• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 추계총회 및 연구발표회 초록집
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• pp.210.1-210
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• 2003

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2003년도 춘계학술강연 및 발표대회
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• pp.42-42
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• 2003

• 열처리공학회지
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• 제22권6호
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• pp.368-374
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• 2009

Nickel titanium shape memory alloys (NiTi) have been investigated for applications in the biomedical industry. However, little is known about the influences of surface modifications on the propertise of these alloys. The effect of electropolishing and heat treatments was found to exhibit significant surface roughness. Change of phase was B2, r-phase and B19' by heat treatments. In this study, effect of the electropolishing conditions on surface roughness is investigated in Ni-Ti alloys (Nitinol). Variation in phases with heat treatment temperature is investigated for a Ni-Ti alloy by X-ray diffraction and DSC. Characteristic of the microstructure have been observed by SEM. Surface roughness have been measured by AFM. The results clearly show that significant different in surface property to heat treated at $500^{\circ}C$ (R-phase). $TiO_2$ phases preciritated all of the specimens. It is not good effect of surface roughness because made to surface relief. The surface roughness appears to be important in the property of Ni-Ti alloys for biomedical applications.

• 한국세라믹학회지
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• 제30권8호
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• pp.609-614
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• 1993

Semiconducting Zn-Ti-Ni-O and Zn-Ti-O system were investigated. The specimens sintered at the temperature between 125$0^{\circ}C$ and 145$0^{\circ}C$ exhibited PTCR effect between -5$0^{\circ}C$ and 35$0^{\circ}C$ with resistivity ration exceeding three decades. Semiconducting Zn-Ti-Ni-O is consisted of two phases, one is n-type ZnO and the other is p-type spinel structure. The mechanism of PTCR effect was explained in relation to the piezoelectric property of ZnO and the residual stress caused by thermal expansion difference between two phases during cooling process.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.953-954
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• 2006

Ti-Cu-Ni-Sn quaternary amorphous alloys of $Ti_{50}Cu_{32}Ni_{15}Sn_3$, $Ti_{50}Cu_{25}Ni_{20}Sn_5$, and $Ti_{50}Cu_{23}Ni_{20}Sn_7$ composition were prepared by mechanical alloying in a planetary high-energy ball-mill (AGO-2). The amorphization of all three alloys was found to set in after milling at 300rpm speed for 2h. A complete amorphization was observed for $Ti_{50}Cu_{32}Ni_{15}Sn_3$ and $Ti_{50}Cu_{25}Ni_{20}Sn_5$ after 30h and 20h of milling, respectively. Differential scanning calorimetry analyses revealed that the thermal stability increased in the order of $Ti_{50}Cu_{32}Ni_{15}Sn_3$, $Ti_{50}Cu_{25}Ni_{20}Sn_5$, and $Ti_{50}Cu_{23}Ni_{20}Sn_7$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.266-267
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• 2011

질화갈륨(GaN)은 높은 전자이동도 및 높은 항복전계를 가지며 낮은 온저항으로 인하여 에너지효율이 우수하기 때문에 고출력 전력소자 분야에서 많은 관심을 받고 있다. GaN을 이용한 고출력 전력소자의 경우 상용화 수준에 근접할 만한 기술적 진보가 있었으나, 페르미 레벨 고정(Fermi-level pinning) 현상, 소자의 누설전류 등 아직 해결되어야 할 문제를 갖고 있다. 본 연구에서는 실리콘 기판 위에 성장된 GaN 에피탁시를 활용한 고출력 전력소자의 누설전류를 억제시키기 위해 오믹 접합 중 Au의 상호확산을 억제하는 중간층 금속(Mo or Ni)을 변화시켰으며 오믹 열처리 온도에 따른 특성을 비교 연구하였다. $Cl_2$와 $BCl_3$를 이용하여 0.6 ${\mu}m$ 깊이의 메사 구조가 활성영역을 형성하였고, Si 도핑된 n-GaN 위에 Ti/Al/Mo/Au (20/100/25/200 nm) 와 Ti/Al/Ni/Au (20/100/25/200 nm) 오믹 접합을 각각 설계, 제작하였다. 오믹 열처리시의 GaN 표면오염을 방지하기 위해 $SiO_2$ 희생층을 증착하였다. 오믹 접합 형성을 위해 각 750$^{\circ}C$, 800$^{\circ}C$, 850$^{\circ}C$에서 30초간 열처리를 진행 하였으며, 이후 6 : 1 BOE 용액으로 $SiO_2$ 희생층을 제거하였다. 750, 800, 850$^{\circ}C$에서 Ti/Al/Mo/Au 구조의 오믹 접합 저항은 각 2.56, 2.34, 2.22 ${\Omega}$-mm 이었으며, Ti/Al/Ni/Au 구조의 오믹 접합 저항은 각 43.72, 2.64, 1.86 ${\Omega}$-mm이었다. Isolation 누설전류를 측정하기 위해서 두 개의 오믹 접합 사이에 메사 구조가 있는 테스트 구조를 제안하였다. Isolation 누설전류는 Ti/Al/Mo/Au 구조에서 두 오믹 접합 사이의 거리가 25 ${\mu}m$이고 100 V일 때 750, 800, 850 $^{\circ}C$의 열처리 온도에서 각 1.25 nA/${\mu}m$, 2.48 nA/${\mu}m$, 8.76 nA/${\mu}m$이었으며, Ti/Al/Ni/Au 구조에서는 각 1.58 nA/${\mu}m$, 2.13 nA/${\mu}m$, 96.36 nA/${\mu}m$이었다. 열처리 온도가 증가하며 오믹 접합 저항은 감소하였으나 isolation 누설전류는 증가하였다. 750$^{\circ}C$ 열처리에서 오믹 접합 저항은Ti/Al/Mo/Au 구조가 Ti/Al/Ni/Au 구조보다 약 17배 우수하였고, 850$^{\circ}C$ 고온의 열처리 경우 Ti/Al/Mo/Au 구조의 isolation 누설전류는 8.76 nA/${\mu}m$로 Ti/Al/Ni/Au의 누설전류 96.36 nA/${\mu}m$보다 약 11배 우수하였다. Ti/Al/Mo/Au가 Ti/Al/Ni/Au 보다 오믹 접합 저항과 isolation 누설전류 측면에서 전력용 GaN 소자에 적합함을 확인하였다.

• 대한치과기공학회지
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• 제23권1호
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• pp.9-19
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• 2001

Microstructure and phase transformation of Ti-Ni-Cu alloy powders produced by using attrition milling method were studied. Mixed powders of Ti-(50-X)Ni-XCu ($X=0{\sim}20$ at%) in composition range were mechanically alloyed for maximum 20 hours by using SUS 1/4" ball in argon atmosphere. Ball to powder ratio was 50: 1 and impeller speed was 350rpm. Mechanically alloyed with attrition millimg method. powder was heat treated at the temperature up to $850^{\circ}C$ for 1 hour in the $10^{-6}$ torr vacuum. Ti-Ni-Cu alloy powders have been fabricated by attrition milling method. and then phase transformation behaviours and microstructual properties of the alloy powders were investigated to assist in improving the the high damping capacity of Ti-Ni-Cu shape memory alloy powders. The results obtained are as follows: 1. After heat treating of fully mechanically alloyed powder at $850^{\circ}C$ for 1hour. most of the B2 and B 19' phases was formed and $TiNi_3$ were coexisted. 2. The B 19' martensite were formed in Ti-Ni-Cu alloy powders whose Cu-content is less than 5a/o. where as the B19 martensite in those whose Cu-content is more than 10at%. 3. The powders of as-milled Ti-Ni-Cu alloys whose Cu-contents is less than 5at% are amorphous. whereas those of as-milled Ti-Ni-Cu alloys whose Cu-content is more than 10at% are crystalline. This means that Cu addition tends to suppress amorphization of Ti-Ni alloy powders.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 1996년도 추계학술강연 및 발표대회 강연 및 발표논문 초록집
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• pp.11-11
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• 1996

• 한국재료학회지
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• 제12권10호
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• pp.825-830
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• 2002

The growth rate of solid grains in TiC-XC-2vol% and TiC-XC-30vo1% Ni cermets, where X=Zr, W or Mo, was fitted to an equation of the form $d^3$-$do^3$=Kt. The grain growth behavior during liquid phase sintering at 1673K decreased markedly with addition of $Mo_2$C or WC and increased with addition of ZrC. The contiguity ratio was greater in the alloys with smaller growth rate constant and decreased with increasing Ni content in the $TiC-Mo_2$C-Ni cermet. The grain growth mechanism could be explained by the effect of contiguous grain boundaries in restricting the overall grain growth.

• E2M - 전기 전자와 첨단 소재
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• 제8권5호
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• pp.594-600
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• 1995

Dielectric properties at microwave frequencies of ($Zr_{0.65}$, $Sn_{0.35}$) $Ti_{1.04}$ $O_{4.04}$ ceramics with additives, NiO as an agent to improve dielectric properties and $B_{2}$ $O_{3}$ as a firing agent were investigated. When 0.5 - 1.5 wt% of NiO is add, the grain growth is inhibited and the shape of the grain is uniformed, Dielectric constant(Fr) and bulk density are increased with raising amount of NiO at sintering temperature of 1330 - 1360.deg. C, but the temperature coefficient of resonant frquency(.epsilon.$_{r}$) decreased gradually as the NiO content increased. The value of Qx $f_{o}$ was increased as the amount of NiO was increased in the range of 0.5 to 1.0 wt% and the Qx $f_{o}$, was decreased slightly with raising sintering temperature. With NiO of 1.0 wt% and at sintering temperature of 1360.deg. C, this ceramics was found to have excellent microwave properties of .epsilon.$_{r}$=37.8, Qx $f_{o}$ = 48.600 and .tau.$_{f}$ = 7 ppm/.deg. C.C.. C.. C.C.. C.. C.