• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2002.11a
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• pp.8-8
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• 2002

TiC core/(Ti,Mo)C rim structure in TiC-$Mo_2C$-Ni base cermet which is generally prepared by sintering below 145$0^{\circ}C$ had been believed to be generated by the solid diffusion of Mo atoms 1 into TiC grains (D. Moskowitz and M.Humenik, 1r.:1966). Afterward, it was clarified that the c core/rim structure is generated by solution/re-precipitation mechanism : (1) $Mo_2C$ grains and s small TiC grains dissolve into the Ni liquid, (2) the dissolved Mo, Ti and C atoms migrate to the s surface of TiC coarse grains, (3) the Mo, Ti and C precipitate on the surface of TiC coarse g grains and form (Ti,Mo)C solid solution rim, and (4) the Ostwald ripening (grain growth by s solution/re-precipitation mechanism) of TiC-core/(Ti,Mo)-rim grains continues, and thus the w width of (Ti,Mo)C rim (at the same time, the grain size) increases with sintering time, etc. ( (H.Suzuki, K.Hayashi and O.Terada: 1973). The TiC-core was found not to disappear even by s sintering at 190$0^{\circ}C$ (ibid.: 1974) Recently, FeSi core/$Fe_2Si_5$-rim structure in Fe-66.7at%Si thermoelectric aIloy was found to also h hardly shrink and disappear by long heating at an appropriate temperature (1999: M.Tajima and K K.hayashD. Then, the authors considered its cause, and clarified experimentaIly that the disappearance of FeSi-core/$Fe_2Ski_5$-rim structure could be attributed to the exhaustion of diffusion-contributable vacancies in core/rim structure (N.Taniguchi and K.Hayashi:2001). At p present, the authors and my coworker are investigating whether the non-disappearance of TiC c core can be explained also from the new hypothesis "Exhaustion of diffusion-contributable v vacancies in corelrim structure".ure".uot;.

• Electrical & Electronic Materials
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• v.9 no.5
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• pp.439-444
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• 1996

0.15(B $a_{0.95}$ S $r_{0.05}$)O-0.15(S $m_{2(1-x}$/N $d_{2x}$) $O_{3}$-0.7Ti $O_{2}$(x=0-10[m/o]) ceramics were fabricated by mixed oxide method. Microwave dielectric properties were investigated with contents of N $d_{2}$ $O_{3}$. In the case of specimen with N $d_{2}$ $O_{3}$(6[m/o]), dielectric constant, quality factor and temperature coefficient of resonant frequency were 78.14, 2938(at 3[GHz]) and +14.19[ppm/.deg. C], respectively. By comparison its properties with undoped specimen, dielectric constant and quality factor were highly improved, but the temperature coefficient of resonant frequency was increased to positive value......

• Bulletin of the Korean Chemical Society
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• v.29 no.3
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• pp.609-614
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• 2008

A periodic mesoporous organosilica material was synthesized by microwave heating (PMO-M) using 1,2-bis(trimethoxysilyl)ethane as a precursor in a cationic surfactant solution, and textural properties were compared with those of the product produced by conventional convection heating (PMO-C). These synthesized materials were characterized using XRD, TEM/SEM, N2 adsorption isotherm, 29Si and 13C NMR, and TGA, which confirmed their good structural orders and clear arrangements of uniform 3D-channels. Synthesis time was reduced from 21 h in PMO-C to 2-4 h in PMO-M. PMO-M was made of spherical particles of 1.5-2.2 m m size, whereas PMO-C was made of decaoctahedron-shaped particles of ca. 8.0 m m size. Effect of synthesis temperature, time, and heating mode on the PMO particle morphology was examined. The particle size of PMO-M could be controlled by changing the heating rate by adjusting microwave power level. PMO-M demonstrated improved separation of selected organic compounds compared to PMO-C in a reversed phase HPLC experiment. Ti-grafted PMO-M also resulted in higher conversion in liquid phase cyclohexene epoxidation than by Ti-PMO-C.

• Bulletin of the Korean Chemical Society
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• v.28 no.7
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• pp.1097-1103
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• 2007

We report a novel method to synthesize nanocomposites composed of titania nanoparticles and phosphotungstate ions with various composition ratios ranging from W/Ti = 12/10 to 12/500 by inducing the electrostatic interaction between the positively charged protonated titania sol-particles and the negatively charged phosphotungstate anions to flocculate and precipitate. The precipitates showed varied features depending on the composition. The precipitate from the tungsten-richest W/Ti = 12/10 reaction is amorphous in its powder X-ray diffraction (XRD), transmission electron microscopy (TEM), and Raman spectroscopy data. This material shows the Type II adsorption characteristics in its N2-adsorption isotherm, but with quite low surface area of 34 m2/g. To the contrary, the precipitates from the titanium-richer reactions (W/Ti = 12/50- 12/500) are composed of anatase nanoparticles of 2-6 nm by XRD, TEM and Raman and show the Type I adsorption characteristics. The surface area linearly increases with the titanium content from 131 m2/g for W/ Ti = 12/50 to 228 m2/g for 12/500. The precipitate from the reaction with the intermediate composition W/Ti = 12/20 is composed of anatase nanoparticles and does not have any pore accessible to N2. With the wide variety of the physical properties of the precipitates, the present method can be a novel, viable means to tailor synthesis of nanocomposite materials. A formation mechanism of the precipitates is based on the electrostatic interactions between the titania nanoparticles and phosphotungstate ions.

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.563-575
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• 2006

Ti(C,N) films are synthesized by pulsed DC plasma enhanced chemical vapor deposition (PEMOCVD) using metal-organic compounds of tetrakis diethylamide titanium at $200-300^{\circ}C$. To compare plasma parameter, in this study, $H_2$ and $He/H_2$ gases are used as carrier gas. The effect of $N_2\;and\;NH_3$ gases as reactive gas is also evaluated in reduction of C content of the films. Radical formation and ionization behaviors in plasma are analyzed in-situ by optical emission spectroscopy (OES) at various pulsed bias voltages and gas species. He and $H_2$ mixture is very effective in enhancing ionization of radicals, especially for the $N_2$. Ammonia $(NH_3)$ gas also highly reduces the formation of CN radical, thereby decreasing C content of Ti(C, N) films in a great deal. The microhardness of film is obtained to be $1,250\;Hk_{0.01}\;to\;1,760\;Hk_{0.01}$ depending on gas species and bias voltage. Higher hardness can be obtained under the conditions of $H_2\;and\;N_2$ gases as well as bias voltage of 600 V. Hf(C, N) films were also obtained by pulsed DC PEMOCYB from tetrakis diethyl-amide hafnium and $N_2/He-H_2$ mixture. The depositions were carried out at temperature of below $300^{\circ}C$, total chamber pressure of 1 Torr and varying the deposition parameters. Influences of the nitrogen contents in the plasma decreased the growth rate and attributed to amorphous components, to the high carbon content of the film. In XRD analysis the domain lattice plain was (111) direction and the maximum microhardness was observed to be $2,460\;Hk_{0.025}$ for a Hf(C,N) film grown under -600 V and 0.1 flow rate of nitrogen. The optical emission spectra measured during PEMOCVD processes of Hf(C, N) film growth were also discussed. $N_2,\;N_2^+$, H, He, CH, CN radicals and metal species(Hf) were detected and CH, CN radicals that make an important role of total PEMOCVD process increased carbon content.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.274-275
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• 2006

The sintering behavior of titanium-titanium nitride nanocomposite powders has been studied by dilatometry. Titanium. titanium nitride nanocomposite powders were produced by the reactive milling of micron sized titanium powder $(12\;{\mu}m)$ in nitrogen atmosphere. The Ti-TiN nanocomposite powders milled for various durations along with the initial micron sized Ti powders were then sintered in the temperature range of $450-1000^{\circ}C$ by a constant rate of heating $(10^{\circ}C/min)$. The linear shrinkage, shrinkage rate, activation energy for sintering and microstructure has been studied and discussed as a function of milling time.

• Korean Journal of Materials Research
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• v.8 no.4
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• pp.288-292
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• 1998

The p*-n ultra shallow junction diode with Co/Ti bilayer silicide was formed by ion implantation of $BF_{2}$ energy : 30KeV, dose : $5\times10^{15}cm^{-2}$] onto the n-well Si(100) region and RTA-silicidation of the evaporated Co($120\AA$)/Ti($40\AA$) double layer. The fabricated diode exhibited ideality factor of 1.06, specific contact resistance of $1.2\times10^{-6}\Omega\cdot\textrm{cm}^2$ and leakage current of $8.6\muA/\textrm{cm}^2$(-3V) under the reverse bias of 3V. The sheet resistance of silicided emitter region, the boron concentration at silicide/Si interface and the junction depth including silicide layer of ($500\AA$ were about $8\Omega\Box$, $6\times10^{19}cm^{-3}$, and $0.14\mu{m}$, respectively. In the fabrication of diode, the application of Co/Ti bilayer silicide brought improvement of ideality factor on the current-voltage characteristics as well as reduction of emitter sheet resistance and specific contact resistance, while it led to a little increase of leakage current.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.77.1-77.1
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• 2007

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.11a
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• pp.31-32
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• 2001

Recently, many of the current development in surface modification engineering are focused on multilayered coatings. Multilayered coatings have the potential to improve the tribological and corrosion properties of tools and components. By using cathodic arc deposition, $WC-Ti_{1-x}Al_xN$ multilayers were deposited on steel substrates. Wear tests of four multiplayer coatings were performed using a ball-on-disc configuration with a linear sliding speed of 0.1m/s, 5N load. The tests were carried out at room temperature in airby employing AISI 52100 steel ball ($H_v=848N$) of 11mm in diameter. Electrochemical tests were performed using the potentiodynamic and electrochemical impedance spectroscopy (EIS) measurements. The surface morphology and topography of the wear scars of tribo-element and the corroded specimen have been determined by using scanning electron spectroscopy (SEM). Also, wear mechanism was determined by using SEM coupled with EDS. Results have showed an improved wear resistance and corrosion resistance of the $WC-Ti_{1-x}Al_xN$ coatings.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.83-83
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• 1999

본 연구에서는 Auger Elecrtron Spectroscopy (AES) 장비를 이용하여 Silicone Wafer 표면에 BF 이온을 주입시킨 후 Dopping 농도 및 Implantation 에너지에 따른 Si KLL Peak의 변화를 관찰하였다. 또한 PVD Ti 계열 화학물의 시료에 대하여 Peak의 Shape 변화를 관찰하였다. 1)Dopping 농도 및 Implantation 에너지에 따른 Si KLL Peak의 변화 관찰 일반적으로 Silicone 기판에 Arsenic(3가)을 Dopping 하였을 경우, Si KLL Peak의 Kinetic Energy 값은 순수 Si Peak보다 더 작은 값으로 Shift 하며, Boron (5가)을 Dopping하였을 경우에는 더 큰 값으로 Shift 한다. 이론적으로 N-type Si의 에너지 차이는 약 1.0eV로 보고되어 있으며, AES를 이용하여 실험적으로 측정된 값은 약 0.6eV정도로 알려져 있다. 이러한 차이는 Dopping 농도에 따라 Valance Band의 에너지 값이 변화하기 때문이라고 알려져 있다. 본 연구에서는 BF2를 Si에 이온 주입하여 입사 에너지 및 dose 량에 따른 Si KLL Peak의 변화를 관찰하였다. 그림1과 같이 Si KLL Peak는 Implantation Energy가 작을수록 Kinetic Energy가 높은 곳으로 Shift 한다. 이는 LOw Energy로 이온 주입하면, Projected Range (Rp)가 High Energy로 이온 주입할 때보다 작기 때문이며, 이 결과를 Secondary Ion Mass Spectroscopy (SIMS) 및 TRIM simulation을 이용하여 확인하였다. 또한 표면에서의 전자 Density의 변화와 Implantation energy와의 관계를 시료의 표면에서 반사되어 나오는 전자의 에너지 손실(Reflected Electron Energy Loss Spectroscopy:REELS)을 통하여 고찰하였다. 2) PVD Ti 계열화합물의 시료에 대한 peak의 shape 가 변화하며, TiL3M23V (Ti2) 및 TiL3M23M23 (Til) Peak의 Intensity Ratio가 변화한다. 따라서 본 연구에서는 그림 2와 같이 Ti 결합 화합물에서의 Ti Auger Peak의 특성 에너지 값과 Peak Shape를 관찰하여, AES를 이용하여 Ti 계열의 화합물에 대한 Chemical state 분석의 가능성을 평가하였다.