• Journal of the Korean Society for Heat Treatment
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• v.21 no.1
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• pp.26-32
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• 2008

Effects of annealing treatment on microstructure and mechanical property of co-sputtered TiNi thin films were studied. As-deposited films showed amorphous state. However, above annealing temperature of $500^{\circ}C$ martensite phase (B19'), precipitate phase ($Ti_2Ni$) and a small amount of parent phase ($B_2$) were present, and phase transformation behaviors were three multi-step phase transformations $B19^{\prime}{\rightarrow}B_2$ and $B_2{\rightarrow}R-phase$ and $R-phase{\rightarrow}B19^{\prime}$. Increase of martensite transformation temperature, increase of microhardness and Young's modulus of TiNi films annealed above $500^{\circ}C$ were discussed in terms of precipitate phase.

• Journal of Powder Materials
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• v.15 no.6
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• pp.503-508
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• 2008

Ti(C,N) solid solutions in hot-pressed Ti($C_{x}N_{1-x}$) (x=0.0, 0.3, 0.5, 0.7, 1.0) and 40TiC-40TiN-20Ni (in wt.%) cermet were characterized in this study. For hot-pressed Ti(C,N)s, the lattice parameters and hardness values of Ti(C,N) were determined by using XRD (X-Ray Diffraction) and nanoindentation. The properties of hot-pressed Ti(C,N) samples changed linearly with their carbon or nitrogen contents. For the TiC-TiN-Ni cermet, the hardness of the hard phase and binder phase were determined by nanoindentation in conjunction with microstructural observation. The measured hardness values were ${\sim}8.7$ GPa for the binder phase and ${\sim}28.7$ GPa for the hard phase, which was close to the hardness of hot-pressed Ti($C_{0.7}N_{0.3}$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.208-209
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• 2008

Ni/Ti/Al multilayer system was tested for low-resistance ohmic contact formation to Al-implanted p-type 4H-SiC. Compared with conventional process using Ni, Ni/Ti/Al contact shows perfect ohmic behavior, and possesses much lower contact resistance of about $2.5\times10^{-4}\Omega{\cdot}cm^2$ after $930^{\circ}C$ RTA, which is about 2 orders of magnitude smaller than that of Ni contact. Contact resistance gradually increased as the RTA temperature was lowered in the range of 840 ~ $930^{\circ}C$, and about $3.4\times10^{-4}\Omega{\cdot}cm^2$ was obtained at the lowest RTA temperature of $840^{\circ}C$. Therefore, it was shown that RTA temperature for ohmic contact formation can be lowered to at least $840^{\circ}C$ without significant compromise of contact resistance.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2002.11a
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• pp.30-31
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• 2002

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.627-628
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• 2006

The present work is a study on the argon gas pressure effects of Sinter/HIP sintering on microstructure and strength of different grades of TiC-NiMo cermets. Titanium carbide in the composition of different grades of TiC-NiMo cermets was ranged from 40 to 80 wt.% and the ratio of nickel to molybdenum in the initial powder composition was 1:1, 2:1 and 4:1 respectively. On the sintered alloys, the main strength characteristic, transverse rupture strength (TRS) was measured. Furthermore, the microstructure parameters of some alloys were measured and the pressure effect on pore elimination was evaluated. All the results were compared with common, vacuum sintered alloys. The TRS values of TiC-NiMo cermets could be considerably improved by using Sinter/HIP technique, for high-carbide fraction alloys and for alloys sintered at elevated temperatures.

• Korean Journal of Materials Research
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• v.13 no.7
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• pp.460-464
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• 2003

Ni and Ti films were deposited by the thermal evaporator, and then annealed in the N$_2$ ambient at 300-80$0^{\circ}C$ in a RTA(rapid thermal annealing) system. Four point probe, AEM, FESEM, AES, and XPS were used to study the effects of Ti-capping layers on the thermal stability of NiSi thin films. The Ti-capped NiSi was stable up to $700^{\circ}C$ for 100 sec. RTA, while the uncapped NiSi layers showed high sheet resistance after $600^{\circ}C$. These results were due to that the Ni in-diffusion and Si out-diffusion were retarded by the capping layer, resulting in the suppression of the formation of NiSi$_2$and Si grains at the surface.

• Journal of Powder Materials
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• v.14 no.3 s.62
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• pp.208-214
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• 2007

The microstructure and hardness of (W,Ti)C cemented carbides with a different metallic binder composition of Ni and Co fabricated by powder technology were investigated. The densifications of the prepared materials were accomplished by using vacuum sintering at $1450^{\circ}C$. Nearly full dense (W,Ti)C cemented carbides were obtained with a relative density of up to 99.7% with 30 wt.% Co and 99.9% with 30 wt.% Ni as a metallic binder. The average grain size of the (W,Ti)C-Co and the (W,Ti)C-Ni was decreased by increasing the metallic binder content. The hardness of the dense (W,Ti)C-15 wt%Co and (W,Ti)C-15 wt%Ni, was greater than that of the other related cemented carbides; in addition, the cobalt-based cemented carbides had greater hardness values than the nickel-based cemented carbides.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.11
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• pp.1149-1155
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• 2004

In this paper, novel methods for improvement of thermal stability of Ni-germano Silicide were proposed for nano CMOS applications. It was shown that there happened agglomeration and abnormal oxidation in case of Ni-germano Silicide using Ni only structure. Therefore, 4 kinds of tri-layer structure, such as, Ti/Ni/TiN, Ni/Ti/TiN, Co/Ni/TiN and Ni/Co/TiN were proposed utilizing Co and Ti interlayer to improve thermal stability of Ni-germano Silicide. Ti/Ni/TiN structure showed the best improvement of thermal stability and suppression of abnormal oxidation although all kinds of structures showed improvement of sheet resistance. That is, Ti/Ni/TiN structure showed only 11 ohm/sq. in spite of 600 $^{\circ}C$, 30 min post silicidation annealing while Ni-only structure show 42 ohm/sq. Therefore, Ti/Ni/TiN structure is highly promising for nano-scale CMOS technology.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2002.11a
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• pp.32-32
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• 2002

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.449-452
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• 1999

NiSi were formed from either Ni monolayer or Ni/Ti bilayer and the SADS method was applied to fabricated PMOSFET with Ni-polycide gate electrodes. PMOSFET made from Ni monolayer showed thermal stability unto 300~40$0^{\circ}C$ for 600sec., and excellent C-V characteristics for long time of drive-in anneal than PMOSFET made from Ni/Ti bilayer. This was attributed to easier decomposition and subsequent Ni diffusion to SiO$_2$ layer, probably due to the presence of Ti unreducing process