• Title/Summary/Keyword: TiN and ZrN film

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Antibacterial Properties of TiAgN and ZrAgN Thin Film Coated by Physical Vapor Deposition for Medical Applications

  • Kang, Byeong-Mo;Lim, Yeong-Seog;Jeong, Woon-Jo;Kang, Byung-Woo;Ahn, Ho-Geun
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.5
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    • pp.275-278
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    • 2014
  • We deposited TiAgN and ZrAgN nanocomposite coatings on pure Titanium specimens, by using arc ion plating (AIP) with single alloy targets. TiAg ZrAg alloy targets of 5 wt.%, 10 wt.% silver content by vacuum arc remelting (VAR), followed by homogenization for 2 hours at $1,100^{\circ}C$ in non-active Ar gas atmosphere and characterized these samples for morphology and chemical composition. We investigated the biocompatibility of TiAg and ZrAg alloys by examining the proliferation of L929 fibroblast cells by MTT test assay, after culturing the cells ($4{\times}10^4cells/cm^2$) for 24 hours; and exploring the antibacterial properties of thin films by culturing Streptococus Mutans (KCTC3065), using paper disk techniques. Our results showed no cytotoxic effects in any of the specimens, but the antibacterial effects against Streptococus Mutans appeared only in the 10 wt.% silver content specimens.

Deposition of (Ti, Cr, Zr)N-$MoS_{2}$ Thin Films by D.C. Magnetron Sputtering

  • Kim, Sun-Kyu;Vinh, Pham-Van
    • Journal of the Korean institute of surface engineering
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    • v.39 no.6
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    • pp.263-267
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    • 2006
  • As technology advances, there is a demand for development of hard solid lubricant coating. (Ti, Cr, Zr)N-$MoS_2$ films were deposited on AISI H13 tool steel substrate by co-deposition of $MoS_2$ with (Ti, Cr, Zr)N using a D.C. magnetron sputtering process. The influence of the $N_2Ar$ gas ratio, the amount of $MoS_2$ in the films and the bias voltage on the mechanical and structural properties of the films were investigated. The highest hardness level was observed at the $N_2/Ar$ gas ratio of 0.3. Hardness of the films did not change much with the increase of the $MoS_2$ content in the films. As the substrate bias potential was increased, hardness level of the film reached maximum at -150 V. Surface morphology of these films indicated that high hardness was attributed to the fine dome structure.

A Review of Epitaxial Metal-Nitride Films by Polymer-Assisted Deposition

  • Luo, Hongmei;Wang, Haiyan;Zou, Guifu;Bauer, Eve;Mccleskey, Thomas M.;Burrell, Anthony K.;Jia, Quanxi
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.2
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    • pp.54-60
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    • 2010
  • Polymer-assisted deposition is a chemical solution route to high quality thin films. In this process, the polymer controls the viscosity and binds metal ions, resulting in a homogeneous distribution of metal precursors in the solution and the formation of crack-free and uniform films after thermal treatment. We review our recent effort to epitaxially grow metal-nitride thin films, such as hexagonal GaN, cubic TiN, AlN, NbN, and VN, mixed-nitride $Ti_{1-x}Al_xN$, ternary nitrides tetragonal $SrTiN_2$, $BaZrN_2$, and $BaHfN_2$, hexagonal $FeMoN_2$, and nanocomposite TiN-$BaZrN_2$.

Manufacture and properties of Thick Film Ferroelectric PTC Thermistor (강유전성 후막 PTC 서미스터의 제조 및물성)

  • 구본급
    • Journal of the Microelectronics and Packaging Society
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    • v.5 no.1
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    • pp.63-72
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    • 1998
  • 후막 PTC를 제조하기 위하여 BaTiO3 주원료에 Sb2O3와 MnO2를 첨가한 PTC 페이 스트를 ZrO2와 BaTiO3 기판위에 인쇄한후 13$25^{\circ}C$에서 1시간 동안 소결하였다. BaTiO3 기판 위에 형성된 PTC후막은 PTCR 특성을 나타내었다. 그러나 ZrO2기판위에 인쇄된 시편의 경 우 PTCR특성이 나타나지 않았다. 이것은 ZrO2기판과 인쇄된 PTC페이스트간의 열팽창계수 차이에 의한 thermal cracking 때문에 후막 PTC 형성이 불가능함을 보여주었다.

The electric properties of PZT thick film by pressure variation (프레스 압력 변화에 따른 PZT 후막의 전기적 특성)

  • Kang, Jeong-Min;Cho, Hyun-Moo;Lee, Sung-Gap;Lee, Sang-Heon;Park, Sang-Man
    • Proceedings of the KIEE Conference
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    • 2004.11a
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    • pp.177-179
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    • 2004
  • $Pb(Zr_{0.4},Ti_{0.6})O3$, $Pb(Zr_{0.6},Ti_{0.4})O_3$ powder were prepared by the sol-gel method using a solution of Pb-acetate, Zr n-propoxide and Ti iso-propoxide. PZT thick film were fabricated by the screen printing method, and the structural and ferroelectric properties asafunting of the sintering temperature were studied. PZT film thickness, obtained by four screen printing, was approximately $100{\sim}120{\mu}m$. The relative dielectric constant and the dielectric loss of the PZT thick film sintered at $1050^{\circ}C$ were approximately 676 and 1.4%, respectively.

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The Structural properties of PZT thick film with preparation condition states (제작조건에 따른 PZT후막의 구조적 특성)

  • Kang, Jung-Min;Cho, Hyun-Moo;Lee, Sung-Gap;Lee, Sang-Heon;Lee, Young-Hie;Bae, Seon-Gi
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.142-145
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    • 2004
  • [ $Pb(Zr_{0.8}Ti_{0.2})TiO_3$ ] powder were prepared by the sol-gel method using a solution of Pb-acetate, Zr n-propoxide and Ti iso-propoxide. PZT thick film were fabricated by the screen printing method. and then the structural properties as a function of the sintering temperature were studied. PZT film thickness, obtained by four screen printing, was approximately $70{\sim}90{\mu}m$. The PZT thick film, sintered at $1050^{\circ}C$, showed deuse and uniform grain stractures and percent porosity of the thick film was 25.43%.

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Ion assisted deposition of $TiO_2$, $ZrO_2$ and $SiO_xN_y$ optical thin films

  • Cho, H.J.;Hwangbo, C.K.
    • Journal of the Korean Vacuum Society
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    • v.6 no.S1
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    • pp.75-79
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    • 1997
  • Optical and mechanical characteristics of $TiO-2, ZrO_2 \;and\; SiO_xN_y$ thin films prepared by ion assisted deposition (IAD) were investigated. IAD films were bombarded by Ar or nitrogen ion beam from a Kaufman ion source while they were grown in as e-beam evaporator. The result shows that the Ae IAD increases the refractive index and packing density of $TiO_2 films close to those of the bulk. For $ZrO_2$ films the Ar IAD increases the average refractive index decreases the negative inhomogeneity of refractive index and reverses to the positive inhomogeneity. The optical properties result from improved packing density and denser outer layer next to air The Ar-ion bombardment also induces the changes in microstructure of $ZrO_2$ films such as the preferred (111) orientation of cubic phase increase in compressive stress and reduction of surface roughness. Inhomogeneous refractive index SiOxNy films were also prepared by nitrogen IAD and variable refractive index of $SiO_xN_y$ film was applied to fabricate a rugate filter.

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Synthesis of Zr-incorporated TiO2 Using a Solvothermal Method and its Photovoltaic Efficiency on Dye-sensitized Solar Cells

  • Kim, Su-Jung;Kang, Mi-Sook
    • Bulletin of the Korean Chemical Society
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    • v.32 no.9
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    • pp.3317-3322
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    • 2011
  • This study examines the photoelectric conversion efficiency of dye-sensitized solar cells (DSSCs) when nanometer-sized Zr (0.1, 0.5, and 1.0 mol %)-$TiO_2$ prepared using a solvothermal method is utilized as the working electrode material. The particle sizes observe in the transmission electron microscopy (TEM) images are < 30 nm in all samples. The absorption band is slightly broadened at the tail for the 0.1 mol % Zr-$TiO_2$, and the intensity of the photoluminescence (PL) curves of the Zr-incorporated $TiO_2$ is significantly smaller than that of the pure $TiO_2$. Compared to that using pure $TiO_2$, the energy conversion efficiency is enhanced considerably by the application of Zr-$TiO_2$ in the DSSCs to approximately 6.17% for 0.5 mol % Zr-$TiO_2$ with the N719 dye (10.0 ${\mu}m$ film thickness and 5.0 mm ${\times}$ 5.0 mm cell area) under 100 mW/$cm^2$ of simulated sunlight.

Fabrication and Hydrogen Separation Performance of Newly Created Ti-Based Alloy Membrane (신조성의 Ti-기반 합금 수소분리막의 설계 및 수소투과 성능)

  • Min Yeong Ko;Min Chang Shin;Xuelong Zhuang;Jae Yeon Hwang;Sung Woo Han;Si Eun Kim;Jung Hoon Park
    • Membrane Journal
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    • v.34 no.2
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    • pp.146-153
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    • 2024
  • In this experiment, a Ti-based flat hydrogen separation membrane was designed and manufactured. In order to find a Ti-based hydrogen separation membrane of a new composition, the correlation between the physical-chemical properties and hydrogen permeability of various alloys was investigated. Based on this, two types of new alloy films (Ti14.2Zr66.4Ni12.6Cu6.8 (70 ㎛), Ti17.3Zr62.7Ni20 (80 ㎛)) was designed and manufactured. The manufactured flat hydrogen separation membrane was tested for hydrogen permeation using mixed gas (H2, N2) and sweep gas (Ar) at 300~500℃ and 1~4 bar. The Ti14.2Zr66.4Ni12.6Cu6.8 alloy film has a maximum flux of 16.35 mL/cm2 min at 500℃ and 4 bar, and the Ti17.3Zr62.7Ni20 alloy film has a maximum flux of 10.28 mL/cm2 min at 450℃ and 4 bar.

Effects of Plasma-Nitriding on the Pitting Corrosion of Fe-30at%Al-5at%Cr Alloy (Fe-30at.%Al-5at.%Cr계 합금의 공식특성에 미치는 플라즈마질화의 영향)

  • 최한철
    • Journal of the Korean institute of surface engineering
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    • v.36 no.6
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    • pp.480-490
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    • 2003
  • Effects of plasma-nitriding on the pitting corrosion of Fe-30at%Al-5at%Cr alloy containing Ti, Hf, and Zr were investigated using potentiostat in 0.1M HCl. The specimen was casted by the vacuum arc melting. The subsequent homogenization was carried out in Ar gas atmosphere at $1000^{\circ}C$ for 7days and phase stabilizing heat treatment was carried out in Ar gas atmosphere at $500^{\circ}C$ for 5 days. The specimen was nitrided in the $N_2$, and $H_2$, (1:1) mixed gas of $10^{-4}$ torr at $480^{\circ}C$ for 10 hrs. After the corrosion tests, the surface of the tested specimens were observed by the optical microscopy and scanning electron microscopy(SEM). For Fe-30at%Al-5Cr alloy, the addition of Hf has equi-axied structure and addition of Zr showed dendritic structure. For Fe-30at%Al-5Cr alloy containing Ti, plasma nitriding proved beneficial to decrease the pitting corrosion attack by increasing pitting potential due to formation of TiN film. Addition of Hf and Zr resulted in a higher activation current density and also a lower pitting potential. These results indicated the role of dendritic structure in decreasing the pitting corrosion resistance of Fe-30Al-5Cr alloy. Ti addition to Fe-30Al-5Cr decreased the number and size of pits. In the case of Zr and Hf addition, the pits nucleated remarkably at dendritic branches.