 따른 구조적, 압전적 특성을 관찰하였다. L $a_{2}$ $O_{3}$의 첨가량이 3-4[mol%]인 경우 La-rich의 pyrochlore상이 형성되었다. 시편의 평균결정립 크기는 1-2[.mu.n]의 크기를 나타내었으며 PbTi $O_{3}$조성이 증가함에 따라 다소 감소하는 경향을 나타내었다. 각 조성의 시편에 대해 PbTi $O_{3}$ 및 L $a_{2}$ $O_{3}$의 첨가량이 증가할수록 유전상수는 증가하는 경향을 나타내었으며 상전이 온도인 큐리온도는 PbTi $O_{3}$조성이 감소할수록 L $a_{2}$ $O_{3}$첨가량이 증가할수록 감소하는 경향을 나타내었다. 압전 전하계수 및 전기기계 결합계수는 L $a_{2}$ $O_{3}$첨가량 및 PbTi $O_{3}$조성에 따라 증가하였으며 L $a_{2}$ $O_{3}$가 4[mol%]첨가된 0.10PSS-0.40PT-0.50PZ 시편에서 각각 250x$10^{-12}$[C/N], 29.7[%]의 최대값을 나타내었다. 기계적 품질계수는 L $a_{2}$ $O_{3}$첨가량 및 PbTi $O_{3}$조성이 증가할수록 감소하는 경향을 나타내었으며 0.10PSS-0.25PT-0.65PZ 시편에서 138의 최대값을 나타내었다.다.

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.296.2-296.2
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• 2008

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.5
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• pp.175-181
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• 2005

Ingots of rutile single crystals were grown by the skull melting method, and their characteristics were compared in terms of melt-dwelling time for each melt. The method is based on direct inductive heating of an electrically conducted melt by an alternating RF field, and the heating is performed by absorption of RF energy. $TiO_2$ is an insulator at room temperature but its electric conductivity increases elevated temperature. Therefore, titanium metal ring(outside diameter : 6cm, inside diameter : 4cm, thickness 0.2cm) was embedded into $TiO_2$, powder (anatase phase, CERAC, 3N) for initial RF induction heating. Important factors of the skull melting method are electric resistivity of materials at their melting point, working frequency of RF generator and cold crucible size. In this study, electric resitivity of $TiO_2$, $(10^{-2}\~10^{-1}\;{\Omega}{\cdot}m)$ at its melting point was estimated by compairing the electric resitivities of alumina and zirconia. Inner diameter and height of the cold crucible was 11 and 14cm, respectively, which were determined by considering of the Penetration depth $(0.36\~1.13cm)$ and the frequency of RF generator.

• Bulletin of the Korean Chemical Society
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• v.26 no.8
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• pp.1214-1218
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• 2005

Ti-HMS samples in which titanium species exist in various forms of isolated tetrahedral state, finely dispersed $TiO_2$ cluster, and some in extra-framework anatase phase were prepared via a direct synthesis route using dodecylamine (DDS) as a structure directing agent by systematically varying the titanium loadings between 2 and 50 mol% Ti/(Ti+Si) in substrate composition. Physicochemical properties of the materials were evaluated using XRD, SEM/TEM, N2 adsorption, UV-vis and XANES spectroscopies. Catalytic properties of Ti-HMS in cyclohexene and 2,6-di-tert-butyl phenol (2,6-DTBP) oxidation using aqueous $H_2O_2$, and vapor phase photocatalytic degradation of acetaldehyde were evaluated. High $H_2O_2$ selectivity was obtained in cyclohexene oxidation, and cyclohexene conversion was found primarily dependent on the amount of tetrahedrally coordinated Ti sites. For bulky 2,6-DTBP oxidation and photocatalytic oxidation of acetaldehyde, on the other hand, conversions were found dependent on the total amount of Ti sites and maintaining an uniform mesoporous structure in the catalysts was not critical for efficient catalysis.

• Transactions of Materials Processing
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• v.31 no.4
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• pp.179-185
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• 2022

The influence of post-roll bonding heat treatment conditions such as temperature and time on the variation in the diffusion layer, generated at the bonding interface and the subsequent mechanical properties of the roll-bonded Ti grade 1/Al1050/Ti grade 1 sheets, was systematically investigated. The intermetallic compound (IMC) phase generated by post heat treatment conditions adopted in this study was obviously indexed as monolithic TiAl₃. Whereas the thickness of IMC layer generated by annealing at 500 ℃ was approximately 100 nm scale, it drastically increased above 1.5 ㎛ when annealed at 600 ℃. Uniaxial tensile and peel tests were then performed to compare mechanical properties. As a result, the bonding strength drastically increased above 7.9 N/mm by annealing at 600 ℃, which implies that proper annealing condition was a prerequisite, to improving interface bonding strength as well as global elongation properties for Ti/Al/Ti 3-ply sheet.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.115-116
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• 2012

The demand for flexible electronic systems such as wearable computers, E-paper, and flexible displays has increased due to their advantages of excellent portability, conformal contact with curved surfaces, light weight, and human friendly interfaces over present rigid electronic systems. This seminar introduces three recent progresses that can extend the application of high performance flexible inorganic electronics. The first part of this seminar will introduce a RRAM with a one transistor-one memristor (1T-1M) arrays on flexible substrates. Flexible memory is an essential part of electronics for data processing, storage, and radio frequency (RF) communication and thus a key element to realize such flexible electronic systems. Although several emerging memory technologies, including resistive switching memory, have been proposed, the cell-to-cell interference issue has to be overcome for flexible and high performance nonvolatile memory applications. The cell-to-cell interference between neighbouring memory cells occurs due to leakage current paths through adjacent low resistance state cells and induces not only unnecessary power consumption but also a misreading problem, a fatal obstacle in memory operation. To fabricate a fully functional flexible memory and prevent these unwanted effects, we integrated high performance flexible single crystal silicon transistors with an amorphous titanium oxide (a-TiO2) based memristor to control the logic state of memory. The $8{\times}8$ NOR type 1T-1M RRAM demonstrated the first random access memory operation on flexible substrates by controlling each memory unit cell independently. The second part of the seminar will discuss the flexible GaN LED on LCP substrates for implantable biosensor. Inorganic III-V light emitting diodes (LEDs) have superior characteristics, such as long-term stability, high efficiency, and strong brightness compared to conventional incandescent lamps and OLED. However, due to the brittle property of bulk inorganic semiconductor materials, III-V LED limits its applications in the field of high performance flexible electronics. This seminar introduces the first flexible and implantable GaN LED on plastic substrates that is transferred from bulk GaN on Si substrates. The superb properties of the flexible GaN thin film in terms of its wide band gap and high efficiency enable the dramatic extension of not only consumer electronic applications but also the biosensing scale. The flexible white LEDs are demonstrated for the feasibility of using a white light source for future flexible BLU devices. Finally a water-resist and a biocompatible PTFE-coated flexible LED biosensor can detect PSA at a detection limit of 1 ng/mL. These results show that the nitride-based flexible LED can be used as the future flexible display technology and a type of implantable LED biosensor for a therapy tool. The final part of this seminar will introduce a highly efficient and printable BaTiO3 thin film nanogenerator on plastic substrates. Energy harvesting technologies converting external biomechanical energy sources (such as heart beat, blood flow, muscle stretching and animal movements) into electrical energy is recently a highly demanding issue in the materials science community. Herein, we describe procedure suitable for generating and printing a lead-free microstructured BaTiO3 thin film nanogenerator on plastic substrates to overcome limitations appeared in conventional flexible ferroelectric devices. Flexible BaTiO3 thin film nanogenerator was fabricated and the piezoelectric properties and mechanically stability of ferroelectric devices were characterized. From the results, we demonstrate the highly efficient and stable performance of BaTiO3 thin film nanogenerator.